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    Abstract: No abstract text available
    Text: FORWARD INTCBNAHONAL ELECTRONICS LID . BC635 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS * Complement to Be636 ABSOLUTE MAXIMUM RATINGS at T«nh-2<»C Characteristic Collector-Emitter Voltage at Rb^ IK Q


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    PDF BC635 Be636 300uS, 100uA 150mA 500mA 500mA 30MHz