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    BEL TRANSISTORS Search Results

    BEL TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BEL TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bel 187 transistor

    Abstract: 20549 Arnold Magnetics economic industry and company analysis 908-260 Bernstein financial statement analysis bel 187 Hybrid Microcircuits GENERAL INSTRUMENT fuse 242
    Text: SECURITIES AND EXCHANGE COMMISSION Washington, D.C. 20549 FORM 10-K [X] Annual Report Pursuant to Section 13 or 15 d of the Securities Exchange Act of 1934 For the Fiscal Year Ended December 31, 1999 [ ] Transition Report Pursuant to Section 13 or 15(d) of


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: June 1996 NDP6030L / NDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		PDF NDP6030L NDB6030L

    Cherokee International Power

    Abstract: Cherokee International power supply cherokee Cherokee emerson UPS ONLINE EMERSON rectifier marvell API guide Aavid Thermalloy financial Cherokee power supply FINGERTIP
    Text: Total Power Solutions Guide The Power of Choice Avnet Electronics Marketing is the leading distributor of power management ICs, power components and power supplies, creating a one-stop shopping experience for customers in need of total power solutions. Avnet offers more than just traditional distribution services and socket-level design support by making it a point to understand total


    Original     		PDF AEM-TotalPower-02/09 Cherokee International Power Cherokee International power supply cherokee Cherokee emerson UPS ONLINE EMERSON rectifier marvell API guide Aavid Thermalloy financial Cherokee power supply FINGERTIP

    ISA1000

    Abstract: No abstract text available
    Text: m/vena POWEREX INC BTE D • TSTM bEl GD04Ö5S T * P R X IEF21KA1 Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 1SB97 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 - r-3 1 'S l Six-IGBT 1GBTMOD


    OCR Scan     		PDF IEF21KA1 1SB97 BP107, Amperes/1000 15Amperes/1 ISA1000

    GR 1815

    Abstract: 2SA950Y 1815gr 2SC1815Y 2SC2229Y 2SC2229-Y 2SA10150 1959Y 2SA562Y BF594
    Text: BHARAT ELEK/ SEPII COND DI M7E B • m 3 S 3 ciö O O OO Dl l T54 ■ BEL I jz*2 7 - ò ] VCE Si VCEO D e v ic e No VCBO V ebo V o lts V o lts V o lts min mm mm hFE le at bias min /m ax mA VCE 1 CM V o lts mA m ax P lo t mW max IC B O typ Sat V o lts ÍT


    OCR Scan     		PDF BF594 BF596 27min. BF597 37min. 2SC1815Y BC178B GR 1815 2SA950Y 1815gr 2SC2229Y 2SC2229-Y 2SA10150 1959Y 2SA562Y

    Untitled

    Abstract: No abstract text available
    Text: b 3E • b E M 1^ ? G D lS m O M IT S U B IS H I DGTL bEl ■ M IT 3 M IT S U B IS H I B IP O L A R D IG IT A L ICs M 54592P LOGIC 8 -U N IT HIGH VO LTA G E 500m A D A RLIN G TO N T R A N S IS T O R ARRAY W IT H C L A M P DIODE DESCRIPTION PIN CONFIGURATION (TOP VIEW)


    OCR Scan     		PDF 54592P M54592P, 500mA

    bel187

    Abstract: bel 187 transistor BEL 100N TRANSISTOR BEL188 transistor bel 187 bel 187 NPN TRANSISTOR bel 188 transistor BEL100N bel 187 transistor npn PN3904
    Text: BHARAT ELEK/SEHICOND DI 47E D • 1 4 3 5 3 ‘iä G O G G Q 1 G Tifi ■ B E LI I VCE Si Device No VCEO Volts min VCBO Volts mm V eb o Volts min hFE at b<as mm /max. Ic mA VCE Volts 1CM mA max P lo t mW ICBO nA max typ S a t V otts typ Cob ts p l- ns typ


    OCR Scan     		PDF 27min. 37min. 35friin. 50min 50min. 40min 40min. bel187 bel 187 transistor BEL 100N TRANSISTOR BEL188 transistor bel 187 bel 187 NPN TRANSISTOR bel 188 transistor BEL100N bel 187 transistor npn PN3904

