Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BC238B PARAMETER Search Results

    BC238B PARAMETER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC239C

    Abstract: BC237 BC238B DATASHEET Transistor BC239c 238b BC238 datasheet BC239C equivalent BC237A BC238 BC239
    Text: ON Semiconductort BC237,A,B,C BC238B,C BC239C Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC237 BC238 BC239 Unit Collector–Emitter Voltage VCEO 45 25 25 Vdc Collector–Emitter Voltage VCES 50 30 30 Vdc Emitter–Base Voltage VEBO 6.0


    Original     		PDF BC237 BC238B BC239C BC237 BC238 BC239 r14525 BC237/D BC239C DATASHEET Transistor BC239c 238b BC238 datasheet BC239C equivalent BC237A BC238 BC239

    BC237

    Abstract: BC238B BC238 datasheet BC238B npn Bc238B, NPN BC239 NPN transistor download datasheet BC237A BC238 BC239 BC237B/2388/2398
    Text: BC237,A,B,C BC238B,C BC239,C Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC237 BC238 BC239 Unit Collector–Emitter Voltage VCEO 45 25 25 Vdc Collector–Emitter Voltage VCES 50 30 30 Vdc Emitter–Base Voltage VEBO 6.0 5.0 5.0 Vdc Collector Current — Continuous


    Original     		PDF BC237 BC238B BC239 BC237 BC238 BC239 r14525 BC237/D BC238 datasheet BC238B npn Bc238B, NPN BC239 NPN transistor download datasheet BC237A BC238 BC237B/2388/2398

    bc238 equivalent

    Abstract: BC237 equivalent bc237 equivalent transistor bc237c equivalent NPN Transistor BC238B equivalent BC237 BC238 h parameter bc237 pin lay-out BC237 sot23 bc237v
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC237,A,B,C NPN Silicon BC238B,C BC239,C COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC237 BC238 BC239 Unit Collector – Emitter Voltage VCEO 45 25 25 Vdc Collector – Emitter Voltage


    Original     		PDF BC237 BC238B BC239 BC238 226AA) Re218A MSC1621T1 MSC2404 bc238 equivalent BC237 equivalent bc237 equivalent transistor bc237c equivalent NPN Transistor BC238B equivalent BC238 h parameter bc237 pin lay-out BC237 sot23 bc237v

    BC238B

    Abstract: BC237 BC239 BC238 MOTOROLA transistor bc237 BC238 datasheet BC237A BC238 bc237 motorola BC238B MOTOROLA
    Text: MOTOROLA Order this document by BC237/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC237,A,B,C NPN Silicon BC238B,C BC239,C COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 237 BC 238 BC 239 Unit Collector – Emitter Voltage VCEO 45 25 25


    Original     		PDF BC237/D BC237 BC238B BC239 BC237/D* BC238 MOTOROLA transistor bc237 BC238 datasheet BC237A BC238 bc237 motorola BC238B MOTOROLA

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r


    Original     		PDF MMBFJ175LT1 236AB) Ga218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237

    2N643

    Abstract: BC237 MARKING DP SOT-363 DO204AA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair


    Original     		PDF MMBD1010LT1 MMBD2010T1 MMBD3010T1 MMBD1010LT1 S218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 2N643 BC237 MARKING DP SOT-363 DO204AA

    BC237

    Abstract: MMBD2005T1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair


    Original     		PDF MMBD1005LT1 MMBD2005T1 MMBD3005T1 MMBD1005LT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237

    BC237

    Abstract: MARKING CODE diode sod123 W1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.


    Original     		PDF MGSF3441XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 MARKING CODE diode sod123 W1

    2N16

    Abstract: BC237 BCY72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.


    Original     		PDF MGSF1P02ELT1 L218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2N16 BC237 BCY72

    2n2222 h 331 transistors

    Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.


    Original     		PDF MGSF3442XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2n2222 h 331 transistors 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10


    Original     		PDF MMBFJ177LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237

    BC237

    Abstract: MPSA06 346
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste


    Original     		PDF MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 MMBD1000LT1 OT-23 O-236AB) V218A MSC1621T1 MSC2404 BC237 MPSA06 346

    BC237

    Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.


    Original     		PDF MGSF3455XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 MARKING CODE diode sod123 W1 K 2056 transistor

    MMBF4856

    Abstract: transistor equivalent 2n5551 BF245 application note MSC2404 MSC1621 74LS04 Fan Out 2n3819 equivalent transistor MMBF5486L bf245 equivalent MPS8093
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MDC3105LT1 Motorola Preferred Device Integrated Relay/Solenoid Driver • Optimized to Switch 3 V to 5 V Relays from a 5 V Rail • Compatible with “TX’’ and “TQ’’ Series Telecom Relays Rated up to


    Original     		PDF Automat218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 MMBF4856 transistor equivalent 2n5551 BF245 application note MSC1621 74LS04 Fan Out 2n3819 equivalent transistor MMBF5486L bf245 equivalent MPS8093

    MIL-STD-750 method 1037

    Abstract: BC237 BF245 MPF4856
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SOD-123 Schottky Barrier Diodes MMSD301T1 MMSD701T1 The MMSD301T1, and MMSD701T1 devices are spin–offs of our popular MMBD301LT1, and MMBD701LT1 SOT–23 devices. They are designed for high–efficiency UHF and VHF detector applications. Readily available to many other


    Original     		PDF OD-123 MMSD301T1, MMSD701T1 MMBD301LT1, MMBD701LT1 MMSD301T1 MMSD701T1 m218A MIL-STD-750 method 1037 BC237 BF245 MPF4856

