BE 187 TRANSISTOR Search Results

BE 187 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

BE 187 TRANSISTOR Price and Stock

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Microchip Technology Inc APT50M65LLLG MOSFET (Metal Oxide) Transistor - N-Channel - 500 V - 67A Continuous Drain (Id) @ 25°C - 65mOhm @ 33.5A, 10V - TO-264-3 Package - Through Hole.
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	APT50M65LLLG					1 $26.59 10 $25.46 100 $22.32 1000 $21.66 10000 $21.66	Buy Now
Microchip Technology Inc 2N2946AUB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	2N2946AUB					1 - 10 - 100 $23.42 1000 $23.42 10000 $23.42	Buy Now

BE 187 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
TRANSISTOR 187 Abstract: transistor b 1655 transistor on 4673 D 1062 transistor on BE 187 TRANSISTOR BE 187 TRANSISTOR ON 4673 187 transistor configuration+bel+187+transistor TRANSISTOR d 718 Text: TRANSISTOR MICA INSULATORS ke ye lco .com • RAPID HEAT DISSIPATION • HIGH DIELECTRIC STRENGTH • NON-TOXIC • LOW COST • FROM STOCK These precision stamped mica insulators provide good thermal conductivity .009 watts per square inch per degree celsius per inch in	Original		PDF
Untitled Abstract: No abstract text available Text: M60 Section 6 FREV2 11/23/11 12:09 PM Page 110 SOCKETS FOR T0-5 & TO-100 “MINI” HALOGEN LAMP SOCKETS Fully molded compact construction. Speeds transistor assembly. Incorporates ultra high quality, closed entry, sleeve type contacts. Accepts .016 .41 to .020 (.51) diameter	Original	O-100	PDF
transistor p86 Abstract: No abstract text available Text: M55 Sect 6 p86-103 m 10/13/06 7:27 PM Page 101 SOCKETS FOR T0-5 & TO-100 “MINI” HALOGEN LAMP SOCKETS Fully molded compact construction. Speeds transistor assembly. Incorporates ultra high quality, closed entry, sleeve type contacts. Accepts .016 .41 to .020 (.51) diameter leads or .010 (.25) x	Original	p86-103 O-100 O-100 transistor p86	PDF
CIL TRANSISTOR 188 Abstract: No abstract text available Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS CIL 187 TO-92 Plastic Package Intended For Low Voltage , High Current Output Pair Application Complementary CIL 188 ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise	Original	C-120 CIL187 Rev060901 CIL TRANSISTOR 188	PDF
CIL TRANSISTOR 188 Abstract: CIL TRANSISTOR 187 CIL TRANSISTOR 331 CIL187 CIL188 Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS CIL 187 TO-92 Plastic Package Intended For Low Voltage , High Current Output Pair Application Complementary CIL 188	Original	C-120 CIL187 Rev060901 CIL TRANSISTOR 188 CIL TRANSISTOR 187 CIL TRANSISTOR 331 CIL188	PDF
CIL TRANSISTOR 188 Abstract: CIL TRANSISTOR 187 CIL188 CIL TRANSISTOR 331 CIL187 CIL TRANSISTOR CIL 331 transistor a 92 a 331 Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS CIL 187 TO-92 Plastic Package Intended For Low Voltage , High Current Output Pair Application Complementary CIL 188 ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise	Original	C-120 CIL187 Rev060901 CIL TRANSISTOR 188 CIL TRANSISTOR 187 CIL188 CIL TRANSISTOR 331 CIL TRANSISTOR CIL 331 transistor a 92 a 331	PDF