    BEL 100N TRANSISTOR

    Abstract: bel 187 transistor PN3904 bel 188 transistor bel 187 transistor npn bel 187 BEL 100N bel 187 NPN TRANSISTOR bel 188 transistor pnp TRANSISTOR BC 187
    Text: VCE Si Device No VCEO VCBO Volts min V otts mm V eb o Volts min hFE at bias mm /max. Ic mA VcE V o lts 1 CM mA max P lo t mW max ICBO mA typ S at V otts typ pF typ ts ns typ N f <j B typ — — — TO 237 — — — TO 92 250 — — — TO 92 130 —


    OCR Scan     		PDF 27min. 37min. 35friin. 50min 50min. 40min 40min. BEL 100N TRANSISTOR bel 187 transistor PN3904 bel 188 transistor bel 187 transistor npn bel 187 BEL 100N bel 187 NPN TRANSISTOR bel 188 transistor pnp TRANSISTOR BC 187

    BEL 100N TRANSISTOR

    Abstract: bel 187 transistor BEL 100p transistor bel 187 NPN TRANSISTOR transistor BEL 187 transistor bf 198 bel 188 transistor bel 100n transistor npn bel 188 transistor pnp BEL187
    Text: VCE Si Device No VCEO VCBO Volts min V otts mm V eb o Volts mm hFE at bias mm ^max. le mA VcE V o lts 1 CM mA max P lo t mW max ICBO mA typ S at V otts typ pF typ ts ns typ N f <j B typ — — — TO 237 — — — TO 92 250 — — — TO 92 130 — —


    OCR Scan     		PDF 27min. 37min. 35friin. 50min 50min. 40min 40min. BEL 100N TRANSISTOR bel 187 transistor BEL 100p transistor bel 187 NPN TRANSISTOR transistor BEL 187 transistor bf 198 bel 188 transistor bel 100n transistor npn bel 188 transistor pnp BEL187

    BEL100N

    Abstract: bel 100n transistor 41 bf BEL100 BEL100N TRANSISTOR transistor BF 245 BEL 167 transistor BEL 100N BEL BF200 BF200 transistor
    Text: Si Device No VCEO Volts mm V cB O Volts mm V ebo Volts mm hFE at bias mm /max Ic mA V ce Volts 1 CM Plot ICBO mA mW uA max max typ V ce Sat Volts typ M Hz Cob Pt- typ typ ÍT ts N ns typ dB typ toff nsec — f Package NPN SWITCHING TRANSISTORS 20. 2N2218


    OCR Scan     		PDF 2N2218 285max 2N2219A 2N2221A 222STOR BEL100N 2N3500 2N3501 2N3501TV 20min. bel 100n transistor 41 bf BEL100 BEL100N TRANSISTOR transistor BF 245 BEL 167 transistor BEL 100N BEL BF200 BF200 transistor

    BY127

    Abstract: BHARAT ELECTRONICS CD3922 BEL BY127 CD3403 SOD-18 CM10-12A BHARAT BAL0001-100 BAL0004-100
    Text: BHARAT E L E K / SE I I I C O N D DI 4?E □□Gonn D ms • b e li T" 33-¿/ New devices under design Type Polarity C3-12 CM10-12A CM50-12A D1-28 D1-28Z D3-28 010-28 Frequency Vcc P out V <W) (W) 12.5 12.5 12.5 28 28 28 28 4 10 50 1 2 , 12.5 0.2 0.2 0.6


    OCR Scan     		PDF C3-12 CM10-12A CM50-12A D1-28 D1-28Z D3-28 345382-Extn BY127 BHARAT ELECTRONICS CD3922 BEL BY127 CD3403 SOD-18 BHARAT BAL0001-100 BAL0004-100

