Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BERYLLIUM COMPOUNDS Search Results

    BERYLLIUM COMPOUNDS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SMOD707KITV1 Renesas Electronics Corporation Volatile Organic Compound (VOC) Sensor Evaluation Kit Visit Renesas Electronics Corporation
    D12320VTE20V Renesas Electronics Corporation Microcontrollers for General Purpose System Control Applications (Non Promotion), TFQFP, / Visit Renesas Electronics Corporation
    D12324SVF25V Renesas Electronics Corporation Microcontrollers for General Purpose System Control Applications (Non Promotion), FQFP, /Tray Visit Renesas Electronics Corporation
    D12373RVFQ33V Renesas Electronics Corporation Microcontrollers for General Purpose System Control Applications (Non Promotion), LQFP, /Tray Visit Renesas Electronics Corporation
    D12670VFC33V Renesas Electronics Corporation High-end Microcontrollers for Automotive Control and Factory Automation Applications (Non Promotion), FQFP, /Tray Visit Renesas Electronics Corporation

    BERYLLIUM COMPOUNDS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ECCOBOND 104

    Abstract: MIL-A-46146 Hysol C9-4215 Hysol 4215 Emerson Cuming Catalyst 11 Stycast 2651 7224 markem Hysol Stycast 2651 Markem 7224 Ink rtv 174
    Text: Introduction Guidelines for Space-Grade Applications MIL-DTL-38999 Connectors for Space Flight Nonmetallic materials such as rubber, plastic, adhesives and potting compounds can give off gasses when subjected to a vacuum or high heat. The space industry has adopted a standardized


    Original
    PDF MIL-DTL-38999 2651/Catalyst 2850FT/Catalyst 05-APR-2007 ECCOBOND 104 MIL-A-46146 Hysol C9-4215 Hysol 4215 Emerson Cuming Catalyst 11 Stycast 2651 7224 markem Hysol Stycast 2651 Markem 7224 Ink rtv 174

    4485-12-5

    Abstract: CONDUCTIVE INK
    Text: MATERIAL DECLARATION SHEET Material Number 86 C-P-L Dual Cup Product Line Panel Control Compliance Date September 30, 2005 RoHS Compliant Yes No. 1 2 Construction Element (subpart) Substrate Conductive Ink MSL Homogeneous Material Ceramic Ink N/A Material


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: MATERIAL DECLARATION SHEET Material Number 85L CP Dual Cup Product Line Panel Control Compliance Date September 30, 2005 RoHS Compliant Yes MSL N/A Subpart mass of total wt. (%) 72 Material Mass % of total unit wt. 3.920 25 1.361 5.455 7440-50-08 3 0.163


    Original
    PDF

    titanium dioxide

    Abstract: calcium grease
    Text: MATERIAL DECLARATION SHEET Material Number 85-L Cermet Dual Cup Product Line Panel Control Compliance Date September 30, 2005 RoHS Compliant Yes MSL N/A Subpart mass of total wt. (%) 72 Material Mass % of total unit wt. 3.920 25 1.361 5.455 7440-50-08 3


    Original
    PDF

    fiber switch

    Abstract: No abstract text available
    Text: MATERIAL DECLARATION SHEET Material Number 86-L Cermet Dual Cup Product Line Panel Control Compliance Date September 30, 2005 RoHS Compliant Yes MSL N/A No. Construction Element (subpart) Homogeneous Material Material weight [g] 1 Rotor Driver Zinc 0.968


    Original
    PDF

    material declaration amd

    Abstract: HALON 2402 CFC-12 ASBESTOS lead selenide 13765 63936 7446 data sheet gruner magnesium hydroxide
    Text: u Chapter 4 Package Materials CHAPTER 4 PACKAGE MATERIALS Introduction Controlled Materials Restricted Materials Materials of Interest Material Declaration Data Sheets Packages and Packing Publication Revision A 3/1/03 4-1 u Chapter 4 Package Materials INTRODUCTION


