BDW52C
Abstract: BDW51C
Text: SavantIC Semiconductor Product Specification BDW52C Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Complement to type BDW51C ·Excellent safe operating area APPLICATIONS ·For use in power linear and switching applications PINNING see Fig.2
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BDW52C
BDW51C
-100V;
BDW52C
BDW51C
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Untitled
Abstract: No abstract text available
Text: BDW51C Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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BDW51C
O204AA)
16-Jul-02
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Untitled
Abstract: No abstract text available
Text: BDW51C Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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BDW51C
O204AA)
18-Jun-02
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BDW51C
Abstract: BDW52C
Text: SavantIC Semiconductor Product Specification BDW51C Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type BDW52C ·Excellent safe operating area APPLICATIONS ·For use in power linear and switching applications PINNING see Fig.2
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BDW51C
BDW52C
BDW51C
BDW52C
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BDW51C dimension
Abstract: BDW51C
Text: BDW51C Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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BDW51C
O204AA)
31-Jul-02
BDW51C dimension
BDW51C
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BDW51C
Abstract: BDW52C
Text: Inchange Semiconductor Product Specification BDW51C Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type BDW52C ・Excellent safe operating area APPLICATIONS ・For use in power linear and switching applications PINNING see Fig.2
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BDW51C
BDW52C
BDW51C
BDW52C
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2N5657 equivalent
Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.
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2N5655
2N5656
2N5657
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
2N5657 equivalent
2SA1046
BU326
BU108
BU100
2SC2331 Y
tip47 419
2N3792 application notes
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MJE494
Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS
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BD157
BD158
BD159
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
MJE494
2SC1419
BD 804
2SD675
MJE104
BD581
BD135 CURVES
MJ1000
DTS-4041
2N5037
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2SD669 equivalent
Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc
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2N6609
2N3773)
2N6667
2N6668
220AB
2N6387,
2N6388
2SD669 equivalent
BD801
BDY29 equivalent
BU108
2SC2080
2SD436
2N6021
BD345
tip122 D-PAK package
2SD544
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2SC495
Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink
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MJF6107
2N6107
E69369,
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
2SC495
NSP41A
BU108
transistor BD614 MOTOROLA
2SA663
BD4122
BD661
MJ1000
NSP2100
D45VH4 similar
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mje521 equivalent
Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry
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MJE521
MJE371
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
mje521 equivalent
BU108
2N3055 plastic
2N6488 MOTOROLA
Motorola transistors MJE3055 TO 127
3904 Transistor
BDX54
tip122 tip127 audio amp
BU326
BU100
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2N3055
Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes
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MJE2955T
MJE3055T
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N3055
BU108
AN415A
MJE2955T ST
BDX54
2n3055 audio amplifier application note
BU326
BU100
mje13005
BDV64
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2N5631 equivalent
Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —
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2N5630,
2N6030
2N5631,
2N6031
2N5630
2N5631
2N5631 equivalent
2N5630 "cross-reference"
Chomerics
BU108
2SA1046
tip122 tip127 audio amp
BU326
BU100
2sd313 equivalent
NPN/TIP42C as regulator
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BD179-10 equivalent
Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
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BD179
BD180
BD179-10
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
BD179-10 equivalent
BU108
2SA1046
2SC7
BDX54
BUX98A
BU326
BU100
bul1
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TRANSISTOR BC 384
Abstract: BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF47 High Voltage Power Transistor Isolated Package Applications NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS 28 WATTS Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required
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TIP47
E69369,
MJF47
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TRANSISTOR BC 384
BU108
bd139 equivalent transistor
2N3055 equivalent
RCA1C03
transistor Bc 574
BU326
BU100
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MJ11017 equivalent
Abstract: BU108 MJ11021 BU326 BU100 MJE3055T
