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    BDY 12 Search Results

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    BDY 12 Price and Stock

    Vishay Intertechnologies DG212BDY-E3

    Analog Switch ICs SOIC-16 ANLOG SWTCH QUAD SPST
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics DG212BDY-E3 11,843
    • 1 $1.64
    • 10 $1.24
    • 100 $1.11
    • 1000 $1.1
    • 10000 $1.06
    Buy Now

    Vishay Intertechnologies DG212BDY-T1-E3

    Analog Switch ICs Quad SPST 22/25V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics DG212BDY-T1-E3 4,574
    • 1 $2.36
    • 10 $1.7
    • 100 $1.32
    • 1000 $1.19
    • 10000 $1.16
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    BDY 12 Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BDY12 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BDY12 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BDY12 Unknown Transistor Replacements Scan PDF
    BDY12 Unknown Transistor Replacements Scan PDF
    BDY12 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BDY12 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BDY12 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BDY12 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BDY12 Semelab NPN Transistors Scan PDF
    BDY12 Siemens NPN Silicon Planar Trnasistors - Pol=PNP / Pkg=SOT9 / Vceo=40 / Ic=5 / Hfe=40-100 / fT(Hz)=1M / Pwr(W)=70m Scan PDF
    BDY12 Siemens Semiconductor Manual, Discrete Industrial Types 1974 Scan PDF
    BDY12 Siemens Semiconductor Data Book (German) 1976/77 Scan PDF
    BDY12-10 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BDY12/10 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BDY12-10 Siemens NPN Silicon Planar Trnasistors Scan PDF
    BDY12-10 Siemens Semiconductor Data Book (German) 1976/77 Scan PDF
    BDY12-16 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BDY12/16 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BDY12-16 Siemens NPN Silicon Planar Trnasistors Scan PDF
    BDY12-16 Siemens Semiconductor Data Book (German) 1976/77 Scan PDF

    BDY 12 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ic TT 2222

    Abstract: BDY 11 TT 2222 npn TT 2222 bdy 12 Spannungsregler bdy42
    Text: W BDY 42 • BDY 43 • BDY 44 Silizium-NPN-Leistungstransistoren Silicon NPN Power Transistors A n w e ndungen: Spannungsregler, Inverter, getaktete Netzgeräte Applications: Voltage regulator, inverter, switching mode power supply Besondere M erkm ale: Features:


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    Untitled

    Abstract: No abstract text available
    Text: ^3natron P R O -E L E C T R O N P O W E R T R A N S IS T O R S DEVICE POLARITY IC cont. vCEO MAX AMPS MAX VOLTS TYPE BD 130 NPN 15.0 60 BD 142 NPN 15.0 45 BDY 20 NPN 1S.0 60 BDY 29 NPN 30.0 75 BDY 37 NPN 140 16.0 BDY 38 NPN 6.0 40 BDY 39 NPN 15.0 60 BDY 55 NPN


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    BDY13

    Abstract: Q62702-D378 Q62702-D378-V1 Q62702-D378-V2 BDV13 bdy12 bdy 12
    Text: 2SC D • ÔSBSbQS QQQHMBB T H S I E G NPN Silicon Planar Transistors SIEMENS AKTIENÛESELLSCHAF BDW 25 BDY 12 ° - BDY 13 433 BDW 25, BDY 12, and BDY 13 are epitaxial NPN silicon planar power transistors in SOT 9 case 9 A 2 DIN 41875 . The collector is electrically connected to the case.