    Untitled

    Abstract: No abstract text available
    Text: Ordering n u m b e r:E N 4 4 9 5 SAXYO No.4495 FP202 PNP/NPN Epitaxial Planar Silicon Transistor Push-Pull Circuit Applications F eatu res • Composite type with 2 transistors PNP and NPN contained in one package facilitating high-density mounting. • The FP202 is formed with a chip being equivalent to the 2SA1338 and a chip being equivalent to the


    OCR Scan     		PDF FP202 FP202 2SA1338 2SC3392 250mm2X 250mm 250mm2 250mm2XQ

    BHARAT ELECTRONICS

    Abstract: BEL BY127 BHARAT CD3922 CM50-12A BAL0001-100 by125 BY126 CD3403 BAL0004-100
    Text: BHARAT ELEK/SEI1IC0ND »I M7E D ^ » u j^ w .,u m u ! ^ M A i ^ w w y . w M . iu w .• i E ■ « 1 1435310 DDOanil 14S ■ BELI T ' 3 3-¿/ 1y Iii i New devices under design Type Polarity C3-12 CM10-12A CM50-12A D1-28 D1-28Z D3-28 D10-28 Frequency Vcc P out


    OCR Scan     		PDF C3-12 CM10-12A CM50-12A D1-28 D1-28Z D3-28 D10-28 BA157 345382-Extn BHARAT ELECTRONICS BEL BY127 BHARAT CD3922 BAL0001-100 by125 BY126 CD3403 BAL0004-100

    TIP29

    Abstract: IEC134 TIP29B TIP30 TIP50
    Text: TIP29; 29A T1P29B; 29C J PHILIPS INTERNATIONAL SbE D I 713iDfl2fci □ □ 434HE= TIE WM PHIN SILICON EPITAXIAL BASE POWER TRANSISTORS T-33-o*{ NPN silicon transistors in a plastic envelope intended fo r use in ou tput stages o f audio and television am plifier circuits where high peak powers can occur. PNP complements are TIP30 series.


    OCR Scan     		PDF TIP29; TIP29B; 0D4344t> TIP30 TIP29 200Copyrighted T-33-09 711Dfl2L IEC134 TIP29B TIP50

    1T130A

    Abstract: No abstract text available
    Text: LINEAR SYSTEMS 1T130A IT130 IT131 1T132 MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT130 Series Pin for Pin Compatible C1 T A= 2 5 °C unless otherwise noted Collector Current 'c 10m A M a x im u m T e m p e ra tu re s


    OCR Scan     		PDF 1T130A IT130 IT131 1T132 IT132 370-H

    MC2833

    Abstract: M1175A AV RF Modulator wireless mc2833d MC2833 equivalent Microphone Wireless transmitter motorola amplifiers examples FM transmitter M1312-A mc2833p
    Text: M MOTOROLA Low Pow er FM Transm itter System LOW POWER FM TRANSMITTER SYSTEM MC2833 is a one-chip FM transmitter subsystem designed for cordless telephone and FM communication equipment. It includes a microphone amplifier, voltage controlled oscillator and two auxiliary transistors.


    OCR Scan     		PDF MC2833 SO-16) MC2833 Hz/x12 M1175A AV RF Modulator wireless mc2833d MC2833 equivalent Microphone Wireless transmitter motorola amplifiers examples FM transmitter M1312-A mc2833p

    KR3600

    Abstract: KR3600PRO KR3600-PRO kr3600 pro smc 3600 SMC 6 CA ore xs10
    Text: KR3600-XX KRZ600 KR3600ST KR3600-STD KR3600-PRO Keyboard Encoder Read Only Memory STANDARD MICROSYSTEMS CORPORATION FEATURES PIN CONFIGURATION • Data output directly compatible with TTL ■ N Key rollover or lockout operation ■ Quad mode ■ Lockout/rollover selection externally selected as option


    OCR Scan     		PDF KR3600-XX KRZ600 KR3600ST KR3600-STD KR3600-PRO XS10-2Î KR3600 KR3600PRO kr3600 pro smc 3600 SMC 6 CA ore xs10

