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    BD675 MOTOROLA Search Results

    BD675 MOTOROLA Result Highlights (2)

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    AS839 Coilcraft Inc DSL transformer, for Motorola MC145660, SMT, not RoHS Visit Coilcraft Inc
    AS8397- Coilcraft Inc DSL transformer, for Motorola MC145660, SMT, not RoHS Visit Coilcraft Inc

    BD675 MOTOROLA Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    pin configuration NPN transistor BD679

    Abstract: 2SC101 pin configuration NPN transistor BD 677 BU108 TIP120 equivalent 2SC7 2N6052 equivalent 2SC558 BDX54 2SC1943
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD675 BD675A BD677 BD677A BD679 BD679A BD681* Plastic Medium-Power Silicon NPN Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 Min @ IC = 1.5 and 2.0 Adc


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    BD675, BD676, BD675 BD675A BD677 BD677A BD679 BD679A BD681* TIP73B pin configuration NPN transistor BD679 2SC101 pin configuration NPN transistor BD 677 BU108 TIP120 equivalent 2SC7 2N6052 equivalent 2SC558 BDX54 2SC1943 PDF

    motorola 803 transistor

    Abstract: BD675 MOTOROLA BD675 MJE 802 transistor bd679 transistor BD675 motorola mje transistor BD677 BD677 BD679
    Text: MOTOROLA Order this document by BD675/D SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Silicon NPN Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 Min @ IC = 1.5 and 2.0 Adc


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    BD675/D* BD675/D motorola 803 transistor BD675 MOTOROLA BD675 MJE 802 transistor bd679 transistor BD675 motorola mje transistor BD677 BD677 BD679 PDF

    BD675 MOTOROLA

    Abstract: BD675 BD676 BD676A BD678 BD678A BD680 BD680A BD682 transistor BD 680
    Text: MOTOROLA Order this document by BD676/D SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 Min @ IC = 1.5 and 2.0 Adc


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    BD676/D* BD676/D BD675 MOTOROLA BD675 BD676 BD676A BD678 BD678A BD680 BD680A BD682 transistor BD 680 PDF

    BD 139 transistor

    Abstract: BD676 BD678 BD676 equivalent BD675 BD676A BD678A BD680 BD680A BD682
    Text: MOTOROLA Order this document by BD676/D SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 Min @ IC = 1.5 and 2.0 Adc


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    BD676/D* BD676/D BD 139 transistor BD676 BD678 BD676 equivalent BD675 BD676A BD678A BD680 BD680A BD682 PDF

    BOX53

    Abstract: BOW83 NSOU45 PM016K40 BD875 6037Y MPS-U45 MPSU45 Motorola MPSU45 BSS50 SOT
    Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ic Max (A) PD Max (W) Min NPN Darlington Transistors, (Cont'd) 5 10 MPSU45 MPSU45 2S01413 2S0687 2N6037 MJE3300 6037Y SOM3300 SOM3300 SOM3303 Solid Stine Motorola ToshlbaCorp ToshibaCorp


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    MPSU45 2S01413 2S0687 2N6037 MJE3300 6037Y SOM3300 SOM3303 BOX53 BOW83 NSOU45 PM016K40 BD875 MPS-U45 Motorola MPSU45 BSS50 SOT PDF

    BU108

    Abstract: TRANSISTOR REPLACEMENT GUIDE BD676 BD676A application note BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD676 BD676A BD678 BD678A BD680 BD680A BD682 Plastic Medium-Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 Min @ IC = 1.5 and 2.0 Adc


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    BD676, BD675, BD676 BD676A BD678 BD678A BD680 BD680A BD682 TIP73B BU108 TRANSISTOR REPLACEMENT GUIDE BD676 BD676A application note BU326 BU100 PDF

    2N3055 plastic

    Abstract: BUT11Af equivalent BU108 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 bdx54d BDX54 BUX98A 2SC140 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Full Pak High Voltage NPN Power Transistor For Isolated Package Applications The BUT11AF was designed for use in line operated switching power supplies in a wide range of end use applications. This device combines the latest state of the art


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    BUT11AF BUT11AF TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N3055 plastic BUT11Af equivalent BU108 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 bdx54d BDX54 BUX98A 2SC140 BU326 BU100 PDF

    BU108

    Abstract: BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. • •


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    TIP47, TIP50 MJD47* MJD50* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BU108 BU326 BU100 PDF

    tip122 tip127 audio amp

    Abstract: TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT BD226-BD227 tip122 tip127 audio board D45H111 3904 Transistor BU108 tip120 darlington TIP41 amplifier TIP121 TEXAS
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 Typ @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc


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    TIP120, TIP125 TIP121, TIP126 TIP122, TIP127 220AB tip122 tip127 audio amp TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT BD226-BD227 tip122 tip127 audio board D45H111 3904 Transistor BU108 tip120 darlington TIP41 amplifier TIP121 TEXAS PDF

    MJL21194 equivalent

    Abstract: MJL21193 equivalent bux48a equivalent 2N6107 equivalent BU108 MJ4502 pair BD140 npn transistor MJL21194 2N5981 pnp transistor 2N3055 typical applications
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJL21193* NPN MJL21194* Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.


