BDX18
Abstract: BDX18N
Text: BDX18 – BDX18N PNP SILICON TRANSISTOR EPITAXIAL BASE LF Large Signal Power Amplification High Current Switching Suitable for : Series and shunt regulators High Fidelity Amplifiers Power-switching circuits ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit
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BDX18
BDX18N
BDX18
BDX18N
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BDX18
Abstract: BDX18N
Text: BDX18 – BDX18N PNP SILICON TRANSISTOR EPITAXIAL BASE LF Large Signal Power Amplification High Current Switching Suitable for : Series and shunt regulators High Fidelity Amplifiers Power-switching circuits ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit
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BDX18
BDX18N
BDX18
BDX18N
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BDX18
Abstract: No abstract text available
Text: BDX18 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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BDX18
O204AA)
31-Jul-02
BDX18
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Untitled
Abstract: No abstract text available
Text: BDX18 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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BDX18
O204AA)
18-Jun-02
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BDX18
Abstract: No abstract text available
Text: BDX18 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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BDX18
O204AA)
16-Jul-02
BDX18
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BDY38
Abstract: 2N3055HV BDY20 BU326A 2N3055 bu326 2N3773 2N4347 2N6253 2N6257
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-3 Metal Can Package 3 All dimensions are in mm. PIN CONFIGURATION 1. BASE 2. EMITTER 3. COLLECTOR 2 1 TO-3 Power Package Transistors NPN Maximum Ratings Type No.
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2N3055
BDX18
CDP055
MJ2955
BDY38
2N3055HV
BDY20
BU326A
2N3055
bu326
2N3773
2N4347
2N6253
2N6257
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TRANSISTOR BC337 SMD
Abstract: transistor BC170 C5198 CDIL 2N2222A Transistor bd139 smd bc337 SMD PACKAGE bd140 SMD equivalent BC109 BC184 BC549 a1941 CDIL BD139
Text: • Transistors • • • • • Small Signal Medium Power Power Darlington MOSFET CDIL Semiconductors ~ Worldwide Reach Product Profile Transistors Product Range • • Chips/Dice – Diffused Silicon Wafers Surface Mount and Leaded Semiconductor Devices
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MPSA45
P2N2369
PN2222
MPSA05
MPSA55
P2N2369A
PN2222A
MPS2907A
MPSA06
MPSA56
TRANSISTOR BC337 SMD
transistor BC170
C5198
CDIL 2N2222A Transistor
bd139 smd
bc337 SMD PACKAGE
bd140 SMD equivalent
BC109 BC184 BC549
a1941
CDIL BD139
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SM2174
Abstract: SM2184 2N3055H MOTOROLA 2SD878 mj2955 TO-218 BDY73 BD130 BDY20 2SD151 2SA1042
Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO on PD Max hFE *T ON) Min (Hz) >CBO t0N r Max Max (A) (8) Max (Ohms) (CE)sat Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15
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BDT56
BDT58
BD907
BD908
MJE1291
MJE1661
SM2174
SM2184
2N3055H MOTOROLA
2SD878
mj2955 TO-218
BDY73
BD130
BDY20
2SD151
2SA1042
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BUV48I
Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable
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2N3016
2N3021
2N3022
2N3023
2N3024
2N3025
2N3026
2N3055
2N3076
2N3171
BUV48I
BU808DXI
BD699
buv18a
BD241CFI
transistor 2SA1046
BUW52I
BU808DFI equivalent
BU724AS
2SA1046
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BUW52I
Abstract: BU808d STI-3007 STI3007 BU941ZP BDW91 STI3005 BUT72I BSS44 S2000A
Text: TRANSISTORS POWER BIPOLAR HORIZONTAL DEFLECTION VCEO VCBO IC Ptot Resistive Switching Typical application Package Type V BU808DFI* BUH315 BUH315D THD218DHI THD277HI BU508AFI BU508DFI S2000AFI THD219HI BU508A BU508D BU208A BU208D BUH615D THD215HI BUH1015HI
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BU808DFI*
BUH315
BUH315D
THD218DHI
THD277HI
BU508AFI
BU508DFI
S2000AFI
THD219HI
BU508A
BUW52I
BU808d
STI-3007
STI3007
BU941ZP
BDW91
STI3005
BUT72I
BSS44
S2000A
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pin configuration transistor BC547 smd packaging
Abstract: BC547 smd packaging BD469 C2N3904 c5198 CMJE2955T transistor mcr100-8 BC337 TO-92 Generic DIAC DB2 BC337 hie hre hfe
Text: Quick Reference Data Chip/Dice – Diffused Silicon Wafers Surface Mount Devices Leaded Semiconductor Devices Electronic Manufacturing Services Switching Diodes & Arrays Schottky Barrier Diodes Zener Diodes Rectifiers Small Signal Transistors Medium Power Transistors
