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    ROHM Semiconductor BD800M5WHFP-CTR

    IC REG LIN POS ADJ 500MA HRP-5
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    DigiKey BD800M5WHFP-CTR Cut Tape 6,115 1
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    BD800M5WHFP-CTR Digi-Reel 6,115 1
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    Quest Components BD800M5WHFP-CTR 401
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    CoreStaff Co Ltd BD800M5WHFP-CTR 502
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    ROHM Semiconductor BD800M7WFP2-CE2

    IC REG LIN POS ADJ 700MA TO263-5
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    DigiKey BD800M7WFP2-CE2 Cut Tape 1,683 1
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    CoreStaff Co Ltd BD800M7WFP2-CE2 50
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    ROHM Semiconductor BD800M5WFPJ-CE2

    IC REG LIN POS ADJ 500MA TO252
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    DigiKey BD800M5WFPJ-CE2 Cut Tape 248 1
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    Mouser Electronics BD800M5WFPJ-CE2 158
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    BD800M5WFPJ-CE2 748
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    ROHM Semiconductor BD800M5WFP2-CE2

    IC REG LIN POS ADJ 500MA TO263-5
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    DigiKey BD800M5WFP2-CE2 Digi-Reel 35 1
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    BD800M5WFP2-CE2 Reel 500
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    Quest Components BD800M5WFP2-CE2 392
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    CoreStaff Co Ltd BD800M5WFP2-CE2 490
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    Pentair Equipment Protection - Hoffman VBD800

    DEPTH DIVIDING BAR 800
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    DigiKey VBD800 Bulk 1
    • 1 $237.79
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    BD800 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BD800 General Electric Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V, 65W. Scan PDF
    BD800 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    BD800 Motorola European Master Selection Guide 1986 Scan PDF
    BD800 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BD800 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BD800 Unknown Cross Reference Datasheet Scan PDF
    BD800 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BD800 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BD800 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BD800 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BD800 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BD800 National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF
    BD800 National Semiconductor PRO ELECTRON SERIES - JFET Scan PDF
    BD800M5WFP2-CE2 ROHM Semiconductor IC REG LIN POS ADJ 500MA TO263-5 Original PDF
    BD800M5WFP2-CE2 ROHM Semiconductor IC REG LIN POS ADJ 500MA TO263-5 Original PDF
    BD800M5WFPJ-CE2 ROHM Semiconductor IC REG LIN POS ADJ 500MA TO252 Original PDF
    BD800M5WHFP-CTR ROHM Semiconductor IC REG LIN POS ADJ 500MA HRP-5 Original PDF
    BD800M5WHFP-CTR ROHM Semiconductor IC REG LIN POS ADJ 500MA HRP-5 Original PDF
    BD800M7WFP2-CE2 ROHM Semiconductor IC REG LIN POS ADJ 700MA TO263-5 Original PDF

    BD800 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BD800

    Abstract: power transistor 3A BD799 BD79
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BD800 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -80V(Min) ·Low Saturation Voltage ·Complement to Type BD799 APPLICATIONS ·Designed for a wide variety of medium-power switching and


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    BD800 BD799 Powe800 -100mA; BD800 power transistor 3A BD799 BD79 PDF

    2n1243

    Abstract: 2N1242 PB6025A bsv82 HA7528 2SA13590 2SA1361 TO4 package 2SB9050 2n1239
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 20 Ic Max (A) V(BR)CEO (V) fT hFE Min Max (Hz) ICBO Max (A) tr Max (8) tf Max (8) Po Max (W) Toper Max (Oe) Package Style >= 50 A, (Cont'd) SDT3901 SDT3602 SDT3602 SDT3902 SDT3902 SDT3902 MJ14001 SDT3603


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    10uAxial 220AB 2n1243 2N1242 PB6025A bsv82 HA7528 2SA13590 2SA1361 TO4 package 2SB9050 2n1239 PDF

    SA452

    Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
    Text: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this


