Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by BC807-16LT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors PNP Silicon COLLECTOR 3 BC807-16LT1 BC807-25LT1 BC807-40LT1 1 base " 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit C o lle c to r-E m itte r Voltage
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BC807-16LT1/D
BC807-16LT1
BC807-25LT1
BC807-40LT1
-236A
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bc807
Abstract: BC808 BC807-16 BC807-25 BC807-40 BC808-16 BC808-25 BC808-40 BC807B
Text: BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistor M arking BC807 = 5D BC807-16 = 5A BC807-25 = 5B BC807-40 = 5C BC808 = 5H BC808-16 = 5E BC808-25 = 5F BC808-40 = 5G PACKAGE OUTLINE DETAILS ALL DIM ENSIONS IN m m _3.0_ 2.8 0.14 0.09 0.48 0.38
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BC807
BC808
BC807
BC807-16
BC807-25
BC807-40
BC808-16
BC808-25
BC808-40
BC808
BC807-16
BC807-25
BC807-40
BC808-16
BC808-25
BC808-40
BC807B
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Untitled
Abstract: No abstract text available
Text: BC807 BC808 HL SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistor M arking P A C K A G E O U T L IN E D E T A IL S A L L D IM E N S IO N S IN m m BC807 = 5D BC807-16 = 5A BC807-25 « 5B BC807-40 = 5C BC808 = 5H BC808-16 = 5E BC808-25 = 5F BC808-40 = 5G
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BC807
BC808
BC807
BC807-16
BC807-25
BC807-40
BC808-16
BC808-25
BC808-40
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Untitled
Abstract: No abstract text available
Text: BC807 BC808 SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 4 - J U N E 1996 I PARTM ARKING DETAILS BC807 - 5DZ BC808 c jp E - 5HZ BC807-16 - 5AZ BC808-16 - 5EZ B C 8 0 7 -2 5 -5 B Z BC808-25 - 5FZ BC807-40 - 5CZ BC808-40 - 5GZ B CO M PLEM ENTARY TYPES
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BC807
BC808
BC807-16
BC807-40
BC808-16
BC808-25
BC808-40
BC808
BC817
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BC807-40LT1
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors PNP Silicon COLLECTOR 3 BC807-16LT1 BC807-25LT1 BC807-40LT1 1 % EMITTER 1 jW 2 MAXIMUM RATINGS Rating Symbol Value C o llecto r- Emitter Voltage VCEO -4 5 V C ollector-B ase Voltage VCBO -5 0
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BC807-16LT1
BC807-25LT1
BC807-40LT1
O-236AB)
BC807-40LT1
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BC807-40LT1
Abstract: marking KD SOT23
Text: MAXIMUM RATINGS Rating Collector-Em itter V oltage Symbol Value Unit v CEO -4 5 V C ollector-Base V oltage VCBO -5 0 V Em itter-Base V oltage v EBO -5 .0 V 'c - 500 m Adc Collector Current — C o n tin u o u s BC807-16LT1 BC807-25LT1 BC807-40LT1 CASE 318-07, STYLE 6
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BC807-16LT1
BC807-25LT1
BC807-40LT1
OT-23
O-236AB)
BC807-25
BC807-40
BC807-40LT1
marking KD SOT23
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Untitled
Abstract: No abstract text available
Text: BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistor M ark in g P A C K A G E O U T L IN E D E T A IL S BC807 = 5D A L L D IM E N S IO N S IN m m B C 8 0 7 -1 6 - 5A B C 807-25 * 5B BC807-40 = 5C 3.0 BCB08 - 5H 2.8 0.48 B C 808-16 - 5E B C 808-25 = 5F
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BC807
BC808
BC807-40
BCB08
8C808
BC807;
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Untitled
Abstract: No abstract text available
Text: : S v î^ S e m i ; SOT -23 Plastic Encapsulate Transistors 5YM5EMI SEMICONDUCTOR BC807 -16LT1 BC807 -25LT1 BC8 0 7 -40LT1 TRANSISTOR SOT — 23 1. BASE 2. EMI H E R 3. COLLECTOR FEATURES Power dissipation 0.3 Pcm Collector current 1 cm : PNP W -0 .5 (Tamb=25 °C)
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BC807
-16LT1
-25LT1
-40LT1
-10mA
OT-23
950TPY
037TPY
550REF
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BC807-16
Abstract: BC807-25 BC807-40 BC817
Text: BC807-16/ -25/ -40 PNP SURFACE MOUNT TRANSISTOR Features 310 mW Power Dissipation Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier Applications Complementary NPN Types Available BC817 SOT-23