    Original
    PDF

    ISO-11469

    Abstract: manufacturing process calcium chloride Asbestos MSDS 79005 voltage regulator din6120 DIN-6120 Boric 94850 sulphuric acid 51 32844
    Text: SII GREEN PROCUREMENT STANDARDS Version 6 September 2010 Seiko Instruments Inc. S-G-3 Table of Contents Page PREFACE ・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・ 1


    Original
    PDF

    tva0300n07

    Abstract: mmic amplifier marking code N10 MTVA0300N05 PST-02-A-1 TVA0300N07W3 electronic passive components catalog SC-1016 MTVA0300 SMT2010TALN 42TVA
    Text: EMC TECHNOLOGY Custom Engineered Solutions 8851 SW Old Kansas Ave. 772 286-9300 ISO 9001 & 14001 Certified M I C R OWAV E C O M P O N E N T S www.emct.com Resistive Products, Smart Loads , High Reliability Stuart, FL 34997 (800) 544-5594 Thermopads®, Equalizers,


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: Material Composition Survey and Response Manual December 15, 2006 Third Edition Data Format Ver. 3.21 compliant Japan Green Procurement Survey Standardization Initiative Revision History: January 6, 2006: First Edition – Newly created upon the introduction of the JIG


    Original
    PDF Pb-R-10, Pb-R-15-22)

    cyclohexene

    Abstract: 82306 1010218 urea formaldehyde resin adhesive tetrabutyl tin zinc naphthenate hydroquinone manufacturing process calcium chloride p-chlorophenol pentaerythritol
    Text: Matsushita Electric Group Chemical Substance Management Rank Guidelines Version 2 July 6, 2000 Matsushita Electric Industrial Co., Ltd. Contents 1. Purpose ・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・1


    Original
    PDF

    100v 23A P-Channel MOSFET

    Abstract: No abstract text available
    Text: Semiconductor FRF9150D, FRF9150R, FRF9150H 23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 23A, -100V, rDS ON = 0.140Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot


    Original
    PDF FRF9150D, FRF9150R, FRF9150H -100V, O-254AA 1000K 3000K O-254AA MIL-S-19500 100v 23A P-Channel MOSFET

    ta17741

    Abstract: 2E12 FRS9140D FRS9140H FRS9140R
    Text: FRS9140D, FRS9140R, FRS9140H 11A, -100V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 11A, -100V, RDS on = 0.315Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original
    PDF FRS9140D, FRS9140R, FRS9140H -100V, O-257AA 100KRAD 300KRAD 1000KRAD 3000KRAD ta17741 2E12 FRS9140D FRS9140H FRS9140R

    MIL-S-19500

    Abstract: mosfet 60a 200v 100v 23A P-Channel MOSFET FRF250R4 N-channel enhancement 200V 60A 1E14 2E12 JANSR2N7294
    Text: JANSR2N7294 Formerly FRF250R4 23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 23A, 200V, rDS ON = 0.115Ω The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from


    Original
    PDF JANSR2N7294 FRF250R4 1000K MIL-S-19500 mosfet 60a 200v 100v 23A P-Channel MOSFET FRF250R4 N-channel enhancement 200V 60A 1E14 2E12 JANSR2N7294

    2E12

    Abstract: FRS9140D FRS9140H FRS9140R Rad Hard in Fairchild for MOSFET
    Text: FRS9140D, FRS9140R, FRS9140H 11A, -100V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 11A, -100V, RDS on = 0.315Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original
    PDF FRS9140D, FRS9140R, FRS9140H -100V, O-257AA 100KRAD 300KRAD 1000KRAD 3000KRAD 2E12 FRS9140D FRS9140H FRS9140R Rad Hard in Fairchild for MOSFET

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7292 Semiconductor Formerly FRF150R4 25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 25A, 100V, rDS ON = 0.070Ω The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both


    Original
    PDF JANSR2N7292 1000K O-254AA MIL-S-19500

    Beryllium Compounds

    Abstract: JIG-101 asbestos Enpirion EN5365QI EN5366QI SURVEY selenium material composition Information Enpirion en5366qi
    Text: Material Declaration Data Sheet ENPIRION Date Company Name Company Address May 15 2008 Enpirion, Inc 685 Route 202/206, Suite 305, Bridgewater, NJ 08807 908-575-7550 www.enpirion.com EN5365QI, EN5366QI Voltage Mode Synchronous Buck PWM DC-DC Converter Module