NEC JAPAN 282 110 01 Abstract: NEC 2561 TYP 513 309 2SC4570 2SC4570-T1 2SC4570-T2 date sheet ic 7483 marking 929 922 nec 5261 Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4570 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the	Original	2SC4570 2SC4570 SC-70) 2SC4570-T1 NEC JAPAN 282 110 01 NEC 2561 TYP 513 309 2SC4570-T1 2SC4570-T2 date sheet ic 7483 marking 929 922 nec 5261	PDF
ic 7483 pin configuration Abstract: T 427 transistor TYP 513 309 2SC4570 ts 1683 nec 5261 Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA803T NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD µPA803T has built-in 2 transistors which were developed for UHF. PACKAGE DRAWINGS (Unit: mm) FEATURES 2.1±0.1 • High fT 1.25±0.1 6	Original	PA803T PA803T PA803T-T1 2SC4570) ic 7483 pin configuration T 427 transistor TYP 513 309 2SC4570 ts 1683 nec 5261	PDF
MM54C32 Abstract: No abstract text available Text: MICROCIRCUIT DATA SHEET Original Creation Date: 10/19/95 Last Update Date: 05/19/97 Last Major Revision Date: 04/02/97 MNMM54C32-X REV 1A0 QUAD 2-INPUT OR GATE General Description Employing complementary MOS CMOS transistors to achieve low power and high noise margin,	Original	MNMM54C32-X MM54C32	PDF
BUK7628-100A Abstract: BUK7528-100A Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which	Original	O220AB OT404 BUK7528-100A BUK7628-100A O220AB BUK7628-100A BUK7528-100A	PDF
8060 transistor Abstract: 104 csk 8060-1G6 M8058-1G18 8060-1G12 1G22 d 317 transistor transistor 373 transistor c 373 1g45 Text: Data downloaded from http://www.anglia.com - the website of Anglia - tel: 01945 474747 Catalogue 1654741 Specialty Sockets Revised 1-04 Transistor Sockets 8058 & 8060 Series 8060-1G11 8060-1G6 FEATURES: PERFORMANCE SPECIFICATIONS: The 8058/8060 family of teflon sockets, with beryllium copper contacts,	Original	8060-1G11 8060-1G6 MIL-S-83502/2 MIL-S-83502/5. 8060 transistor 104 csk 8060-1G6 M8058-1G18 8060-1G12 1G22 d 317 transistor transistor 373 transistor c 373 1g45	PDF
DG180-191 Abstract: No abstract text available Text: DG180-191 fffl HARRIS S E M I C O N D U C T O R High-Speed Driver With JFET Switch GENERAL DESCRIPTION FEATURES The DG180 thru DG191 series of analog gates consist of 2 or 4 N-channel junction-type field-effect transistors JFET designed to function as electronic switches. Level-shifting	OCR Scan	DG180-191 DG182, 150ns 10MHz DG180 DG191 DG186/187/188 DG189/190/191 DG189/190/191 DG180-191	PDF
Untitled Abstract: No abstract text available Text: TRANSISTOR M ICA INSULATORS • RAPID HEAT DISSIPATION • HIGH DIELECTRIC STRENGTH • NON-TOXIC • LOW COST • FROM STOCK These precision stamped mica insulators provide good thermal conductivity .009 watts per square inch per degree Celsius per inch in	OCR Scan		PDF
TRANSISTOR 187 Abstract: No abstract text available Text: TRANSISTOR M ICA INSULATORS • RAPID HEAT DISSIPATION • HIGH DIELECTRIC STRENGTH • NON-TOXIC • LOW COST • FROM STOCK These precision stamped mica insulators provide good thermal conductivity .009 watts per square inch per degree Celsius per inch in	OCR Scan	H28iH TRANSISTOR 187	PDF

