BD182

Abstract: BD183 BD 782 BD181 T800MA BD 183 J BD 183
Contextual Info: BD 181 B D 182 BD 183 PNP S ILIC O N TR A N S IS TO R S , HOMOBASES TR AN S IS TO R S PNP S IL IC IU M , HO M O B A S E S - LF large signal power amplification A m p lific a tio n B F grands sig naux de puissance - High current switching BD 181 BD 182 BD 183

SDT 9202

Contextual Info: fK> \Pj F Q W f i P_t mmS.A. TYPE NPN PNP BD 135 BD136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 $ BD 239 $ BD 240 $ BD 239A $ BD 240A $ BD 239B $ BD 240B $ BD 239C $ BD 240C $ BD 241 $ BD 242 $ BD 241A £ BD 242A

Contextual Info: SAMSUNG S E M I C ON DUCTOR INC 02 KS54AHCT j O O KS74AHCT , u u DE | 7 T L , 4 1 4 S □ OG bD t. 4 1 | ' V-^ys -07 Dual Carry-Save Füll Adders FEATURES DESCRIPTION • • • • • The '183 is a dual full adder features an Individual carry output from each bit for use in multiple-input, carry-save

Contextual Info: • 1N6702US AVAILABLE IN JAN.JANTX AND JANTXV 1N6700US thru 1N6702US and CDLL6700 thru CDLL6702US and CDLL5A20 thru CDLL5A40 • 5 AMP SCHOTTKY BARRIER RECTIFIERS • HERMETICALLY SEALED • LEADLESS PACKAGE FOR SURFACE MOUNT • METALLURGICALLY BONDED. DOUBLE PLUG CONSTRUCTION

F075

Abstract: f050 393 f050 FE23A
Contextual Info: GE P o w e r E lectrolytic C apacitors ” r~ ~ \ 8 5 ° C Product 23A SERIES j 50 to 150 w v d c ^ . s 9 0 0 to 2 3 0 ,0 0 0 uF STANDARD PRODUCT UNE • Broad Capacitance Range • Increased Volumetric Efficiency • Low ESR •

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

3-582308-1

Abstract: B 764 5-582843-1 1-582843-4 3-582152-9
Contextual Info: 7 8 DRAWING MADE THIS IN DRAWING THIRD IS ANGLE UNPUBLISHED. COPYRIGHT 19 6 5 3 4 2 1 PR O J EC TI O N BY AMP INCORPORATED. ALL INTERNATIONAL L OC ,19 RELEASED FOR P U B L I C A T I O N RIGHTS DF RESERVED. DIST R E V IS IO N S HO ZONE LTR DESCRIPTION AL

1N6701

Abstract: 1N6700US 1N6702US CDLL5A20 CDLL5A40
Contextual Info: • 1N6702US AVAILABLE IN JAN,JANTX AND JANTXV 1N6700US thru 1N6702US and CDLL67O0 thru CDLL6702US and CDLL5A20 thru CDLL5A40 • 5 AMP SCHOTTKY BARRIER RECTIFIERS • HERMETICALLY SEALED • LEADLESS PACKAGE FOR SURFACE MOUNT • METALLURGICALLY BO NDED. D O U B LE PLU G C O N STR U C TIO N

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

Contextual Info: 8 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. 4 ,19 LOC ALL RIGHTS RESERVED. DF .415 ± . DIST REVISIONS HO LTR H J K L 015- DATE DWN APVD 8-23-95 TA TA TA TA JW JW DW DW DESCRIPTION REV REV REV REV & REDRAWN PER D F - 6 2 4 5

d705

Abstract: BD706 TRANSISTORE BD705 BD707 BD708 BD709 BD710 BD711 BD712
Contextual Info: • 7 ^ 2 3 7 0Q5ÛH25 SGS-THOMSON ^D^@g[Lg g¥il(ô ia i S G 3 _ BD705/706/707/708 BD709/710/711 /712 S-THOMSON 3ÜE D POWER LINEAR AND SWITCHING APPLICATIONS DESC RIPTIO N The BD705, BD707, BD709 and BD711 are silicon epitaxial-base NPN power transistore in Jedec TO220 plastic package intended for use in power linear