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    Am29LV2562M S29GL512N S29GL512N SA452 SA336 SA424 120R SA487 EE8000 a78000a7ffff c58000c5ffff SA4871 PDF

    BA379

    Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
    Text: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


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    K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA379 BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324 PDF

    asme SA388

    Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
    Text: S29GL-M MirrorBitTM フラッシュファミリ S29GL256MS29GL128MS29GL064MS29GL032M 256M ビット,128M ビット,64M ビット,および 32M ビット, 3.0V 単一電源,ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ


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    S29GL-M S29GL256MS29GL128MS29GL064MS29GL032M S29GL128MS29GL128N S29GL256MS29GL256N S29GLxxxN 00-B-5 S29GL032M LAA064 asme SA388 gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63 PDF

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


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    MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417 PDF

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


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    2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046 PDF

    120R

    Abstract: C8800
    Text: Am29LV2562M Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


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    Am29LV2562M 120R C8800 PDF

    l256mh113

    Abstract: L256ML123R
    Text: Am29LV256M Data Sheet September 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


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    Am29LV256M l256mh113 L256ML123R PDF

    L256MH113R

    Abstract: L256ML113R
    Text: Am29LV256M Data Sheet -XO\  7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG


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    Am29LV256M L256MH113R L256ML113R PDF

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


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    Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent PDF

    s29gl032m10tair

    Abstract: No abstract text available
    Text: S29GLxxxM MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology Datasheet PRELIMINARY Distinctive Characteristics


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    S29GLxxxM S29GL256M, S29GL128M, S29GL064M, S29GL032M 32Megabit, 128-word/256-byte 8-word/16-byte BGA-80P-M02 s29gl032m10tair PDF

    SA293

    Abstract: SA273 988000
    Text: DATASHEET Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations


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    Am29LV256M 16-Bit/32 16-word/32-byte 56-pi SA293 SA273 988000 PDF

    L256ML

    Abstract: SA4871 BD8000 sa340 transistor SA427 SA370 8A000 740-0007 Am29LV256 SA36-110
    Text: ADVANCE INFORMATION Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations


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    Am29LV256M 16-Bit/32 128-word/256-byte 8-word/16-byte L256ML SA4871 BD8000 sa340 transistor SA427 SA370 8A000 740-0007 Am29LV256 SA36-110 PDF

    sa330

    Abstract: E3800 spansion top marking Am29LV256M Am29LV256MH S29GL256M
    Text: Am29LV256M Data Sheet For new designs, S29GL256M supercedes Am29LV256MH/L and is the factory-recommended migration path for this device. Please refer to the S29GLxxxM Family Datasheet for specifications and ordering information. July 2003 The following document specifies Spansion memory products that are now offered by both Advanced


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    Am29LV256M S29GL256M Am29LV256MH/L S29GLxxxM sa330 E3800 spansion top marking Am29LV256M Am29LV256MH PDF

    S29GL128P

    Abstract: a8800 S29GL032 S29GL256p S29GL032A S29GL032M S29GL064A S29GL064M S29GL128M S29GL256M
    Text: S29GL-M MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit Process Technology Data Sheet This product family has been retired and is not recommended for designs. For


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    S29GL-M S29GL256M, S29GL128M, S29GL064M, S29GL032M S29GL032A, S29GL064A, S29GL128P, S29GL256P S29GL032M, S29GL128P a8800 S29GL032 S29GL032A S29GL032M S29GL064A S29GL064M S29GL128M S29GL256M PDF

    Untitled

    Abstract: No abstract text available
    Text: C-Ware Application Design and Building Guide C-WARE SOFTWARE TOOLSET, VERSION 2.4 CSTADBG-UG/D REV 01 2004 Freescale Semiconductor, Inc. All rights reserved. Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc. C-3e, C-5, C-5e, C-Port, and C-Ware are also trademarks of Freescale Semiconductor. All


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    PDF

    BA512

    Abstract: ba469 BA516 BA508 BA323 BA340 BA476 BA507 BA312 BA379
    Text: K8S5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Muxed Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Preliminary February 4, 2004 Preliminary 0.1 Revision - Correct Device ID of Table 9 from 22F8h to 22FEh


