BD 144 TRANSISTOR Search Results

BD 144 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

BD 144 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Part Number: Integra IB2226MH110 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT S-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB226MH110 is designed for S-Band radar systems operating over the	Original	PDF	IB2226MH110 IB226MH110 IB2226MH110 IB2226MH110-REV-NC-DS-REV-NC
M54020 circutor Abstract: m50730 M54410 M54020 M51231 M51B11 CVM-BD-RED-C420-H profibus vs. modbus M50790 LM50-TCP Text: Electrical measurement and control CVM Power analyzers M.5 M.5 CVM Power analyzers M.5 - CVM Power analyzers Introduction• · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 3	Original	PDF	M54040 RS-232 M54050 RS-232/485 RS-485 RS-232 M54032 M54020 M90231 M5-31 M54020 circutor m50730 M54410 M54020 M51231 M51B11 CVM-BD-RED-C420-H profibus vs. modbus M50790 LM50-TCP
0x01FFFFFF Abstract: transistor BD 522 08FF ARM7500 Text: 1 14 11 Memory Subsystems 14.1 ROM interface 14-2 14.2 DRAM interface 14-7 14.3 DMA channels 14-16 ARM7500 Data Sheet ARM DDI 0050C Preliminary - Unrestricted This chapter describes the ROM and DRAM interfaces, and the DMA channels. 14-1 Memory Subsystems	Original	PDF	ARM7500 0050C 0x00000000 0x01FFFFFF, 32-bits 0x01FFFFFF transistor BD 522 08FF
8254aa Abstract: capacitor NED je8 S-8353A33MC-IQS-T2 S-8254 battery c2u G83 PNP Transistor b9d s2914 S-8355M50MC-MDJ-T2 AVR 8335 M6M80041 Text: Network Components Business Unit CMOS IC Product Catalogue 2002-2003 October 2002 SII offers data sheets on the Internet. On SII-IC.COM, SII offers data sheets which summarize the specifications of each IC. For the latest information, access the following WEB site.	Original	PDF	CAC0210EJ0150-10/C 8254aa capacitor NED je8 S-8353A33MC-IQS-T2 S-8254 battery c2u G83 PNP Transistor b9d s2914 S-8355M50MC-MDJ-T2 AVR 8335 M6M80041
pin configuration transistor bd140 Abstract: 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139	Original	PDF	BD136 BD138 BD140 BD140-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A pin configuration transistor bd140 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136
bd135 TRANSISTOR REPLACEMENT GUIDE Abstract: transistor Bd 458 transistor BC 56 2N5981 pnp transistor BD135-BD137-BD139 BD139 PIN DATA BU108 transistor BD 325 BD139-25 mje13005 complementary Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc	Original	PDF	BD135 BD137 BD139 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B bd135 TRANSISTOR REPLACEMENT GUIDE transistor Bd 458 transistor BC 56 2N5981 pnp transistor BD135-BD137-BD139 BD139 PIN DATA BU108 transistor BD 325 BD139-25 mje13005 complementary
BU108 Abstract: 2SC7 BD 148 transistor Bd 458 2SC1419 BU326 BU100 2SC101 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD165 BD169 Plastic Medium Power Silicon NPN Transistor 1.5 AMPERE POWER TRANSISTORS NPN SILICON 45, 60, 80 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.	Original	PDF	BD165 BD169 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BU108 2SC7 BD 148 transistor Bd 458 2SC1419 BU326 BU100 2SC101