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BC807-16/
BC817)
OT-23,
MIL-STD-202,
BC807-16
BC807-25
BC807-40
DS11208
BC807-16/-25/-40
BC817
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transistor af 178
Abstract: BC807 BC817-16 BC817-25 BC817-40 MC9100
Text: BC817-16 / -25 / -40 NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features 310 mW Power Dissipation Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier Applications Complementary PNP Types Available BC807
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BC817-16
BC807)
OT-23,
MIL-STD-202,
BC817-25
BC817-40
DS11107
BC817-16/-25/-40
transistor af 178
BC807
MC9100
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Bc807SOT-23
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Feb 28 Philips Sem iconductors 1999 Apr 08 PHILIPS Philips Semiconductors Product specification PNP general purpose transistor BC807 FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max. 45 V).
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BC807
BC817.
MAM256
115002/00/03/pp8
Bc807SOT-23
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s2kj
Abstract: BC807 BC807-16 BC807-25 BC807-40 BC817 CDV1000
Text: BC807 -16/ -25/ -40 VISHAY PNP SURFACE MOUNT TRANSISTORS /Li T E M I ri / POWERSEMICONDUCTOR I Features 310 mW Power Dissipation Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier Applications Complementary NPN Types Available BC817
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BC807
BC817)
OT-23,
MIL-STD-202,
BC807-16
BC807-25
BC807-40
OT-23
DS11208
BC807-16/-25/-40
s2kj
BC817
CDV1000
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Untitled
Abstract: No abstract text available
Text: BC807 -16/ -25/ -40 VISHAY PNP SURFACE MOUNT TRANSISTORS /uTE M ir I POWER SEMICONDUCTOR J Features 310 mW Power Dissipation Ideally Suited tor Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplitier Applications Complementary NPN Types Available BC817)
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BC807
BC817)
OT-23,
MIL-STD-202,
BC807-16
BC807-25
BC807-40
OT-23
DS11208
BC807-16/-25/-40
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C5 MARKING TRANSISTOR
Abstract: BC807 BC808 marking code 9FB marking 9fb 9fb transistor
Text: PNP EPITAXIAL SILICON TRANSISTOR BC807/BC808 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for A F-D river stages and low pow er output stages • C om plem ent to B C 817/BC 818 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollecto r E m itter Voltage
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BC807/BC808
BC817/BC818
BC807
BC808
OT-23
-10mA,
C5 MARKING TRANSISTOR
BC808
marking code 9FB
marking 9fb
9fb transistor
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Untitled
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON TRANSISTOR BC807/BC808 SWITCHING AND AMPLIFIER APPLICATIONS S O T-23 • Suitable fo r A F-D river stages and low pow er output stages • C om plem ent to BC817/BC 818 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol C ollector Em itter Voltage
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BC807/BC808
BC817/BC
BC807
BC808
BC808
BC807
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marking 8fb
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR BC817/BC818 S O T-23 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable fo r A F-D river stages and low pow er output stages • C om plem ent to BC807/BC 808 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollector Em itter V oltage
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BC817/BC818
BC807/BC
BC817
BC818
25product
marking 8fb
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Untitled
Abstract: No abstract text available
Text: BC807 BC808 _ SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a SOT-23 plastic package fo r use in driver and ou tp u t stages o f aufio amplifiers in thick and thin -film hybrid circuits. N-P-N complements are BC817; R and BC818; R respectively.
