Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BARRD10 Search Results

    BARRD10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: D b3E 4551Ö72 DDG1Q1D HONEYWELL/ S MULTICHIP MODULES Honeywell TÖ3 • H 0 N 3 S E C Preliminary 64K X 8 RADIATION-TOLERANT SRAM HC80805 FEATURES RADIATION OTHER • Total Dose Hardness through 1x10s rad Si02 • Spare Memory Chip can be Substituted On-The-Fly


    OCR Scan
    PDF HC80805 1x10s 1x109 1x102upsets/module-day) BADDR11 BARRD10 BDISCRI03 BDISCRI02 BDISCRI01 BADDR21

    32kx8 sram

    Abstract: VSS115 32kxS
    Text: Honeywell Advance Information HC80820 256K X 8 RADIATION-TOLERANT SRAM FEATURES R A D IA TIO N OTHER • Total D ose Hardness at Tactical Level • S pare Mem ory Chip can be Substituted O n-The-Fly • Soft Error R ate of <1 x1 O'5 upsets/bit-day or <1 upset/module-day


    OCR Scan
    PDF HC80820 PINOUR19 BADDR18 BADDR17 BADDR16 BADDR15 122-lead 32kx8 sram VSS115 32kxS

    Untitled

    Abstract: No abstract text available
    Text: fc.3E D 45S1Ô72 GDD 1 G1 1 H ONEYÙI EL L/ S 11T Honeywell *H0N3 S E C Advance Information 256K X 8 RADIATION-TOLERANT SRAM HC80820 FEATURES RADIATION OTHER • Total Dose Hardness at Tactical Level • Spare Memory Chip can be Substituted On-The-Fly • Soft Error Rate of <1x10 5upsets/bit-day


    OCR Scan
    PDF HC80820 BADDR11 BARRD10 BDISCRI02 BDISCRI01 BADDR21 BADDR20 BADDR19 BADDR18 BADDR17

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Preliminary MULTICHIP MODULES HC80805 64K X 8 RADIATION-TOLERANT SRAM FEATURES RADIATION OTHER • Total Dose Hardness through 1x106 rad Si02 • Spare Memory Chip can be Substituted On-The-Fly • Neutron Hardness through 1x1014 crrv2 • Access Time <60 nsec


    OCR Scan
    PDF 1x106 1x101 1x109 HC80805 BADDR16 BADDR15 122-lead