BCW33
Abstract: BCW32 BCW32R BCW33R BCW31R BCW31 BCW29 BCW30 PARTMARKING MV DSA003672
Text: SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS ISSUE 2 - JUNE 1995 PARTMARKING DETAILS COMPLEMENTARY TYPES BCW31 D1 BCW32 D2 BCW33 D3 BCW31 BCW32 BCW33 BCW31R D4 BCW32R D5 BCW33R D6 E C BCW31 - BCW29 BCW32 - BCW30 BCW33 - N/A
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BCW31
BCW32
BCW33
BCW31R
BCW32R
BCW33R
BCW31
BCW33
BCW32
BCW32R
BCW33R
BCW31R
BCW29
BCW30
PARTMARKING MV
DSA003672
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BCW29
Abstract: BCW30 BCW31 BCW32 BCW33 BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BCW31; BCW32; BCW33 NPN general purpose transistors Product specification Supersedes data of 1999 Apr 13 2000 Jul 04 Philips Semiconductors Product specification NPN general purpose transistors BCW31; BCW32; BCW33
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M3D088
BCW31;
BCW32;
BCW33
BCW29
BCW30.
BCW31
BCW30
BCW31
BCW32
BCW33
BP317
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marking code 10 sot23
Abstract: BCW29 BCW30 BCW31 BCW32 BCW33 bcw31 bcw32 bcw33
Text: DISCRETE SEMICONDUCTORS DATA SHEET BCW31; BCW32; BCW33 NPN general purpose transistors Product specification Supersedes data of 2000 Jul 04 2004 Feb 06 Philips Semiconductors Product specification NPN general purpose transistors BCW31; BCW32; BCW33 FEATURES
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BCW31;
BCW32;
BCW33
BCW29
BCW30.
BCW31
BCW32
marking code 10 sot23
BCW30
BCW31
BCW32
BCW33
bcw31 bcw32 bcw33
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FAIRCHILD SOT-23 MARK 30
Abstract: BCW31 BCW32 BCW33
Text: BCW31 / BCW32 / BCW33 BCW31 BCW32 BCW33 C E B SOT-23 Mark: D1 / D2 / D3 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Absolute Maximum Ratings* Symbol 3 TA = 25°C unless otherwise noted
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BCW31
BCW32
BCW33
BCW31
BCW32
OT-23
FAIRCHILD SOT-23 MARK 30
BCW33
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BCW32
Abstract: BCW31 BCW33
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS
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OT-23
BCW31
BCW32
BCW33
BCW31
BCW32
BCW33
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BCW32
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BCW31; BCW32; BCW33 NPN general purpose transistors Product data sheet Supersedes data of 2000 Jul 04 2004 Feb 06 NXP Semiconductors Product data sheet BCW31; BCW32; BCW33 NPN general purpose transistors PINNING FEATURES • Low current 100 mA
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BCW31;
BCW32;
BCW33
BCW29
BCW30.
BCW31
BCW32
BCW32
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str 450 a
Abstract: 05611 datasheet str 6707 BCW29 BCW30 BCW31 BCW32 BCW33 BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BCW31; BCW32; BCW33 NPN general purpose transistors Product specification Supersedes data of 1997 Jan 29 1999 Apr 13 Philips Semiconductors Product specification NPN general purpose transistors BCW31; BCW32; BCW33
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M3D088
BCW31;
BCW32;
BCW33
BCW29
BCW30.
BCW31
str 450 a
05611
datasheet str 6707
BCW30
BCW31
BCW32
BCW33
BP317
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bcw33 nxp
Abstract: BCW29 BCW30 BCW31 BCW32 BCW33 nxp bcw31
Text: DISCRETE SEMICONDUCTORS DATA SHEET BCW31; BCW32; BCW33 NPN general purpose transistors Product data sheet Supersedes data of 2000 Jul 04 2004 Feb 06 NXP Semiconductors Product data sheet BCW31; BCW32; BCW33 NPN general purpose transistors FEATURES PINNING
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BCW31;
BCW32;
BCW33
BCW29
BCW30.
BCW31
BCW32
bcw33 nxp
BCW30
BCW31
BCW32
BCW33
nxp bcw31
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BCW32 7
Abstract: MARK D2 SOT23 BCW32 marking d2 SOT23
Text: SEMICONDUCTOR BCW32 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 D2 1 2 Item Marking Description Device Mark D2 BCW32 hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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BCW32
OT-23
BCW32 7
MARK D2 SOT23
BCW32
marking d2 SOT23
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BCW32
Abstract: No abstract text available
Text: BCW32 BCW32 NPN General Purpose Amplifier • This device is designed for general purpose applications at collector currents to 300mA. • Sourced from process 10. 3 2 1 SOT-23 Mark: D2 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * Ta=25°C unless otherwise noted
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BCW32
300mA.
OT-23
BCW32
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transisto rs Marking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS
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OT-23
BCW31
BCW32
BCW33
BCW31
BCW32
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Untitled
Abstract: No abstract text available
Text: BCW32 BCW32 NPN General Purpose Amplifier • This device is designed for general purpose applications at collector currents to 300mA. • Sourced from process 10. 3 2 1 SOT-23 Mark: D2 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * Ta=25°C unless otherwise noted
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BCW32
300mA.
