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    BC 109 TRANSISTOR Search Results

    BC 109 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BC 109 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bc 303 transistor

    Abstract: BC 109 Transistor TRANSISTOR BC 109 BC 107 transistor A 107 transistor transistor bc 107 bc 107 npn transistor BC 108 transistor BC107 BC109
    Text: * B C 107 * BC 108 BC 109 \IPN SILICON TRANSISTORS, EPITAXIAL PLANAR rRANSISTORS NPN SILICIUM, PLANAR EPITAXIAUX Jompl. of BC 177, BC 178, BC 179 îfc Preferred device Dispositif recommandé The NPN "plan epitaxial" transi ton BC 107, 3C 108 and BC 109 are intended for use in


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    2N9303

    Abstract: cbc 546 CBC 546 c 250.250 BC108A 10745 2N2483 107bbc
    Text: NPN Silicon Transistors NPN Silicon Planar Transistors for low-level audio applications Common maximum ratings Type b v CFO V BVCSO V b v ebo PN PN PN PN PN PN PN PN PN PN - BC 107 BC 107 A BC 107 B BC 108 BC 108 A BC 108 B BC 108 C BC 1092 BC 109 B2 BC 109 C2


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    PDF 300mW 200mW V/10uA) 10mA/0 2N9303 2N24832 2N24843 cbc 546 CBC 546 c 250.250 BC108A 10745 2N2483 107bbc

    ZO 109

    Abstract: BC 107 BC109 bc107 bc 109 BC108 bc 108 zo 107 X10-4 bc 230
    Text: BC 107 BC 108 BC 109 SILICON PLANAR NPN LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC107, BC 108 and ESC 109 are silico n planar epitaxial NPN transistors in TO-18 metal case. They are suitable fo r use in driver stages, low noise input stages and signal processing circ u its of television receivers.


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    PDF BC109 BC177, BC178 BC179. ZO 109 BC 107 bc107 bc 109 BC108 bc 108 zo 107 X10-4 bc 230

    TRANSISTOR BC 137

    Abstract: BC107 characteristic BC 108 transistor transistor bc 102 TRANSISTOR BC 109 NT 101 bc108 b 108 b BC 107 transistor transistor bc 107
    Text: 2SC D • û23SbG5 OOGMOÛT T ■ S IE G ^ T -*?-// NPN Silicon Transistors SIEMENS A KTIEN G ESELLSCH A F IC 107 J C 108 - BC 109 B C 107, BC 108, and BC 109 are epitaxial NPN silicon planar transistors in T 0 18 metal case


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    PDF 23SbG5 Q62702-C680 Q60203-X107-A Q60203-X107-B Q60203-X108 Q60203-X108-A Q60203-X108-B Q60203-X108-C 60203-X109 Q60203-X109-B TRANSISTOR BC 137 BC107 characteristic BC 108 transistor transistor bc 102 TRANSISTOR BC 109 NT 101 bc108 b 108 b BC 107 transistor transistor bc 107

    TRANSISTOR BC 208

    Abstract: TRANSISTOR BC 158 TRANSISTOR BC 157 transistor BC-148 bc 106 transistor transistor BC 209 FOR TRANSISTOR BC 149 B BC 114 transistor transistor bc 209 b TRANSISTOR BC 187
    Text: BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC 183L 184 184L 186 187 179 181 182 182L 183 172 173 174 177 178 167 168 169 170 171 135 154 157 158 159 114 132 147 148 149 107 108 109 110 113 •c m Z Z Z “0 -0 "0 "0 2


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    PDF lbDT17flfl DDDDh43 O-106 O-92F to-02 melf-002. melf-006 to-237 TRANSISTOR BC 208 TRANSISTOR BC 158 TRANSISTOR BC 157 transistor BC-148 bc 106 transistor transistor BC 209 FOR TRANSISTOR BC 149 B BC 114 transistor transistor bc 209 b TRANSISTOR BC 187

    BC109

    Abstract: bc107 BC 107 BC108 bc 230 BC178 BC179 bc 750 BC-1096 bc audio transistors
    Text: BC 107 BC 108 BC 109 SILICON PLANAR NPN LOV/ NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC 107, BC 108 and BC109 are silicon planar epitaxial NPN transistors in TO-18 metal case. They are suitable fo r use in driver stages, low noise input stages and signal processing circu its of television receivers.


