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    BCV47 NPN DARLINGTON Search Results

    BCV47 NPN DARLINGTON Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    ULS2003H/R Rochester Electronics LLC ULS2003 - High Voltage High Current Darlington Array Visit Rochester Electronics LLC Buy
    ULS2022R/B Rochester Electronics LLC ULS2022 - High Voltage High Current Darlington Array Visit Rochester Electronics LLC Buy
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy

    BCV47 NPN DARLINGTON Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Marking Code FGs

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon Darlington Transistors • • • • BCV 27 BCV47 For general AF applications High collector current High current gain Complementary types: BCV 26, BCV 46 PNP Type Marking Ordering Code (tape and reel) PinCtonfiguration 1 2 3 Package1)


    OCR Scan
    BCV47 Q62702-C1474 Q62702-C1501 OT-23 Marking Code FGs PDF

    2N2222

    Abstract: 6C556 BCw610
    Text: SMDTransistors SOT-23 Case 350mW Proelectron Series— Confd TYPE NO. BC8586 DESCRIPTION PNP LOW NOISE v n o VOLTS BV ceo (VOLTS) BVebo (VOLTS) MW MM MM m MAX 30 30 50 15 fCBO (^ ci (VOLTS) ftpE « MM MAX 30 220 475 V« (VOLTS) Vc í (SA T)« (mA> (VOUS)


    OCR Scan
    OT-23 350mW BC8586 BC858C BC859 BC85SA BC859B BC859C 8C860 8C860A 2N2222 6C556 BCw610 PDF