KA 2418
Abstract: diode 3683 B431 B431AM B431AR B431AZ B431BR B431BZ B431CR B431CZ
Text: Bay Linear Inspire the Linear Power B431 2.5V Adjustable Shunt Regulator Description Features The Bay Linear B431 is a three terminal adjustable shunt regulator with thermal stability over Temperature range. Using two external resistors allows the output voltage to be adjusted
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to100mA
105oC
OT-89,
KA 2418
diode 3683
B431
B431AM
B431AR
B431AZ
B431BR
B431BZ
B431CR
B431CZ
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Untitled
Abstract: No abstract text available
Text: Bay Linear Inspire the Linear Power B431 2.5V Adjustable Shunt Regulator Description Features The Bay Linear B431 is a three terminal adjustable shunt regulator with thermal stability over Temperature range. Using two external resistors allows the output voltage to be adjusted
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to100mA
105oC
OT-89,
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B3431
Abstract: B3431AK3 B3431BK3 B3431CK3 LM3431 Diode BAY 80 Diode BAY 55
Text: Bay Linear Inspire the Linear Power B3431 Adjustable Shunt Regulator Description Features The Bay Linear B3431 is a three terminal adjustable shunt regulator with thermal stability over Temperature range. Using two external resistors allows the output voltage to be adjusted from 2.5V to 36V. With a sharp
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B3431
B3431
to100mA
105oC
OT-23
2478Armstrong
B3431AK3
B3431BK3
B3431CK3
LM3431
Diode BAY 80
Diode BAY 55
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ASCOM 48V 150A
Abstract: KS-20472-L1S ASCOM rectifier ED83119 ed83119-30 ED83246-30 KS-22089 KS-20472 h569-429 welding rectifier schematic
Text: Product Manual H569-429 Select Code 167-792-120 Comcode 107966541 Issue 2 June 1998 Lucent Technologies 600-Ampere, 140-Volt Galaxy Control and Distribution Bay for New and Retrofit 4ESS Applications Notice: Every effort was made to ensure that the information in this
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H569-429
600-Ampere,
140-Volt
H569-429
ASCOM 48V 150A
KS-20472-L1S
ASCOM rectifier
ED83119
ed83119-30
ED83246-30
KS-22089
KS-20472
welding rectifier schematic
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HR433a
Abstract: KS-15544 L508 J85503C3 ks 15544 364A3 lineage 2000 KS-20472 KS-15544 KS-15544 L501 J85503C ks22010
Text: Lineage 2000 Battery Plant J85500A-2 Product Manual Select Code 167-790-032 Comcode 108190596 Issue 6 January 2008 Product Manual Select Code 167-790-032 Comcode 108190596 Issue 6 January 2008 Lineage® 2000 Battery Plant J85500A-2 Notice: The information, specifications, and procedures in this manual are
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J85500A-2
HR433a
KS-15544 L508
J85503C3
ks 15544
364A3
lineage 2000 KS-20472
KS-15544
KS-15544 L501
J85503C
ks22010
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364A3
Abstract: J85500A-2 J85500A2 lineage 2000 ecs lineage 2000 power plant ECS lucent 595B KS-15544 lineage 2000 KS-20472 J85503C LUCENT 50A RECTIFIER
Text: Lineage 2000 Battery Plant J85500A-2 Product Manual Select Code 167-790-032 Comcode 108190596 Issue 4 April 1999 1999 Lucent Technologies Product Manual Select Code 167-790-032 Comcode 108190596 Issue 4 April 1999 Lineage® 2000 Battery Plant J85500A-2
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J85500A-2
364A3
J85500A-2
J85500A2
lineage 2000 ecs
lineage 2000 power plant ECS
lucent 595B
KS-15544
lineage 2000 KS-20472
J85503C
LUCENT 50A RECTIFIER
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Diode BAY 21
Abstract: Diode BAY 46 ir 0588
Text: A E G 17 E CORP D aaa'mab 3 q q qt t s s BAY 135 TTIILIIMllfillKiKl electronic Creative Technologies 1 01 0 Silicon Planar Diode " - - ? Applications: Protection circuits, delay circuits Features: • Very low reverse current Dimensions in mm 9i io e Cathode
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Diode BAY 55
Abstract: Diode BAY 88 Diode BAY 21 Diode BAY 45 BAY 88 diode BAY 87 diode U264 B u264 74345 BAV86
Text: BAY 86 * BAY 87 • BAY 88 Silizium-Diffusions-Dioden Silicon diffusion diodes Anwendungen: Allgemein Applications: General purposes Abmessungen in mm Dimensions in mm g 2,6 Absolute Grenzdaten Absolute maximum ratings Normgehäuse Case 5 1 A 2 DIN 41880 JEDEC DO 7
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U-26-Â
Diode BAY 55
Diode BAY 88
Diode BAY 21
Diode BAY 45
BAY 88 diode
BAY 87 diode
U264 B
u264
74345
BAV86
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Diode BAY 54
Abstract: tfk 341 Diode BAY 74 TFK 68 diode Diode BAY 45 TFK 341 T 74340 TFK 101 bay 68 diode Diode BAY 68
Text: BAY 68 - BAY 69 Silizium-Epitaxial-Planar-Dioden Silicon epitaxial planar diodes Anwendungen: Sehr schnelle Schalter Applications: Very fast switches Abmessungen in mm Dimensions in mm 01.9 KATHODE CATHODE Normgehäuse Case 54 A 2 DIN 41880 JEDEC DO 35 Gewicht • Weight
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Diode BAY 46
Abstract: 1N 4000 diode 1N3069 BA224-220 BAV45 BAY41 Diode BAY 41 Diode BAY 80 BAX12 SFD49
Text: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m so n -csf Case \> F A V 200.225 mA 100.150 mA 50.90 m A 400 m A Vr ( V » \ 10 J 1N 456 A €£043 1N456 25 W 449)11 rtm a a j
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1N456
BAW21A
CB-26)
CB-127
Tamb100Â
Tamb125Â
Tamb60Â
CB-127
CB-127.
