Contextual Info: BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX34, BDX34A, BDX34B, BDX34C and BDX34D ● 70 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A

Box 34C

Abstract: BDX 34C pnp box 34b BDX33 BDX33A BDX33B BDX33C BDX34 BDX34A BDX34B
Contextual Info: BDX33, BDX33A, BDX33B, BDX33C BDX34, BDX34A, BDX34B, BDX34C f l . BDX33, A, B, C BDX34, A, B, C NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Darlington for Linear Switching Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER

BDX34C

Contextual Info: BDX34/A/B/C BDX34/A/B/C Power Linear and Switching Applications • High Gain General Purpose • Power Darlington TR • Complement to BDX33/33A/33B/33C respectively 1 TO-220 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

transistor bdx54

Abstract: BDX34 BDX34BTU
Contextual Info: BDX34/A/B/C BDX34/A/B/C Power Linear and Switching Applications • High Gain General Purpose • Power Darlington TR • Complement to BDX33/33A/33B/33C respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

BDX33 application notes

Abstract: bdx33c bdx33
Contextual Info: BDX33/A/B/C BDX33/A/B/C Power Linear and Switching Applications • High Gain General Purpose • Power Darlington TR • Complement to BDX34/34A/34B/34C respectively TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

BDX33

Abstract: BDX34C BDX33A BDX33B BDX33C BDX34 BDX34A BDX34B T-801 k 30 transistor
Contextual Info: E lMOSPEC DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS NPN PNP BDX33 BDX33A BDX33B BDX33C .designed for general-purpose amplifier and low speed switching applications FEATURES: * Coliector-Emitter Sustaining VoltageVcEopus, = 45 V Min - BDX33.BDX34

bdx34

Abstract: BDX34A
Contextual Info: BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX33, BDX33A, BDX33B, BDX33C and BDX33D ● 70 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A

TC100

Contextual Info: MCC BDX33 THRU BDX33D
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 0,9:708 • • • • Designed For Complementary Use with BDX34, BDX34A, BDX34B, BDX34C and BDX34D 70W at 25 Cass Temperature

bdx33d

Contextual Info: MCC BDX33 THRU BDX33D
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 0,9:708 • • • • Designed For Complementary Use with BDX34, BDX34A, BDX34B, BDX34C and BDX34D 70W at 25 Cass Temperature

Contextual Info: SG S-TH O M SO N lü3D SI^@lliyiiSin^@lDCl BDX33A/33B/33C B DX34A/34 B/34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . DBX33B, BDX33C, BDX34B AND BDX34C ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in

Contextual Info: • TqgqSB? D056M57 5 ■ " T '3 3>-Z.°\ f Z T SGS-THOMSON BDX33/33A/33B/33C ^ 7 # MÛi [i[Li©ir[B ô [MQ©S BDX34/34A/34B/34C 3GE D S G S-THOMSON HIGH GAIN GENERAL PURPOSE DESC RIPTIO N The BDX33, BDX33A, BDX33B and BDX33C are silicon epitaxial-base NPN transistors in monolithic

transistor BDX34 65

Contextual Info: BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • AUG UST 1993 - REVISED MARCH 1997 Designed for Complementary Use with BDX34, BDX34A, BDX34B, BDX34C and BDX34D • 70 W at 25°C Case Temperature

BDX34C

Abstract: BDX34A
Contextual Info: BDX34/A/B/C PNP EPITAXIAL SILICON TRANSISTOR HIGH GAIN GENERAL PURPOSE POWER DARLINGTON TR POWER LINEAR AND SWITCHING APPLICATIONS • Complement to B DX33/33A/33B/33C respectively ABSOLUTE MAXIMUM RATINGS Characteristic C ollecto r Base Voltage C ollecto r E m itter Voltage

bdx34c

Abstract: bdx34
Contextual Info: BDX34/A/B/C PNP EPITAXIAL SILICON TRANSISTOR HIGH GAIN GENERAL PURPOSE POWER DARLINGTON TR POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BDX33/33A/33B/33C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector Base BDX34 VcBO Collector Emitter Voltage

BDX33C

Abstract: BDX34B BDX34C BDX33B BDX33
Contextual Info: BDX33B/33C BDX34B/34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They

BDX330

Abstract: BDX338 8DX33 BOX33B BOX33 TRANSISTOR BDX330 8DX33B B0X33 BOX33D bdx33d on
Contextual Info: B0X33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations United, UK_ • Designed lor Complementary Use with BDX34, BDX34A, BDX34B, BDX34C and BDX34D • 70 W at 25°C Case Temperature

BDX33C

Contextual Info: BDX33B, BDX33C NPN BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0 • Collector−Emitter Sustaining Voltage at 100 mAdc

BDX34C

Abstract: BDX34A BDX34 BDX34D BDX33 BDX33A BDX33B BDX33C BDX33D BDX34B
Contextual Info: BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX33, BDX33A, BDX33B, BDX33C and BDX33D ● 70 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A

TCA 965 B

Contextual Info: PIMP SILICON POWER DARLINGTON BDX34 SERIES • 70 W at 25 C Case Temperature • 10 A Rated Collector Current • Min hpg of 750 3 A/3 V mechanical data TH E COLLECTOR IS IN ELECTRICAL CONTACT WITH THE MOUNTING TAB ia71 T H IS P O R T IO N O F r*— LEA O S F R E E O F FLA SH

Contextual Info: BDX33B BDX33C BDX34B BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION The BDX33B and BDX33C are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented

Contextual Info: ON Semiconductor NPN Darlington Complementary Silicon Power Transistors BDX33B BDX33C* . . . designed for general purpose and low speed switching applications. PNP BDX34B * BDX34C • High DC Current Gain — • • • • hFE = 2500 typ.) at IC = 4.0

BDX34 equivalent

Abstract: bdx33c BDX33 BDX33B BDX34 BDX34B BDX34C BDX33A BDX34A
Contextual Info: NPN BDX33 – BDX33A – BDX33B – BDX33C PNP BDX34 – BDX34A – BDX34B – BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO220 plastic package.

BDX33

Abstract: BDX33C BDX33B BDX33A bdx33 npn bdx34
Contextual Info: SavantIC Semiconductor Product Specification BDX33/A/B/C Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High DC current gain ·DARLINGTON ·Complement to type BDX34/A/B/C APPLICATIONS ·For power linear and switching applications PINNING

BDX43C

Contextual Info: BDX34, BDX34A, BDX34B, BDX34C, BDX34D HARRIS SEMICOND SECTOR SbE P • File Number 694 4302271 0 0 4 0 ^ 7 T52 « H A S 10-Ampere P-N-P Darlington Power Transistors T -3 3 -3 1 TERMINAL DESIGNATIONS 45-60-80-100-120 Volts, 70 Watts Gain of 750 at 4 A BDX34, BDX34A