BA5 marking
Abstract: SBA-5089 marking ba5 BA5 Amplifier class d rf power amplifier
Text: SBA-5089 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBA-5089 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with
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SBA-5089
SBA-5089
1950MHz
EDS-102743
BA5 marking
marking ba5
BA5 Amplifier
class d rf power amplifier
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SBA-5089
Abstract: No abstract text available
Text: SBA-5089 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices SBA-5089 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with
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SBA-5089
SBA-5089
EDS-102743
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BA5 Amplifier
Abstract: GSM/BA5 Amplifier marking ba5 class d rf power amplifier
Text: Advanced Data Sheet SBA-5089 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBA-5089 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process
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SBA-5089
SBA-5089
EDS-102743
BA5 Amplifier
GSM/BA5 Amplifier
marking ba5
class d rf power amplifier
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Untitled
Abstract: No abstract text available
Text: SBA-5089 Z SBA-5089(Z) DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER RoHS Compliant and Pb-Free Product (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SBA-5089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal
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SBA-5089
OT-89
areA-5089
SBA5089â
SBA5089Zâ
SBA-5089Z
SBA-5089
EDS-102743
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BA5Z
Abstract: BA5 marking marking ba5 sba5089 SBA-5089 sba-5089z MMIC "SOT89" marking CODE h marking sba marking code ba5
Text: SBA-5089 Z SBA-5089(Z) DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBA-5089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal
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SBA-5089
OT-89
Matching5570
SBA5089"
SBA5089Z"
SBA-5089Z
SBA-5089
BA5Z
BA5 marking
marking ba5
sba5089
sba-5089z
MMIC "SOT89" marking CODE h
marking sba
marking code ba5
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BA5Z
Abstract: BA5 marking marking ba5 BA5 Amplifier SBA-5089 GSM/BA5 Amplifier
Text: SBA-5089 Product Description SBA-5089Z Sirenza Microdevices’ SBA-5089 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with excellent
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SBA-5089
SBA-5089Z
SBA-5089
EDS-102743
BA5Z
BA5 marking
marking ba5
BA5 Amplifier
GSM/BA5 Amplifier
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SBA-5086
Abstract: BA5 Amplifier BA5 marking mmic marking L SIRENZA MARKING
Text: SBA-5086 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices SBA-5086 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with
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SBA-5086
SBA-5086
1950MHz
EDS-102742
BA5 Amplifier
BA5 marking
mmic marking L
SIRENZA MARKING
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BA5 Amplifier
Abstract: BA5 marking SBA-5086
Text: Preliminary Data Sheet SBA-5086 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBA-5086 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process
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SBA-5086
SBA-5086
EDS-102742
BA5 Amplifier
BA5 marking
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BA5 Amplifier
Abstract: BA512 SBA-5086 BA5 marking
Text: SBA-5086 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBA-5086 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with
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SBA-5086
SBA-5086
EDS-102742
BA5 Amplifier
BA512
BA5 marking
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BA5 marking
Abstract: sba-5086z SBA-5086 sba5086z RW mmic
Text: SBA-5086 SBA-5086Z Product Description Sirenza Microdevices’ SBA-5086 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with excellent
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SBA-5086
SBA-5086Z
SBA-5086
EDS-102742
BA5 marking
sba-5086z
sba5086z
RW mmic
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ch340s
Abstract: MARKING JW SOT-23 marking 3U 3T 3C diode 3E 3G BAT54BDWD1PT BA5 marking BA6 marking transistor marking lv4 ch740h40 kl3 59 MF sot-23
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Maximum Maximum Maximum Maximum Reverse Peak Average Forward Peak Current Reverse Rectified Surge Current Marking @ 25°C TA Voltage Current @ 1S IO IFM Surge IR
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CH025S-40PT
CH43H-30PT
CH035H-20PT
CH035H-30PT
CH035H-40PT
CH015H-40PT
CH015H-50PT
CH015H-60PT
CH157H-70PT
BAT43BPT
ch340s
MARKING JW SOT-23
marking 3U 3T 3C diode 3E 3G
BAT54BDWD1PT
BA5 marking
BA6 marking
transistor marking lv4
ch740h40
kl3 59
MF sot-23
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MT49H16M18C
Abstract: No abstract text available
Text: 16 Meg x 18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features 288Mb SIO Reduced Latency RLDRAM II MT49H16M18C For the latest data sheet, refer to Micron’s Web site: www.micron.com/rldram Features Figure 1: • 400 MHz DDR operation (800 Mb/s/pin data rate)
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288Mb
MT49H16M18C
09005aef80a41b59/Source:
09005aef811ba111
MT49H8M18C
MT49H16M18C