G-184 Abstract: No abstract text available Text: S E M I C O N D U C T O R High-Speed Driver With JFET Switch GENERAL DESCRIPTION FEATURES The D G 180 thru D G 191 series o f analog gates co nsist of 2 or 4 N -channel junction-type fie ld -e ffe ct transistors JFET designed to function as ele ctro n ic sw itches. Level-shifting	OCR Scan	150ns, 10-PIN 14-PIN DG186/187/188 DG189/190/191 G-184	PDF
Untitled Abstract: No abstract text available Text: Low Saturation Voltage Switching Transistors LSV series E -p a c k IT O -2 2 0 S M D B ip o la r tra n s is to rs A b s o lu te M a x im u m R a tin g s E le c tric a l C h a ra c te ris tic s VcEO Pt Tstg Tj [°C ] PC] flFE (s u s ) V cE V be (s a t) (s a t)	OCR Scan	2SA1795 2SA1876	PDF
Transistor AC 187 Abstract: AC187K ac187 AC 187 npn transistor TO 1 ac188k Transistor AC 187 k valvo valvo transistor valvo germanium valvo transistoren Text: NICHT FÜR N E U E N T W I C K L U N G E N AC 187 K GERMANIUM - NPN - NF - TRANSISTOR für Endstufen, in Verbindung mit AC 188 K als komplementäres Paar Mechanische D a t e n : GehKuse: Metall JEDEC TO-1 bzw. 1 A 3 nach DIN 41 871 in Kdhlklotz Alle Elektroden sind	OCR Scan		PDF
a 4x transistor Abstract: IGBT modul Text: SENSITRON SEMICONDUCTOR 1998 • SHORT FORM CATALOG SCP-3511 HALF-BRIDGE IGBT MODUL • • • • HIGHCURENT HIGH RELIABILITY LOW THERMAL RESISTANCE HIGH SURGE CURRENT N-CHANNEL, HALF-BRIDGE INSULATED GATE BIPOLAR TRANSISTOR IGBT ENCLOSED IN HERMETIC PACKAGE.	OCR Scan	SCP-3511 a 4x transistor IGBT modul	PDF
RU 7511 Abstract: circuit diagram for je 182 g Text: DG180-191 HARRIS !Z * c ° "r.;.0.,! High-Speed Driver With JFET Switch GENERAL DESCRIPTION FEATURES The OG1SO thru DG191 series of analog gates consist of 2 or 4 N-channel junction-type field-effect transistors JFET designed to function as electronic switches. Level-shifting	OCR Scan	DG180-191 DG182, 150ns, 10MHz 10-PIN 14-PIN DG191 DPST-DG183/184/185 SPDT-DG186/187/188 DG186/187/188 RU 7511 circuit diagram for je 182 g	PDF
Untitled Abstract: No abstract text available Text: Power Transistor Sockets Heavy duty, fully insulated transistor sockets, TO-3 style, are molded of UL approved glass filled polyester and can be supplied with printed circuit or panel mount saddles. Spring brass or phosphor bronze contacts are available with brite tin, electro tin or gold plating. Molded bosses in casting eliminate the need for	OCR Scan	WA919 WA920 WA925 WA917 WA918 WA923 WA962 WA973 WA939 -WA940	PDF
55D8 Abstract: circuit diagram for je 182 g DG181 DG180 DG180-191 DG182 DG183 DG184 DG185 DG186 Text: Intersil Hlgh-Rellabllity Products DG180-191 U High Reltfnnfy High-Speed Driver qV ^ With JFET Switch GENERAL DESCRIPTION FEATURES The DG180 thru DG191 series of analoggates consist of 2 or 4 N-channel junction-type field-effect transistors JFET) designed to function as electronic switches. Level-shifting	OCR Scan	DG180-191 DG180 DG191 10MHz, SPDT-DG186/187/188 DG186/187/188 DPST-DG183/184/185 DG183/184/185 DG189/190/191 55D8 circuit diagram for je 182 g DG181 DG180-191 DG182 DG183 DG184 DG185 DG186	PDF
boitier to 126 Abstract: l14oc BF 914 2n 693 2N706 ESM 470 Text: Silicon PNP transistors, video high voltage Tamb = 25 0C Transistors PNP silicium , haute tension vidéo v CËO <V Case V C E sa t V ) fT (MHz/ T S i 76 min Page max <c / I b (m A ) - 10 - 0 ,5 50/5 100 # - 10 - 0 ,5 50/5 100 # 30 - 25 - 0 ,5 -5 /1 70 §	OCR Scan	ESM753 l14oc boitier to 126 l14oc BF 914 2n 693 2N706 ESM 470	PDF
CT 1975 sam Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking Text: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the	OCR Scan	2SC4570 2SC4570-T1 CT 1975 sam transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking	PDF
transistor 373 Abstract: 8060 transistor Text: Catalog 1307612 J & IV IF * Specialty Sockets Revised 7-01 Transistor Sockets 8058 & 8060 Series 8060-1G11 8060-1G6 FEATURES: PERFORMANCE SPECIFICATIONS: The 8058/8060 family of teflon sockets, with beryllium copper contacts, offers many features which allow them to be utilized in the most severe	OCR Scan	8060-1G11 8060-1G6 MIL-S-83502/2 M1L-S-83502/5. transistor 373 8060 transistor	PDF

BE 187 TRANSISTOR Search Results

BE 187 TRANSISTOR Result Highlights (5)

BE 187 TRANSISTOR Price and Stock

Microchip Technology Inc APT50M65LLLG

Microchip Technology Inc 2N2946AUB

BE 187 TRANSISTOR Datasheets Context Search

TRANSISTOR 187

Untitled

transistor p86

CIL TRANSISTOR 188

CIL TRANSISTOR 188

CIL TRANSISTOR 188

NEC JAPAN 282 110 01

ic 7483 pin configuration

MM54C32

BUK7628-100A

8060 transistor

DG180-191

Untitled

TRANSISTOR 187

G-184

Untitled

Transistor AC 187

a 4x transistor

RU 7511

Untitled

55D8

boitier to 126

CT 1975 sam

transistor 373