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    ROHM Semiconductor BD9515NUX-E2

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ameya Holding Limited BD9515NUX-E2 100 1
    • 1 $0.21
    • 10 $0.21
    • 100 $0.15415
    • 1000 $0.14008
    • 10000 $0.12948
    		Buy Now

    BD951 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BD951 Continental Device India TO-220 Plastic Package Original PDF
    BD951 Philips Semiconductors Silicon Epitaxial Base Power Transistors Original PDF
    BD951 Continental Device India NPN PLASTIC POWER TRANSISTORS / PNP PLASTIC POWER TRANSISTORS Scan PDF
    BD951 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    BD951 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    BD951 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BD951 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BD951 Unknown Transistor Replacements Scan PDF
    BD951 Unknown Transistor Replacements Scan PDF
    BD951 Unknown Cross Reference Datasheet Scan PDF
    BD951 Unknown Transistor Replacements Scan PDF
    BD951 Unknown Transistor Replacements Scan PDF
    BD951 Unknown Transistor Replacements Scan PDF
    BD951 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BD951 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BD951 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BD951F Philips Semiconductors Silicon Epitaxial Power Transistors Original PDF
    BD951F Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BD951F Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    BD951 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BD951

    Abstract: BD949 BD950 BD952 BD953 BD954 BD955 BD956
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 BD949, 951, 953, 955 BD950, 952, 954, 956


    Original     		O-220 BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 BD951 BD949 BD950 BD952 BD953 BD954 BD955 BD956 PDF

    BD951

    Abstract: BD952 pnp 500ma 40v
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BD952 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -80V(Min) ·DC Current Gain: hFE= 40(Min)@ IC= -500mA ·Complement to Type BD951 APPLICATIONS ·Designed for power amplifier and switching applications


    Original     		BD952 -500mA BD951 BD951 BD952 pnp 500ma 40v PDF

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 BD949, 951, 953, 955 BD950, 952, 954, 956 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS


    Original     		O-220 BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 PDF

    BD951

    Abstract: BD952 BD949 BD950 BD953 BD954 BD955 BD956
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 BD949, 951, 953, 955 BD950, 952, 954, 956 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS


    Original     		O-220 BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 BD951 BD952 BD949 BD950 BD953 BD954 BD955 BD956 PDF

    BD955

    Abstract: NPN Transistor TO220 VCEO 80V 100V 2a 100v NPN BD949 BD951
    Text: BD949 BD953 BD951 BD955 MECHANICAL DATA Dimensions in mm SILICON EPITAXIAL BASE 9.65 10.66 4.82 5.33 3.83 Dia. 4.08 4.19 4.82 NPN POWER TRANSISTORS 1.14 1.39 9.01 9.52 12.70 13.71 2.66 3.42 1.01 Rad. 1.52 1 2 3 NPN Transistors in a plastic TO–220 package.


    Original     		BD949 BD953 BD951 BD955 BD950 220AB BD955 NPN Transistor TO220 VCEO 80V 100V 2a 100v NPN BD949 BD951 PDF

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original     		2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046 PDF

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


    Original     		2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes PDF

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


    Original     		BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037 PDF

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


    Original     		2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544 PDF

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


    Original     		MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar PDF

    Untitled

    Abstract: No abstract text available
    Text: BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 BD949, 951, 953, 955 BD950, 952,954,956 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Amplifier and Switching Applications DIM A B C D E F G H J K L M N MIN MAX 16.51 10.67 4.83 0,90


    OCR Scan     		BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 PDF

    951F

    Abstract: No abstract text available
    Text: BD949F; BD951F ^BD953F; BD955F J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors each in a SO T 186 envelope w ith an electrically insulated mounting base. PNP complements are B D 950F, BD 952F, BD 9 5 4 F and BD 956F. Q U IC K R E F E R E N C E D A T A


    OCR Scan     		BD949F; BD951F BD953F; BD955F bb53T31 951F PDF

    bd955

    Abstract: BD953F bd950 BD949F BD950F BD951F BD952F BD954F BD955F BD956F
    Text: BD949F; BD951F BD953F; BD955F SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors each in a SOT 186 envelope with an electrically insulated mounting base. PNP complements are BD950F, BD952F, BD954F and BD956F. QUICK REFERENCE DATA 953F 955F 60


    OCR Scan     		BD949F; BD951F BD953F; BD955F BD950F, BD952F, BD954F BD956F. BD949F bd955 BD953F bd950 BD950F BD952F BD955F BD956F PDF

    HU09

    Abstract: bd955 BD953F BD949F BD950F BD951F BD952F BD954F BD955F BD956F
    Text: BD949F; BD951F BD953F; BD955F PHILIPS INTERNATIONAL SbE D I 7110fl2b 0 0 4 3 1 0 b ST3 « P H I N T- SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors each ina SOT186 envelope with an electrically insulated mounting base. PNP complements are BD950F, BD952F, BD954F and BD956F.


