BDW93C
Abstract: bdw93c applications BDW93B BDW94C BDW93C PNP BDW94B malaysia bdw93c
Text: BDW93B/BDW93C BDW94B/BDW94C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The BDW93B, and BDW93C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They
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BDW93B/BDW93C
BDW94B/BDW94C
BDW93B,
BDW93C
O-220
BDW94B
BDW94C
O-220
BDW93B
BDW93C
bdw93c applications
BDW93B
BDW93C PNP
BDW94B
malaysia bdw93c
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BDW93C
Abstract: bdw93c applications BDW94B BDW94C BDW93C TRANSISTOR malaysia bdw93c
Text: BDW93C BDW94B/BDW94C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT
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BDW93C
BDW94B/BDW94C
BDW93C
O-220
BDW94C.
BDW94B
O-220
BDW93or
bdw93c applications
BDW94C
BDW93C TRANSISTOR
malaysia bdw93c
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bdw93c applications
Abstract: BDW93C BDW94B BDW94C
Text: BDW93C BDW94B/BDW94C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIAL
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BDW93C
BDW94B/BDW94C
BDW93C
O-220
BDW94C.
BDW94B
O-220
bdw93c applications
BDW94C
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BDW93C
Abstract: BDW94C BDW94B NPN/bow 94c bdw93c applications
Text: BDW93C BDW94B/BDW94C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIAL
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BDW93C
BDW94B/BDW94C
BDW93C
O-220
BDW94C.
BDW94B
O-220
BDW94C
NPN/bow 94c
bdw93c applications
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BDW94B
Abstract: NPN/bow 94c BDW93C bdw93c applications BDW93C PNP BDW94C 94B DIODE
Text: BDW93C BDW94B/BDW94C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIAL
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BDW93C
BDW94B/BDW94C
BDW93C
O-220
BDW94C.
BDW94B
O-220
NPN/bow 94c
bdw93c applications
BDW93C PNP
BDW94C
94B DIODE
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BDW 65 C
Abstract: BDW93C 94B DIODE BDW94B BDW94C BDW93B bdw93c applications Darlington npn
Text: BDW93B/BDW93C BDW94B/BDW94C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT
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BDW93B/BDW93C
BDW94B/BDW94C
BDW93B,
BDW93C
O-220
BDW94B
BDW94C
O-220
BDW 65 C
94B DIODE
BDW94B
BDW93B
bdw93c applications
Darlington npn
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Untitled
Abstract: No abstract text available
Text: BDW94/C PNP Epitaxial Silicon Transistor BDW94/C PNP Epitaxial Silicon Transistor Power Linear and Switching Application • Power Darlington TR • Complement to BDW93 and BDW93C Respectively 1 1.Base Absolute Maximum Ratings Symbol VCBO VCEO TO-220 2.Collector
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BDW94/C
BDW94/C
BDW93
BDW93C
O-220
BDW94
BDW94C
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BDW94
Abstract: BDW93C BDW93 BDW93B BDW94B BDW94C BDW93C PNP
Text: BDW93, BDW94 Darlington Transistors Features: • Collector-Emitter sustaining voltageVCEO sus = 80V (Minimum) - BDW93B, BDW94B = 100V (Minimum) - BDW93C, BDW94C • Collector-Emitter saturation voltage VCE(sat) = 2.0V (Maximum) at IC = 5.0A • Monolithic construction with Built-in Base-Emitter shunt resistor.
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BDW93,
BDW94
BDW93B,
BDW94B
BDW93C,
BDW94C
BDW93B
BDW93C
BDW94
BDW93C
BDW93
BDW93B
BDW94B
BDW94C
BDW93C PNP
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BDW93
Abstract: BDW93C BDW94 BDW94A BDW94B BDW94C
Text: BDW94/C PNP Epitaxial Silicon Transistor Power Linear and Switching Application • Power Darlington TR • Complement to BDW93 and BDW93C Respectively 1 1.Base Absolute Maximum Ratings Symbol VCBO VCEO TO-220 2.Collector 3.Emitter Ta = 25°C unless otherwise noted
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BDW94/C
BDW93
BDW93C
O-220
BDW94
BDW94C
BDW94/C
BDW94
BDW94A
BDW94B
BDW94C
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Untitled
Abstract: No abstract text available
Text: BDW94/C PNP Epitaxial Silicon Transistor Power Linear and Switching Application • Power Darlington TR • Complement to BDW93 and BDW93C Respectively 1 1.Base Absolute Maximum Ratings Symbol VCBO VCEO TO-220 2.Collector 3.Emitter Ta = 25°C unless otherwise noted
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BDW94/C
BDW93
BDW93C
O-220
BDW94
BDW94C
BDW94/C
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BDW94B
Abstract: BDW93C PNP BDW93B BDW93 BDW93C BDW94 BDW94C bdw93c applications DARLINGTON 30A 100V npn Complementary Darlington current Amplifier
Text: BDW93, BDW94 Series Darlington Transistors Features: Designed for general-purpose amplifier and low speed switching applications. • Collector-emitter sustaining voltage-VCEO sus = 80V (Minimum) - BDW93B, BDW94B 100V (Minimum) - BDW93C, BDW94C • Collector-emitter saturation voltage-VCE (sat) = 2.0V (Maximum) at IC = 5.0A.