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    PDF BC109 BC178 BC179. 100mA Jun108 bc107 BC 107 BC108 bc 230 BC179 bc 750 BC-1096 bc audio transistors

    transistor bc 325

    Abstract: transistor bf 179 Transistor BC 177 TO-18 BC-177 pnp transistor transistor BC 324 transistor bc 102 low noise transistor bc 179 transistor bc 321 BC 177 transistor BC 109 Transistor
    Text: ^ BC 177 * BC178 BC179 PNP SILICON TRANSISTORS, EP ITAXIAL PLANAR TRANSISTORS PNP S ILIC IU M , PLAN A R E P IT A X IA U X Compì, of BC 107, BC 108, BC 109 H* Preferred device Dispositif recommandé The PNP planar epitaxial transistors BC 177, 3C 178 and BC 179 are intended for use in L.F.


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    PDF h21e- transistor bc 325 transistor bf 179 Transistor BC 177 TO-18 BC-177 pnp transistor transistor BC 324 transistor bc 102 low noise transistor bc 179 transistor bc 321 BC 177 transistor BC 109 Transistor

    TFK BC

    Abstract: TFK 110 TFK 309 TFK 727 tfk 4 309 tfk 238 BC109 tfk bc108 BC107 TFK 330
    Text: BC 107 • B C 1 0 8 - B C 109 BC 237 • BC 238 • BC 239 'W Silizium-NPN-Epitaxial -Planar NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen A p p lic a tio n s : AF pre and driver stages Features: Besondere Merkmale:


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    PDF BC108 BC109 TFK BC TFK 110 TFK 309 TFK 727 tfk 4 309 tfk 238 BC109 tfk bc108 BC107 TFK 330

    TRANSISTOR BC 137

    Abstract: TRANSISTOR bc107 current gain BC107 characteristic transistor bc 138 transistor BC109 bc 104 npn transistor XL08 bc109 BC107 Transistor BC107
    Text: 2SC D • 023SbGS 00Q40ÔC1 T ■ S I E G ^ r NPN Silicon Transistors _ T -a f-V f SIEMENS AKTIEN G ESELLSCHA F IC 107 J C 108 BC 10g B C 107, BC 108, and BC 109 are epitaxial NPN silicon planar transistors in T 0 18 metal case 18 A 3 DIN 41876 . The collector is electrically connected to the case.


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    PDF 023SbGS BC107, BC1071Â Q62702-C680 Q60203-X107-A Q60203-X107-B Q60203-X108 BC108 Q60203-X108-A Q60203-X108-B TRANSISTOR BC 137 TRANSISTOR bc107 current gain BC107 characteristic transistor bc 138 transistor BC109 bc 104 npn transistor XL08 bc109 BC107 Transistor BC107

    2sc 9015

    Abstract: 2SC644 CS9015 9014n BC 945 transistor BC 945 2N4248 BC267 2SC828 2sc828a
    Text: BC BC BC BC BC 132 153 154 167 168 107 108 109 113 114 Z Z Z Z Z Z Z -0 -0 z Z Z Z Z Z TO-106 TO-92F TO-92B TO-92F TO-92B 901-01 90101 901-01 901-01 901-01 TO-92F TO-92B TO-92F TO-92B TO-18 TO-18 TO-18 TO-18 TO-92F TO-92B 3 3 3 3 â <b <b <b cb b M IO M tO K


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    PDF BC107 O-106 O-92B -26UNF-2A O-48D 2sc 9015 2SC644 CS9015 9014n BC 945 transistor BC 945 2N4248 BC267 2SC828 2sc828a