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    Q62702-D378 Q62702-D378-V4 Q6270 BDY13 Q62702-D378-V1 Q62702-D378-V2 BDV13 bdy12 bdy 12 PDF

    E2B20

    Abstract: Transistor bdy 11 BDY88 BDY87 TRANSISTOR D131 transistor 1005 oj SWITCHING TRANSISTOR 60V BDY89 D129 D131
    Text: BDY 87, BDY 88, BDY 89 NPN Darlington stages for AF and switching applications BDY 87, BDY 88, and BDY 89 are hig h -p o w e red arid highly am plifying NPN o u tp u t stages for AF and s w itch in g applications. They consist of tw o single-diffused NPN transistor systems each in com pound connection in a case 9 A 4 DIN 41875 S O T-9


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    Q62702- Q62901 Q62901- BDY87 rcase-45Â E2B20 Transistor bdy 11 BDY88 BDY87 TRANSISTOR D131 transistor 1005 oj SWITCHING TRANSISTOR 60V BDY89 D129 D131 PDF

    BDW 16.24K5000-C2-5

    Abstract: No abstract text available
    Text: 2SC D • flSBSbQS DQQMMBB T H S I E 6 ot* NPN Silicon Planar Transistors BDW 25 BDY 12 SIEMENS AKTIENGESELLSCHAF 433 0-BDY 13 BDW 25, BDY 12, and BDY 13 are epitaxial NPN silicon planar power transistors in SOT 9 case 9 A 2 DIN 41875 . The collector is electrically connected to the case.


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    Q62702-D378 Q62702-D378-V4 Q62702-D378-V2 Q62702-D378-V1 Q60204-Y12 A23SbOS BDW 16.24K5000-C2-5 PDF

    bdy82

    Abstract: BDY83
    Text: BDY 82 BDY 83 PNP SILICON TRANSISTORS, EPITAXIAL BASE TR AN S IS TO R S PNP S IL IC IU M , B A S E E P IT A X IE E Compì, of BDY 80, BDY 81 PRELIM INARY DATA N O T IC E P R E L IM IN A IR E • LF large signal power amplification A m p lific a tio n B F grands sig naux de puissance


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    BDY82 O-220 drawingCB-117on CB-117 bdy82 BDY83 PDF

    185t2

    Abstract: bdy28 BF 184 184T2 BDY26 BDY27 185T2A 185T2B
    Text: * B D Y 2 6 183 T2 *B D Y 2 7 184 12 *B D Y 28 185 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA TRANSISTORS NPN SILICIUM , MESA DIFFUSES ^ Preferred device Dispositif recommandé LF large signal power amplification 180 V 200 V BDY 26 , 183 T2 BDY 27 , 184 T2


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    BDY26 BDY27 87-5W_ CB-19 185t2 bdy28 BF 184 184T2 185T2A 185T2B PDF

    bdy56

    Abstract: amplificateur BF amplificateur BF TCA BDY 56
    Text: * BDY 55 * BDY 56 NPN SILICON TRANSISTORS, DIFFUSED MESA TR A N S IS TO R S NPN S IL IC IU M , M ESA D IF F U S E S H* P referred device D is p o s itif recommandé • LF large signal power amplification Am plification B F grands signaux de puissance Commutation rapide fo rt courant


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    CB-19 bdy56 amplificateur BF amplificateur BF TCA BDY 56 PDF

    2N3442

    Abstract: Transistor bdy 11 BDY74 transistor 2N3 Y7427 Transistor BF 312 BDX20
    Text: * 2 I\I 3442 BDY 74 NPN SILICON TRANSISTOR, HOMOBASE T R A N S IS T O R N P N S IL IC IU M , H O M O B A S E 2N 3442 compì, o f BDX 20 Preferred device D is p o s itif recommandé • LF large signal power amplificateur 140 V 2N 3442 2 0 V BDY 74 V -«


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    CB-19 2N3442 Transistor bdy 11 BDY74 transistor 2N3 Y7427 Transistor BF 312 BDX20 PDF

    BDY79

    Abstract: 594 BC BDY78
    Text: * BDY 78 * BDY 79 NPN SILICON TRANSISTORS, DIFFUSED MESA T R A N S IS T O R S N P N S IL IC IU M , M E S A D I F F U S E S ^ Preferred device D isp ositif recommandé LF large signal power amplification A m p lific a tio n B F grands signaux de puissance


