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    BALL DIODE Search Results

    BALL DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    BALL DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    1310nm DFB BH LASER

    Abstract: InGaAsP lens TO STM-16 LD SOURCE Aspheric Lens to56 ball Transmitter Optical Sub Assembly 1310nm FP Laser TOSA Monitor PD Capacitance 1 pF
    Text: 1310nm InGaAsP strained MQW for FP-LD Ø1.5mm ball lens TO CAN KLT-131451S Rev. 006 Description KLT-131451x is long wavelength Fabry-Perot LD source in TO-56 package with ball lens cap. KLT-131451x consists of an InGaAsP strained multi-quantum well MQW laser diode(LD) and an InGaAs


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    1310nm KLT-131451S KLT-131451x 25Gbps. 1310nm DFB BH LASER InGaAsP lens TO STM-16 LD SOURCE Aspheric Lens to56 ball Transmitter Optical Sub Assembly 1310nm FP Laser TOSA Monitor PD Capacitance 1 pF PDF

    lens TO

    Abstract: 1310nm DFB BH LASER InGaAsP to56 ball laser DFB 1310nm 10mW STM-16 ball lens Aspheric Lens TO56 package Transmitter Optical Sub Assembly 1310nm FP Laser TOSA Monitor PD Capacitance 1 pF
    Text: 1310nm InGaAsP strained MQW for FP-LD Ø2mm ball lens TO CAN KLT-131452x Rev.006 Description KLT-131452x is long wavelength Fabry-Perot LD source in TO-56 package with ball lens cap. KLT-131452x consists of an InGaAsP strained multi-quantum well MQW laser diode(LD) and an InGaAs


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    1310nm KLT-131452x KLT-131452x 25Gbps. lens TO 1310nm DFB BH LASER InGaAsP to56 ball laser DFB 1310nm 10mW STM-16 ball lens Aspheric Lens TO56 package Transmitter Optical Sub Assembly 1310nm FP Laser TOSA Monitor PD Capacitance 1 pF PDF

    lens TO

    Abstract: STM-16 tosa 5mw 1550nm 5mw laser diode slope efficiency to56 ball TO56 ball lens cap
    Text: 1550nm InGaAsP strained MQW for FP-LD Ø1.5mm ball lens TO CAN KLT-155451x Rev. 004 Description KLT-155451x series are long wavelength Fabry-Perot LD sources in TO-56 package with ball lens cap KLT-155451x series consist of an InGaAsP strained multi-quantum well MQW laser diode(LD) and


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    1550nm KLT-155451x KLT-155451x 155Mbps lens TO STM-16 tosa 5mw 1550nm 5mw laser diode slope efficiency to56 ball TO56 ball lens cap PDF

    laser DFB 1550nm 10mW

    Abstract: TO56 package STM-16 "TO-56 package" Fabry-Perot 1550 nm to56 ball lens TO
    Text: 1550nm InGaAsP strained MQW for FP-LD Ø2mm ball lens TO CAN KLT-155452x Rev.002 Description KLT-155452x series are long wavelength Fabry-Perot LD sources in TO-56 package with ball lens cap KLT-155452x series consist of an InGaAsP strained multi-quantum well MQW laser diode(LD) and an InGaAs


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    1550nm KLT-155452x KLT-155452x 155Mbps laser DFB 1550nm 10mW TO56 package STM-16 "TO-56 package" Fabry-Perot 1550 nm to56 ball lens TO PDF

    5v 10mA reed relay

    Abstract: B40-0002 B40-0003
    Text: B40 4-Channel RF Relays Ball Grid Array 4-Channel Relays The B40 is four independent form A channels in one quad package. Coto’s Ball Grid Array BGA construction offers a breakthrough in reed relay performance. This patented technology1 allows for shorter


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    40Sec 2000Hz 5v 10mA reed relay B40-0002 B40-0003 PDF

    B40-0002

    Abstract: B40-0003 J-STD-020B IC TESTERS RS436
    Text: B40 4-Channel RF Relays Ball Grid Array 4-Channel Relays The B40 is four independent form A channels in one quad package. Coto’s Ball Grid Array BGA construction offers a breakthrough in reed relay performance. This patented technology1 allows for shorter