Diode BAY 46
1N 4000 diode
1N3069
BA224-220
BAV45
BAY41
Diode BAY 41
Diode BAY 80
BAX12
SFD49
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23J2
Abstract: BAW32D BAY18 1N484 1n484a 1N456 1N457 1N461 1N462 1N483
Text: silicon signal diodes diodes de signal au silicium Type vF / v r -v r m >o m ax V max (m A) general purpose m ax (V) THOMSON-CSF iF |r (mA) m ax (nA) / C Styp m ax (pF) Vr (V) Casa usage général Tam b = 25°C 1N456 1N 456 A 1N457 1N 457 A 1N461 25 25- 30
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1N456
1N457
1N461
1N462
1N483
1N484
CB-26)
23J2
BAW32D
BAY18
1n484a
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Diode BAY 46
Abstract: Diode BAY 45 Diode BAY 21 Diode BAY 80 Diode BAY 19 BAY 73 diode Diode BAY 41 Diode BAY 72 Diode BAY 42 bav 21 diode
Text: th o m so n -csf general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général Case \> F A V 200.225 m A 100.150 m A 50.90 m A 400 m A Vr( V » \ 10 25 €£043 1N456 J 1N 456 A W 449)1 1 30 rtm a a j
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1N456
BAW21A
1N456
BAX12
CB-102)
CB-104)
Diode BAY 46
Diode BAY 45
Diode BAY 21
Diode BAY 80
Diode BAY 19
BAY 73 diode
Diode BAY 41
Diode BAY 72
Diode BAY 42
bav 21 diode
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sy 170
Abstract: SY 356 SY 360 05 sy 710 sy 360 Dioden SY 250 byx 21 SY 320 sy710 Halbleiterbauelemente DDR
Text: FUNKAMATEUR-Bauelementeinformation VD Vergleichsliste für Dioden DDR/international D D R - Vergleichs Typ typ GA 100 G A 101 G A 102 GA 104 G A 105 GAY 61 GAY 64 SA 412 SA 415 SA 418 SAY 12 SAY 16 o SAY 17 SAY 18 SAY 20 SAY 30 SAY 32 SAY 40 SAY 42 SY 170
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N4001.
sy 170
SY 356
SY 360 05
sy 710
sy 360
Dioden SY 250
byx 21
SY 320
sy710
Halbleiterbauelemente DDR
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Diode BAY 46
Abstract: Diode BAY 80 Diode BAY 74 Diode BAY 45 Diode BAY 19 diode BAW55 BAY 73 diode 1N3595 Diode BAY 21 Diode BAY 41
Text: general purpose and switching diode selector guide guide de sélection diodes de commutation et usage général tho m so n -csf Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 J €£043 1N456 25 1N 456 A W 449)1 1 30 rtm a a
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1N456
BAW21A
SFD79
CB-26)
baw55
CB-127
CB-127.
Diode BAY 46
Diode BAY 80
Diode BAY 74
Diode BAY 45
Diode BAY 19
diode BAW55
BAY 73 diode
1N3595
Diode BAY 21
Diode BAY 41
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Diode BAY 71
Abstract: Diode BAY 45 SFD43 Diode BAY 46 Diode BAY 88 BAW21 ESM 3070 1n 4009 diode BAY67 SFD49
Text: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m s o n -c s f Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 25 J €£043 1N456 1N 456 A W 449)1 1 30 rtm a a
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1N456
BAW21A
BAW75
BAW76
BAX84
SFD43
CB-104)
34/CB-104)
CB-127
CB-127.