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15READ
Abstract: marking ba5 MT49H8M18C MT49H16M18C
Text: 288Mb: 16 Meg x 18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features 288Mb SIO Reduced Latency RLDRAM II MT49H16M18C For the latest data sheet, refer to Micron’s Web site: www.micron.com/rldram Features Figure 1: • 400 MHz DDR operation (800 Mb/s/pin data rate)
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288Mb
MT49H16M18C
09005aef80a41b59/Source:
09005aef811ba111
MT49H8M18C
15READ
marking ba5
MT49H16M18C
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smd dk qk
Abstract: SMD MARKING CODE ACY smd marking codes BA5 smd marking codes BA2 RLDRAM MT49H16M18C
Text: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O
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288Mb
288Mb
clo68-3900
MT49H16M18C
smd dk qk
SMD MARKING CODE ACY
smd marking codes BA5
smd marking codes BA2
RLDRAM
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MT49H16M18C
Abstract: No abstract text available
Text: 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization • 16 Meg x 18, 32 Meg x 9 Separate I/O
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288Mb
288Mb
09005aef80a41b59/zip:
09005aef811ba111
MT49H8M18C
MT49H16M18C
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smd marking codes BA5
Abstract: MT49H16M18C
Text: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O
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288Mb
288Mb
MT49H16M18C
smd marking codes BA5
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MT49H16M18C
Abstract: No abstract text available
Text: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball µBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O
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288Mb
288Mb
clo68-3900
MT49H16M18C
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BA5 marking
Abstract: BA7 marking plastic BA5 marking code A53 SMD Marking Code ba7 transistor SMD MARKING CODE ACY MT49H16M18C smd cod RLDRAM A22 SMD MARKING CODE
Text: 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization • 16 Meg x 18, 32 Meg x 9 Separate I/O
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288Mb
MT49H16M18C
MT49H32M9C
144-Ball
288Mb
09005aef80a41b59/zip:
09005aef811ba111
MT49H8M18C
BA5 marking
BA7 marking
plastic BA5 marking code
A53 SMD Marking Code
ba7 transistor
SMD MARKING CODE ACY
MT49H16M18C
smd cod
RLDRAM
A22 SMD MARKING CODE
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SMD d1c
Abstract: SMD MARKING CODE ACY qkx capacitor smd codes marking A21 MT49H16M18C
Text: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O
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288Mb
288Mb
clo68-3900
MT49H16M18C
SMD d1c
SMD MARKING CODE ACY
qkx capacitor
smd codes marking A21
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samsung lcd tv circuits diagrams
Abstract: LTM150XH-T01 BA5 marking samsung lcd tv power supply diagrams diagram samsung LCD TV circuits diagram samsung LCD TV power circuits samsung "lcd tv" pixel circuits diagram 02VS 2SK1059 2SK1399
Text: Approval TO : DATE : SAMSUNG SAMSUNGTFT-LCD TFT-LCD MODEL MODEL NO. NO. : LTM150XH-T01 LTM150XH-T01 APPROVED BY : Any Modification of Spec is not allowed without SEC’s permission. Approved by : PREPARED BY : AMLCD Technical Customer Service Team SAMSUNG ELECTRONICS CO., LTD.
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LTM150XH-T01
samsung lcd tv circuits diagrams
LTM150XH-T01
BA5 marking
samsung lcd tv power supply diagrams
diagram samsung LCD TV circuits
diagram samsung LCD TV power circuits
samsung "lcd tv" pixel circuits diagram
02VS
2SK1059
2SK1399
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BA5 marking
Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99
Text: HANBit HMD4M144D9WG 64Mbyte 4Mx144 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package
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HMD4M144D9WG
64Mbyte
4Mx144)
200-pin
HMD4M144D9WG
144bit
4Mx16bit
50-pin
16bit
BA5 marking
DQ112-127
BA7 marking
DQ113
BA6 marking
BA6137
DQ99
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BZX84C75
Abstract: BZX84C4V3ET1 marking bb8 marking code bb6
Text: BZX84C2V4ET1 Series Zener Voltage Regulators 225 mW SOT−23 Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well
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BZX84C2V4ET1
OT-23
BZX84C2V4ET1/D
BZX84C75
BZX84C4V3ET1
marking bb8
marking code bb6
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Untitled
Abstract: No abstract text available
Text: f\- o KOA 5- a ; - o 7 TANTALUM CHIP CAPACITOR TMC SPEER ELECTRONICS, INC. TANTALUM CHIP CAPACITOR • Epoxy Molded Body, UL94V-0 Flammability • EIA - US and EIA - Japan Compatible Sizes • 100% Burn-in and End-of-Line Testing • Extended Values Per Case Size
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OCR Scan
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UL94V-0
P/2012
B/3528
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PDF
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Untitled
Abstract: No abstract text available
Text: PD-9.1006 In tern atio n al k ?r R e c tifie r IRF644S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Description
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IRF644S
SMD-220
SMD-220
D-6380
DD51453
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