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DO-35
DO-41
C-120
0406-3K
pin configuration transistor BC547 smd packaging
BC547 smd packaging
BD469
C2N3904
c5198
CMJE2955T
transistor mcr100-8
BC337 TO-92 Generic
DIAC DB2
BC337 hie hre hfe
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MJE494
Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS
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BD157
BD158
BD159
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
MJE494
2SC1419
BD 804
2SD675
MJE104
BD581
BD135 CURVES
MJ1000
DTS-4041
2N5037
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mje521 equivalent
Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry
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MJE521
MJE371
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
mje521 equivalent
BU108
2N3055 plastic
2N6488 MOTOROLA
Motorola transistors MJE3055 TO 127
3904 Transistor
BDX54
tip122 tip127 audio amp
BU326
BU100
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BD179-10 equivalent
Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
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BD179
BD180
BD179-10
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
BD179-10 equivalent
BU108
2SA1046
2SC7
BDX54
BUX98A
BU326
BU100
bul1
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pin configuration transistor bd140
Abstract: 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139
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BD136
BD138
BD140
BD140-10
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
pin configuration transistor bd140
2SD669 equivalent
BUV44
bd140 equivalent transistor
MJE15020
bd140 equivalent
BD250C EQUIVALENT
RCA122
2N6045 NPN POWER DARLINGTON
TRANSISTOR BD 136
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2N6124
Abstract: 334 bdw93c 2n4920R BU108 2SA1046 2N4920 TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT 2SA981 equivalent BU806 Complement BDX54
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N4918 thru 2N4920* Medium-Power Plastic PNP Silicon Transistors . . . designed for driver circuits, switching, and amplifier applications. These high–performance plastic devices feature: *Motorola Preferred Device • Low Saturation Voltage — VCE sat = 0.6 Vdc (Max) @ IC = 1.0 Amp
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2N4921,
2N4922,
2N4923
2N4918
2N4920*
TIP73B
TIP74
TIP74A
TIP74B
TIP75
2N6124
334 bdw93c
2n4920R
BU108
2SA1046
2N4920
TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT
2SA981 equivalent
BU806 Complement
BDX54
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bdx54c equivalent
Abstract: BOX 53C darlington power transistor tip122 D-PAK package All similar transistor 2sa715 BDX53C MOTOROLA BU108 transistor tip31 AMPLIFIER 2SD718 2sb688 schematic BDX54 2N386
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors NPN BDX53B BDX53C PNP . . . designed for general–purpose amplifier and low–speed switching applications. BDX54B • High DC Current Gain — hFE = 2500 Typ @ IC = 4.0 Adc
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BDX53B,
BDX53C,
220AB
BDX53B
BDX53C
BDX54B
BDX54C
TIP73B
TIP74
TIP74A
bdx54c equivalent
BOX 53C darlington power transistor
tip122 D-PAK package
All similar transistor 2sa715
BDX53C MOTOROLA
BU108
transistor tip31
AMPLIFIER 2SD718 2sb688 schematic
BDX54
2N386
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TIP34C equivalent
Abstract: BU108 TRANSISTOR BC 384 5D2 6 BUV11 equivalent BDX54 2N3025 equivalent BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV11 SWITCHMODE Series NPN Silicon Power Transistor 20 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 150 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain; hFE min. = 20 at IC = 6 A
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BUV11
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N6488
TIP34C equivalent
BU108
TRANSISTOR BC 384
5D2 6
BUV11 equivalent
BDX54
2N3025 equivalent
BU326
BU100
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MJ2955
Abstract: MJ2955 300 watts amplifier BDX18 bdx18 me distan U007 L100 J BDX18 33z3
Text: G E SOLID STATE 3875081 G E SOL ID S TATE Pro Electron Power Transistors _ 01 ]>F| 3fl7S0fll 0017557 T 01Ë" 17557 D r - i J ' - 2-? BDX18, MJ2955 Silicon P-N-P Epitaxial-Base High-Power Transistors File Number 994 TERMINAL DESIGNATIONS Rugged, Broadly A pplicable Devices
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BDX18,
MJ2955
O-220AB
RCA-BDX18
MJ2955
BDX18
MJ295S.