Diode BAY 71
Diode BAY 45
Diode BAY 46
Diode BAY 88
BAW21
ESM 3070
1n 4009 diode
BAY67
SFD49
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Diode BAY 21
Abstract: Diode BAY 18 Diode BAY 32 Diode BAY 19 Diode BAY 12 Diode BAY 45 BAY46 BAW32B BAY18 BAW32D
Text: general purpose and sw itching diode selector guide guide de sélection diodes de commutation et usage général t h o m s o n -c s f Case \> F A V 200.225 m A 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 €£043 1N456 25 J 1N 456 A W 449)1 1 rtm a a j
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1N456
BAW21A
CB-26)
Diode BAY 21
Diode BAY 18
Diode BAY 32
Diode BAY 19
Diode BAY 12
Diode BAY 45
BAY46
BAW32B
BAY18
BAW32D
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Diode BAY 45
Abstract: Diode BAY 89 41880
Text: BAY 89 Silizium-Diffusions-Diode Silicon diffusion diode Anwendungen: Allgemein, für sehr hohe Betriebsspannungen Applications: General purpose, for very high supply voltages Normgehäuse Case 5 1 A 2 DIN 41880 JEDEG DO 7 Gewicht • Weight max. 0,2 g Abmessungen in mm
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Diodes de redressement
Abstract: BAY21 BAY18 BOITIER MU86 f 1010 fr 608 TF80 650C RG606 fr 1004 diodes
Text: DIODES DE REDRESSEMENT RAPIDE fast recovery rectifier diodes VRWM 'FSM VF @ •f r m 10 ms •f m A (A) (V) vrmm TYPES 60 A / 'F (A) tease = 75°C •R G 6 0 2 F -R G 6 0 2 *RG 604 F - RG 604 •RG 606 F - RG 606 *RG 608 F - RG 608 *RG 610 F - RG 610 100 A
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BA513
Abstract: BA521 BA517 BA543 BA521 diode BA523 BA531 BA519 BA533 BA544
Text: Silicijeve planarne signalne diode Silicon planar signal diodes Tip/Type I fav 1100M pri/at pri/at pri/at 1 MHz 25 °C i}*mb—25 °C 25°C Ur Ur=OV : mA " BA 511 BA 513 BA 517 BA 518 BA 519 BA 520 BA 521 BA 523 BA 531 BA 533 BA 543 BA 544 BA 545 BA 546
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BA511
1N4148
BA513
1N4448
BA517
1N4150
BA518
1N4151
BA519
1N4152
BA521
BA543
BA521 diode
BA523
BA531
BA533
BA544
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iskra diode
Abstract: BA513 BA531 Iskra by dioda DIODE ISKRA BA519 Iskra BA-518 1N4153 silicon diodes BA517
Text: IS K R A E L E C T R O N IC S IN C 2SE D • 4 fifiB 4 7 7 Silicijeve planarne signalne diode Silicon planar signal diodes Uf prl/at If I fav *'. Übb : ■ ^trr > ' pri/at pri/at pri/at 1 MHz ¿tOÓ/iA: 25 °C Ùufib —25 °C 25°C Ur Ur=OV Tip/Type mA
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BA511
1N4148
BA513
1N4448
BA517
1N4150
BA518
1N4151
BA519
1N4152
iskra diode
BA531
Iskra by dioda
DIODE ISKRA
Iskra
BA-518
1N4153 silicon diodes
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BA513
Abstract: iskra diode BA523 BA521 BA519 DIODE BA531 BA521 diode BA531 iskra BA533
Text: ISKRA ELECTRONICS INC SSE D • 4063477 Silicijeve planarne signalne diode Silicon planar signal diodes *'. lien Tip/Type BA 511 BA 513 BA 517 BA 518 BA 519 BA 520 BA 521 BA 523 BA 531 BA 533 BA 543 BA 544 BA 545 BA 546 BA 547 :io o m 1N4148 1N4448 1N4150
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BA511
1N4148
BA513
1N4448
BAS17
1N4150
701/iA
BA518
1N4151
BA519
iskra diode
BA523
BA521
DIODE BA531
BA521 diode
BA531
iskra
BA533
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IR diodes TFK 4
Abstract: TTC 103 tfk bay 78 TFK diodes TTC 104 Diode BAY 80 4G75 BAY78 74343 diode s .* tfk
Text: BAY 78 Silizium-Epitaxial-Planar-Dioden-Quartett Silicon epitaxial planar diodes quad Anwendungen: Ringmodulatoren und Brückenschaltungen Applications: Ringmodulators and bridge circuits Abmessungen in mm Dimensions in mm 1 3 5 5_ -~r~ ?r 3 1 - 5 9,5 U — 9 .5 -»
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Diode BAY 93
Abstract: No abstract text available
Text: BAY 93 'W Silizium-Epitaxial-Planar-Diode Silicon epitaxial planar diode Anwendungen: Sehr Schnelle Schalter Applications: Very fast switches Abmessungen in mm Dimensions In mm »’»• KATHODE 01,9 CATHODE 0 0 ,5 8 Normgehäuse Case 54 A 2 DIN 41880 JEDEC DO 35
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Jun7/0474
Diode BAY 93
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cqx 87
Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157
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AA113
AA117
AA119
BAV17
BAV18
BAV19
BAV20
BAV21
cqx 87
germanium
AEG Thyristor T 558 F
TDA 2516
bu208
bf506
la 4430
BF963
TDA1086
transistor bf 175
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