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    Diodes Incorporated D5V0X1BA2LPQ-7B

    ESD Protection Diodes / TVS Diodes Dataline Protection PP X1-DFN1006-2 T&R 10K
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics D5V0X1BA2LPQ-7B 11,024
    • 1 $0.44
    • 10 $0.309
    • 100 $0.156
    • 1000 $0.095
    • 10000 $0.066
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    Diodes Incorporated D5V0X1BA2LP-7B

    ESD Protection Diodes / TVS Diodes Ultra-Lo Capacitance Bi-Drirect TVS Diod
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics D5V0X1BA2LP-7B 8,742
    • 1 $0.23
    • 10 $0.154
    • 100 $0.063
    • 1000 $0.058
    • 10000 $0.056
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    Diodes Incorporated D5V0X1BA2LP4Q-7B

    ESD Protection Diodes / TVS Diodes Dataline Protection PP X2-DFN1006-2 T&R 10K
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics D5V0X1BA2LP4Q-7B
    • 1 $0.38
    • 10 $0.266
    • 100 $0.135
    • 1000 $0.082
    • 10000 $0.056
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    ITT Interconnect Solutions CA3106E18-1PBA232

    Circular MIL Spec Connector CAB 10C 10#16 PIN PLUG BLK Zn
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CA3106E18-1PBA232
    • 1 $172.59
    • 10 $159.91
    • 100 $153.02
    • 1000 $153.02
    • 10000 $153.02
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    Honeywell Sensing and Control GKBA2LX

    Keylock Switches Safety/GK Din Key Op
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics GKBA2LX
    • 1 $310.83
    • 10 $267.17
    • 100 $256.22
    • 1000 $256.22
    • 10000 $256.22
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    BA2L Datasheets (12)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    BA2L3M Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    BA2L3M Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BA2L3N Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    BA2L3N Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BA2L3Z Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    BA2L3Z Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BA2L4L Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    BA2L4L Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BA2L4M Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    BA2L4M Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BA2L4Z Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    BA2L4Z Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    BA2L Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    tdc 310

    Abstract: ba6l BA6R 10 35L U1
    Text: HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ 256K x 36 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 4K x 36 banks – 9 megabits of memory on chip


    Original
    200MHz 166MHz 133MHz) 14Gbps SMEN-01-04 BF-208 tdc 310 ba6l BA6R 10 35L U1 PDF

    Untitled

    Abstract: No abstract text available
    Text: HIGH-SPEED 64K x 16 BANK-SWITCH ABLE DU AL-PORTE D SRAM WITH SEMAPHORE CONT ROLS ADVANCED IDT70728S/L FE ATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Eight independent 8K x 16 banks - 1 Megabit ot memory on chip • Fast asynchronous address-to-data access time: 15ns


    OCR Scan
    16-bit IDT70728S/L 100-pin PN100-1) PDF

    ba6l

    Abstract: No abstract text available
    Text: HIGH-SPEED 3.3V 64K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ 64K x 36 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 1K x 36 banks – 2 megabits of memory on chip


    Original
    200MHz 166MHz 133MHz) 14Gbps SMEN-01-05 SMEN-01-04 ba6l PDF

    timing controller SHART

    Abstract: T21N K4U52324Q SAMSUNG GDDR4 K4U52324QE-BC09 GDDR4
    Text: 512M GDDR4 SGRAM K4U52324QE 512Mbit GDDR4 SGRAM 2M x 32Bit x 8 Banks Graphic Double Data Rate 4 Synchronous DRAM with Uni-directional Data Strobe and DLL 136Ball FBGA Revision 1.0 June 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,


    Original
    K4U52324QE 512Mbit 32Bit 136Ball timing controller SHART T21N K4U52324Q SAMSUNG GDDR4 K4U52324QE-BC09 GDDR4 PDF

    10 35L U4

    Abstract: 70V7589 IDT70V7589 IDT70V7589S BA5L
    Text: HIGH-SPEED 3.3V 64K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE PRELIMINARY IDT70V7589S Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ 64K x 36 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 1K x 36 banks


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    IDT70V7589S 166MHz 133MHz) 12Gbps SMEN-01-05 SMEN-01-04 10 35L U4 70V7589 IDT70V7589 IDT70V7589S BA5L PDF

    CE1X

    Abstract: 70V7339 A12L IDT70V7339 IDT70V7339S
    Text: HIGH-SPEED 3.3V 512K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE PRELIMINARY IDT70V7339S Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ 512K x 18 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 8K x 18 banks


    Original
    IDT70V7339S 166MHz 133MHz) 12Gbps SMEN-01-05 CE1X 70V7339 A12L IDT70V7339 IDT70V7339S PDF

    truth table of 4081

    Abstract: 4KX16
    Text: HIGH-SPEED 3.3V 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH SEMAPHORE CONTROLS Integrated Device Technology, Inc. ADVANCED IDT70V727S/L FEATURES: DESCRIPTION: • 32K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Eight independent 4K x 16 banks - 512 Kilobit of memory on chip


    Original
    IDT70V727S/L IDT70V727 100-pin PN100-1) 70V727 512Kbit truth table of 4081 4KX16 PDF

    70V7519

    Abstract: IDT70V7519 IDT70V7519S ba6l
    Text: Š HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ 256K x 36 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 4K x 36 banks – 9 megabits of memory on chip


    Original
    200MHz 166MHz 133MHz) 14Gbps BC-256 70V7519 IDT70V7519 IDT70V7519S ba6l PDF

    A12L

    Abstract: No abstract text available
    Text: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH SEMAPHORE CONTROLS Integrated Device Technology, Inc. ADVANCED IDT70V728S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Eight independent 8K x 16 banks - 1 Megabit of memory on chip