    BC107 characteristic

    Abstract: BC109 MOTOROLA BC108 motorola BC107 BC109 characteristic BC107 MOTOROLA h22e bc107a BC109 BC108 characteristic
    Text: MOTOROLA SC XSTRS/R F 12E 0 I b3b?SSM G0ä b4S S 1 BC107, A, B* C thru BC109, A, B, C M A X IM U M RATINGS R a tin g Sym bol BC BC BC 107 108 109 U nit Collector-Emitter Voltage VCEO 45 25 25 Vdc Collector-Base Voltage VcBO 50 30 30 Vdc Em itter-Base Voltage


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    PDF BC107, BC109f O-206AA) BC107 characteristic BC109 MOTOROLA BC108 motorola BC107 BC109 characteristic BC107 MOTOROLA h22e bc107a BC109 BC108 characteristic

    Untitled

    Abstract: No abstract text available
    Text: BC107, A, B, C thru BC109, A, B, C MAXIMUM RATINGS Rating Symbol BC BC BC 107 108 109 Unit C o lle c to r-E m itte r V o lta g e VCEO 45 25 25 Vdc C o lle c to r-B a s e V o lta g e VCBO 50 30 30 Vdc E m itte r-B a s e V o lta g e VEBO 6 5 5 CASE 22-03, STYLE 1


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    PDF BC107, BC109, O-206AA)

    bc 170

    Abstract: BC108C 173C BC174 bc 170 c transistor Bc 540 BC108A BFY19 BC 109 Transistor specification of transistor bc 107
    Text: NPN Silicon Transistors NPN Silicon Epitaxial Planar Transistors l c = 100mA for general amplifying and switching purposes Common maximum ratings - lc -V e B O 100 mA5 5 V5 Common characteristics (Tamb — 25 C) 300 mW (TO -92)3 300 mW (TO -18)4 Ti P lo t


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    PDF 100mA) BC108B BC108C. bc 170 BC108C 173C BC174 bc 170 c transistor Bc 540 BC108A BFY19 BC 109 Transistor specification of transistor bc 107

    NBC107

    Abstract: PH BC107 BC 109B BC107 Tr BC109
    Text: DISCRETE SEMICONDUCTORS BC107; BC108; BC109 NPN general purpose transistors Product specification Supersedes data of 1997 Jun 03 File under Discrete Semiconductors, SC04 Philips Semiconductors 1997 Sep 03 PHILIPS Philips Semiconductors Product specification


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    PDF BC107; BC108; BC109 117047/00/04/pp8 NBC107 PH BC107 BC 109B BC107 Tr BC109

    transistor vergleichsliste

    Abstract: Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR vergleichsliste transistor BC-148 rft transistoren Transistoren DDR
    Text: TRANSISTOR VERGLEICHSLISTE Teil 2: Siliziumtransistoren r a d io - t e le v is io n Transistorverglèich& liste T eil 2 : S iliziu in tra n sistoren TRA N SISTO R, V ER G LEICH S LIS T E Teil 2: Siliziumtransistoren DER D EU TSCH EN M IL IT Ä R V E R L A G


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    BC107 characteristic

    Abstract: BC107 BC109 BC108 characteristic BC109 characteristic BC108 bc109 gain BC109 am Transistor BC107 Transistor BC109
    Text: BC107, BC108, BC109 NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications The transistors are subdivided into three groups A, B and C according to their current gain. Type BC107 is available in groups A and B, type BC108 in groups A, B and C, and type


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    PDF BC107, BC108, BC109 BC107 BC108 BC109 BC107 characteristic BC108 characteristic BC109 characteristic bc109 gain BC109 am Transistor BC107 Transistor BC109

    bc 540

    Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N
    Text: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0


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    PDF BC1611) BCY58 BCY59 BD1361) BD436' BC432' BC547 bc 540 TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N

