BC109C NPN Search Results

BC109C NPN Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
MX0912B251Y	Rochester Electronics LLC	MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die)
CA3083Z-G	Rochester Electronics LLC	CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY
CA3046	Rochester Electronics LLC	RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN
ISL73096EHVF	Renesas Electronics Corporation	Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays

BC109C NPN Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MLED96 Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA Text: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B	Original	PDF	ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 MLED96 BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Untitled Abstract: No abstract text available Text: BC109C Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)30 I(C) Max. (A)200m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)15nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	PDF	BC109C Freq150M
bc108b Abstract: bc109c bc107 Transistor BC107 NPN BC108B transistor transistor bc107b for transistor bc107 bc109 Transistor BC109 BC107B Text: BC107,A,B BC108B,C BC109B,C NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BC107, BC108, BC109 series types are small signal NPN silicon transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier	Original	PDF	BC107 BC108B BC109B BC107, BC108, BC109 BC107) BC107A) BC107B, bc109c Transistor BC107 NPN BC108B transistor transistor bc107b for transistor bc107 Transistor BC109 BC107B
TRANSISTOR bc108 Abstract: BC107 Transistor application notes transistor BC107 specifications BC109c transistor Transistor BC107 BC109C BC107A Transistor BC109 BC108 applications of Transistor BC108 Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BC107; BC108; BC109 NPN general purpose transistors Product specification Supersedes data of 1997 May 01 File under Discrete Semiconductors, SC04 1997 Jun 03 Philips Semiconductors Product specification NPN general purpose transistors	Original	PDF	M3D125 BC107; BC108; BC109 BC177, BC178 BC179. TRANSISTOR bc108 BC107 Transistor application notes transistor BC107 specifications BC109c transistor Transistor BC107 BC109C BC107A Transistor BC109 BC108 applications of Transistor BC108
transistor BC107 specifications Abstract: BC107 Transistor application notes TRANSISTOR bc108 Transistor BC107 TRANSISTOR DATASHEET BC107B BC109c TRANSISTOR bc107 current gain BC107 equivalent transistors DATASHEET Transistor BC109 symbol transistor BC108 Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BC107; BC108; BC109 NPN general purpose transistors Product specification Supersedes data of 1997 Jun 03 File under Discrete Semiconductors, SC04 1997 Sep 03 Philips Semiconductors Product specification NPN general purpose transistors	Original	PDF	M3D125 BC107; BC108; BC109 BC177. MAM264 SCA55 transistor BC107 specifications BC107 Transistor application notes TRANSISTOR bc108 Transistor BC107 TRANSISTOR DATASHEET BC107B BC109c TRANSISTOR bc107 current gain BC107 equivalent transistors DATASHEET Transistor BC109 symbol transistor BC108
bc109b datasheet Abstract: BC337 BC547 bc237 bc546 bc108 TO-92 bc108b equivalent bc546 equivalent BC109B equivalent 2PC945K BC108 to92 2PC945P Text: Philips Semiconductors Small-signal Transistors Selection guide LEADED DEVICES NPN GENERAL PURPOSE LOW-POWER TRANSISTORS TYPE NUMBER PACKAGE VCEO max. V IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) 800 60 2N2484 TO-18 60 50 360 250 2N4124	Original	PDF	2N2484 2N4124 2N5088 2PC945 2PC945K 2PC945P 2PC945Q 2PC1815 2PC1815BL 2PC1815GR bc109b datasheet BC337 BC547 bc237 bc546 bc108 TO-92 bc108b equivalent bc546 equivalent BC109B equivalent 2PC945K BC108 to92 2PC945P
2sc711 Abstract: 2SC871 2SC374 2SC2001L PA6013B 2SC631 2SC1684 R TBC338 LOW-POWER SILICON NPN PET4003 Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 704 V BR CEO hFE V} V(BR)CEO 5 Manufacturer HSE415 2SC870 2SC538 2SC539 A5T3391 A5T3391A A8T3391 A8T3391A MPS3391A MPS3391A 1 2SC368 BSY90 BSY90 TBC338A 2N3391	Original	PDF	HSE415 2SC870 2SC538 2SC539 A5T3391 A5T3391A A8T3391 A8T3391A MPS3391A 2sc711 2SC871 2SC374 2SC2001L PA6013B 2SC631 2SC1684 R TBC338 LOW-POWER SILICON NPN PET4003