    Original
    IDT70V728S/L IDT70V728 100-pin PN100-1) 70V728 A12L PDF

    micro servo 9g

    Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
    Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call


    Original
    V20HL, V25HS, V30HL, V30MX, V35HS, V40HL, V50HL, V55PI, X10679EJDV0SG00 micro servo 9g uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518 PDF

    2sk2500

    Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original
    C11178JJCV0IF0012 C11178JJCV0IF MIL-HDBK-217 MILMIL10100 MIL-HDBK-217Fit 2sk2500 UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Š HIGH-SPEED 3.3V 128K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ 128K x 36 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 2K x 36 banks – 4 megabits of memory on chip


    Original
    IDT70V7599S 200MHz 166MHz 133MHz) 14Gbps BC-256 PDF

    Untitled

    Abstract: No abstract text available
    Text: HIGH-SPEED 3.3V 512K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE PRELIMINARY IDT70V7339S Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ 512K x 18 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 8K x 18 banks


    Original
    IDT70V7339S 166MHz 133MHz) 12Gbps PDF

    A101L

    Abstract: No abstract text available
    Text: HIGH-SPEED 3.3V 128K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE PRELIMINARY IDT70V7399S Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ 128K x 18 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 2K x 18 banks


    Original
    IDT70V7399S 166MHz 133MHz) 12Gbps A101L PDF

    70V7519

    Abstract: IDT70V7519 IDT70V7519S
    Text: HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ 256K x 36 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 4K x 36 banks – 9 megabits of memory on chip


    Original
    200MHz 166MHz 133MHz) 14Gbps BC-256 70V7519 IDT70V7519 IDT70V7519S PDF

    BA5L

    Abstract: 70V7339 A12L IDT70V7339 IDT70V7339S
    Text: HIGH-SPEED 3.3V 512K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ 512K x 18 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 8K x 18 banks – 9 megabits of memory on chip


    Original
    200MHz 166MHz 133MHz) 14Gbps BC-256 BA5L 70V7339 A12L IDT70V7339 IDT70V7339S PDF

    95A 640

    Abstract: 70V7319 IDT70V7319 IDT70V7319S 7319S
    Text: HIGH-SPEED 3.3V 256K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE IDT70V7319S Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ 256K x 18 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 4K x 18 banks – 4 megabits of memory on chip


    Original
    IDT70V7319S 200MHz 166MHz 133MHz) 14Gbps SMEN-01-05 95A 640 70V7319 IDT70V7319 IDT70V7319S 7319S PDF

    MICROPROCESSOR Z80

    Abstract: uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro
    Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call


    Original
    Z80TM V20TM, V20HLTM, V25TM, V25HSTM, V30TM, V30HLTM, V33TM, V33ATM, V35TM, MICROPROCESSOR Z80 uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro PDF

    70V7599

    Abstract: IDT70V7599 IDT70V7599S
    Text: Š HIGH-SPEED 3.3V 128K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ 128K x 36 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 2K x 36 banks – 4 megabits of memory on chip


    Original
    200MHz 166MHz 133MHz) 14Gbps out14 BC-256 70V7599 IDT70V7599 IDT70V7599S PDF

    70V7339

    Abstract: A12L IDT70V7339 IDT70V7339S
    Text: Š HIGH-SPEED 3.3V 512K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ 512K x 18 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 8K x 18 banks – 9 megabits of memory on chip


    Original
    200MHz 166MHz 133MHz) 14Gbps BC-256 70V7339 A12L IDT70V7339 IDT70V7339S PDF

    6AS7

    Abstract: 3EM3 ST CHN s5
    Text: HIGH-SPEED 3.3V 32K x 16 BANK-SWITCH ABLE DU AL-PORTE D SRAM WITH SEMAPHORE CONT ROLS ADVANCED IDT70V727S/L FE ATURES: DESCRIPTION: • 32K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Eight independent 4K x 16 banks - 512 Kilobit ot memory on chip


    OCR Scan
    16-bit IDT70V727S/L 100-pin PN100-1) 70V727 512Kbit 6AS7 3EM3 ST CHN s5 PDF

    CMOS 4081

    Abstract: No abstract text available
    Text: Integrated Device Technology, Inc. HIGH-SPEED 3.3V 64K x 16 BAN K-SWITCHABLE DUAL-PORTED SRAM WITH SEMAPHORE CONTROLS ADVANCED IDT70V727S/L DESCRIPTION: FEATURES: • 32K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Eight independent 4K x 16 banks


    OCR Scan
    IDT70V727S/L IDT70V727 B5771 IDT70V727S/L 100-pin PN100-1) 70V727 512Kbit CMOS 4081 PDF

    70V7319

    Abstract: IDT70V7319 IDT70V7319S
    Text: Š HIGH-SPEED 3.3V 256K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE IDT70V7319S Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ 256K x 18 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 4K x 18 banks


    Original
    IDT70V7319S 200MHz 166MHz 133MHz) 14Gbps BC-256 144-pin 70V7319 IDT70V7319 IDT70V7319S PDF

    ba6r

    Abstract: ba6l 10 35L U4 95A 640 70V7599 IDT70V7599 IDT70V7599S BF208 2Kx36 page counter
    Text: HIGH-SPEED 3.3V 128K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ 128K x 36 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 2K x 36 banks – 4 megabits of memory on chip


    Original
    200MHz 166MHz 133MHz) 14Gbps SMEN-01-05 SMEN-01-04 ba6r ba6l 10 35L U4 95A 640 70V7599 IDT70V7599 IDT70V7599S BF208 2Kx36 page counter PDF