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    40Sec 2000Hz J-STD-020B B40-0002 B40-0003 IC TESTERS RS436 PDF

    US Relays and Technology

    Abstract: 5 pin relay 12vdc 5v 10mA reed relay relay 12vdc with diode 5 pin relay 12vdc free download relay dry reed rs 12 relay B40-0002 B40-0003 static relay coto
    Text: B40 4-Channel RF Relays Ball Grid Array 4-Channel Relays The B40 is four independent form A channels in one quad package. Coto’s Ball Grid Array BGA construction offers a breakthrough in reed relay performance. This patented technology1 allows for shorter


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    40Sec 2000Hz US Relays and Technology 5 pin relay 12vdc 5v 10mA reed relay relay 12vdc with diode 5 pin relay 12vdc free download relay dry reed rs 12 relay B40-0002 B40-0003 static relay coto PDF

    Untitled

    Abstract: No abstract text available
    Text: MP1400 7V Input, 0.6A Peak, 1.5MHz Negative DCDC Power Converter In 8-ball CSP Package DESCRIPTION FEATURES The MP1400 is a monolithic negative DCDC power converter with built-in internal power MOSFET. The DC-DC IC has a tiny surface mount 0.8mm x 1.6mm 8-ball CSP package. It


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    MP1400 MP1400 600mA MO-211, PDF

    5v 10mA reed relay

    Abstract: "coil capacitance"
    Text: B10 RF Relays Ball Grid Array Relays Coto’s Ball Grid Array BGA construction offers a breakthrough in reed relay performance. This patented technology1 allows for shorter RF paths in a controlled 50 Ω environment to minimize signal attentuation. The designer is now able to switch or pass signals with


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    40Sec 2000Hz 5v 10mA reed relay "coil capacitance" PDF

    5v 10mA reed relay

    Abstract: 5 pin relay 12vdc US Relays and Technology RS-421 relay 12vdc with diode 5 pin relay 12vdc free download
    Text: B10 RF Relays Ball Grid Array Relays Coto’s Ball Grid Array BGA construction offers a breakthrough in reed relay performance. This patented technology1 allows for shorter RF paths in a controlled 50 Ω environment to minimize signal attentuation. The designer is now able to switch or pass signals with


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    40Sec 2000Hz 5v 10mA reed relay 5 pin relay 12vdc US Relays and Technology RS-421 relay 12vdc with diode 5 pin relay 12vdc free download PDF

    4 channel rf relay board

    Abstract: quad channel relay board B41-0001 B41-0002 J-STD-020B ac dc distribution boards
    Text: B41 4-Channel RF Relays Ball Grid Array 4-Channel Relays The B41 is four independent form A channels in one planar quad package. Coto’s Ball Grid Array BGA construction offers a breakthrough in reed relay performance. This patented technology1 allows for shorter RF paths in a controlled 50Ω environment to minimize


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    45Sec 2000Hz J-STD-020B 4 channel rf relay board quad channel relay board B41-0001 B41-0002 ac dc distribution boards PDF

    super chip

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE0.2E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TE/BE-90/10 • DESCRIPTION The MBM29SL800TE/BE are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TE/BE are offered in a 48-ball FBGA and xx-ball SCSP packages.


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    MBM29SL800TE/BE-90/10 MBM29SL800TE/BE 48-ball MBM29SL800TE/BE-90 MBM29SL800TE/BE-10 100ns super chip PDF

    Untitled

    Abstract: No abstract text available
    Text: B41 4-CHANNEL RF REED RELAYS B41 Series Ball Grid Array 4-Channel Relays The B41 contains four independent form A channels in one planar quad package. Coto’s Ball Grid Array BGA construction offers a breakthrough in reed relay performance. This patented technology1 allows for shorter RF paths in a controlled 50 Ω environment to minimize signal attentuation. The designer is now able to switch or pass


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    B41ROHS J-STD-020B B41ROHS, 2000Hz PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-4E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball


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    DS05-20871-4E MBM29SL800TD/BD-10/12 MBM29SL800TD/BD 48-pin 48-ball 48-ball MBM29SL800TD/MBM29SL800BD PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-5E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball


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    DS05-20871-5E MBM29SL800TD/BD-10/12 MBM29SL800TD/BD 48-pin 48-ball PDF

    LCU130582

    Abstract: No abstract text available
    Text: 1310nm Laser Diode LCU130582E/F •Features Un-cooled Laser diode with MQW structure Wide operation temperature range Dew point below -40oC Both ball lens and flat window cap available ■External dimensions Unit : mm ■Absolute Maximum Ratings(Tc=25℃)


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    1310nm LCU130582E/F -40oC laser-comp85 lcu130582 PDF

    LuminentOIC

    Abstract: No abstract text available
    Text: 1310nm Light Emitting Diode L-13-155-G-B Features • High efficiency • -40 to 85ºC operating temperature • Hermetically sealed active component • To-46 packaging with integrated ball lens cap • Optical data communication transmitter application


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    1310nm L-13-155-G-B To-46 C/10sec LUMNDS514-OCT1405 LuminentOIC PDF

    U-LD-650578A

    Abstract: U-LD-650578A-preliminary 650NM laser diode 5mw 650nm 5mw laser diode 650nm 5mw laser Union
    Text: U-LD-650578A-preliminary UNION OPTRONICS CORP. 650nm Laser Diode 650nm Laser Diode U-LD-650578A-preliminary •Specifications 1 Device: (2) Structure: Laser Diode TO-18(ψ5.6mm) , With ball lens cap (D=1.5mm), PD ■External dimensions(Unit : mm) ■Absolute Maximum Ratings


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    U-LD-650578A-preliminary 650nm U-LD-650578A U-LD-650578A-preliminary 650NM laser diode 5mw 650nm 5mw laser diode 650nm 5mw laser Union PDF

    luminentoic

    Abstract: L-13-155-G-B
    Text: 1310nm Light Emitting Diodes L-13-155-G-B Features • High efficiency • -40 to 85ºC operating temperature • Hermetically sealed active component • To-46 packaging with integrated ball lens cap • Optical data communication transmitter application


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    1310nm L-13-155-G-B To-46 C/10sec LUMNDS514-MAR3104 luminentoic L-13-155-G-B PDF

    LCU150588F

    Abstract: No abstract text available
    Text: Laser Diodes 1550nm Laser Diode 1550nm Laser Diode LCU150588F •Features Un-cooled Laser diode with MQW structure Wide operation temperature range Dew point below -40oC Both ball lens and flat window cap available ■External dimensions Unit : mm ■Absolute Maximum Ratings(Tc=25℃)


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    1550nm LCU150588F -40oC divers-vis/lcu/lcu150588f LCU150588F PDF

    HUW0724017-01A

    Abstract: HUW0724017-01B
    Text: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SLT14D0 Series HUW0724017-01B December 25, 2007 Technical Specification of 1.55µm MQW-DFB Laser Diode with Ball Lens Cap SLT14D0 Series RoHS Compliant Page 1 of 7 Sumitomo Electric Industries, Ltd.


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    SLT14D0 HUW0724017-01B HUW0724017-01A HUW0724017-01B PDF

    HUW0624140-01A

    Abstract: HUW0624140-01B HUW0624140-01C
    Text: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SLT12D0 Series HUW0624140-01C December 25, 2007 Technical Specification of 1.31µm MQW-DFB Laser Diode with Ball Lens Cap SLT12D0 Series RoHS Compliant Page 1 of 7 Sumitomo Electric Industries, Ltd.


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    SLT12D0 HUW0624140-01C HUW0624140-01A HUW0624140-01B HUW0624140-01C PDF

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 PDF

    13001E

    Abstract: No abstract text available
    Text: laser diodes U iA ii 1310nm OED-LDC13001 SERIES Description The OED-LDC13001 Series are MQW lnA1GaAs/lnP 1310 nm laser diodes with a flat-window/ball-lens caps. They are suitable for short and medium range optical communication applications optical data links,


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    1310nm OED-LDC13001 OED-LDC13001EB) TA-NWT-000983 13001EB 13001EA 13001E PDF