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ11017 MJ11021* NPN MJ11018* Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJ11022 • High dc Current Gain @ 10 Adc — hFE = 400 Min All Types
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MJ11018,
MJ11022,
MJ11017
MJ11021*
MJ11018*
MJ11022
TIP73B
TIP74
TIP74A
TIP74B
MJ11017 equivalent
BU108
MJ11021
BU326
BU100
MJE3055T
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BU108
Abstract: transistor Bc 574 2n6107 MOTOROLA 2SC1943 MJ3055 to220 2SC1419 BU326 BU100 MJ*15033 2N6277
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV21 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min. = 20 at IC = 12 A
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BUV21
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N6488
BU108
transistor Bc 574
2n6107 MOTOROLA
2SC1943
MJ3055 to220
2SC1419
BU326
BU100
MJ*15033
2N6277
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pin configuration transistor bd140
Abstract: 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139
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BD136
BD138
BD140
BD140-10
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
pin configuration transistor bd140
2SD669 equivalent
BUV44
bd140 equivalent transistor
MJE15020
bd140 equivalent
BD250C EQUIVALENT
RCA122
2N6045 NPN POWER DARLINGTON
TRANSISTOR BD 136
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BU108
Abstract: BC337 circuit example BC337 rbe BDX54 replacement transistor BC337 BU326 BU100 MOTOROLA 2N3773
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU522B High Voltage Silicon Power Darlingtons 7 AMPERES DARLINGTON POWER TRANSISTORS NPN SILICON 450 VOLTS 75 WATTS Power Transistor mainly intended for use as ignition circuit output transistor. • Specified minimum sustaining voltage:
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BU522B
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N6488
BU108
BC337 circuit example
BC337 rbe
BDX54
replacement transistor BC337
BU326
BU100
MOTOROLA 2N3773
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tip122 tip127 audio amp
Abstract: BU108 K 3569 D44H1 tip120 MJ1302A equivalent 2SB595 BDX54 BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ3281A* PNP MJ1302A* Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS The MJ3281A and MJ1302A are PowerBase power transistors for high power
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MJ3281A
MJ1302A
MJ3281A*
MJ1302A*
204AA
TIP73B
TIP74
TIP74A
TIP74B
TIP75
tip122 tip127 audio amp
BU108
K 3569
D44H1
tip120
MJ1302A equivalent
2SB595
BDX54
BU326
BU100
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Motorola transistor 388 TO-204AA
Abstract: 714 ic BC 458 2SC124 BU108 BU326 2SA1046 2SC7 BDX54 2SD214
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6030 thru 2N6031 See 2N5630 Plastic Darlington Complementary Silicon Power Transistors PNP 2N6035 . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —
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2N6030
2N6031
2N5630)
2N6035,
2N6038
2N6036,
2N6039
225AA
2N6035
2N6036*
Motorola transistor 388 TO-204AA
714 ic
BC 458
2SC124
BU108
BU326
2SA1046
2SC7
BDX54
2SD214
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mj11015 equivalent
Abstract: MJ11016 equivalent 2SC1096 equivalent nsd15 MJ3237 BU108 BD875 equivalent MJ4502 EQUIVALENT 2SD718 2sb688 amplifier schematic SDN6000
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 Min @ IC – 20 Adc • Monolithic Construction with Built–in Base Emitter Shunt Resistor
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TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N6488
2N6490
mj11015 equivalent
MJ11016 equivalent
2SC1096 equivalent
nsd15
MJ3237
BU108
BD875 equivalent
MJ4502 EQUIVALENT
2SD718 2sb688 amplifier schematic
SDN6000
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2N6124
Abstract: 334 bdw93c 2n4920R BU108 2SA1046 2N4920 TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT 2SA981 equivalent BU806 Complement BDX54
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N4918 thru 2N4920* Medium-Power Plastic PNP Silicon Transistors . . . designed for driver circuits, switching, and amplifier applications. These high–performance plastic devices feature: *Motorola Preferred Device • Low Saturation Voltage — VCE sat = 0.6 Vdc (Max) @ IC = 1.0 Amp
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2N4921,
2N4922,
2N4923
2N4918
2N4920*
TIP73B
TIP74
TIP74A
TIP74B
TIP75
2N6124
334 bdw93c
2n4920R
BU108
2SA1046
2N4920
TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT
2SA981 equivalent
BU806 Complement
BDX54
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Motorola transistors MJE3055 TO 127
Abstract: MJE1092 transistors 2sd673 2SC1419 transistor MJE6043 BU124 MJW16010 BD590 2SB654 bdw93c pin configuration
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN D44VH PNP D45VH Complementary Silicon Power Transistors These complementary silicon power transistors are designed for high–speed switching applications, such as switching regulators and high frequency inverters.
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D44VH
D45VH
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
Motorola transistors MJE3055 TO 127
MJE1092
transistors 2sd673
2SC1419
transistor MJE6043
BU124
MJW16010
BD590
2SB654
bdw93c pin configuration
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