SDT 9202

Abstract: bdx 338 BU 450 bdx
Contextual Info: ALPHANUMERIC BC 107. .73 BC 108. .73 BC 109. .73 BC 170. .74 BC 171. .74 BC 172. .74 BC 173. .74 BC 174. .74 BC 177. .73 BC 178. .73 BC 179. .73 BC 190. .73 BC 237. .74 BC 238. .74 BC 239. .74 BC 250. .74

cd 332 m

Abstract: 1h1 163
Contextual Info: GE STANDARD UNE DC POWER ELECTROL YT/C PRODUCTS 50-250 W VDC STANDARD SERIES NOTE GE PART NUMBER M AX ESR MAX R M S RIPPLE CURR@ +85 C, 120Hz HEIGHT 120HZ-25C 6200 23C 622 F 050 BB 1H1 1.375 2.125 0.0237 6.9 8800 23C 882 F 050 BC 1H1 1.375 2.625 0.0174 8.8

O18t

Contextual Info: f j j P E R I C O M i n1 1 1 111 n11 111 i t 1 111 1111 1 n 11111111 m 111M11 n i t i h 111 I I 1 1 1 1 I I 1 1 I I I I I I I I 1 1 1 I I I I I I I I 1 1 1 I I 1 1 1 I I I I I 1 1 1 1 I I 1 1 I I 1 1 1 1 Precision Clock Generator for Laser Printers Features

LB 1416

Contextual Info: RN1414,1415,1416 RN1417,1418 RN 1Î14 SW ITCHIN G , INVERTER CIRCUIT, INTERFACE CIRCUIT U n it in mm A N D DRIVER CIRCUIT APPLICATIONS. + 0.5 2 .5 -0 3 + 0.25 1.5-0.15 • W ith B uilt-in B ias Resistors • Simplify C ircuit Design • Reduce a Q uantity of P arts and M anufacturing Process

Contextual Info: SIEMENS BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Ordering Code

Contextual Info: .¿I LSI LOGIC L64735 Discrete Cosine Transform Processor Description The Discrete cosine transform processor com­ putes both the forward and inverse DCT over 8 x 8 data blocks and meets the proposed International Consultative Committee for Telephones and Telegraphs CCITT standard

bc 541

Abstract: GE capacitors 0280 130 026 GE capacitors GEC004 GE 23a capacitors 0523a 10 micro farad 25 v electrolytic capacitor BB EI 382 0179 BE EI 382 0179 295A6016P33
Contextual Info: GEC 004 2009 Power Electrolytic Capacitors GE Capacitors by Regal-Beloit 1946 West Cook Road, Fort Wayne, Indiana 46818 USA 260 416-5460 Email: capacitors@regalbeloit.com GEC Phone: – 02(260) / 09 416-5400 Fax: www.gecapacitors.com www.gecapacitors.com

ARM7500FE

Abstract: 08FF 0x032000F8
Contextual Info: 1 18 11 I/O Subsystems This chapter describes the ARM7500FE I/O subsystems. 18.1 Introduction 18-2 18.2 I/O Address Space Usage 18-3 18.3 Additional I/O Chip Select Decode Logic 18-4 18.4 Simple 8MHz I/O 18-4 18.5 Module I/O 18-11 18.6 PC Bus-style I/O 18-15

scr C35

Abstract: SCR C38 SCR c50
Contextual Info: DWG NO. 3H <C-/K\0£>*r -X X X 'X X REV ~r~ SCR NO. 2Ö91 2376 / y"\ W 1 H 2564 J 2845 K L M 3532 4298 5494 N 5743 REV N DESCRIPTION BY DATE REVISED AND REDRAWN CHG POWER CONTACT FINISHj SEE SH 7 CORRECT DIM LOC SH 4 ADDED 85 GM MIN TD SIG CONT NORM F SH 7j

74ALVCH244

Abstract: j2233 RC3235 MSC501 71V416S15
Contextual Info: 79EB351 Evaluation Board Manual June 2003 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: 800 345-7015 • (408) 284-8200 • FAX: (408) 284-2775 Printed in U.S.A. 2005 Integrated Device Technology, Inc. DISCLAIMER Integrated Device Technology, Inc. reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or performance

Contextual Info: BD Series Washable DIP Switches % PROVEN WASHABLE DESIGN— NO BOOTS, CAPS OR TAPE REQUIRED— OPEN BASE DESIGN ALLOWS CLEANERS TO FLUSH THROUGH— NEW CLOSED BASE MODELS ALSO AVAILABLE • SLIDE ACTUATORS WITH POSITIVE DETENT— PREVENT ACCIDENTAL ACTUATION

marking A7p

Abstract: a7p marking
Contextual Info: 7 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED A LL C O P Y R IG H T - B Y TYCO E LE C TR O N IC S FO R 6 3 2 P U B L IC A T IO N R IG H T S LOC RESERVED. D IS T DF C O R P O R A TIO N . R E V IS IO N S HO LTR AV A MAX -.860 [21.84] D E S C R IP T IO N

0.1 MF CAPACITOR

Abstract: MSM6051
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.