ECCOBOND 104
Abstract: MIL-A-46146 Hysol C9-4215 Hysol 4215 Emerson Cuming Catalyst 11 Stycast 2651 7224 markem Hysol Stycast 2651 Markem 7224 Ink rtv 174
Text: Introduction Guidelines for Space-Grade Applications MIL-DTL-38999 Connectors for Space Flight Nonmetallic materials such as rubber, plastic, adhesives and potting compounds can give off gasses when subjected to a vacuum or high heat. The space industry has adopted a standardized
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MIL-DTL-38999
2651/Catalyst
2850FT/Catalyst
05-APR-2007
ECCOBOND 104
MIL-A-46146
Hysol C9-4215
Hysol 4215
Emerson Cuming Catalyst 11
Stycast 2651
7224 markem
Hysol Stycast 2651
Markem 7224 Ink
rtv 174
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4485-12-5
Abstract: CONDUCTIVE INK
Text: MATERIAL DECLARATION SHEET Material Number 86 C-P-L Dual Cup Product Line Panel Control Compliance Date September 30, 2005 RoHS Compliant Yes No. 1 2 Construction Element (subpart) Substrate Conductive Ink MSL Homogeneous Material Ceramic Ink N/A Material
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Untitled
Abstract: No abstract text available
Text: MATERIAL DECLARATION SHEET Material Number 85L CP Dual Cup Product Line Panel Control Compliance Date September 30, 2005 RoHS Compliant Yes MSL N/A Subpart mass of total wt. (%) 72 Material Mass % of total unit wt. 3.920 25 1.361 5.455 7440-50-08 3 0.163
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titanium dioxide
Abstract: calcium grease
Text: MATERIAL DECLARATION SHEET Material Number 85-L Cermet Dual Cup Product Line Panel Control Compliance Date September 30, 2005 RoHS Compliant Yes MSL N/A Subpart mass of total wt. (%) 72 Material Mass % of total unit wt. 3.920 25 1.361 5.455 7440-50-08 3
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fiber switch
Abstract: No abstract text available
Text: MATERIAL DECLARATION SHEET Material Number 86-L Cermet Dual Cup Product Line Panel Control Compliance Date September 30, 2005 RoHS Compliant Yes MSL N/A No. Construction Element (subpart) Homogeneous Material Material weight [g] 1 Rotor Driver Zinc 0.968
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material declaration amd
Abstract: HALON 2402 CFC-12 ASBESTOS lead selenide 13765 63936 7446 data sheet gruner magnesium hydroxide
Text: u Chapter 4 Package Materials CHAPTER 4 PACKAGE MATERIALS Introduction Controlled Materials Restricted Materials Materials of Interest Material Declaration Data Sheets Packages and Packing Publication Revision A 3/1/03 4-1 u Chapter 4 Package Materials INTRODUCTION
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ISO-11469
Abstract: manufacturing process calcium chloride Asbestos MSDS 79005 voltage regulator din6120 DIN-6120 Boric 94850 sulphuric acid 51 32844
Text: SII GREEN PROCUREMENT STANDARDS Version 6 September 2010 Seiko Instruments Inc. S-G-3 Table of Contents Page PREFACE ・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・ 1
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tva0300n07
Abstract: mmic amplifier marking code N10 MTVA0300N05 PST-02-A-1 TVA0300N07W3 electronic passive components catalog SC-1016 MTVA0300 SMT2010TALN 42TVA
Text: EMC TECHNOLOGY Custom Engineered Solutions 8851 SW Old Kansas Ave. 772 286-9300 ISO 9001 & 14001 Certified M I C R OWAV E C O M P O N E N T S www.emct.com Resistive Products, Smart Loads , High Reliability Stuart, FL 34997 (800) 544-5594 Thermopads®, Equalizers,
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Untitled
Abstract: No abstract text available
Text: Material Composition Survey and Response Manual December 15, 2006 Third Edition Data Format Ver. 3.21 compliant Japan Green Procurement Survey Standardization Initiative Revision History: January 6, 2006: First Edition – Newly created upon the introduction of the JIG
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Pb-R-10,
Pb-R-15-22)
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cyclohexene
Abstract: 82306 1010218 urea formaldehyde resin adhesive tetrabutyl tin zinc naphthenate hydroquinone manufacturing process calcium chloride p-chlorophenol pentaerythritol
Text: Matsushita Electric Group Chemical Substance Management Rank Guidelines Version 2 July 6, 2000 Matsushita Electric Industrial Co., Ltd. Contents 1. Purpose ・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・1
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100v 23A P-Channel MOSFET
Abstract: No abstract text available
Text: Semiconductor FRF9150D, FRF9150R, FRF9150H 23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 23A, -100V, rDS ON = 0.140Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot
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FRF9150D,
FRF9150R,
FRF9150H
-100V,
O-254AA
1000K
3000K
O-254AA
MIL-S-19500
100v 23A P-Channel MOSFET
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ta17741
Abstract: 2E12 FRS9140D FRS9140H FRS9140R
Text: FRS9140D, FRS9140R, FRS9140H 11A, -100V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 11A, -100V, RDS on = 0.315Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRS9140D,
FRS9140R,
FRS9140H
-100V,
O-257AA
100KRAD
300KRAD
1000KRAD
3000KRAD
ta17741
2E12
FRS9140D
FRS9140H
FRS9140R
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MIL-S-19500
Abstract: mosfet 60a 200v 100v 23A P-Channel MOSFET FRF250R4 N-channel enhancement 200V 60A 1E14 2E12 JANSR2N7294
Text: JANSR2N7294 Formerly FRF250R4 23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 23A, 200V, rDS ON = 0.115Ω The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from