92CS-2
001LECTOR-TO-EMITTER
290Q7
MJ2955 300 watts amplifier
bdx18 me
distan
U007
L100
J BDX18
33z3
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bdx32
Abstract: bdx65b
Text: SEMELAB LTD 37E ]> Ö1331Ö7 0DD004b M •SMLB T - 3 3 -¿>/ Type No. Option'1*^ Polari'y Package v CEO BDX14 BDX16 BDX18 BDX20 BDX27 HI-REL HI-REL SCREEN SCREEN HI-REL PNP PNP PNP PNP PNP * * BDX28 BDX29 BDX30 BDX31 BDX32 HI-REL HI-REL HI-REL PNP PNP PNP
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0DD004b
BDX14
BDX16
BDX18
BDX20
BDX27
BDX28
BDX29
BDX30
BDX31
bdx32
bdx65b
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MJ2955
Abstract: BDX18 J BDX18 BDX18A
Text: G E SOLID STATE 38 75 081 01 G E SOL ID S TATE Pro Electron Power Transistors _ ]>F| 3fl7S0fll 0017557 T 0 1 Ë" 17557 D r - i J ' - 2-? BDX18, MJ2955 File Number Silicon P -N -P Epitaxial-Base High-Pow er Transistors 994 TERMINAL DESIGNATIONS R u g g e d , B ro ad ly A p p lic a b le D evices
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BDX18,
MJ2955
O-220AB
RCA-BDX18
MJ2955
BDX18
J BDX18
BDX18A
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2N4211
Abstract: 2N5872 2N1936 2N1937 2N3265 2N3266 2N3597 2N3598 2N3599 2N4210
Text: ”04 e-C g4Wæ~DlODE T R A M S ïS T O R C O DE |Efl4fl3S2 0 D 0 D 1 3 0 T INC 64 D 00 1 3 0 ~ D T-33-13 ~ D1QDE TRANSISTOR CQ.,1 \IC. (201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201-575-5863 NPNTO-63 PNP
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0D0D130
T-33-13
mDDETMI\l515TDRCCLiniC.
NPNTO-63
2N1936
2N1937
2N3265
2N3266
2N3597
2N6246
2N4211
2N5872
2N1936
2N1937
2N3265
2N3266
2N3597
2N3598
2N3599
2N4210
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DIODE 2N4002
Abstract: BD314 100-01A 2N5872 2N1936 2N1937 2N3265 2N3266 2N3597 2N3598
Text: ^4 CöT833~2^DTÖTTE T R A N S I S T O R .CO INCT DE | E f l M f l 3 Sa Ö4D IID0D13D 1 00130 D ^ T -3 3 -1 3 D1QDE TRANSISTOR CQ.1WC. (201 686-0400 • Telex: 139-385 • Outside N Y & NJ area call T O LL F R E E 800-526-4581 FA X No. 201-575-5863 N P N T O -6 3
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T-33-13
NPNTO-63
2N1936
2N1937
2N3265
2N3266
2N3597
2N3598
2N3599
2N4210
DIODE 2N4002
BD314
100-01A
2N5872
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B0411
Abstract: B0733 THD200F1 dk52 2SC4977 2N5415 REPLACEMENT TIP 2n3055 BD68D SGS-Thomson cross reference BUX37 THOMSON
Text: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSOH SGS-THOMSON PAGE REPLACEMENT NEAREST PREFERRED KDUSTHY STANDARD 2N3016 2N5339 93 2N3772 2N3021 BDW52C 169 2N3789 2N3022 BDW52C BDW52C BDW52C 169 169 169 2N3790 2N3791 2N3792 BDW52C BDW52C 169 169 77 2N3863 2N3864
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2N3016
2N3021
2N3022
2N3023
2N3024
2N3025
2N3026
2N3055
2N3076
2N3171
B0411
B0733
THD200F1
dk52
2SC4977
2N5415 REPLACEMENT
TIP 2n3055
BD68D
SGS-Thomson cross reference
BUX37 THOMSON
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