Untitled
Abstract: No abstract text available
Text: Product specification BA779;BA779S SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Wide frequency range 10 MHz to 1 GHz 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter
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BA779
BA779S
OT-23
BA799
BA799S
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BA779
Abstract: BA779S
Text: BA779.BA779S Vishay Telefunken RF PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Order Instruction Type Type Differentiation VR = 30 V, Zr = 5kΩ VR = 30 V, Zr = 9kΩ
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BA779
BA779S
BA779
BA779S
13-Feb-01
D-74025
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BA779
Abstract: BA779-GS08 BA779-GS18 BA779S BA779S-GS08 BA779S-GS18
Text: BA779 / BA779S VISHAY Vishay Semiconductors RF PIN Diodes - Single in SOT-23 Features 3 • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 1 2 16923 Mechanical Data Case: SOT-23 Plastic case Weight: approx. 8.1 mg
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BA779
BA779S
OT-23
OT-23
BA779
BA779-GS18
BA779-GS08
BA779S-GS18
BA779S-GS08
BA779-GS08
BA779S
BA779S-GS08
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BA779
Abstract: BA779S
Text: BA779.BA779S Vishay Telefunken Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current Junction temperature
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BA779
BA779S
50mmx50mmx1
D-74025
01-Apr-99
BA779S
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BA779
Abstract: BA779-GS08 BA779-GS18 BA779S BA779S-GS08 BA779S-GS18
Text: BA779 / BA779S Vishay Semiconductors RF PIN Diodes - Single in SOT-23 Features • Wide frequency range 10 MHz to 1 GHz • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 e3 1 2 16923 Applications Current controlled HF resistance in adjustable
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BA779
BA779S
OT-23
2002/95/EC
2002/96/EC
OT-23
BA779
BA779-GS18
BA779-GS08
BA779-GS08
BA779S
BA779S-GS08
BA779S-GS18
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BA779
Abstract: BA779-GS08 BA779-GS18 BA779S BA779S-GS08 BA779S-GS18
Text: BA779/BA779S Vishay Semiconductors RF PIN Diodes - Single in SOT23 Features • Wide frequency range 10 MHz to 1 GHz • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 e3 1 2 16923 Applications • Current controlled HF resistance in adjustable
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BA779/BA779S
2002/95/EC
2002/96/EC
GS18/10
GS08/3
BA779
BA779-GS18
BA779-GS08
BA779S
BA779S-GS18
BA779
BA779-GS08
BA779S
BA779S-GS08
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BA779
Abstract: BA779S
Text: BA779.BA779S TELEFUNKEN Semiconductors Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current
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PDF
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BA779
BA779S
50mmx50mmx1
D-74025
BA779S
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Untitled
Abstract: No abstract text available
Text: BA779.BA779S Vishay Telefunken RF PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Order Instruction Type Type Differentiation VR = 30 V, Zr = 5kΩ VR = 30 V, Zr = 9kΩ
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BA779
BA779S
BA779
BA779â
BA779Sâ
13-Feb-01
D-74025
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Untitled
Abstract: No abstract text available
Text: BA779/BA779S VISHAY Vishay Semiconductors RF PIN Diodes Features 3 • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 1 2 16923 Mechanical Data Case: SOT-23 Plastic Package Weight: approx. 8 mg
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BA779/BA779S
OT-23
BA779
BA779S
BA779-GS18
BA779-GS08
BA779S-GS18
BA779S-GS08
D-74025
24-Feb-04
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BA779
Abstract: BA779S
Text: BA779.BA779S Vishay Semiconductors RF PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Order Instruction Type Type Differentiation VR = 30 V, Zr = 5kΩ VR = 30 V, Zr = 9kΩ
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BA779
BA779S
BA779
BA779S
13-Feb-01
D-74025
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8550 sot-23
Abstract: BA779 BA779S
Text: BA779.BA779S Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current Junction temperature
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BA779
BA779S
50mmx50mmx1
D-74025
12-Dec-94
8550 sot-23
BA779S
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Untitled
Abstract: No abstract text available
Text: BA779 / BA779S Vishay Semiconductors RF PIN Diodes - Single in SOT-23 Features • Wide frequency range 10 MHz to 1 GHz • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 e3 1 2 16923 Applications Current controlled HF resistance in adjustable
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BA779
BA779S
OT-23
2002/95/EC
2002/96/EC
OT-23
BA779S
BA779-GS18
BA779-GS08
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zr smd
Abstract: transistor smd ZR BA779 BA779S BA799 0/transistor smd ZR 55
Text: Diodes SMD Type Silicon PIN Diodes BA779;BA779S SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Wide frequency range 10 MHz to 1 GHz 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base
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BA779
BA779S
OT-23
BA799
BA799S
zr smd
transistor smd ZR
BA779S
BA799
0/transistor smd ZR 55
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BA779-GS08
Abstract: BA779 BA779-GS18 BA779S BA779S-GS08 BA779S-GS18