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BC807
BC808
OT-23
BC817;
BC818;
BC807-16
BC808-16
BC807-25
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marking code 6Cp
Abstract: code marking 6Cp sot-23 BC817B 817b
Text: J B C 817 B C 818 K. SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a SOT-23 plastic package fo r use in driver and ou tput stages o f audio amplifiers in thick and thin -film hybrid circuits. P-N-P complements are BC807; R and BC808; R respectively.
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OT-23
BC807;
BC808;
BC817
BC818
BC817-16
BC818-16
BC817-25
BC818-25
BC817-40
marking code 6Cp
code marking 6Cp sot-23
BC817B
817b
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code marking 5Cp sot-23
Abstract: bc807 BC807-16 BC807-25 BC807-40 BC808 BC808-16 BC808-25 BC817 BC818
Text: • bbSB^ai □□2443’ì D7T M A R X N AUER PHILIPS/DISCRETE BC807 BC808 b7E J> SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a SOT-23 plastic package fo r use in driver and ou tput stages o f aufio amplifiers in th ick and th ln -film hybrid circuits.
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BC807
BC808
OT-23
BC817;
BC818;
OT-23.
35MHz
code marking 5Cp sot-23
bc807
BC807-16
BC807-25
BC807-40
BC808
BC808-16
BC808-25
BC817
BC818
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BC817C
Abstract: BC818C BC808R 6dp sot-23 bc818r
Text: BC817 BC818 SILICON PLANAR EPITAXIAL TR A NSISTO R S N-P-N transistors, in a SOT-23 plastic package fo r use in d river and o u tp u t stages o f audio a m plifiers in th ic k and th in -film h y b rid circu its. P-N-P com plem ents are BC807; R and BC808; R respectively.
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BC817
BC818
OT-23
BC807;
BC808;
BC818
OT-23.
BC817;
BC817C
BC818C
BC808R
6dp sot-23
bc818r
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BC807C
Abstract: No abstract text available
Text: BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, In a SO T-23 plastic package fo r use in d rive r and o u tp u t stages o f audio am p lifie rs in th ic k and th in -film h y b rid circuits. N-P-N com plem ents are BC817, R and BC818; R respectively.
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BC807
BC808
BC817,
BC818;
BC808
BC807;
BC807-16
BC808-16
BC807C
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marking code va transistors
Abstract: BC807 BC808 sot-23 Marking sj
Text: BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS SOT-23 • SUITABLE FO R A F D R IV E R S T A G E S AN D LOW PO W ER O U TPU T S TA G E S • Com plem en t to BC817/BC818 ABSOLUTE MAXIMUM RATINGS Ta = 25°C C h a ra c te r is tic
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BC807/BC808
BC817/BC818
BC807
BC808
OT-23
BC807
002S0bli
marking code va transistors
BC808
sot-23 Marking sj
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PDF
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lt 8227
Abstract: No abstract text available
Text: Page Products S p e c if ic a t io n SST / SOT-23 BC807 Type F D '.'514-807 1. B C 8 SCOPE 1 .1 07 T h is s p e c i f i c a t io n co v e rs the d e t a i l re q u irem e n ts one type P N P ¡s ilic o n e p it a x i a l p la n a r t r a n s is t o r fo r
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OT-23
BC807
ig-8227
BC807-16
BC807-25
lt 8227
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PDF
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Untitled
Abstract: No abstract text available
Text: SOT23 NPN SIUCON PLANAR MEDIUM POWER TRANSISTORS ISSUE 4 -¡u n e 1996_ O _ PAR TM ARKING DETAILS BC817 -6 D Z BC818 - 6HZ B C 8 1 7 -1 6 -6 A Z BC818-16 - 6EZ BC817-25 - 6BZ BC818-25 - 6FZ BC817-40 - 6CZ BC818-40 - 6GZ C O M PLEM ENTAR Y TYPES
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BC817
BC818
BC817-25
BC817-40
BC807
BC808
BC818-16
BC818-25
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