ACS71x
Abstract: HALL ELEMENT AN26030 allegro 3 PIN hall effect sensor hall effect 4 pin out flux 729 magnetic field shield hall magnetic field sensor hall effect sensor for measure Surface Mount Hall Effect Sensor 6 pin
Text: Application Information Managing External Magnetic Field Interference When Using ACS71x Current Sensor ICs by Richard Dickinson and William Bentley INTRODUCTION ABSTRACT The highly compact Hall effect current sensor ICs without concentrators that are now available make
|
Original
|
ACS71x
AN26030,
HALL ELEMENT
AN26030
allegro 3 PIN hall effect sensor
hall effect 4 pin out
flux 729
magnetic field shield
hall magnetic field sensor
hall effect sensor for measure
Surface Mount Hall Effect Sensor 6 pin
|
PDF
|
Microphone mtbf
Abstract: No abstract text available
Text: TM O PT I M I S E D UNIFIED The abox DSPTM core processor is the heart of each Ashton Bentley TM room system. The abox DSP core processor houses the individual system components normally found in a rack of equipment in an integrated room system including a multichannel echo cancelling DSP.
|
Original
|
181mm
354mm
120mm
ABC-506-032414-1754
Microphone mtbf
|
PDF
|
rc 3150
Abstract: A12A ACS704 ACS704ELC ACS704ELC-005 ACS704ELC-015 ALLEGRO MICROSYSTEMS current sensor
Text: PRODUCT DESCRIPTION Managing Noise Levels in the ACS704 Current Sensor by Richard Dickinson and William Bentley INTRODUCTION The minimum current that can be resolved by the ACS704 current sensor is limited by the noise present in the output of the sensor.
|
Original
|
ACS704
AN295035
rc 3150
A12A
ACS704ELC
ACS704ELC-005
ACS704ELC-015
ALLEGRO MICROSYSTEMS
current sensor
|
PDF
|
ACS71x
Abstract: "Hall Effect Sensor" Reliability allegro ACS704 hall effect sensor for measure above 10 ACS70x allegro HALL EFFECT SENSOR hall sensor 650 current measurement using hall effect sensor 137 hall SENSOR hall effect sensor for measure
Text: Application Information Managing External Magnetic Field Interference When Using ACS70x and ACS71x Current Sensors by Richard Dickinson and William Bentley INTRODUCTION ABSTRACT The highly compact Hall effect current sensors without concentrators that are now available. It is possible to
|
Original
|
ACS70x
ACS71x
ACS71x.
AN26030,
"Hall Effect Sensor" Reliability allegro
ACS704
hall effect sensor for measure above 10
allegro HALL EFFECT SENSOR
hall sensor 650
current measurement using hall effect sensor
137 hall SENSOR
hall effect sensor for measure
|
PDF
|
E9AF-14A624-AA
Abstract: 71001fb 74003pc bosch Mass Air Flow Sensor bosch maf sensor intel p8061bh Bosch MAF 74001mc p8061bh ford eec V
Text: EECtechnical.doc . 11.20.97 Technical Notes on The EEC-IV MCU Compiled by Tom Cloud <cloud@peaches.ph.utexas.edu> (all fonts are Courier New) (The information supplied here was gotten through researching e-mail correspondence, technical publications and from information given to the author. If it helps you, great!
|
Original
|
|
PDF
|
3V TVS
Abstract: SC-89 STE0515 STE0515D52RG
Text: Five-Line ESD Protection Array STE0515 Working voltage 5V DESCRIPTION The STE0515 are designed by TVS device that is to protect sensitive electronics from damage or latch-up due to ESD. They are designed for use in applications where board space ia at a premium.
