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    BC237 EQUIVALENT SMD Search Results

    BC237 EQUIVALENT SMD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    BC237 EQUIVALENT SMD Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    bc237 smd

    Abstract: microwave sensor microwave distance sensors ne 556 timer bc237 equivalent SMD microwave RADAR motion sensors microwave motion sensors motion sensor doppler motion sensor doppler effect motion DOPPLER
    Text: APPLICATIONS SENSORS Gerhard Lohninger Microwave sensor SMX-1: Opening doors by invisible hands Microwave sensors have two key advantages over other motion sensors: they are independent of temperature and can make direct use of the Doppler effect. The SMX-1 microwave sensor with its


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    bc238 equivalent

    Abstract: BC237 equivalent bc237 equivalent transistor bc237c equivalent NPN Transistor BC238B equivalent BC237 BC238 h parameter bc237 pin lay-out BC237 sot23 bc237v
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC237,A,B,C NPN Silicon BC238B,C BC239,C COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC237 BC238 BC239 Unit Collector – Emitter Voltage VCEO 45 25 25 Vdc Collector – Emitter Voltage


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    BC237 BC238B BC239 BC238 226AA) Re218A MSC1621T1 MSC2404 bc238 equivalent BC237 equivalent bc237 equivalent transistor bc237c equivalent NPN Transistor BC238B equivalent BC238 h parameter bc237 pin lay-out BC237 sot23 bc237v PDF

    MMBF4856

    Abstract: transistor equivalent 2n5551 BF245 application note MSC2404 MSC1621 74LS04 Fan Out 2n3819 equivalent transistor MMBF5486L bf245 equivalent MPS8093
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MDC3105LT1 Motorola Preferred Device Integrated Relay/Solenoid Driver • Optimized to Switch 3 V to 5 V Relays from a 5 V Rail • Compatible with “TX’’ and “TQ’’ Series Telecom Relays Rated up to


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    Automat218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 MMBF4856 transistor equivalent 2n5551 BF245 application note MSC1621 74LS04 Fan Out 2n3819 equivalent transistor MMBF5486L bf245 equivalent MPS8093 PDF

    transistor equivalent 2n5551

    Abstract: bf245 equivalent EQUIVALENT TRANSISTOR bc109c transistor equivalent CT 2n5551 BC237 bc238 equivalent tr bc547 BF422 EQUIVALENT Motorola FETS 3000 series part numbers MPS2369 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes 1N5446ARL 1N5448ARL 1N5456A These are epitaxial passivated abrupt junction tuning diodes designed for electronic tuning, FM, AFC and harmonic–generation applications in AM through UHF ranges, providing solid–state reliability to replace mechanical tuning methods.


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    1N5446ARL 1N5448ARL 1N5456A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 transistor equivalent 2n5551 bf245 equivalent EQUIVALENT TRANSISTOR bc109c transistor equivalent CT 2n5551 BC237 bc238 equivalent tr bc547 BF422 EQUIVALENT Motorola FETS 3000 series part numbers MPS2369 equivalent PDF

    MPSa06 equivalent

    Abstract: MPSA42 equivalent bf245 equivalent 2N5087 equivalent BC237 bf245a equivalent equivalent components of transistor bc107 2N2222A motorola MPSa56 equivalent EQUIVALENT TRANSISTOR bc109c
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Switching Diode BAS16WT1 Motorola Preferred Device 3 CATHODE 1 ANODE 3 MAXIMUM RATINGS TA = 25°C Symbol Max Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IR 200 mA IFM(surge) 500 mA


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    BAS16WT1 70/SOT RJ218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MPSa06 equivalent MPSA42 equivalent bf245 equivalent 2N5087 equivalent BC237 bf245a equivalent equivalent components of transistor bc107 2N2222A motorola MPSa56 equivalent EQUIVALENT TRANSISTOR bc109c PDF

    2N643

    Abstract: BC237 MARKING DP SOT-363 DO204AA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair


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    MMBD1010LT1 MMBD2010T1 MMBD3010T1 MMBD1010LT1 S218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 2N643 BC237 MARKING DP SOT-363 DO204AA PDF

    BC237

    Abstract: MMBD2005T1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair


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    MMBD1005LT1 MMBD2005T1 MMBD3005T1 MMBD1005LT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237 PDF

    BC237

    Abstract: MPSA06 346
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste


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    MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 MMBD1000LT1 OT-23 O-236AB) V218A MSC1621T1 MSC2404 BC237 MPSA06 346 PDF

    transistor equivalent CT 2n5551

    Abstract: EQUIVALENT TRANSISTOR bc109c BC237 BC238 h parameter 1N5148
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes 1N5148 1N5148A Designed for electronic tuning and harmonic–generation applications, and provide solid–state reliability to replace mechanical tuning methods. • Guaranteed High–Frequency Q


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    1N5148 1N5148A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 transistor equivalent CT 2n5551 EQUIVALENT TRANSISTOR bc109c BC237 BC238 h parameter PDF

    transistor equivalent 2n5551

    Abstract: bf245 equivalent transistor equivalent book 2N5401 J-FET 2N3819 MMBF4856LT1 MIL-STD-750 method 1037 BC237 2N5551 equivalent MPS3640 equivalent MOTOROLA 2n2222 TRANSISTOR
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET General Purpose Transistor P–Channel MMBF5460LT1 2 SOURCE 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating Symbol Value Unit VDG 40 Vdc VGSR 40 Vdc IGF 10 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board 1 TA = 25°C


