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    Infineon Technologies AG BCR-183L3-E6327

    TRANS PREBIAS PNP 50V TSLP-3
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    DigiKey BCR-183L3-E6327 Reel 30,000
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    BCR183L3 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BCR183L3 Infineon Technologies PNP Silicon Digital Transistor Original PDF
    BCR 183L3 E6327 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS PNP 250MW TSLP-3 Original PDF
    BCR183L3E6327 Infineon Technologies Digital Transistors - R1= 10 kOhm , R2= 10 kOhm Original PDF
    BCR183L3E6327 Infineon Technologies Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS PNP 250MW TSLP-3 Original PDF

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    infineon marking code E1 sot23

    Abstract: E6327 DIN 6784 DIN 6784 c1 marking 2x SOT323 WM infineon marking code B2 SOT23 marking code 10 sot23 WM Marking code BCR183
    Text: BCR183. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10 kΩ , R2 = 10 kΩ • BCR183S / U: Two internally isolated transistors with good matching in one multichip package


    Original     		PDF BCR183. BCR183S BCR183/F/L3 BCR183T/W BCR183S/U EHA07183 EHA07173 BCR183 BCR183F BCR183L3 infineon marking code E1 sot23 E6327 DIN 6784 DIN 6784 c1 marking 2x SOT323 WM infineon marking code B2 SOT23 marking code 10 sot23 WM Marking code BCR183

    BCR183

    Abstract: BCR183F BCR183L3 SEMB11
    Text: BCR183./SEMB11 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10kΩ , R2 = 10kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching


    Original     		PDF BCR183. /SEMB11 BCR183/F/L3 BCR183T/W BCR183S/U SEMB11 EHA07183 EHA07173 BCR183 BCR183F BCR183 BCR183F BCR183L3 SEMB11

    Untitled

    Abstract: No abstract text available
    Text: BCR183. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10 kΩ , R2 = 10 kΩ • BCR183S / U: Two internally isolated transistors with good matching in one multichip package


    Original     		PDF BCR183. BCR183S BCR183/F/L3 BCR183T/W BCR183S/U EHA07183 EHA07173 BCR183 BCR183F

    Untitled

    Abstract: No abstract text available
    Text: BCR183./SEMB11 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10kΩ , R2 = 10kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching


    Original     		PDF BCR183. /SEMB11 BCR183/F/L3 BCR183T/W BCR183S/U SEMB11 EHA07183 EHA07173 BCR183 BCR183F

    BCR183

    Abstract: BCR183F BCR183L3 BCR183S BCR183T BCR183U
    Text: BCR183. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10kΩ , R2 = 10kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package


    Original     		PDF BCR183. BCR183/F/L3 BCR183T/W BCR183S BCR183U EHA07173 EHA07183 BCR183 BCR183F BCR183L3 BCR183 BCR183F BCR183L3 BCR183S BCR183T BCR183U