BC109 pin configuration Abstract: BC109C pin configuration bc109 transistor BC109 BC109C BC109C datasheet DATASHEET Transistor BC109 BC109c transistor datasheet BC109B 30Hz Text: BC109 Series Low Power Bipolar Transistors Feature: • NPN Silicon Planar Epitaxial Transistors. TO-18 Metal Can Package Dimensions Minimum Maximum A 5.24 5.84 B 4.52 4.97 C 4.31 5.33 D 0.40 0.53 E - 0.76 F - 1.27 G - 2.97 H 0.91 1.17 J 0.71 1.21 K 12.70	Original	PDF	BC109 BC109 BC109 pin configuration BC109C pin configuration transistor BC109 BC109C BC109C datasheet DATASHEET Transistor BC109 BC109c transistor datasheet BC109B 30Hz
BC107 pin configuration Abstract: BC109 pin configuration BC109 BC109C pin configuration BC108 BC107 pin BC108 pin configuration bc107a pin out DATASHEET Transistor BC109 BC107 Text: BC107/ BC108/ BC109 Low Power Bipolar Transistors TO-18 Features: NPN Silicon Planar Epitaxial Transistors. Suitable for applications requiring low noise and good hFE linearity, eg. audio pre-amplifiers, and instrumentation. TO-18 Metal Can Package Dimension	Original	PDF	BC107/ BC108/ BC109 BC107 BC108 BC109 BC107 pin configuration BC109 pin configuration BC109C pin configuration BC107 pin BC108 pin configuration bc107a pin out DATASHEET Transistor BC109
bc109c Abstract: BC107 characteristic BC109C MOTOROLA bc108b BC107A TR BC c108b 109C Text: BC107, A, B thru BC109C M A XIM U M RATINGS Rating C o lle c to r-E m itte r V o lta g e Symbol BC 107 BC 108 BC 109C Unit v CEO 45 25 25 V dc C o lle c to r-B a s e V olta g e v CBO 50 30 30 Vdc E m itte r-B a s e V olta g e v EBO 6 5 5 C o lle c to r C u rre n t — C o n tin u o u s	OCR Scan	PDF	BC107, BC109C bc109c BC107 characteristic BC109C MOTOROLA bc108b BC107A TR BC c108b 109C
TRANSISTOR bc107 current gain Abstract: bc107a bc109 bc109c BC108B bc108a bc108c BC107B transistor TO-92 bc108 transistor bc107b Text: Philips Semiconductors Product specification NPN general purpose transistors BC107; BC108; BC109 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 45 V). 1 APPLICATIONS DESCRIPTION emitter 2 base 3 collector, connected to the case • General purpose switching and amplification.	OCR Scan	PDF	BC177. BC107; BC108; BC109 BC107 BC109 TRANSISTOR bc107 current gain bc107a bc109c BC108B bc108a bc108c BC107B transistor TO-92 bc108 transistor bc107b
Transistor BC109 Abstract: 8C109 BC109 applications of Transistor BC108 TRANSISTOR bc108 Transistor BC107 BC108 transistor BC107A BC107 bc109c Text: Datasheet 1 BC108,A,B,C BC1 0 9 , B, C BC 0 7 , A , B E O l l ll U ff H V w V lI l1 semiconductor Corp- NPN SI LI CON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 1 JEDEC T O - 8 CASE Manufacturers of World Class Discrete Semiconductors	OCR Scan	PDF	BC107 BC108 BC109 BC107, BC108, BC107A, BC108A) BC107B, BC108B, Transistor BC109 8C109 applications of Transistor BC108 TRANSISTOR bc108 Transistor BC107 BC108 transistor BC107A bc109c
BC140 equivalent Abstract: 2n3019 equivalent BC107 equivalent transistors bcy59 equivalent equivalent to BC177 BC141 equivalent 2n930 equivalent BC107 pnp equivalent bc109 equivalent BC160 equivalent Text: Discrete Devices Transistors Cont. European “Pro Electron” Types Type Near Equivalent Polarity Pkg. Type Near Equivalent Polarity Pkg. BC107 BC107A BC107B BC108 BC108A 2 N 2484 2N930 2N930 2 N 2484 2N930 NPN NPN NPN NPN NPN T O -18 T O -18 T O -18 T O -18	OCR Scan	PDF	BC107 2N2484 BC107A 2N930 BC107B BC108 BC108A BC140 equivalent 2n3019 equivalent BC107 equivalent transistors bcy59 equivalent equivalent to BC177 BC141 equivalent 2n930 equivalent BC107 pnp equivalent bc109 equivalent BC160 equivalent
BC548C Abstract: BC107A BC108A BC108b ZTX301 Text: SEM ICO N D U CTOR DICE NPN SMALL SIGNAL TRANSISTORS V CBO V CEO h FE ^CBO V CE sat! at Dice type Min. Min. Wax. at VCB VCE at lc Volts Volts nA Volts Min. Max. mA Volts Volts mA BC546A BC546B ZTX304 BCY65EA BC182 BC107A BC107B BC237 BC547A BC547B BC550B BC550C	OCR Scan	PDF	BC546A BC546B ZTX304 BCY65EA BC182 BC107A BC107B BC237 BC547A BC547B BC548C BC108A BC108b ZTX301