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    MMBF5460LT1 236AB) CHARACTERIS218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 transistor equivalent 2n5551 bf245 equivalent transistor equivalent book 2N5401 J-FET 2N3819 MMBF4856LT1 MIL-STD-750 method 1037 BC237 2N5551 equivalent MPS3640 equivalent MOTOROLA 2n2222 TRANSISTOR PDF

    2n1613 equivalent

    Abstract: BC237 diode l 0607
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAV99WT1 BAV99RWT1 SC-70/SOT-323 Dual Series Switching Diode Motorola Preferred Devices The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Suggested Applications • ESD Protection • Polarity Reversal Protection


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    SC-70/SOT-323 BAV99WT1 BAV99LT1. BAV99RWT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 2n1613 equivalent BC237 diode l 0607 PDF

    MMBF4856

    Abstract: BC237 bf244 BC177 pnp transistor BF245 motorola MMBT8599L
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Amplifier Switching Transistor MPQ3906 PNP Silicon Motorola Preferred Device 14 13 12 11 10 9 8 5 6 7 PNP 1 2 3 4 MAXIMUM RATINGS 14 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Collector – Base Voltage


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    MPQ3906 Therm218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MMBF4856 BC237 bf244 BC177 pnp transistor BF245 motorola MMBT8599L PDF

    2n5462 replacement

    Abstract: motorola JFET 2N3819 bf245 equivalent transistor equivalent 2n5551 2N5461 replacement transistor equivalent book 2N5401 BC237 EQUIVALENT TRANSISTOR bc109c 2N2222, 2N2222A J-FET 2N3819
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Amplifiers P–Channel — Depletion 2N5460 2N5461 2N5462 2 DRAIN 3 GATE 1 SOURCE MAXIMUM RATINGS Rating Drain – Gate Voltage Symbol Value Unit VDG 40 Vdc VGSR 40 Vdc IG f 10 mAdc Total Device Dissipation @ TA = 25°C


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    2N5460 2N5461 2N5462 226AA) V218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 2n5462 replacement motorola JFET 2N3819 bf245 equivalent transistor equivalent 2n5551 2N5461 replacement transistor equivalent book 2N5401 BC237 EQUIVALENT TRANSISTOR bc109c 2N2222, 2N2222A J-FET 2N3819 PDF

    2n3819 replacement

    Abstract: transistor equivalent book 2N5401 BC237 MPS918 equivalent mps2907 replacement 2n3819 equivalent transistor bf245 replacement 2N5551 SOT-23 transistor equivalent CT 2n5551 j305 replacement
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes These devices are designed in the popular PLASTIC PACKAGE for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications.They provide solid–state reliability in replacement of mechanical


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    MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2108LT1 MMBV2109LT1 MV2101 MV2104 MV2105 MV2108 2n3819 replacement transistor equivalent book 2N5401 BC237 MPS918 equivalent mps2907 replacement 2n3819 equivalent transistor bf245 replacement 2N5551 SOT-23 transistor equivalent CT 2n5551 j305 replacement PDF

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r


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    MMBFJ175LT1 236AB) Ga218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237 PDF

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10


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    MMBFJ177LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 PDF

    BC237

    Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.


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    MGSF3455XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 MARKING CODE diode sod123 W1 K 2056 transistor PDF

    marking code 5a sot-363

    Abstract: BC237
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Diode MMBD6050LT1 3 3 CATHODE 1 ANODE 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board(1)


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    MMBD6050LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 marking code 5a sot-363 BC237 PDF

    BF245 application note

    Abstract: BC237 alternative bipolar transistors book MPS2369 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Chopper Transistor MPS404A PNP Silicon COLLECTOR 3 Motorola Preferred Device 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –35 Vdc Collector – Base Voltage VCBO –40


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    MPS404A 226AA) Symbol218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BF245 application note BC237 alternative bipolar transistors book MPS2369 equivalent PDF

    BC237

    Abstract: MPS9
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Switching Diode BAW56WT1 Motorola Preferred Device CATHODE 1 3 ANODE 2 3 MAXIMUM RATINGS TA = 25°C Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board(1)


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    BAW56WT1 70/SOT MA218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 MPS9 PDF

    BC237

    Abstract: DUAL GENERAL PURPOSE TRANSISTORS marking code D3 SOT23 component marking code mt
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual Switching Diode M1MA141WKT1 M1MA142WKT1 This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package


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    M1MA141/2WKT1 inch/3000 M1MA141/2WKT3 inch/10 M1MA141WKT1 M1MA142WKT1 70/SOT M1218A MSC1621T1 BC237 DUAL GENERAL PURPOSE TRANSISTORS marking code D3 SOT23 component marking code mt PDF

    2N16

    Abstract: BC237 BCY72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.


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    MGSF1P02ELT1 L218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2N16 BC237 BCY72 PDF

    2n2222 h 331 transistors

    Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.


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    MGSF3442XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2n2222 h 331 transistors 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1 PDF

    motorola JFET 2N3819

    Abstract: C4 SOT-323 equivalent transistor 2N1711 mvm010 marking code C5 sot23 BC237 JFET 2N3819 MOTOROLA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifier Transistor N–Channel MMBFJ309LT1 MMBFJ310LT1 2 SOURCE 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc IG 10 mAdc Gate Current


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    MMBFJ309LT1 MMBFJ310LT1 236AB) MMBFJ309LT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 motorola JFET 2N3819 C4 SOT-323 equivalent transistor 2N1711 mvm010 marking code C5 sot23 BC237 JFET 2N3819 MOTOROLA PDF