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    CB-72 tC35e BDY79 594 BC BDY78 PDF

    h21e

    Abstract: BDY80 BDY82 max-h21E BDY81
    Text: BDY 80 BDY 81 NPN S ILIC O N TR A N S IS TO R S , HOM O BASE TR AN S IS TO R S NPN S IL IC IU M , H O M O B ASE Compì, o f B D Y 82 - BD Y 83 - LF large signal power amplification A m p lific a tio n B F grands sig naux de puissance /3 5 V 5 0 V • Switching


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    O-220 CB-117 h21e BDY80 BDY82 max-h21E BDY81 PDF

    Untitled

    Abstract: No abstract text available
    Text: REVISION B HDBNC-J-P-X-RA-BHX-BDY 2.94±0.02 +0.02 5.40 - 0.03 DO NOT SCALE FROM THIS PRINT 0.00 3.55 - 0.03 3.35±0.03 1.75±0.03 TYPE -P: PCB 3.75 0.10 SECTION "A"-"A" TERMINATION -BH1: BULKHEAD THROUGH HOLE .062 BOARD -BH2: BULKHEAD THROUGH HOLE .093 BOARD


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    Untitled

    Abstract: No abstract text available
    Text: BDY 12 BDY13 Sta tisc h e Ken ndaten TQ = 25 °C Die Transistoren B D Y 12 und B D Y 13 werden bei /c = 1 A und UCE = 1 V nach der statischen Stromverstärkung gruppiert und mit Zahlen der DIN-R-5-Normenreihe gekenn­ zeichnet. Für folgende Arbeitspunkte gilt:


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    Untitled

    Abstract: No abstract text available
    Text: MHF1-P-C-X-RA-CA3 REVISION A DO NOT SCALE FROM THIS PRINT DESIGNED & DIMENSIONED IN MILLIMETERS[INCHES] GENDER -P: PLUG TYPE -C: CABLE TERMINATION -CA3: RG-081 CABLE ORIENTATION -RA: RIGHT ANGLE PLATING SPECIFICATIONS -H: HEAVY GOLD SEE NOTE 6 & 7 (MHF1-P-C-H-RA-CA3-BDY)


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    RG-081 PDF

    ESM750A

    Abstract: ESM750 esm952a BUW38 ESM952 BUX40 BUX48
    Text: o metal power transistors transistors de puissance métalliques THOMSON-CSF ç / 'B td + tr typ» max A (W) 1 (A) = 1,5V min I maxl •Caff* (V) * V CE Ul O > P to t O NPN ■c cont Ul v CEO VCEX* S Type (V) max (A) (A) (llS) switching transistors BDY 26(183


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    BUX48 CB-19 CB-159 CB-19) CB-159) ESM750A ESM750 esm952a BUW38 ESM952 BUX40 PDF

    Untitled

    Abstract: No abstract text available
    Text: REVISION F BNC7T-J-P-XX-ST-TH2D DESIGNED & DIMENSIONED IN MILLIMETERS[INCHES] DO NOT SCALE FROM THIS PRINT GENDER -J: JACK 10.92 .430 C TYPE -P: PCB 1.25 .049 2 PLCS 9.65 .380 REF PLATING SPECIFICATION -HN: HEAVY GOLD/NICKEL (SEE NOTES 6 & 7) (BNC7T-J-P-DN-ST-TH2-BDY-D)


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    75OHM PARMAR10/21/2009 PDF

    Untitled

    Abstract: No abstract text available
    Text: REVISION A BNC7T-J-P-XX-ST-TH1 DESIGNED & DIMENSIONED IN MILLIMETERS[INCHES] GENDER -J: JACK TYPE -P: PCB DO NOT SCALE FROM THIS PRINT 18.00 .709 REF 11.00 .433 REF 4.50 .177 REF E -GN: GOLD/NICKEL SEE NOTES 7 & 8 (BNC7T-J-P-N-ST-TH1-BDY) (BNC7T-J-P-ST-TH1-INS)