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    MJL21193 MJL21194 MJL21193* MJL21194* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A MJL21194 equivalent MJL21193 equivalent bux48a equivalent 2N6107 equivalent BU108 MJ4502 pair BD140 npn transistor MJL21194 2N5981 pnp transistor 2N3055 typical applications PDF

    BU108

    Abstract: 2SC7 RCA1C03 to-126 HIGH SPEED SWITCHING transistor BDX54 2SC1943 2SC1419 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD437 BD441 Plastic Medium Power Silicon NPN Transistor . . . for amplifier and switching applications. Complementary types are BD438 and BD442. 4.0 AMPERES POWER TRANSISTORS NPN SILICON CASE 77–08 TO–225AA TYPE ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ


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    BD438 BD442. BD437 BD441 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BU108 2SC7 RCA1C03 to-126 HIGH SPEED SWITCHING transistor BDX54 2SC1943 2SC1419 BU326 BU100 PDF

    ST T4 3580

    Abstract: BU108 bdw93c applications transistor bd136 in dpak packaging 2SC103 ir411 TRANSISTOR BC 384 BDX54 2SB56 IC 714
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJD243* Plastic Power Transistor DPAK For Surface Mount Applications *Motorola Preferred Device . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 100 Vdc (Min) @ IC = 10 mAdc


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    MJD243* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 ST T4 3580 BU108 bdw93c applications transistor bd136 in dpak packaging 2SC103 ir411 TRANSISTOR BC 384 BDX54 2SB56 IC 714 PDF

    bu806 REPLACEMENT

    Abstract: k 3569 BU108 2SD211 BU806 NSP2100 TL MJE2955T 2SC1943 2SC1419 BU326
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal deflection circuits in TV’s and CRT’s.


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    220AB BU806 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C bu806 REPLACEMENT k 3569 BU108 2SD211 BU806 NSP2100 TL MJE2955T 2SC1943 2SC1419 BU326 PDF

    MJE15020

    Abstract: DTS423 mje15033 replacement 2SC243 BD388-5 2SC1826 BD263 2SC1903 SE9302 2SA698
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE340 Plastic Medium Power NPN Silicon Transistor 0.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS 20 WATTS . . . useful for high–voltage general purpose applications. • Suitable for Transformerless, Line–Operated Equipment


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    MJE340 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 MJE15020 DTS423 mje15033 replacement 2SC243 BD388-5 2SC1826 BD263 2SC1903 SE9302 2SA698 PDF

    BU108

    Abstract: 2SA1046 driver amplifier tip31 TRANSISTOR BDX54 MJE5190 2SB56 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5191 2N5192* Silicon NPN Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195. *Motorola Preferred Device 4 AMPERE POWER TRANSISTORS


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    2N5194, 2N5195. 2N5191 2N5192* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BU108 2SA1046 driver amplifier tip31 TRANSISTOR BDX54 MJE5190 2SB56 BU326 BU100 PDF

    D675A

    Abstract: d679a
    Text: MOTOROLA Order this document by BD675/D SEMICONDUCTOR TECHNICAL DATA B D 67 5 B D 675A B D 677 B D 677A B D 67 9 B D 679A B D 681* P la s tic M e d iu m -P o w e r S ilic o n NPN D arlin g to n s . . . for use as output devices in complementary general-purpose amplifier applica­


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    BD675/D BD675, BD676, O-225AA D675A d679a PDF

    D675A

    Abstract: d679a transistor BD 677 BD675 MOTOROLA transistor H 802 681 transistor 675AE
    Text: MOTOROLA Order this document by BD675/D SEMICONDUCTOR TECHNICAL DATA B D 67 5 B D 675A B D 677 B D 677A B D 67 9 B D 679A B D 681* P la s tic M e d iu m -P o w e r S ilic o n NPN D arlin g to n s . . . for use as output devices in complementary general-purpose amplifier applica­


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    BD675/D BD675, BD676, O-225AA D675A d679a transistor BD 677 BD675 MOTOROLA transistor H 802 681 transistor 675AE PDF