    BC237

    Abstract: Fet BF245
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN0300L 3 DRAIN Motorola Preferred Device 2 GATE  1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 60 V Drain – Gate Voltage VDGR 60 V


    Original     		PDF VN0300L 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 Fet BF245

    BC238B

    Abstract: BC239 BC237A BC238 BC237 bc237v
    Text: MOTOROLA Order this document by BC237/D SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors BC237,A,B,C BC238B,C BC239,C NPN Silicon COLLECTOR 1 EMITTER MAXIMUM RATINGS Rating C o lle c to r-E m itte r Voltage Symbol BC 237 BC 238 BC 239 Unit VCEO 45 25 25


    OCR Scan     		PDF BC237/D BC237 BC238B BC239 O-226AA) BC237A BC238 bc237v

    SL 100 NPN Transistor

    Abstract: bc337-40 npn transistor transistor TE 901 Transistor BC239c SL 100 power transistor of transistor sl 100 Transistor BC413C TRANSISTOR SL 100 te 901 pnp Transistor sl 100 transistor
    Text: SPRAGUE SILICON TRANSISTOR AND DIODE CHIPS POPULAR TRANSISTOR AND DIODE CHIPS ELECTRICAL CHARACTERISTICS 100% Probed Parameters BVcbo TYPE D ESCRIPTIO N Min. Volts lc @ (mA) BVceo Min. Ic V o lts @ (mA) BVeëq Min. lc Volts @ (mA) Min. Max. lc (mA) .01 tlfE


    OCR Scan     		PDF THC-2484 THC-4123 THC-4124 THC-4125 THC-4126 THC-40D4 THC-40D5 THC-41D4 THC-41D5 SL 100 NPN Transistor bc337-40 npn transistor transistor TE 901 Transistor BC239c SL 100 power transistor of transistor sl 100 Transistor BC413C TRANSISTOR SL 100 te 901 pnp Transistor sl 100 transistor

    BCY58C

    Abstract: bc547b ferranti BCY59A bcy59b 2N3903 2N3904 BC107A BC107B BC182 BC237A
    Text: ELECTRICAL CHARACTERISTICS N.P.N. SM ALL SIG N AL TR A N SISTO RS hFE VcBO V ceo ICBO @ Min. Min. Max.atVcs lc Dice Type V V nA V Min. Max. mA BC546A BC546B BCY65EA BC182 2N3903 2N3904 BC107A BC107B BC237A BC237B BC547A BC547B BC550B BC550C BCY59A BCY59B BCY59C


    OCR Scan     		PDF BC546A BC546B BCY65EA BC182 2N3903 2N3904 BC107A BC107B BC237A BC237B BCY58C bc547b ferranti BCY59A bcy59b

    NPN Transistor BC548B

    Abstract: transistor bc238b TP2369A t092 transistor pro-electron BCS48
    Text: SPRAGUE/SEMICOND GROUP 14E D • T -U 'O I ÖS13ÖS0 □ □□ 47ei4 4 ■ SPRAGUE PROELECTRON T092 TRANSISTOR TYPES» PROELECTRON T092 TRANSISTOR TYPES Typ« No. Polarity Chip Process BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB BC212LA


    OCR Scan     		PDF BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB BC212LA NPN Transistor BC548B transistor bc238b TP2369A t092 transistor pro-electron BCS48

    NPN Transistor BC548B

    Abstract: BC548 BC238B npn bc337-40 npn transistor
    Text: ALLEGRO MICROSYSTEMS INC 14 D • 0504330 00047^4 3 ■ ALGR T~^9-0| SPRAGUE PROELECTRON T092J TRANSISTOR TYPES»! PROELECTRON T092 TRANSISTOR TYPES Typ« No. Polarity Chip Process BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB BC212LA BC212LB


    OCR Scan     		PDF T092J BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB NPN Transistor BC548B BC548 BC238B npn bc337-40 npn transistor

    BC239C equivalent

    Abstract: BC550C equivalent bc237a equivalent bc238b equivalent BC548C equivalent bc238a equivalent bc108b equivalent bc549c equivalent bc183 equivalent BC237B equivalent
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A BC239C equivalent BC550C equivalent bc237a equivalent bc238b equivalent BC548C equivalent bc238a equivalent bc108b equivalent bc549c equivalent bc183 equivalent BC237B equivalent

    BC238B

    Abstract: BC547B bcy58 ZT Ferranti 2N1131 2N1132 2N3053 2N4037 2N696 2N697
    Text: NPN LOW LEVEL 2N3053 Max VcE sat at V ceO U 'C: < Type o< CD Max V mA V mA mA 60 40 700 1.4 150 15 2N696 60 40 2N697 60 40 BFY51 60 30 !c Ib h FE Min. Max. 50 250 at Continued Min f T at Pto, at Tamb Package Comple­ ment = 25°C lc !c mW mA MHz mA 150 100


    OCR Scan     		PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 BC238B BC547B bcy58 ZT Ferranti 2N1131 2N1132 2N4037

    bcy58

    Abstract: BFS98 BC546P BC556P BFS61 MPSA06 MPSA56 ZTX451 ZTX452 ZTX453
    Text: TABLE 1 : NPN GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include: A U D IO FREQ UENCY A M P LIF IER S, D R IV E R S and O U TPU T ST A G E S , O SC IL L A T O R S, A N D G EN ERA L PU RP O SE


    OCR Scan     		PDF ZTX453 ZTX452 ZTX552 MPSA06 MPSA56 BC546P BC556P ZTX451 BC108A BC108B bcy58 BFS98 BC556P BFS61 MPSA56