4202 BD TRANSISTOR Abstract: 4202 BD TRANSISTOR parameter BV 501 TGF4230 TGF4230-EEU bond wire gold Text: T R I Q U I N T S E M TGF4230-EEU I C O N D U C 1.2mm Discrete HFET ● ● ● ● ● ● 1200 µm X 0.5 µm HFET T O R , I N C . 4230 Nominal Pout of 28.5- dBm at 8.5- GHz Nominal Gain of 10.0- dB at 8.5- GHz Nominal PAE of 55% at 8.5 - GHz Suitable for High-Reliability Applications	Original	PDF	TGF4230-EEU TGF4230 TGF4230s 4202 BD TRANSISTOR 4202 BD TRANSISTOR parameter BV 501 TGF4230-EEU bond wire gold
Untitled Abstract: No abstract text available Text: MC100E336 5V ECL 3-Bit Registered Bus Transceiver The MC100E336 contains three bus transceivers with both transmit and receive registers. The bus outputs BUS0−BUS2 are specified for driving a 25 Ω bus; the receive outputs (Q0 − Q2) are specified for 50 Ω.	Original	PDF	MC100E336 AND8020 MC100E336 AN1404 AN1405 AN1406 AN1503 AN1504 AN1568
SCR C 4458 Abstract: smd diode S6 66a motorola 68000 Diode smd BD s18 MC68PM302PV16B smd diode S4 67A smd diode S6 58a SMD s4 67a MC68000 MC68302 Text: Microprocessors and Memory Technologies Group MC68PM302 Integrated Multiprotocol Processor with PCMCIA Reference Manual Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding	Original	PDF	MC68PM302 techni4-22 MC68PM302 INDEX-10 SCR C 4458 smd diode S6 66a motorola 68000 Diode smd BD s18 MC68PM302PV16B smd diode S4 67A smd diode S6 58a SMD s4 67a MC68000 MC68302
Keithley s900 Abstract: n4212 Keithley 7700 N4050 3B103 3B159 N 4212 transistor N4212 RT9602 BdP 285 Text: DATE D’ORIGINE DATE ORIGINATED AUTEUR/ORIGINATOR: RT96-024 MARCH 22 1996 SEMICONDUCTOR OBJECT/SUBJECT: NUMÉRO DE RAPPORT REPORT NUMBER PAGE / SHEET 1 de/ of 80 Final Electrical Parameter Capability and Design Rule Evaluation of the 1.2 µm N-Well Single Poly Double Metal Process.	Original	PDF	RT96-024 enviro1995, Keithley s900 n4212 Keithley 7700 N4050 3B103 3B159 N 4212 transistor N4212 RT9602 BdP 285
J15004 Abstract: BD751 BD751A D44H D45H D45H1 D45H10 D45H11 D45H2 bd751c Text: THOflSON/ D I S T R I B U T O R SflE D <ì02fc,fl73 G D a S T a S TCSK - 144 Bipolar Power Transistors General Purpose continued V C E (s a t)-V hFE T y p o N o. v CEO<8 u s> V C EV (SUS> V V D45H1 D 45H 2 D 45H 4 D 45H 5 D 45H 7 D45H 8 D 45H 10 D45H11	OCR Scan	PDF	D45H1 D45H2 D45H4 D45H5 O-220AB D45H7 D45H8 D45H10 D45H11 RCA8638F J15004 BD751 BD751A D44H D45H bd751c
nf 922 Abstract: No abstract text available Text: T O SH IB A 2SK2856 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2856 UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure : NF = 0.7dB f=1.5GHz High Gain : Ga = 21.5dB (f= 1.5GHz) MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	PDF	2SK2856 53Z14 --j250 nf 922
BGY133 Abstract: BGY132 PHILIPS 108 CAPACITOR Amplifier Modules VHF Amplifier Chip "Amplifier Modules" vHF amplifier module BGV132 Text: Philips Semiconductors Product specification VHF amplifier modules BGY132; BGY133 FEATURES DESCRIPTION • Broadband VHF amplifiers The BGY132 and BGY133 are two stage amplifier modules. Each module comprises two NPN silicon planar transistor chips together with lumped-element	OCR Scan	PDF	BGY132; BGY133 BGY132 BGY133 -SOT132B 711D6Eb 00742L5 OT132B. PHILIPS 108 CAPACITOR Amplifier Modules VHF Amplifier Chip "Amplifier Modules" vHF amplifier module BGV132