    Original
    PDF EN5365QI, EN5366QI 10x12x1 58-pin JIG-101 RoHS-EN5365-5366 58QFN10x12x1 V01-08 Beryllium Compounds JIG-101 asbestos Enpirion EN5365QI EN5366QI SURVEY selenium material composition Information Enpirion en5366qi

    JIG-101

    Abstract: selenium EN5395 Beryllium Compounds Information Enpirion en5395qi Information Enpirion en5396qi
    Text: Material Declaration Data Sheet ENPIRION Date Company Name Company Address Aug 12 2008 Enpirion, Inc 685 Route 202/206, Suite 305, Bridgewater, NJ 08807 908-575-7550 www.enpirion.com EN5395QI, EN5396QI Voltage Mode Synchronous Buck PWM DC-DC Converter Module


    Original
    PDF EN5395QI, EN5396QI 10x12x1 58-pin JIG-101 RoHS-EN5395-5396 58QFN10x12x1 V01-08 JIG-101 selenium EN5395 Beryllium Compounds Information Enpirion en5395qi Information Enpirion en5396qi

    Asbestos MSDS

    Abstract: No abstract text available
    Text: SII GREEN PROCUREMENT STANDARDS Version 7 September 2012 Seiko Instruments Inc. S-G-3 Table of Contents Page PREFACE ・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・ 1


    Original
    PDF

    FRS240R

    Abstract: 1E14 2E12 FRS240D FRS240H
    Text: FRS240D, FRS240R, FRS240H 12A, 200V, 0.255 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Package Features • 12A, 200V, RDS on = 0.255Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original
    PDF FRS240D, FRS240R, FRS240H O-257AA 100KRAD 300KRAD 1000KRAD 3000KRAD MIL-S-19500 FRS240R 1E14 2E12 FRS240D FRS240H

    Untitled

    Abstract: No abstract text available
    Text: FRF250D, FRF250R, FRF250H 23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 23A, 200V, RDS on = 0.115S1 TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)


    OCR Scan
    PDF FRF250D, FRF250R, FRF250H 115S1 O-254AA 100KRAD 300KRAD 1000KRAD 3000KRAD MIL-S-19500

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7292 HARRIS S E M I C O N D U C T O R Formerly Available As FRF150R4 Radiation Hardened, N-Channel Power MOSFETs Features Description . 25A, 100V, rDS 0 N = 0.070£2 The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both


    OCR Scan
    PDF JANSR2N7292 FRF150R4 1000K MIL-S-19500

    Untitled

    Abstract: No abstract text available
    Text: FRF450D, FRF450R, FRF450H 9A, 500V, 0.615 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 9A, 500V, RDS on = 0.615Q. TO-254AA • Second G eneration Rad Hard M O SFET Results From New Design Concepts • G am m a - Meets Pre-Rad Specifications to 100KRAD(Si)


    OCR Scan
    PDF FRF450D, FRF450R, FRF450H O-254AA 100KRAD 300KRAD 1000KRAD 3000KRAD MIL-S-19500 -254AA

    Untitled

    Abstract: No abstract text available
    Text: FRS9140D, FRS9140R, FRS9140H 11 A, -100V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 11 A, -100V, RDS on = 0.315Q. TO-257AA • Second G eneration Rad Hard M O SFET Results From New Design Concepts • G am m a - Meets Pre-Rad Specifications to 100KRAD(Si)


    OCR Scan
    PDF FRS9140D, FRS9140R, FRS9140H -100V, O-257AA 100KRAD 300KRAD 1000KRAD 3000KRAD

    Untitled

    Abstract: No abstract text available
    Text: if^ S S FRS240D, FRS240R, FRS240H 12A, 200V, 0.255 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Package Features • 12A, 200V, RDS on = 0.255£i TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)


    OCR Scan
    PDF FRS240D, FRS240R, FRS240H O-257AA 100KRAD 300KRAD 1000KRAD 3000KRAD IL-S-19500 MIL-S-19500