    BC113

    Abstract: No abstract text available
    Text: CONSUMER TRANSISTORS continued < _§ X CD E u > > CD O a. """a) o ’ o o n o @ Li. a. >• UJ ll.c PACKAGE P O L A R ITY DESCRIPTION (A )0 3 3 A TYPE High voltage amplifiers o in CM II ro 1@ < j= _u 5 a a. BC 300 NPN Audio driver 80 120 1000 (10) 140 5


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    BC109

    Abstract: BC107 BC103 BC108-BC109 BC108 BC 55 r7 BC108-BC bc109 gain BC-108-2 BC177
    Text: T> 3QE m 7^ETS3? QQ3DÔSS S • ~ ^ F Vr,- - _ f= 7 S M ' S G G I S - T ^ © H O M S O - Z ° i N l L i © T f[R M a û S B C - [ 1 B C 1 0 7 1 0 8 - B C 1 0 9 “ S-TH0MS0N LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS


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    PDF BC107 BC108-BC109 BC107, BC108 BC109 BC177, BC178 BC179. BC107 BC103 BC108-BC109 BC 55 r7 BC108-BC bc109 gain BC-108-2 BC177

    BC113

    Abstract: audio NPN bc 657 BC 114
    Text: CONSUMER TRANSISTORS continued > Li. a. < _§ X CD E u > CD O """a) o ’ o o n o @ a. >• UJ ll.c PACKAGE POLARITY DESCRIPTION (A )03 3A TYPE High voltage amplifiers o in CM II ro 1@ < j= _u 5 a a. BC 300 NPN Audio driver 80 120 1000 (10) 140 5 0.85 BC 393


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    BFY76

    Abstract: 2N930 BCY58 BCY59 BFX41 2N4033
    Text: r=7 SGS-THOMSON 1 MOtgiOEtLKBir^QRilOOi GENERAL PURPOSE & INDUSTRIAL SMALL SIGNAL TRANSISTORS PNP GENERAL PURPOSE TRANSISTORS - TO 39 v CEO hFE min/max «$ Type >c mA (V) v CE(sat) max î* lcflB (V) »T min *s Ptot (mA) (MHz) ‘off* (ns) (mW) 55 85/—


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    PDF BFX41 2N930 BFY76 BCY59 BCY58 BCY58 2N4033

    BTO18

    Abstract: sc 107 b BC190B BC190 BC140 BC 241 bo 139 BC107 2N3708 2N3707
    Text: Silicon NPN transistors, general purpose continued Tamb = 25 <>C Transistors N P N silicium, usage général (suite) <5 v CEO Case ^tot (mW) (V) h2 lE VcER* h2 lE * VCE X ° min >C v CEsat (V) max ImA} ft (ns) (MHz) 'off* max max l C/lB (mA> min TSi 76 Page


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    PDF BC140 BTO18 sc 107 b BC190B BC190 BC 241 bo 139 BC107 2N3708 2N3707

    BC238

    Abstract: bc177-vi bc140 1012C 026 pnp
    Text: AF transistors Type Group A B BC 108 A B C B C BC 140 uCBO f j I q and 45 45 300 300 10 10 2 2 5 5 < 10 <10 20 20 20 300 300 300 10 10 10 110-220 200-450 110-220 200-450 420-800 2 2 2 5 5 5 20 20 300 300 10 10 200-450 420-800 2 2 5 5 £10 £10 £ 10 £4 £4


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    BC179

    Abstract: BC pnp 200mA UL2466 BC 179 j246 em 179
    Text: BC 177 BC 178 BC179 SILICON PLANAR PNP LOW N O IS E G E N E R A L P U R P O S E A U D I O A M P L I F I E R S The B C 177, B C 178 and B C 179 are silicon planar epitaxial P N P transistors in T O - 1 8 metal case. They are suitable for use in driver audio stages, low noise input audio stages and as low


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    PDF BC179 BC pnp 200mA UL2466 BC 179 j246 em 179