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    K8S5615ET 22F8h 22FEh 54MHz 66MHz 270sec 240sec 256Byte 00003FH 00007FH BA512 ba469 BA516 BA508 BA323 BA340 BA476 BA507 BA312 BA379 PDF

    bd799

    Abstract: bd800
    Text: Power Transistors File Number 1242 HARR IS S E M I C O N D S E CT OR BD795, BD796, BD797, BD798, BD799, BD800, BD801, BD802 27E ]> • 43GS271 Epitaxial-Base, Silicon N -P-N and P-N-P VERSAWATT Transistors QGeamT-? ■ HA S T - 3 3 ~ \ TERMINAL DESIGNATIONS


    OCR Scan
    BD795, BD796, BD797, BD798, BD799, BD800, BD801, BD802 43GS271 O-22QAB bd799 bd800 PDF

    rca 17556

    Abstract: 17556 power amplifier transistor 17556 17556 transistor 17556 SOLID STATE 17556 17556 RCA 17556 transistor rca 17556 BD801 BD795
    Text: QÎ 3875081 G E . File Num bei' SOLID STATE DE | 3 f l 7 S G f l l □017554 B | ~ 01E 1242 17554 D f-S y-// BD795, BD796, BD797, BD798, BD799, BD800, BD801, BD802 Epitaxial-Base, Silicon . N-P-N and P-N-P VERSAWATT Transistors TERMINAL DESIGNATIONS G e n e ra l-P u rp o s e M e d iu m -P o w e r T y p e s fo r


    OCR Scan
    BD795, BD796, BD797, BD798, BD799, BD800, BD801, BD802 O-220AB RCA-BD795, rca 17556 17556 power amplifier transistor 17556 17556 transistor 17556 SOLID STATE 17556 17556 RCA 17556 transistor rca 17556 BD801 BD795 PDF

    BD806

    Abstract: TRANSISTOR C 557 B B0806 TRANSISTOR bd 147 BD808 b0808 ADC 808 adc 809 T557 221A-04
    Text: M OT OR OL A SC X S TR S /R 1EE D I F b3fci7254 QDâM7ti3 b | MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC HIGH POWER SILICON PNP TRANSISTOR . . . designed for use in high power audio amplifiers complementary or quasi complementary circuits. utilizing 10 AMPERE


    OCR Scan
    b3fci7254 47fci3 bd806 bd810 Ran003 AN-415) TRANSISTOR C 557 B B0806 TRANSISTOR bd 147 BD808 b0808 ADC 808 adc 809 T557 221A-04 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMELAB LTD •type No. SpUon'¡ty Polarl,y 37E D •c cont Package V C E 0 t’ FE @ ■ Vc e /Ic fll331fl? GG0G043 1 ■ SMLB «T PD BD746 BD 7 4 6 A BD 7 4 6 B B D7 4 6 C BD 7 4 6 D PNP PNP PNP PNP PNP SOT 9 3 SOT 9 3 SOT93 SOT 9 3 S OT 9 3 45 60 80 100


    OCR Scan
    fll331fl? GG0G043 BD746 BD750 BD751 BD797 BD798 BD799 T0220 PDF

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan
    SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845 PDF

    F B0347

    Abstract: b0349 BC184LB B0679 35S20 BDX330 B0242c f b0349 B0346 BD370-6
    Text: Pro Electron Series in o PRO ELECTRON SERIES Bipolar—see page 5-37 for JFET o Type No. BC107 BC107A Can Styl« TO-18 TO-18 VCES* v CBO (VI M in 50 50 v CEO (V) M in 45 45 v EB0 (V) M in 6 6 •c e s * 'CBO a InA) Max 15* 15* V CB IV) 50 50 H rh Ne 1 kH z *


    OCR Scan
    DD3SS11 F B0347 b0349 BC184LB B0679 35S20 BDX330 B0242c f b0349 B0346 BD370-6 PDF