    D679A

    Abstract: BD670A transistor BD 800 transistor BD 677 BD681 EQUIVALENT transistor BD 677A 681 transistor mje 800 D679 BD670
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA P la s tic M e d iu m -P o w e r S ilicon NPN D arlin gto n s . . . for use as output devices in complementary general-purpose amplifier applica­ tions. • High DC Current Gain — hpE = 750 Min @ lc = 1-5 and 2.0 Adc


    OCR Scan
    BD675, BD676, 7677A BD679 BD681 D679A BD670A transistor BD 800 transistor BD 677 BD681 EQUIVALENT transistor BD 677A 681 transistor mje 800 D679 BD670 PDF

    BD438 equivalent

    Abstract: bd679 PNP transistor BD878 BD437 equivalent bd442 equivalent Case 77-08 bd676 Circuit Schematic BD438 356SR BD442
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD438 BD440 BD442 P lastic Medium Power Silicon PNP Transistor . . . for amplifier and switching applications. Complementary types are BD437 and BD441. 4.0 AMPERES POWER TRANSISTORS P N P SILICON CASE 77-08 TO-225AA TYPE


    OCR Scan
    BD437 BD441. BD438 BD440 BD442 O-225AA BD438 equivalent bd679 PNP transistor BD878 BD437 equivalent bd442 equivalent Case 77-08 bd676 Circuit Schematic 356SR PDF

    BD876

    Abstract: transistor BD 680 BD878 BD660 BD876A LTA 703 S BD676
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic M edium -Pow er Silicon PNP Darlingtons . . . for use as output devices in complementary general-purpose amplifier applica­ tions. • High DC Current Gain — hpE = 750 Min @ lc - 1.5 and 2.0 Adc • Monolithic Construction


    OCR Scan
    BD676, BD675, BD676 BD676A BD678 BD678A BD876 transistor BD 680 BD878 BD660 BD876A LTA 703 S PDF

    bd680

    Abstract: bd678 bd676 bd-678
    Text: MOTOROLA Order this document by BD676/D SEMICONDUCTOR TECHNICAL DATA BD676 BD676A BD678 BD678A BD680 BD680A BD682 P la stic M edium -Pow er S ilico n PNP Darlingtons . . . for use as output devices in complementary general-purpose amplifier applica­ tions.


    OCR Scan
    BD676/D BD676 BD676A BD678 BD678A BD680 BD680A BD682 BD676, BD675, bd680 bd678 bd676 bd-678 PDF

    Case 77-08

    Abstract: BD678 equivalent BD678 BD676 bd680 transistor BD676A BD682 transistor bd680 BD 139 transistor BD680
    Text: MOTOROLA Order this document by BD676/D SEMICONDUCTOR TECHNICAL DATA BD676 BD676A BD678 BD678A BD680 BD680A BD682 P la stic M edium -Pow er S ilico n PNP Darlingtons . . . for use as output devices in complementary general-purpose amplifier applica­ tions.


    OCR Scan
    BD676/D BD676, BD675, BD676 BD676A BD678 BD678A BD680 BD680A BD682 Case 77-08 BD678 equivalent bd680 transistor transistor bd680 BD 139 transistor PDF

    BD786

    Abstract: B0680 b0775 BD436 MOTOROLA 2N5190 MOTOROLA 2N5192 BD441 B0785 3N6034 B0677 BD185
    Text: POWER TRANSISTORS — BIPOLAR PLASTIC continued TO-126 Package (continued) R esistive Sw itching lcCont ^ C E O (sua) Amps Max Volts Min 4 NPN PNP ^FE M in/M ax @ lc Arrip ts t( US @ lc fr MHZ PD (Case) US Max Max Amp Min @ 25°C Watts 20 BD433 BD434 50 min


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    O-126 BD433 BD434 BD185 BD186 BD435 BD436 2N5190 2N5193 2N6037 BD786 B0680 b0775 BD436 MOTOROLA 2N5190 MOTOROLA 2N5192 BD441 B0785 3N6034 B0677 PDF

    MJE520

    Abstract: bd189 sc 6038 MJE12007 MOTOROLA 527 33A mj4647 mje13006 BD 433NPNTO-126 Je105 mps-u
    Text: MOTORCLA SC XSTRS/R F 12E D | t3t?5SM aüâ4m ? T | T -9 1 -0 1 Selection By Package Motorola power transistors are available in a wide variety of metal and plastic packages to match thermal, electrical and cost requirements. The following table com pares the basic


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    -204AA -204AE T0-204A 97A-02 O-205AD BUS51 BUV21 BUV11 2N6249 BUX41 MJE520 bd189 sc 6038 MJE12007 MOTOROLA 527 33A mj4647 mje13006 BD 433NPNTO-126 Je105 mps-u PDF