    OCR Scan     		BD949F; BD951F BD953F; BD955F 7110fl2b 004310b OT186 BD950F, BD952F, BD954F HU09 bd955 BD953F BD949F BD950F BD952F BD955F BD956F PDF

    b0951

    Abstract: bu508at b0949 BD243B BD243C BD949 BD951 BD953 BD955 BU406
    Text: TO-220 Power Package Transistors NPN . Electrical Characteristic« (Ta=25*C, Unless Otherwise Specified) Maximum Ratings Type No. t Pd (W) (V) Min Tc=25°c (A) 80 5 65 100 100 5 BD949 60 60 BD951 80 BD953 'coo (HA) Max *Ve a Min Max fc» (A) « 'c (mA)


    OCR Scan     		O-220 BD243B BD243C BD949 BD951 BD953 BD955 BU406 BUV46 CD3968 b0951 bu508at b0949 PDF

    T1P110

    Abstract: BD243B BD243C BD949 BD951 BD953 BD955 BU406 BU407 BU505
    Text: TO-220 Power Package Transistors NPN Electrical Characteristics (T»=25"C, Unless Otherwise Specified) Maximum Ratings Type No. PB (W) Tc=25°c V C80 ^CEO ^EBO (V) Mifl (V) Min (V) Min BD243B 80 80 5 65 BD243C 100 100 5 BD949 60 60 BD951 80 BD953 'c80


    OCR Scan     		O-220 BD243B BD243C BD949 BD951 BD953 BD955 CD3968 CSD1025 MJE13005 T1P110 BU406 BU407 BU505 PDF

    BD954

    Abstract: No abstract text available
    Text: BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 L BD949, 951, 953, 955 BD950, 952, 954, 956 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Amplifier and Switching Applications PIN CO N FIG U RA TIO N 1. BASE 2. C O L L E C T O R 3. EM ITTER


    OCR Scan     		BD949, BD950, BD951, BD953, BD955 BD952, BD954, BD956 BD954 PDF

    952F

    Abstract: bd955 BD949F BD950F BD951F BD953F BD954F BD955F 956F 954F
    Text: BD950F; 952F BD954F; 956F I^ SILICON EPITAXIAL POWER TRANSISTORS PNP Silicon power transistors each in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BD949F, BD951F, BD953F and BD955F. Q U ICK R E F E R E N C E D A TA Collector-base voltage


    OCR Scan     		BD950F; BD954F; OT186 BD949F, BD951F, BD953F BD955F. BD950FJ OT186. BD950F 952F bd955 BD949F BD951F BD954F BD955F 956F 954F PDF

    B0952

    Abstract: b0951 BD951 BD954 b0949 B0950 bd955 npn transistors,pnp transistors BD949 BD950
    Text: CDU BD949, 951, 953, 955 BD950, 952, 954, 956 BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Amplifier and Switching Applications PIN C O N FIG U R AT IO N 1. B A S E 2. C O L L E C T O R


    OCR Scan     		BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 B0952 b0951 BD951 BD954 b0949 B0950 npn transistors,pnp transistors BD949 BD950 PDF

    Untitled

    Abstract: No abstract text available
    Text: BD950F; 952F BD954F;956F _ SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors each in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BD949F, BD951F, BD953F and BD955F.


    OCR Scan     		BD950F; BD954F OT186 BD949F, BD951F, BD953F BD955F. BD950F bb53T31 D034SAO PDF

    Untitled

    Abstract: No abstract text available
    Text: BD949F; BD951F BD953F; BD955F PHILIPS INTERNATIONAL SbE D I 7110fl2b 004310b ST3 « P H I N SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors each in a SO T186 envelope w ith an electrically insulated mounting base. PNP complements are B D 9 5 0 F , B D 9 5 2 F , BD 954F and B D 956F.


    OCR Scan     		BD949F; BD951F BD953F; BD955F 7110fl2b 004310b 7110aEb QDM3107 PDF

    JE3055T

    Abstract: je13007
    Text: TO-220 Power Package Transistors NPN Electrical Characteristic« (Ta=25'C, Unless Otherwise Specified) Maximum Ratings Type No. ^CBO V CE0 ^EBO (V) Min (V) Min (V) Min BD243B 80 80 5 65 BD243C 100 100 5 BD949 60 60 BD951 80 BD953 h EE e Min Max 'c* (A) V CE


    OCR Scan     		O-220 BD243B BD243C BD949 BD951 MJE13005 JE13007 S1000 JE3055T SJE1349 JE3055T je13007 PDF

    T1P42C

    Abstract: bd534j T1P102
    Text: TO-220 PIN CO N FIG U R ATIO N 1. B A S E 2. C O L L E C T O R 3. EM ITTER 4. C O L L E C T O R c ,01 0 -I MIN MAX 14,42 9,63 3,56 16.51 10,67 4,83 0,90 1,40 3,88 2,79 3,43 0,56 14,73 6,35 2,92 DIM E A B C D E F G H J K L M N 3 G - 1,15 3,75 2,29 2,54 12,70


    OCR Scan     		O-220 O-220 TIP125 TIP126 TIP127 TIP135 TIP136 T1P42C bd534j T1P102 PDF

    T1P42C

    Abstract: No abstract text available
    Text: TO-220 PIN CONFIGURATION 1. BASE 2 . COLLECTOR 3. EMITTER 4. COLLECTOR c DIM E ,01 0 -I A B C D E F G H J K L M N 3 G MIN MAX 14,42 9,63 3,56 16.51 10,67 4,83 0,90 1,40 3,88 2,79 3,43 0,56 14,73 6,35 2,92 - 1,15 3,75 2,29 2,54 12,70 - 2,03 - 7 31,24 DEG TO-220 Power Package Transistors NPN


    OCR Scan     		O-220 O-220 O-237-2 00014QÃ T1P42C PDF