OT-23
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BCW29
Abstract: BCW30 BCW31 BCW32 BCW33 D3P SOT23 transistor SOT23 D3p
Text: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BCW31; BCW32; BCW33 NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jan 29 Philips Semiconductors Product specification
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M3D088
BCW31;
BCW32;
BCW33
BCW29
BCW30.
BCW31
BCW30
BCW31
BCW32
BCW33
D3P SOT23
transistor SOT23 D3p
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TRANSISTOR SOT23
Abstract: BCW31 BCW32 transistor
Text: 970714 01 SIDA: 1/6 ELFA artikelnr. 71-310-63 BCW31 transistor SOT23 71-310-71 BCW32 transistor SOT23 970714 01 SIDA: 2/6 970714 01 SIDA: 3/6 970714 01 SIDA: 4/6 970714 01 SIDA: 5/6 970714 01 SIDA: 6/6
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BCW31
BCW32
TRANSISTOR SOT23
transistor
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BCW32R
Abstract: BCW33R BCW31 BCW31R BCW32 BCW33 DS44
Text: BCW31 BCW32 BCW33 SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS PARTMARKING DETAILS:BCW31 - D1 BCW32 - D2 BCW33 - D3 BCW31R - D4 BCW32R - D5 BCW33R - D6 ABSOLUTE MAXIMUM RATINGS VALUE SYMBOL PARAMETER UNIT Collector-Base Voltage V CBO 32 V Collector-Emltter Voltage lc = 2.0mA
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-BCW31
BCW32
BCW33
BCW31R
BCW32R
BCW33R
BCW31
10fiA,
10/JA,
DS44
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Untitled
Abstract: No abstract text available
Text: BCW31 BCW32 BCW33 SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS PARTMARKING DETAILS:BCW31 - D1 BCW32 - D2 BCW33 - D3 BCW31R - D4 BCW32R - 05 BCW33R - D6 ABSOLUTE MAXIMUM RATINGS VALUE UNIT v CB0 32 V V ECO 32 V PARAMETER SYM BO L C ollector-B ase V oltage
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BCW31
BCW32
BCW33
BCW31R
BCW32R
BCW33R
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Untitled
Abstract: No abstract text available
Text: BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors M arkin g BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.09 0.48 0.38 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _1.02
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BCW31
BCW32
BCW33
BCW31
Q0QQ752
BCW32
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Untitled
Abstract: No abstract text available
Text: IL BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors Marking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 0.14 Pin configuration 1 = BASE 2 » EMITTER 3 = COLLECTOR 0.90 ABSOLUTE MAXIMUM RATINGS D.C. current gain at Tj = 25 °C
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BCW31
BCW32
BCW33
BCW31
BCW32
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bcw33
Abstract: No abstract text available
Text: n BCW31 BCW32 BCW33 i SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors M arking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.48 • ^pT59 Ö3B 3 Pin configuration 2.6 1 = BASE 2 = EMITTER 2 .4 1.4 1.2
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BCW31
BCW32
BCW33
BCW31
BCW32
200jiA;
bcw33
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BCW32
Abstract: BCW33 33T4 BCW31
Text: BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors Marking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE O UTLIN E D ETAILS ALL DIM EN SION S IN mm _3.0_ 2.8 0.48 0.38 Pin configuration 2.6 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.4 0.14 _L02
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BCW31
BCW32
BCW33
BCW31
BCW32
BCW33
33T4
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BCW31
Abstract: BCW32 BCW33 BCW71
Text: S e m i c o n d u c t o r “ BCW31 BCW32 BCW33 SOT-23 BCW31 / BCW32 / BCW33 & Discrete POWER & Signal Technologies National B Mark: D1 / D21 D3 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10. See
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BCW31
BCW32
BCW33
OT-23
BCW71
BCW32
BCW33
b5Ol13D
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Diodes Marking K7
Abstract: Diodes Marking K6 sot23 marking m8 transistors marking 1p BSS69 marking 1p sot23 Marking b4 SOT23 MARKING l7 MARKING K4 marking H6 sot 23
Text: SOT-23 TRANSISTORS & DIODES PRODUCT LISTA N O DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B
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OT-23
BCV71
BFQ31
BCV72
BFQ31A
BCW29
BFS20
BCW30
BCW31
BCW32
Diodes Marking K7
Diodes Marking K6
sot23 marking m8
transistors marking 1p
BSS69
marking 1p sot23
Marking b4 SOT23
MARKING l7
MARKING K4
marking H6 sot 23
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NPN marking 8e
Abstract: FMMT2222A H9 sot 23 BCV71 BCV72 BCW29 BCW30 BCW31 BCW32 BCW33
Text: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B BCW65C
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OT-23
BCV71
BFQ31
BCV72
BFQ31A
BCW29
BFS20
BCW30
BCW31
BCW32
NPN marking 8e
FMMT2222A
H9 sot 23
BCW33
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Jan 29 Philips Sem iconductors 1999 Apr 13 PHILIPS Philips Semiconductors Product specification NPN general purpose transistors BCW31 ; BCW32; BCW33 FEATURES PINNING • Low curren t 100 mA
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BCW31
BCW32;
BCW33
BCW31
MAM255
115002/00/03/pp8
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