|
Original
|
STE0515
STE0515
OT-563
OT-563
SC-89)
3V TVS
SC-89
STE0515D52RG
|
PDF
|
PNP transistor 8550
Abstract: transistor 8550 8550 pnp transistor PNP 8550 8550 pnp he 8550 pnp transistor c 8550 transistor 8550 transistor
Text: PNP TRANSISTOR 8550 -1.5A Power Dissipation: 1.0W Collector Current: -1.5A Collector-Base Voltage: -45V TO-92 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAMETERS SYMBOL MIN TYP MAX UNIT CONDITION Collector-Emitter Breakdown Voltage BVceo
|
Original
|
-100uA
-100A
-1500mA,
-50mA
PNP transistor 8550
transistor 8550
8550 pnp transistor
PNP 8550
8550 pnp
he 8550 pnp transistor
c 8550 transistor
8550 transistor
|
PDF
|
STN2300
Abstract: SOP-23 transistor sot code
Text: N Channel Enchancement Mode MOSFET STN2300 6.0A DESCRIPTION The STN2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance.These
|
Original
|
STN2300
STN2300
OP-23-3L
30m-ohm
40m-ohm
50m-ohm
OT-23-3L
SOP-23
transistor sot code
|
PDF
|
NPN transistor 8050
Abstract: transistor 8050 transistor b 8050 npn 8050 8050 transistor D 8050
Text: NPN TRANSISTOR 8050 1.5A Power Dissipation Pcm : 1.0W Collector Current Icm : 1.5A Collector-Base Voltage Vcbo: 45V MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAMETERS Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage
|
Original
|
100uA
100urrent
1500mA,
500mA
NPN transistor 8050
transistor 8050
transistor b 8050
npn 8050
8050 transistor
D 8050
|
PDF
|
marking L44
Abstract: BAT54S SOT-23 BAT54S application note l44 sot-23 marking l44 sot-23 transistor L44 BAT54S
Text: Schottky Barrier Diode BAT54S 400 mA SOT-23 1. Anode 1 2. Cathode 2 3. Cathode 1/Anode 2 GENERAL PURPOSE DETEDTION HIGH SPEED SWITCHING LOW REVERSE CURRENT AND FORWARD VLOTAGE MARKING: L44 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（Ta=25℃） BETWEEN PIN 1 AND PIN 3 OR PIN2 AND PIN3
|
Original
|
BAT54S
OT-23
100mA
marking L44
BAT54S SOT-23
BAT54S application note
l44 sot-23
marking l44 sot-23
transistor L44
BAT54S
|
PDF
|
Untitled
Abstract: No abstract text available
Text: d 560 • Leading OpenGL and Direct3D® performance • Dual independent high-resolution displays • Full 3Dlabs® Acuity Driver Suite • Fully compatible with the Wildcat VP family • Professional-grade reliability and quality Visual Processing Architecture
|
Original
|
VP560
VP500
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Meggitt Electronic Com ponents Australia Finland Global Distribution SouthAfrica X-ON Electronincs Yleiselektroniikka OY Suntronika 1161 Albany Highway Bentley Perth 6102 Tel: + 61 0 8 94 58 52 52 Fax: + 61 (0) 8 94 58 55 45 Luomannotko 6 10 Station Street
|
OCR Scan
|
|
PDF
|
H10D4890
Abstract: D4850C d480 D4812C w046 H10D4850 H12CA4850 H12CD4850 H12D4850 H12D4890
Text: CRYDOM CO b u l l e t , n 8 2 31E T> m 5542537 □ □ □ □ m D 7 • CRY F2^-B/ C3YDOM C O M P A N Y SERIES 1-HV SCR Output Solid-State Relays 8 Thru 90 Amp High Voltage, AC Output GENERAL DESCRIPTION Opto-lsolated 4000 VRMS ■ Zero Voltage Switching AC ■
|
OCR Scan
|
D6935
H10D4890
D4850C
d480
D4812C
w046
H10D4850
H12CA4850
H12CD4850
H12D4850
H12D4890
|
PDF
|
e78996 india
Abstract: E78996 rectifier module IRFK3DC50 IRFK3FC50
Text: Bulletin E27101 International ficÊlRertifeT IRFK3DC50,IRFK3FC50 Isolated Base Power HEX-pak Assembly - Half Bridge Configuration • • • • High Current Capability. UL recognised E78996. Electrically Isolated Base Plate. Easy Assembly into Equipment.
|
OCR Scan
|
E27101
IRFK3PC50
IRFK3FC50
E78996.
T0-240
se2/337
S-162
CH-6032
IL60067.
NJ07650.
e78996 india
E78996 rectifier module
IRFK3DC50
IRFK3FC50
|
PDF
|
|
|
TD1205
Abstract: No abstract text available
Text: 7MC D CRYDOM CO 2SME537 ODDOSDT T * C R Y BULLETIN 603A INTERNATIONAL RECTIFIER 4 CRYDOM fn -v f S E R IE S T n -A *r-n T r ia c o u t p u t Solid-State Relay n 5 Thru 25 Amp AC Output 7MC D CO 55M2S37 000 0510 S « C R Y Series T/Triac Output Solid-State, Photo-Isolated
|
OCR Scan
|
2SME537
55M2S37
D-6000
TD1205
|
PDF
|
Str 5754
Abstract: Str W 5754 e78996 india IRFK2DC50 IRFK2FC50
Text: Bulletin E2795 International Ik ^IRectifier IRFK2DC50,IRFK2FC50 Isolated Base Power HEX-pak Assembly - Half Bridge Configuration • • • • High Current Capability. UL recognised E78996. Electrically Isolated Base Plate. Easy Assembly into Equipment.
|
OCR Scan
|
E2795
IRFK2DC50
IRFK2FC50
E78996.