TESLA KU 602 Abstract: TESLA KU 601 tesla ku 611 kd 501 KD 3055 vergleichsliste DDR kd 616 tungsram UNITRA vergleichsliste Text: r electronic Vergleichsliste Silizium-Leistungstransistoren 1 Vorwort» Die Verglcich8jiatc Silizium - Leistungstransistoren wurde in erste: Linie als Arbeitsmaterial fuer die Applikationsorgane unseres Kombinates zusanmengestellt. Um das Hauptziel dic.aer Liste - NSW - Bauelemente	OCR Scan	PDF	O-220 TESLA KU 602 TESLA KU 601 tesla ku 611 kd 501 KD 3055 vergleichsliste DDR kd 616 tungsram UNITRA vergleichsliste
TFK diodes BYW 76 Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35	OCR Scan	PDF
SC108 Abstract: Wiring Diagram siemens C-PGA-391-D SC41E6 SC54 SC54E C-PGA-299-D SC132E6 CPGA120 CPGA132 Text: SIEMENS Ä Semicustom ICs SC xE6: »Sea-of-Gates« Gate-Arrays Siemens announces a sub-micron generation of channelless gate-arrays based on the proven Megalogic process SCxE6: Sub-Micron ASICs »Made in Europe« Continu no development of the proven Megalogic process new enables	OCR Scan	PDF	30speed M-OUAD-304" C-PGA-64-D C-PGA-72-D C-PGA-68-D C-PGA-120-D C-PGA-132-D C-PGA-223-D C-PGA-299-D C-PGA-391-D SC108 Wiring Diagram siemens C-PGA-391-D SC41E6 SC54 SC54E C-PGA-299-D SC132E6 CPGA120 CPGA132
ksd 302 250v, 10a Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle	OCR Scan	PDF	CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
oms 450 Abstract: PT2622 2N1841 BLY81 2SC115 BLY74 M06G A515 B3570 B3571 Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E No. H H TYPE No. I I M IN . ID E R A T E J to C M AX Pc	OCR Scan	PDF	NPN110. 350kA 2N2342t 550kA 2N2343 BLY81 25OuA0 400nS BLY87 oms 450 PT2622 2N1841 2SC115 BLY74 M06G A515 B3570 B3571
Transistor 2SA 2SB 2SC 2SD Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59 Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification N-channel junction FETs BF861A; BF861B; BF861C FEATURES • High transfer admittance • Low input capacitance • Low feedback capacitance • Low noise. APPLICATIONS • Preamplifiers for AM tuners in car radios.	OCR Scan	PDF	BF861A; BF861B; BF861C BF861A: BF861B: BF861C:
2sd 5023 Abstract: transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945 Text: SEMICONDUCTORS INC OTE D \| fil3t.t,5Q □D0Q2C12 7 \| T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE •c (A) VCEO IV) min 40 35 40 40 40 VCE(SAT) max ■c (A) (VÏ COMPLE MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1	OCR Scan	PDF	-26UNF-2A O-48D 2sd 5023 transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945
2sd 5023 Abstract: bc 9013 bc 9013 g 2SC 9012 2218A cs9012 BC526 transistor BC 945 BC287 Transistor BC345 Text: SEMICONDUCTORS INC OTE D \| fil3t.t,5Q □D0Q2C12 7 \| T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE ic (A) VCEO IV) min max 40 35 40 40 40 120 VCE(SAT) max (A) (Vï COMPLE MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1	OCR Scan	PDF	13LLSD to-39 2sd 5023 bc 9013 bc 9013 g 2SC 9012 2218A cs9012 BC526 transistor BC 945 BC287 Transistor BC345
DTL RTL Abstract: schottky transistor spice Text: HONEYÜIELL/S S E C 3ÔE D WS 4 5 5 1 0 7 2 ÜÜOOb53 h B H 0 N 3 DEVICE ARRAYS FOR OBSOLETE PART REPLACEMENT BDA/TGA FEATURES • Exact Electrical and Physical Form, Fit and Function Replacement Capability for RTL, DTL, and TTL Circuits • Tile Architecture Extends To Dual and Quad Circuits	OCR Scan	PDF	OOb53 MIL-STD-883C DTL RTL schottky transistor spice

BD 144 TRANSISTOR Search Results

BD 144 TRANSISTOR Result Highlights (5)

BD 144 TRANSISTOR Datasheets Context Search

Untitled

M54020 circutor

0x01FFFFFF

8254aa

pin configuration transistor bd140

bd135 TRANSISTOR REPLACEMENT GUIDE

BU108

4202 BD TRANSISTOR

Untitled

SCR C 4458

Keithley s900

J15004

nf 922

BGY133

TESLA KU 602

TFK diodes BYW 76

SC108

ksd 302 250v, 10a

oms 450

Transistor 2SA 2SB 2SC 2SD

Untitled

2sd 5023

2sd 5023

DTL RTL