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    Untitled

    Abstract: No abstract text available
    Text: * BDY 53 * B D Y 54 NPN SILIC O N TR A N S IS TO R S , D IFFU SED MESA TRANSISTORS NPN S ILIC IU M , MESA DIFFUSES Preferred device D isp o sitif recommandé - LF or H F large signal a m p lifica tio n Am plification BF ou H F grands signaux 60 V 120 V - High speed switching


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    CB-19 PDF

    BDY12

    Abstract: BDY13 BDY12-10 BDY12-16 BDY12-6 BDY13-16 Q60204-Y13-D bcy13
    Text: BDY 12, B D Y 13 NPN Transistors for AF output stages and switching applications B D Y 1 2 and B D Y 1 3 are epitaxial N P N silicon planar power transistors in a case 9 A 2 D IN 41 875 SO T-9 . The collector is electrically connected to the case. In order that the transistors may be mounted insulated from the chassis, 1 mica disc


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    BDY13 BDY12 BDY13 BDY12-6 Q60204-Y12-B Q60204-Y13-C BDY12-10 Q60204-Y12-C BDY13-16 Q60204-Y13-D BDY12-16 Q60204-Y13-D bcy13 PDF

    3771

    Abstract: 2N3771 3772-BDY emetteur 3772 2n3772 N3771 sbru BDY76 AL710
    Text: *2 N 3771 *2 N 3772 * BDY 76 NPN SILICON TRANSISTORS, HOMOBASES T R A N S IS T O R S N P N S IL IC IU M , H O M O B A SE S Preferred device Dispositif recommandé • LF large signal power amplification 40 V 160 V (20 A \3 0 A 150 W VCEO Amplification B F grands signaux de puissance


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    2N3771 3772-BDY CB-19 3771 2N3771 emetteur 3772 2n3772 N3771 sbru BDY76 AL710 PDF

    Untitled

    Abstract: No abstract text available
    Text: mininm. I I •2. 1 2 6 * . 0 0 4 o o o o o o o o T OP VIE W P/N 797674-2 SHOWN BO T T OM VIE W 2 -mrI Q P IG IM L DRAW [MG PI N SIGNAL 1 2 3 4 5 6 7 a 9 10 1 12 3 14 IS 16 17 GND D3 D4 OS 06 07 CEI AIO se Al 1 A9 A8 A 13 A M Wl BDY/0SY VCC 797674-1 PI N S I G N A L


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    Transistor bdy 58

    Abstract: Tektronix 7603 BDY58 emetteur Tektronix
    Text: NPN SILIC O N TR A N S IS TO R S , D IF F U S E D MESA DUT J / BDY58 TR A N S IS TO R S NPN S IL IC IU M , M ESA D IF F U S E S LF large signal power amplification A m p lific a tio n B F grands signaux de puissance 8 0 V \ 125 V V CEO High current fast switching


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    BDY58 CB-19 Transistor bdy 58 Tektronix 7603 BDY58 emetteur Tektronix PDF

    emetteur

    Abstract: 2N3441 BDY72 3441 V560 2n 3441
    Text: *2 I\I 3441 *B D Y 7 2 NPN òlLICON TRANSISTORS, HOMOBASES T R A N S IS TO R S N P N S IL IC IU M , HO M O B A SE S 2N 3441 compì, of BDX 16 ^ Preferred device D is p o s itif recommandé LF large signal power amplification 140 V (120 V 3A CEO Am plification B F grands signaux de puissance


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    BDY72 Ali20 CB-72 emetteur 2N3441 BDY72 3441 V560 2n 3441 PDF

    BDY39

    Abstract: Scans-0078762 B-30 B-31 solitron devices blx BLX83 BD 104 NPN 185BD BDY38
    Text: - ^ o —— • _ _ SOLITROIM DEVICES INC [ ^ G W © ? © Ä 1T M TS dF | ä H b öb D S 0D D S7fib D | ^ T ’ J 3 ' û i . © 1


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