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BDW93,
BDW94
BDW93B,
BDW94B
BDW93C,
BDW94C
BDW94B
BDW93C PNP
BDW93B
BDW93
BDW93C
BDW94C
bdw93c applications
DARLINGTON 30A 100V npn
Complementary Darlington current Amplifier
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BDW94
Abstract: No abstract text available
Text: BDW94/A/B/C BDW94/A/B/C Power Linear and Switching Applications • Power Darlington TR • Complement to BDW93, BDW93A, BDW93B and BDW93C respectively 1 TO-220 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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BDW94/A/B/C
BDW93,
BDW93A,
BDW93B
BDW93C
O-220
BDW94
BDW94A
BDW94B
BDW94
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BDW94
Abstract: BDW93 BDW93A BDW93B BDW93C BDW94A BDW94B BDW94C dsa001364
Text: BDW94/A/B/C BDW94/A/B/C Power Linear and Switching Applications • Power Darlington TR • Complement to BDW93, BDW93A, BDW93B and BDW93C respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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BDW94/A/B/C
BDW93,
BDW93A,
BDW93B
BDW93C
O-220
BDW94
BDW94A
BDW94B
BDW94
BDW93
BDW93A
BDW94A
BDW94B
BDW94C
dsa001364
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Untitled
Abstract: No abstract text available
Text: BDW93C Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)12 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100uÌ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.750
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BDW93C
Freq20M
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24ae
Abstract: dw94c DW93 W94B dw94
Text: SGS-THOMSON RfflDm IILIOra©iDOi BDW93B/BDW93C BDW94B/BDW94C COMPLEMENTARY SILICON POWER _ DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The BDW93B, and BDW93C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are
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BDW93B/BDW93C
BDW94B/BDW94C
BDW93B,
BDW93C
T0-220
BDW94B
BDW94C
24ae
dw94c
DW93
W94B
dw94
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dw94c
Abstract: No abstract text available
Text: BDW93C BDW94B/BDW94C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • STMicroelectronics PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS . LINEARAND SWITCHING INDUSTRIAL EQUIPMENT
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BDW93C
BDW94B/BDW94C
BDW93C
T0-220
BDW94C.
BDW94B
dw94c
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dw94c
Abstract: No abstract text available
Text: SGS-THOMSON BDW93B/BDW93C BDW94B/BDW94C IMDOæilLieTOOliïinei COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS . LINEAR AND SWITCHING INDUSTRIAL
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BDW93B/BDW93C
BDW94B/BDW94C
BDW93B,
BDW93C
T0-220
BDW94B
BDW94C
dw94c
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transistor BDW94C
Abstract: BDW94 BDW94C
Text: BDW94/A/B/C PNP EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR POWER LINEAR AND SWITCHING APPLICATIONS . Complement to BDW93.BDW93A, BDW93B and BDW93C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Emitter Voltage Symbol BDW94 Rating -45
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BDW94/A/B/C
BDW93
BDW93A,
BDW93B
BDW93C
BDW94
BDW94A
BDW94B
BDW94C
transistor BDW94C
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Untitled
Abstract: No abstract text available
Text: BDW94/A/B/C PNP EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BDW93, BDW93A, BDW93B and BDW93C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Emitter Voltage Collector Emitter Voltage
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BDW94/A/B/C
BDW93,
BDW93A,
BDW93B
BDW93C
BDW94
BDW94A
BDW94B
BDW94C
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BDW94
Abstract: BDW93 BDW93A BDW93B BDW93C BDW94A BDW94B BDW94C bdw93c applications
Text: Ü& MOS PEC DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS NPN BDW93 BDW93A BDW93B BDW93C .designed for general-purpose amplifier and low speed switching applications FEATURES: * Collector-Emitter Sustaining VoltageVCEO sus = 45 V (Min) - BDW93.BDW94
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BDW93
BDW94
BDW93A,
BDW94A
BDW93B
BDW94B
BDW93C
BDW94C
BDW94
BDW93A
BDW94A
BDW94B
BDW94C
bdw93c applications
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94B DIODE
Abstract: BDw 32 w94C
Text: BDW94/A/B/C PNP EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR POWER LINEAR AND SWITCHING APPLICATIONS TO-220 • Complement to BDW93, BDW93A, BDW93B and BDW93C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit BDW 94 BDW 94A BDW 94B
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BDW94/A/B/C
BDW93,
BDW93A,
BDW93B
BDW93C
O-220
300fiS,
94B DIODE
BDw 32
w94C
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Untitled
Abstract: No abstract text available
Text: r Z 7 SG S-TH O M SO N ^ 7 # &W^@lLl §ir[RMO(gS BDW93/A/B/C BDW94/A/B/C NPN/PNP POWER DARLINGTONS DESCRIPTION The BDW93, BDW93A, BDW93Band BDW93C are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are intended for use
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BDW93/A/B/C
BDW94/A/B/C
BDW93,
BDW93A,
BDW93Band
BDW93C
O-220
BDW94,
BDW94A,
BDW94B
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BOW93B
Abstract: No abstract text available
Text: SGSTHOM SON « im iC T i G l S B D W 9 3 B /B D W 9 3 C B D W 9 4 B /B D W 9 4 C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE A P P L IC A T IO N S
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BDW93B,
BDW93C
O-220
BDW94B
BDW94C
O-220
BDW93B/BDW93C/BDW94B/BDW94C
BOW93B
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BDW93
Abstract: No abstract text available
Text: BDW93/A/B/C NPN EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATIONS TO -220 • Complement to BDW94, BDW94A, BDW94B and BDW94C respectively ABSOLUTE MAXIMUM RATINGS 4 Ï ' Characteristic C o lle cto r Base Voltage
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BDW93/A/B/C
BDW94,
BDW94A,
BDW94B
BDW94C
BDW93
BDW93A
BDW93B
BDW93C
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