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    JRH Electronics 805-061-16M8-4BD403

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    DigiKey 805-061-16M8-4BD403 1
    • 1 $1486.04
    • 10 $1486.04
    • 100 $1307.7108
    • 1000 $1307.7108
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    JRH Electronics 805-061-16MT8-7BD403

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    DigiKey 805-061-16MT8-7BD403 1
    • 1 $1527.92
    • 10 $1527.92
    • 100 $1344.5656
    • 1000 $1344.5656
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    JRH Electronics 805-061-16NF8-6BD403

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    DigiKey 805-061-16NF8-6BD403 1
    • 1 $1527.92
    • 10 $1527.92
    • 100 $1344.5656
    • 1000 $1344.5656
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    JRH Electronics 805-061-16MT8-6BD403

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    DigiKey 805-061-16MT8-6BD403 1
    • 1 $1527.92
    • 10 $1527.92
    • 100 $1344.5656
    • 1000 $1344.5656
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    JRH Electronics 805-061-16M12-26BD403

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    DigiKey 805-061-16M12-26BD403 1
    • 1 $2158.03
    • 10 $2158.03
    • 100 $1899.0668
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    BD403 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BD-403 General Electric Semiconductor Data Book 1971 Scan PDF
    BD-403 General Electric Semiconductor Data Handbook 1977 Scan PDF
    BD403 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    BD403 Unknown Transistor Replacements Scan PDF
    BD403 Unknown Cross Reference Datasheet Scan PDF
    BD403 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BD-403 Unknown GE Transistor Specifications Scan PDF
    BD403 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BD403 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BD403 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BD403 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    BD403 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    Tunnel diode

    Abstract: BD3 diode BD3 tunnel diode tunnel diodes BD3 diode BD3, "tunnel diode" 1N3712 tunnel diode specifications GE "TUNNEL DIODE" BD-406
    Text: BACK DIODES GENER AL PURPOSE F o r M ix e r s , D e te c to rs and S w itc h in g C irc u its GE Type’ Rever.'.e Voltage Min, Ip c Peak Point Current Max. mA Capacitance Max. (pF) t' - Ip = 90 .t 10 mV (mA) V r2 t mA (mV) V r, (n Jfi Forward max (mV) (a) V f ,


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    PDF TD251-256, 51A-256A, TD261/270 1N4090 1N3712 Tunnel diode BD3 diode BD3 tunnel diode tunnel diodes BD3 diode BD3, "tunnel diode" tunnel diode specifications GE "TUNNEL DIODE" BD-406

    APY12

    Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
    Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP


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    PDF Edition-1978) Ausgabe-1978) BS3934 SO-26 OT-114 NS371 APY12 BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367