    TIP544

    Abstract: No abstract text available
    Text: TYPES TIP544, TIP545, TIP546 P-N-P SINGLE-DIFFUSED SILICON POWER TRANSISTORS • 150 W at 25°C Case Temperature • 6-A Rated Continuous Collector Current • Min f j of 1 MHz at 20 V, 0.5 A TYPES T1P544, TIP545, T IP 5 4 6 BU LLETIN NO. DL-S 7111605, D EC EM B ER


    OCR Scan     		PDF TIP544, TIP545, TIP546 2N5758, 2N5759, 2N5760 T1P544, TIP544 TIP545

    Untitled

    Abstract: No abstract text available
    Text: TYPES TIXP547, TIXP548, TIXP549 N-P-N SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS OH • • 60 V , 80 V , and 100 V Min V BR CEO 100-A Rated Continuous Collector Current • 200 Watts at 100° C Case Temperature •


    OCR Scan     		PDF TIXP547, TIXP548, TIXP549

    2N5877

    Abstract: 2N5878
    Text: TYPES 2N5877, 2N5878 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS TYPES 2N5877, 2 N 5878 BULLETIN NO. DL-S 7111624, DECEMBER FOR PO W ER -A M PLIFIER A N D HIG H-SPEED-SW ITCHING A PPLICATIO N S D E SIG N ED FOR C O M P L E M E N T A R Y USE W ITH 2N 5875, 2N 58 76


    OCR Scan     		PDF 2N5877, 2N5878 2N5877 2N5877

    diode sy 162

    Abstract: SC236D 6P14P diode sy SF 127 C GF147S 6D22S 6P45S ECC88 6n23p
    Text: SERVICE-MITTEILUNGEN VEB IN DUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN iR iU ii 1r a d i o - t e i e v i s l o n I SEITE JUNI 1 9 8 1 b 1 - 7 Mitteilung aus dem VEB RFT Industrievertrieb R.u.F. Leipzig / S SERVICE-ANLEITUNG zum Translstor-Taschenempfänger "Signal 402"


    OCR Scan     		PDF

    BEL 100N TRANSISTOR

    Abstract: BEL100N bel 100n transistor npn BEL 100N 2n 2222a transistor BEL100 TRANSISTOR bd 657 BF200 transistor transistor BF 245 bd115
    Text: BHARAT EL EK /S E n i C O N D S Device No VC EO Volts min VcBO Volts mm DI 47E D V ebo VoHs min hFE at bias mm /max Ic mA 14353Tfl V ce V o lts 1 CM mA max P lo t mW max □□□□012 ICBO uA typ flTG • V ce Sat V o lts typ ÍT MHz typ BELI Cob pF typ


    OCR Scan     		PDF 143S3Tfl 2N2218 285max 2N2219A 2N3501TV 20min. 22min. 2N918 2N929 BEL 100N TRANSISTOR BEL100N bel 100n transistor npn BEL 100N 2n 2222a transistor BEL100 TRANSISTOR bd 657 BF200 transistor transistor BF 245 bd115

    DM160

    Abstract: DM160 tube PHILIPS ELECTRONIC TUBE HANDBOOK ELECTRONIQUES 7R06
    Text: SQ P H IL IP S |DMÎ6Ô VOLTAGE INDICATOR for use In transistorized computers INDICATEUR DE TENSION pour utilisation dans machines à calculer équipées de transistors SPANNUNGSANZEIGERÖHRE zur Verwendung ln Rechenmaschinen mit Transistorbestückung Heating


    OCR Scan     		PDF 7R06159 DM160 DM160 tube PHILIPS ELECTRONIC TUBE HANDBOOK ELECTRONIQUES 7R06

    Untitled

    Abstract: No abstract text available
    Text: 2N6486, 2N6487, 2N6488, 2N6489, 2N6490, 2N6491 File N um ber 678 15-A, 75-W, Silicon N-P-N and P-N-P Epitaxial-Base VERSAWATT Transistors Complementary Pairs for General-Purpose Switching and Amplifier Applications Features: • M a x im u m sa fe -a re a -o f-o p e ra tio n curves


    OCR Scan     		PDF 2N6486, 2N6487, 2N6488, 2N6489, 2N6490, 2N6491