O-240
sen65
S-162
CH-8032
IL60067.
NJ07650.
Str 5754
Str W 5754
e78996 india
IRFK2FC50
|
PDF
|
ior e78996
Abstract: IRFK3D450 e78996 india IRFK3F450
Text: Bulletin E27100 International Iiqr IRectifier IRFK3D450,IRFK3F450 Isolated Base Power HEX-pak Assem bly - Half Bridge Configuration • • • ■ High Current Capability. UL recognised E78996. Electrically Isolated Base Plate. Easy Assembly into Equipment.
|
OCR Scan
|
E27100
IRFK3P450
IRFK3F450
E78996.
T0-240
ior e78996
IRFK3D450
e78996 india
IRFK3F450
|
PDF
|
IOR 336
Abstract: marking code AAAE IRFI740GLC IRFI840G marking AAAE
Text: PD-9.1209 International S Rectifier IRFI740GLC HEXFET Power MOSFET • • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm
|
OCR Scan
|
IRFI740GLC
D-6380
6172-3706a
IOR 336
marking code AAAE
IRFI740GLC
IRFI840G
marking AAAE
|
PDF
|
IRF1010
Abstract: IRF734 SS452
Text: PD-9.999 International H ü Rectifier IRF734 HEXFET Pow er M O S F E T • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Description Third G eneration H E X F E T s from International R ectifier provide the de sig ner
|
OCR Scan
|
IRF734
O-220
Dra720403
D-6380
IRF1010
IRF734
SS452
|
PDF
|
k d718
Abstract: d718* transistor D718 transistor d718 marking code SJ transistors k d718 017 Ultra High Voltage Hexfets D718 transistor IRFI840G IRFI840GLC
Text: PD-9.1208 International [mîr] Rectifier IRFI840GLC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Repetitive Avalanche Rated
|
OCR Scan
|
IRFI840GLC
D-6380
k d718
d718* transistor
D718
transistor d718
marking code SJ transistors
k d718 017
Ultra High Voltage Hexfets
D718 transistor
IRFI840G
IRFI840GLC
|
PDF
|
IBF20
Abstract: IC ST 201A 600PE80
Text: INTERNATIONAL RECTIFIER "4T ß F § 4 Ö S S 4 S a ODD47S4 1 Data Sheet No. PD-3.073 IN T E R N A T I O N A L I“ R R E C T I F I E R 'T'j.s''ÆO 940A RMS Hockey Puk Thyristors 600 PE SERIES Description The 60 0 P E series of converter type hockey puk thyristors use
|
OCR Scan
|
ODD47S4
IBF20
IC ST 201A
600PE80
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD-9.996 International k Rectifier IRFPC48 HEXFET® Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements V dss - 600V ^DS on = 0 . 8 2 Q
|
OCR Scan
|
IRFPC48
O-247
O-220
O-218
D-6380
ASIA190
|
PDF
|
IR6001
Abstract: No abstract text available
Text: Preliminary Data Sheet 6.038 INTERNATIONAL RECTIFIER IO R IR6001 INTELLIGENT HIGH-SIDE □MOS POWER SWITCH 60V Intelligent Power Switch Rating Summary General Description The IR6001 is a monolithic, fully self protected high side D M O S power switch. Designed primarily for solenoid
|
OCR Scan
|
IR6001
IR6001
D-6380
|
PDF
|
IR6000
Abstract: IR-6000
Text: Preliminary Data Sheet 6.025 INTERNATIONAL RECTIFIER IO R IR6000 INTELLIGENT HIGH-SIDE □MOS POWER SWITCH Avalanche Rated 60 Volts/1 OOmft Product Summary General Description The IR6000 is a monolithic, fully self protected high side DMOS switch. Designed primarily for solenoid and
|
OCR Scan
|
IR6000
IR6000
goes31,
D-6380
005136b
IR-6000
|
PDF
|