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    BDY24 Search Results

    BDY24 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BDY24 Comset Semiconductors NPN SILICON TRANSISTOR, DIFFUSED MESA Original PDF
    BDY24 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=90 / Ic=6 / Hfe=15-180 / fT(Hz)=10M / Pwr(W)=85 Original PDF
    BDY24 Iskra Power Silicon Transistors / Switching Transistors Scan PDF
    BDY24 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BDY24 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BDY24 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BDY24 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BDY24 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BDY24 Semico High Voltage Video Amplifiers / Television and Video Devices Scan PDF
    BDY24 SGS-Thomson Transistor Datasheet Scan PDF
    BDY24 Thomson-CSF Condensed Data Book 1977 Scan PDF
    BDY24 Thomson-CSF Power Transistor Data Book 1975 Scan PDF
    BDY24 Unitra Cemi Transistor - Pol=NPN / Pkg=TO3 / Vceo=90 / Ic=6 / Hfe=15-180 / fT(Hz)=10M / Pwr(W)=85 Scan PDF
    BDY24A Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BDY24B Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package Original PDF
    BDY24B Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BDY24C Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package Original PDF
    BDY24C Unknown Shortform Transistor Datasheet Guide Short Form PDF

    BDY24 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BDY24C

    Abstract: No abstract text available
    Text: BDY24C Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF BDY24C O204AA) 31-Jul-02 BDY24C

    Untitled

    Abstract: No abstract text available
    Text: BDY24C Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF BDY24C O204AA) 18-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: BDY24 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF BDY24 O204AA) 18-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRANSISTOR BDY24 • High Power • Hermetic TO-3 Metal Package • Ideally suited for Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO IC IB PD TJ


    Original
    PDF BDY24 O-204AA)

    BDY24B

    Abstract: No abstract text available
    Text: BDY24B Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF BDY24B O204AA) 31-Jul-02 BDY24B

    181T2

    Abstract: 182T2 180T2 BDY24 BDY23 BDY25 181T2 B
    Text: BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage


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    PDF BDY23, BDY24, BDY25, 180T2 181T2 182T2 181T2 182T2 180T2 BDY24 BDY23 BDY25 181T2 B

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRANSISTOR BDY24/A/B/C • High Power • Hermetic TO-3 Metal Package • Ideally suited for Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO IC IB


    Original
    PDF BDY24/A/B/C O-204AA)

    Untitled

    Abstract: No abstract text available
    Text: BDY24C Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF BDY24C O204AA) 16-Jul-02

    bdy24b

    Abstract: 10M45
    Text: BDY24B Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF BDY24B O204AA) 16-Jul-02 bdy24b 10M45

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRANSISTOR BDY24/A/B/C • High Power • Hermetic TO-3 Metal Package • Ideally suited for Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO IC IB


    Original
    PDF BDY24/A/B/C O-204AA)

    BDY24

    Abstract: No abstract text available
    Text: SILICON NPN TRANSISTOR BDY24 • High Power • Hermetic TO-3 Metal Package • Ideally suited for Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO IC IB PD TJ


    Original
    PDF BDY24 O-204AA) BDY24

    BDY24

    Abstract: No abstract text available
    Text: BDY24 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF BDY24 O204AA) 31-Jul-02 BDY24

    BDY25

    Abstract: BDY23 182T2 181T2 180T2 BDY24
    Text: BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage


    Original
    PDF BDY23, BDY24, BDY25, 180T2 181T2 182T2 BDY25 BDY23 182T2 181T2 180T2 BDY24

    10M45

    Abstract: No abstract text available
    Text: BDY24B Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF BDY24B O204AA) 18-Jun-02 10M45

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


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    PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    BDY11

    Abstract: BDY16 BDY77 BDY61 BDY47 BDY24 BDY29 BDY37 BDY12 BDY13
    Text: SEMELAB LTD B DY11 B DY12 BDY13 BDY16 BDY20 SC REEN HI-REL HI-REL HI-REL SC REEN NPN PNP NPN NPN N PN BDY23 BDY24 BDY25 BDY26 B DY27 SCREEN SC REEN SCREEN HI-REL HI-REL NPN NPN N PN N PN NPN BDY28 B DY29 B DY37 BDY38 BDY39 HI-REL HI-REL S C REEN S C REEN SC REEN


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    PDF BDY11 BDY12 BDY13 BDY16 BDY20 BDY23 BDY24 BDY25 BDY26 BDY27 BDY77 BDY61 BDY47 BDY29 BDY37

    BDY25

    Abstract: 180T2 181T2 182T2 BDY 11 T2140 BDY23 BDY24 p 181 V BDV25
    Text: *B D Y 23/I80T2 *BDY24 181T2 *B D Y 25,182 T2 NPN S IL IC O N T R A N S IS T O R S , D IF F U S E D M E S A T R A N S IS T O R S N P N S IL I C I U M , M E S A D IF F U S E S % Preferred device D isp o sitif recommandé' L F large signal pow er a m p lifica tio n


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    PDF BDY23/I80T2 BDY24 181T2 BDY25 182T2 180T2 181T2 182T2 BDY 11 T2140 BDY23 p 181 V BDV25

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    WK16412

    Abstract: wk16414 KT201 IRS 8342 WK16413 LQ470 LQ410 1PP75 KC639 KT728
    Text: TESLA ELEKTRONICKE SOUCASTKiT KO N CERN R O ZN O V nO/iynpOBOÆHMKOBbie npn6opbi A H o n o ro B b ie M H T e rp a n b H b ie MMKpOCXeMbl 1 U n c fjp o B b ie M H T e rp a / ib M b ie M U K p O C X e M bl 2 rn ö p k i/ iH b ie M H T e rp a / ib H b ie MMKpOCXeMbl


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: 4ÖE D • 0133107 00GG44T 5EMELABI 7Ö7 ■ SMLB n LT]> T.a.?.et BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rel Code HR HR HR HR HR HR HR HR CECC CECC CECC HR HR HR HR HR HR HR HR HR HR HR HR HR HR HR HR HR HR HR HR HR HR HR HR HR CECC CECC CECC


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    PDF 00GG44T BDX65 BDX65A BDX65B BDX65C BDX66 BDX66A BDX66B BDX66C BDX67

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    PDF

    1n52408

    Abstract: 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC
    Text: Contents Fairchild Semiconductors Ltd. Solid State Scientific Inc. Diodes Ltd. Thomson C. S. F. B Ashcroft Electronics Ltd. Sprague Electric UK Ltd. Precision Dynamic Corp. B&R Relays Schrack Relays Heller mann Electric B Foreword We are pleased to present the latest edition of the BARLEC Catalogue, which


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    PDF 301PT1115 302PT1115 303PT1115 311PT1110 312PTI110 319PTI110 327PTI110 351PT1115 353PT1115 1n52408 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    KF520

    Abstract: KT725 diac kr 206 KT707 KD502 kt201 KT206-200 KU607 KYS 30 40 diode KT784
    Text: TESLA ECIMEX, a. s. T E /1 \L /I Sem iconductor Discrete Devices Sem iconductor Discrete Devices CONTENTS . 3 TRANSISTORS. 5


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    PDF 15Blatnà KF520 KT725 diac kr 206 KT707 KD502 kt201 KT206-200 KU607 KYS 30 40 diode KT784