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JANSR2N7294
FRF250R4
1000K
MIL-S-19500
mosfet 60a 200v
100v 23A P-Channel MOSFET
FRF250R4
N-channel enhancement 200V 60A
1E14
2E12
JANSR2N7294
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2E12
Abstract: FRS9140D FRS9140H FRS9140R Rad Hard in Fairchild for MOSFET
Text: FRS9140D, FRS9140R, FRS9140H 11A, -100V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 11A, -100V, RDS on = 0.315Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRS9140D,
FRS9140R,
FRS9140H
-100V,
O-257AA
100KRAD
300KRAD
1000KRAD
3000KRAD
2E12
FRS9140D
FRS9140H
FRS9140R
Rad Hard in Fairchild for MOSFET
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Untitled
Abstract: No abstract text available
Text: JANSR2N7292 Semiconductor Formerly FRF150R4 25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 25A, 100V, rDS ON = 0.070Ω The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both
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JANSR2N7292
1000K
O-254AA
MIL-S-19500
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Beryllium Compounds
Abstract: JIG-101 asbestos Enpirion EN5365QI EN5366QI SURVEY selenium material composition Information Enpirion en5366qi
Text: Material Declaration Data Sheet ENPIRION Date Company Name Company Address May 15 2008 Enpirion, Inc 685 Route 202/206, Suite 305, Bridgewater, NJ 08807 908-575-7550 www.enpirion.com EN5365QI, EN5366QI Voltage Mode Synchronous Buck PWM DC-DC Converter Module
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EN5365QI,
EN5366QI
10x12x1
58-pin
JIG-101
RoHS-EN5365-5366
58QFN10x12x1
V01-08
Beryllium Compounds
JIG-101
asbestos
Enpirion
EN5365QI
EN5366QI
SURVEY
selenium
material composition
Information Enpirion en5366qi
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JIG-101
Abstract: selenium EN5395 Beryllium Compounds Information Enpirion en5395qi Information Enpirion en5396qi
Text: Material Declaration Data Sheet ENPIRION Date Company Name Company Address Aug 12 2008 Enpirion, Inc 685 Route 202/206, Suite 305, Bridgewater, NJ 08807 908-575-7550 www.enpirion.com EN5395QI, EN5396QI Voltage Mode Synchronous Buck PWM DC-DC Converter Module
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EN5395QI,
EN5396QI
10x12x1
58-pin
JIG-101
RoHS-EN5395-5396
58QFN10x12x1
V01-08
JIG-101
selenium
EN5395
Beryllium Compounds
Information Enpirion en5395qi
Information Enpirion en5396qi
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Asbestos MSDS
Abstract: No abstract text available
Text: SII GREEN PROCUREMENT STANDARDS Version 7 September 2012 Seiko Instruments Inc. S-G-3 Table of Contents Page PREFACE ・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・ 1
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FRS240R
Abstract: 1E14 2E12 FRS240D FRS240H
Text: FRS240D, FRS240R, FRS240H 12A, 200V, 0.255 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Package Features • 12A, 200V, RDS on = 0.255Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRS240D,
FRS240R,
FRS240H
O-257AA
100KRAD
300KRAD
1000KRAD
3000KRAD
MIL-S-19500
FRS240R
1E14
2E12
FRS240D
FRS240H
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Untitled
Abstract: No abstract text available
Text: FRF250D, FRF250R, FRF250H 23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 23A, 200V, RDS on = 0.115S1 TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
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FRF250D,
FRF250R,
FRF250H
115S1
O-254AA
100KRAD
300KRAD
1000KRAD
3000KRAD
MIL-S-19500
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Untitled
Abstract: No abstract text available
Text: JANSR2N7292 HARRIS S E M I C O N D U C T O R Formerly Available As FRF150R4 Radiation Hardened, N-Channel Power MOSFETs Features Description . 25A, 100V, rDS 0 N = 0.070£2 The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both
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JANSR2N7292
FRF150R4
1000K
MIL-S-19500
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Untitled
Abstract: No abstract text available
Text: FRF450D, FRF450R, FRF450H 9A, 500V, 0.615 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 9A, 500V, RDS on = 0.615Q. TO-254AA • Second G eneration Rad Hard M O SFET Results From New Design Concepts • G am m a - Meets Pre-Rad Specifications to 100KRAD(Si)
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FRF450D,
FRF450R,
FRF450H
O-254AA
100KRAD
300KRAD
1000KRAD
3000KRAD
MIL-S-19500
-254AA
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Untitled
Abstract: No abstract text available
Text: FRS9140D, FRS9140R, FRS9140H 11 A, -100V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 11 A, -100V, RDS on = 0.315Q. TO-257AA • Second G eneration Rad Hard M O SFET Results From New Design Concepts • G am m a - Meets Pre-Rad Specifications to 100KRAD(Si)
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FRS9140D,
FRS9140R,
FRS9140H
-100V,
O-257AA
100KRAD
300KRAD
1000KRAD
3000KRAD
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Untitled
Abstract: No abstract text available
Text: if^ S S FRS240D, FRS240R, FRS240H 12A, 200V, 0.255 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Package Features • 12A, 200V, RDS on = 0.255£i TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
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FRS240D,
FRS240R,
FRS240H
O-257AA
100KRAD
300KRAD
1000KRAD
3000KRAD
IL-S-19500
MIL-S-19500
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