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    Rochester Electronics LLC BAS16WT1

    DIODE GP 100V 200MA SC70-3
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    DIODE GP 100V 200MA SC70-3
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    onsemi SBAS16WT1G

    DIODE GEN PURP 75V 200MA SC70-3
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    onsemi BAS16WT1

    DIODE SWITCH 200MA 75V SOT323
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    onsemi SBAS16WT1G/H

    Diode Small Signal Switching 75V 3-Pin SC-70 T/R - Tape and Reel (Alt: SBAS16WT1G)
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    BAS16WT1 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BAS16WT1 Motorola CASE 419-02, STYLE 2 SC-70/SOT-323 Original PDF
    BAS16WT1 On Semiconductor DIODE SWITCHING DIODE 75V 3SOT-323 T/R Original PDF
    BAS16WT1 On Semiconductor Switching Diode Original PDF
    BAS16WT1 On Semiconductor BAS16 - DIODE 75 V, SILICON, SIGNAL DIODE, CASE 419-04, SC-70, 3 PIN, Signal Diode Original PDF
    BAS16W-T1 Won-Top Electronics SURFACE MOUNT FAST SWITCHING DIODE Original PDF
    BAS16WT1-D On Semiconductor Silicon Switching Diode Original PDF
    BAS16WT1G On Semiconductor Silicon Switching Diode Original PDF
    BAS16WT1G On Semiconductor BAS16 - DIODE 0.5 A, 75 V, SILICON, SIGNAL DIODE, HALOGEN FREE AND ROHS COMPLIANT, CASE 419-04, SC-70, 3 PIN, Signal Diode Original PDF

    BAS16WT1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BAS16WT1

    Abstract: BAS16WT1G BAW62 diode marking code A6
    Text: BAS16WT1 Preferred Device Silicon Switching Diode Features • Pb−Free Package is Available http://onsemi.com 3 CATHODE MAXIMUM RATINGS TA = 25°C Symbol Value Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IR 200 mA IFM(surge)


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    PDF BAS16WT1 BAS16WT1/D BAS16WT1 BAS16WT1G BAW62 diode marking code A6

    Untitled

    Abstract: No abstract text available
    Text: BAS16WT1 Preferred Device Silicon Switching Diode Features • Pb−Free Package is Available http://onsemi.com 3 CATHODE MAXIMUM RATINGS TA = 25°C Symbol Value Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IR 200 mA IFM(surge)


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    PDF BAS16WT1 SC-70 BAS16WT1/D

    marking code onsemi Diode

    Abstract: BAS16WT1 BAW62
    Text: BAS16WT1 Preferred Device Silicon Switching Diode Features • Pb−Free Package is Available http://onsemi.com 3 CATHODE MAXIMUM RATINGS TA = 25°C Symbol Value Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IR 200 mA IFM(surge)


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    PDF BAS16WT1 BAS16WT1/D marking code onsemi Diode BAS16WT1 BAW62

    sc-70 a6

    Abstract: BAS16WT1 BAS16WT1G
    Text: BAS16WT1 Preferred Device Silicon Switching Diode Features • Pb−Free Package is Available 3 CATHODE MAXIMUM RATINGS TA = 25°C Symbol Value Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IR 200 mA IFM(surge) 500 mA PD 200 mW 1.6


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    PDF BAS16WT1 sc-70 a6 BAS16WT1 BAS16WT1G

    BAS16WT1G

    Abstract: BAW62
    Text: BAS16WT1G Silicon Switching Diode Features • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com 3 CATHODE MAXIMUM RATINGS TA = 25C Symbol Value Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current


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    PDF BAS16WT1G BAS16WT1/D BAS16WT1G BAW62

    BAS16WT1

    Abstract: BAW62 SMD310 baw62 surface mount
    Text: ON Semiconductort Silicon Switching Diode BAS16WT1 ON Semiconductor Preferred Device MAXIMUM RATINGS TA = 25°C Rating Symbol Max Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IR 200 mA IFM(surge) 500 mA PD 200 mW 1.6 mW/°C TJ, Tstg


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    PDF BAS16WT1 70/SOT r14525 BAS16WT1/D BAS16WT1 BAW62 SMD310 baw62 surface mount

    Untitled

    Abstract: No abstract text available
    Text: BAS16WT1G, BAS16WT1G Silicon Switching Diode Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


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    PDF BAS16WT1G, SBAS16WT1G AEC-Q101 SC-70 BAS16WT1/D

    MPSa06 equivalent

    Abstract: MPSA42 equivalent bf245 equivalent 2N5087 equivalent BC237 bf245a equivalent equivalent components of transistor bc107 2N2222A motorola MPSa56 equivalent EQUIVALENT TRANSISTOR bc109c
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Switching Diode BAS16WT1 Motorola Preferred Device 3 CATHODE 1 ANODE 3 MAXIMUM RATINGS TA = 25°C Symbol Max Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IR 200 mA IFM(surge) 500 mA