Text: BA779/BA779S Vishay Semiconductors RF PIN Diodes - Single in SOT23 Features • Wide frequency range 10 MHz to 1 GHz • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 e3 1 2 16923 Applications • Current controlled HF resistance in adjustable
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BA779/BA779S
2002/95/EC
2002/96/EC
GS18/10
GS08/3
BA779
BA779-GS18
BA779-GS08
BA779S
BA779S-GS18
BA779-GS08
BA779
BA779S
BA779S-GS08
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5d surface mount diode
Abstract: JS29 bas16 cross reference DL4148 DL4148 package MMBD1702 RFE International BAS21 DL4448 LL4148
Text: SURFACE MOUNT: Switching Diodes MELF & SOT-23 SURFACE MOUNT SWITCHING DIODE RFE CrossPower Peak Max.Average Part Number Reference Dissipation Voltage Rect. Current Forward Voltage Pd mW VZM(V) IO(mA) VF(V)@IF(mA) Maximum Rev. Current Max. Reverse Package
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OT-23
LL4148
DL4148
500mW
DL4448
LL4448
OT-23
C3B01
5d surface mount diode
JS29
bas16 cross reference
DL4148
DL4148 package
MMBD1702
RFE International
BAS21
DL4448
LL4148
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XM0830SJ
Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24GHz
BF517
BF770A
BF771
BF775
BF799
BF799W
BFP181
BFP181R
BFP182
XM0830SJ
smd code marking 162 sot23-5
MARKING V14 SOT23-5
RF Transistor Selection
smd code marking rf ft sot23
smd code marking NEC rf transistor
sot-363 inf
smd marking D3 SOT363
XM0860SH
MGA51563
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LL4148 melf
Abstract: DIODE SOT-23 PACKAGE JS29 bas16 cross reference DL4148 BAS21 DL4448 LL4148 LL4448 MMBD1402
Text: SURFACE MOUNT: Switching Diodes MELF & SOT-23 SURFACE MOUNT SWITCHING DIODE RFE CrossPower Peak Max.Average Part Number Reference Dissipation Voltage Rect. Current Forward Voltage Pd mW VZM(V) IO(mA) VF(V)@IF(mA) Maximum Rev. Current Max. Reverse Package
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OT-23
LL4148
DL4148
500mW
DL4448
LL4448
OT-23
C3B01
LL4148 melf
DIODE SOT-23 PACKAGE
JS29
bas16 cross reference
DL4148
BAS21
DL4448
LL4148
LL4448
MMBD1402
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BGT24MTR11
Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24GHz
BF517
BF770A
BF771
BF799
BF799W
BFP181
BFP182
BFP182R
BFP182W
BGT24MTR11
AZ1045-04F
BAR86-02LRH
24GHz Radar
BGA628L7
SMV1705
BFR181W
ALPHA&OMEGA DATE CODE
marking code onsemi Diode
2SC4586
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1N4148.1N4448
Abstract: BYV37-BYV38 byg20
Text: Temic Semiconductors Selector Guide - Alphanumeric Index 1N4148.1N4448 1N4150 1N4151 1N4154 1N4728A.1N4761A 1N5221B.1N5267B 1N5417.1N5418 BA1282.BA1283 BA282.BA283 BA479G.BA479S BA604 BA679.BA679S BA682.BA683 BA779.BA779S BA779 - 2 BA979.BA979S BA982.BA983
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1N4148
1N4448
1N4150
1N4151
1N4154
1N4728A.
1N4761A
1N5221B.
1N5267B
1N5417
1N4148.1N4448
BYV37-BYV38
byg20
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Untitled
Abstract: No abstract text available
Text: BA779.BA779S V ï|P A f Vishay Telefu nken ▼ Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled attenuators HF resistance In adjustable Absolute Maximum Ratings Tj = 25°C Parameter Reverse voltage Forward current
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OCR Scan
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PDF
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BA779
BA779S
50mmx50mmx1
D-74025
24-Jun-98
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Untitled
Abstract: No abstract text available
Text: BA779.BA779S_ v is h a y Vishay Telefunken Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators Absolute Maximum Ratings Tj = 25°C Parameter
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OCR Scan
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PDF
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BA779
BA779S_
50mmx50mmx1
01-Apr-99
BA779S
OT-23
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Untitled
Abstract: No abstract text available
Text: Temic BA779.BA779S S e m i c o n d u c t o r s Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators Absolute Maximum Ratings Tj = 25°C Test Conditions Parameter Reverse voltage
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OCR Scan
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PDF
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BA779
BA779S
50mmx50mmxl
12-Dec-94
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Untitled
Abstract: No abstract text available
Text: Te m ic BA779.BA779S TELEFUNKEN Semiconductors Silicon PIN Diodes Features • W ide freq u en cy range 10 M H z to 1 G H z Applications Current co n tr o lled H F resistan ce in adjustable attenuators Absolute Maximum Ratings Tj = 2 5 ° C T e st C o n d itio n s
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BA779
BA779S
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CQ 734 G
Abstract: No abstract text available
Text: BA779.BA779S VtSHAY ▼ Vishay Telefunken Silicon PIN Diodes Features • W id e fre q u e n c y ra n g e 10 M H z to 1 G H z Applications C u rre n t c o n tro lle d a tte n u a to rs HF re s is ta n c e In a d ju s ta b le Absolute Maximum Ratings Tj = 2 5 ° C
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OCR Scan
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BA779
BA779S
D-74025
01-Apr-99
CQ 734 G
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