Contextual Info: BCP5616Q 80V NPN MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Medium Power Switching or Amplification Applications 

BCP5616

Contextual Info: Not Recommended for New Design Alternative is BCP56 & BCP5616 DCP56/-16 NPN SURFACE MOUNT TRANSISTOR Features • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available DCP53 Ideally Suited for Automated Assembly Processes

BM sot223 marking code

Contextual Info: BCP56-16 LOW POWER NPN TRANSISTOR • ■ ■ ■ Ordering Code Marking BCP56-16 BCP5616 SILICON EPITAXIAL PLANAR NPN MEDIUM VOLTAGE TRANSISTOR SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPE IS BCP53-16

BCP56

Abstract: bcp55 BCP5616 BCP5516 BCP56-16 bcp55 to BCP52-16 BCP53-16 BCP55-16 MARKING BCP56
Contextual Info: BCP55-16 BCP56-16 SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA • ■ ■ ■ Type Marking BCP55-16 BCP5516 BCP56-16 BCP5616 SILICON EPITAXIAL PLANAR PNP MEDIUM VOLTAGE TRANSISTORS SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING

BCP5616

Abstract: STMicroelectronics marking code BCP53 bcp53 SOT-223 BCP56-16 BCP53-16 "NPN Transistor" transistor bcp56 MARKING BCP56
Contextual Info: BCP56-16 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Ordering Code Marking BCP56-16 BCP5616 SILICON EPITAXIAL PLANAR PNP MEDIUM VOLTAGE TRANSISTORS SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPE IS

transistor 2N3906 smd 2A SOT23

Abstract: 2n3904 TRANSISTOR REPLACEMENT GUIDE BC327-40 SMD bc107 TRANSISTOR SMD CODE PACKAGE SOT23 TRANSISTOR BC337-25 PNP BC548 TRANSISTOR REPLACEMENT BC327-25 SMD TRANSISTOR BC337 SMD 2n3906 REPLACEMENT MMBT3094
Contextual Info: Small Signal Transistors Industry Standard BF722 BF723 BFN38 CZTA42 CZTA92 KSA539 KSA643 KSA733 KSC1623 KSC815 MMBT3094 MMBT3906 MMBT4401 MMBT4403 MMBTA42 ST Nearest ST Replacement Industry Standard BF720 BF721 BF720 STZTA42 STZTA92 MMBTA92 MPSA42 MPSA92 MSB709

Contextual Info: BCP54,55,56 NPN Silicon Transistor Power amplifier application Elektronische Bauelemente RoHS Compliant Product B C   E f C f   f SOT-223 f 5 5  fe e fe e  f  fe e  1 2 3 MAXIMUM RATINGS* TA=25Я unless otherwise noted

MPC5602

Abstract: MPC5603 mpc5604 MPC5603P pcrc-11 Freescale SafeAssure IEC Compliance MPC5604P Permanent Magnet brushless AC CRC-16-CCIT airbag
Contextual Info: Freescale Semiconductor Data Sheet: Technical Data Document Number: MPC5604P Rev. 8, 07/2012 MPC5604P 144 LQFP 20 mm x 20 mm 100 LQFP 14 mm x 14 mm Qorivva MPC5604P Microcontroller Data Sheet • • • • • • • • Up to 64 MHz, single issue, 32-bit CPU core complex

smd transistor js

Abstract: smd transistor bcp56 transistor bcp56 bcp55 bcp54 smd transistor BCP54 bcp55 to BCP56 bcp55 sot BCP54-10
Contextual Info: Transistors SMD Type NPN Medium Power Transistor BCP54; BCP55; BCP56 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 High collector current +0.1 3.00-0.1 1.3 W power dissipation. +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2 Features +0.2 0.90-0.2 +0.3 7.00-0.3 4 1

dimmable LED driver

Abstract: RC1206FR-07100RL SSL4120T
Contextual Info: UM10722 SSL4120DB1123 - 90 W 1.9 A CC dimmable isolated LED driver demo board Rev. 1 — 28 August 2013 User manual Document information Info Content Keywords SSL4120T, LED driver, dimmable, isolated, demo board, power factor corrector, PFC, resonant, LLC, burst mode

TRANSISTOR bH-16

Abstract: onsemi SOT-223 16T1 BCP53T1 BCP56 BCP56T1 BCP56T3 marking BH-10
Contextual Info: BCP56T1 Series Preferred Devices NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications.

marking BH SOT-223

Abstract: motorola transistor dpak marking motorola bh BCP53T1 BCP56-10T1 BCP56-16T1 BCP56T1 BCP56T3 SMD310
Contextual Info: MOTOROLA Order this document by BCP56T1/D SEMICONDUCTOR TECHNICAL DATA BCP56T1 SERIES NPN Silicon Epitaxial Transistor Motorola Preferred Device These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for

BF963

Abstract: 1N4004 SOD-123 BC547 smd BB409 2n2907 smd BAT16-046 1N4148 2N2907 SOT-23 1N4148 SOD-123 2n2222 smd
Contextual Info: Cross Reference Leaded Devices SMD-Packages SOD-123 1N4001 1N4002 1N4003 1N4004 1N4001 2x 1N4002 (2x) 1N4003 (2x) 1N4004 (2x) 1N4148 1N4148 (2x) SOD-323 SCD-80 SOT-23 SOT-323 SOT-343 SOT-363 SCT-595 BAW 78 M BAS 16-02W BAS 16-03W BAS16 BAL/BAR74 BAL/BAR99

OC59

Contextual Info: MOTOROLA Order this document by BCP56T1/D SEMICONDUCTOR TECHNICAL DATA BCP56T1 SERIES NPN Silicon E p itaxial Transistor Motorola Preferred Device These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors BCP54,55,56 SOT-223 TRANSISTOR NPN FEATURES Power amplifier applications 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS* TA=25℃ unless otherwise noted BCP54 BCP55

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

Contextual Info: BCP5316Q 80V PNP MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Medium Power Switching or Amplification Applications 

smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ

Contextual Info: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power ampliier applications in the 920 to 960 MHz band.

TRANSISTOR tl131

Abstract: tl239
Contextual Info: PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 – 821 MHz Description The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power ampliier applications. Features include

TL272

Abstract: TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148
Contextual Info: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use

PTFB090901

Abstract: TL127 PTFB090901EA 569w PTFB090901FA 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801
Contextual Info: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier

sot223 layout

Contextual Info: BCP54.-BCP56. NPN Silicon AF Transistors • For AF driver and output stages 4 • High collector current 3 2 • Low collector-emitter saturation voltage 1 • Complementary types: BCP51.BCP53 PNP • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101

BCP56TA

Abstract: BCP55-16 BCP51 BCP5516TA bcp54ta BCP5410
Contextual Info: BCP 54 / 55 / 56 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 Features • • • • • • • • Mechanical Data • • IC = 1A Continuous Collector Current Low Saturation Voltage VCE sat < 500mV @ 0.5A Gain groups 10 and 16 Epitaxial Planar Die Construction