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    PDF BAS16WT1 70/SOT RJ218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MPSa06 equivalent MPSA42 equivalent bf245 equivalent 2N5087 equivalent BC237 bf245a equivalent equivalent components of transistor bc107 2N2222A motorola MPSa56 equivalent EQUIVALENT TRANSISTOR bc109c

    sc-70 a6

    Abstract: SBAS16WT1G sbas16wt 0095E-13
    Text: BAS16WT1G, BAS16WT1G Silicon Switching Diode Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


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    PDF BAS16WT1G, SBAS16WT1G AEC-Q101 SC-70 BAS16WT1/D sc-70 a6 sbas16wt 0095E-13

    BAS16WT1

    Abstract: BAW62 SMD310 baw62 surface mount
    Text: MOTOROLA Order this document by BAS16WT1/D SEMICONDUCTOR TECHNICAL DATA Silicon Switching Diode BAS16WT1 Motorola Preferred Device 3 CATHODE 1 ANODE 3 MAXIMUM RATINGS TA = 25°C 1 Symbol Max Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current


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    PDF BAS16WT1/D BAS16WT1 70/SOT BAS16WT1 BAW62 SMD310 baw62 surface mount

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort Silicon Switching Diode BAS16WT1 ON Semiconductor Preferred Device MAXIMUM RATINGS TA = 25°C Rating Symbol Max Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IR 200 mA IFM(surge) 500 mA PD 200 mW 1.6 mW/°C TJ, Tstg


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    PDF BAS16WT1 70/SOT r14525 BAS16WT1/D

    Untitled

    Abstract: No abstract text available
    Text: BAS16WT1G Silicon Switching Diode Features • S and NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


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    PDF BAS16WT1G BAS16WT1/D

    D1BAW62

    Abstract: No abstract text available
    Text: ON Semiconductort Silicon Switching Diode BAS16WT1 ON Semiconductor Preferred Device MAXIMUM RATINGS TA = 25°C Rating Symbol Max Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IR 200 mA IFM(surge) 500 mA PD 200 mW 1.6 mW/°C TJ, Tstg


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    PDF BAS16WT1 70/SOT D1BAW62

    Untitled

    Abstract: No abstract text available
    Text: BAS16WT1 Preferred Device Silicon Switching Diode Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS TA = 25°C Symbol Value Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IR 200 mA IFM(surge) 500 mA PD


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    PDF BAS16WT1 SC-70

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


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    PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    SMD Transistors w04 sot-23

    Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
    Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.


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    PDF represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355

    transistor mosfet buv18a

    Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
    Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9


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    PDF

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


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    PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    BC337 BC547

    Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
    Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the


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    PDF MDC5000T1 MDC3105LT1 BC337 BC547 MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM

    2N3906 Darlington transistor

    Abstract: BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212
    Text: CHAPTER 1 Selector Guide http://onsemi.com 5 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11


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    PDF M1MA151AT1 M1MA151KT1 M1MA152AT1 M1MA152KT1 M1MA151WAT1 M1MA151WKT1 M1MA152WAT1 M1MA152WKT1 BAS16WT1 M1MA141KT1 2N3906 Darlington transistor BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212

    mps2112

    Abstract: UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp
    Text: SG388/D Rev. 4, May-2002 Master Components Selector Guide Master Components Selector Guide ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular


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    PDF SG388/D May-2002 r14525 SG388 mps2112 UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp

    Untitled

    Abstract: No abstract text available
    Text: M O T O !R O L A SEMICONDUCTOR TECHNICAL DATA Order this document by BAS16WT1/D Silicon Sw itching Diode BAS16WT1 Motorola Preferred Device 3 O CATHODE O 1 ANODE MAXIMUM RATINGS Ta = 25°C Symbol Max Unit Continuous Reverse Voltage Vr 75 V Recurrent Peak Forward Current


    OCR Scan
    PDF BAS16WT1/D BAS16WT1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Switching Diode BAS16WT1 M otorola Preferred Device 3 o 14 CATHODE MAXIMUM RATINGS o 1 ANODE TA = 25 C Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 ^s


    OCR Scan
    PDF BAS16WT1 -70/S T-323

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BAS16WT1/D SEMICONDUCTOR TECHNICAL DATA S ilicon S w itchin g Diode BAS16WT1 Motorola Preferred Device 3 O CATHODE H O 1 ANODE MAXIMUM RATINGS TA = 25°C Rating Symbol Continuous Reverse Voltage Recurrent Peak Forward Current


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    PDF BAS16WT1/D BAS16WT1 SC-70/SO T-323 6S479 AS16W