Untitled Abstract: No abstract text available Text: TO-18 Metal-Can Package Transistors NPN Electrical Characteristics (Ta=25'C, Unless Otherwise Specified) Maximum Ratings Type No. Pd (W) 0Tc=25°c ^C8Q (V) Min ^GEO ^EBO (V) Min (V) Min 2N915 70 50 5 0.36 2N916 45 25 5 0.36 2N929 45 45 5 0.5 ^CM *C80 ^C B	OCR Scan	PDF	2N915 2N916 2N929 2N930 BC109C BCY56 BCY57 BCY58 BCY58-10 BCY58-7
bc238 Abstract: No abstract text available Text: SbE 3> • ^70570 0DG7DM7 3 3 1 ■ Z E T B SEMICONDUCTOR DICE zetex semiconductors NPN SM ALL SIGNAL TRA N SISTO R S V CBO V CE0 hFE at •CBO Dice type Min. Min. Max. at V CB Volts Volts BC 546A BC546B ZTX304 BCY65EA BC182 BC 107A BC107B BC237 BC 547A BC547B	OCR Scan	PDF
BC107C Abstract: BC107 BC108A 2N915 bc109 BCY56 2N916 2N929 2N930 BC107A Text: an Package Transistors NPN Maximum Ratings Type No. Pd (W) Tc=25"c Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min 2N915 70 50 5' 0.36 2N916 45 25 5 0.36 0.2 2N929 45 45 5 0.5 0.03 (A) 'cM 'cBO (A)	OCR Scan	PDF	2N915 2N916 2N929 2N930 BC109C BCY56 BCY57 BCY58 BCYS8-10 BCY58-7 BC107C BC107 BC108A bc109 BC107A
BC108A Abstract: bc109 Text: BC107 to 109 _ A .F. SILICON PLANAR EPITAXIAL TRANSISTORS General purpose NPN transistors in TO-18 metal packages w ith the collector connected to the case. PNP com plem ents are BC177, BC178 and BC179. QUICK REFERENCE D ATA Collector-emitter voltage VgE = 0	OCR Scan	PDF	BC107 BC177, BC178 BC179. BC107A BC107B BC108C BC108A BC108B bc109
BC238 Abstract: BCY59A ZTX304 ZTX302 BC107A BC107B BC182 BC237 BC546A BC546B Text: SEMICONDUCTOR DICE NPN SMALL SIGNAL TRANSISTORS V CBO V CEO IcBO Min. Min. Max. at V CB Volts Volts BC 546A BC546B Z TX304 BC Y65EA BC182 BC 107A BC107B BC237 BC 547A BC547B BC550B BC550C B C Y59A BC Y59B BCY59C BCY59D 2N930 Z TX303 BC183 BC184 ZTX302 ZTX301	OCR Scan	PDF	BC546A BC546B ZTX304 BCY65EA BC182 BC107A BC107B BC237 BC547A BC548B BC238 BCY59A ZTX302
BC106B Abstract: BCI07A bc177 TO-92 BCI07B Text: DEVICE TYPE PACKAGE BVCEO BVCBO BVEBO C BO 9 VCB \|V> M IN \|V\| MIN VI MIN \|mAI M A X \|V> HFE @ VC & 1C MIN -M A X (V \|mA] COB FT (pi) MAX \|MHl\| NF Idbl MAX BC10> BCI07A BCI07B BC108 BC108A NPN NPN NPN NPN NPN TO-18 TO -18 TO -18 TO -18 TO-18 45 45 45 20 20	OCR Scan	PDF	BCI07A BCI07B BC108 BC108A BC106B BC109 BC109B BC109C BC168B BC168C BC106B bc177 TO-92
2N4007 Abstract: BC140 equivalent 2N4007 equivalent TRANSISTOR pnp BC140 TRANSISTOR BC140 BC141 equivalent 2N3060 BC179C TRANSISTOR BC109b bc108b equivalent Text: SPRAGUE Metal-Encased Silicon S E P T R Transistors HIGH-VOLTAGE VIDEO OUTPUT TRANSISTOR >- Type No. os < Pd T* = 25 C s V BR Ic B O CEO V o lts EBO V o lts iiA lc Watts CBO V olts Max. (m A) 1.0 300 250 7 ' Lim ts Con dition s V <BR) NPN 2N3440 D-C C U R R E N T G A I N ( h FE)	OCR Scan	PDF	2N3440 O-450 BC108A BC108B BC108C BC109B BC109C BC110 BC177A BC177B 2N4007 BC140 equivalent 2N4007 equivalent TRANSISTOR pnp BC140 TRANSISTOR BC140 BC141 equivalent 2N3060 BC179C TRANSISTOR BC109b bc108b equivalent
bcv59 Abstract: N705 bcv-59 ZTX301 Text: ’ ZETEX SEMICONDUCTORS IbE D • =1170570 000b675 0 ■ ZETB ' SEM IC O N D U C T O R DICE ELECTRICAL C H A RA C TERIST ICS NPN SM A LL SIGNAL TRA N SISTO R S Dice type- BC546A BC546B ZT X304 BCY65EA BC182 BC107A BC107B BC237 BC547A BC547B BC550B BC550C	OCR Scan	PDF	000b675 BC546A BC546B BCY65EA BC182 BC107A BC107B BC237 BC547A BC547B bcv59 N705 bcv-59 ZTX301
bc238 Abstract: ZTX304 ZTX108 BC107P BC182P BC212P BC546P BC547P BC556P BC557P Text: TABLE 1: NPN GENERAL PURPOSE The d e vice s s h o w n in this table are general p urpose tra n sisto rs d esigned for sm all signal am plification from d.c. to radio frequencies. Typical application areas include: A U D IO F R E Q U E N C Y A M P L IF IE R S , D R IV E R S and O U T P U T S T A G E S , O S C IL L A T O R S , A N D G E N E R A L	OCR Scan	PDF	BC546P BC556P ZTX304 ZTX504 BC182P BC212P ZTX107 ZTX212 BC547P BC557P bc238 ZTX108 BC107P BC212P BC556P BC557P
2n3019 equivalent Abstract: 2N3053 equivalent BC140 equivalent BC141 equivalent 2n930 equivalent bcy59 equivalent BC107 equivalent transistors 2N328A BC109C NPN bcy31 Text: Discrete Devices Transistors Cont. General Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N2897 NPN 2N2898 NPN NPN 2N2899 2N2900 2N3019 2N3020 2 N 3036 2N3053 NPN NPN NPN NPN NPN VCB Volts VCE	OCR Scan	PDF	2N2897 2N2898 2N2899 2N2900 2N3019 2N3020 2N3036 2N3053 2N329A BCY56 2n3019 equivalent 2N3053 equivalent BC140 equivalent BC141 equivalent 2n930 equivalent bcy59 equivalent BC107 equivalent transistors 2N328A BC109C NPN bcy31

BC109C NPN Search Results

BC109C NPN Result Highlights (5)

BC109C NPN Datasheets Context Search

MLED96

Untitled

bc108b

TRANSISTOR bc108

transistor BC107 specifications

bc109b datasheet

2sc711

BC109 pin configuration

BC107 pin configuration

bc109c

TRANSISTOR bc107 current gain

Transistor BC109

BC140 equivalent

BC548C

Untitled

bc238

BC107C

BC108A

BC238

BC106B

2N4007

bcv59

bc238

2n3019 equivalent