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Abracon Corporation AX7PBF3-312.5000C XTAL OSC XO 312.5000MHZ LVPECL
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Abracon Corporation AX5PBF3-311.0400C OSC XO 311.04MHZ 2.5V LVPECL
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BF 331 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
7915 datasheet Abstract: 2SA1576UB Text: SPICE PARAMETER 2SA1576UB by ROHM TR Div. * Q2SA1576UB PNP BJT model * Date: 2006/11/30 .MODEL Q2SA1576UB PNP + IS=70.000E-15 + BF=266.38 + VAF=50.700 + IKF=.27914 + ISE=70.000E-15 + NE=1.7618 + BR=1.8730 + VAR=100 + IKR=2.0006 + ISC=270.82E-12 + NC=1.7915	Original	2SA1576UB Q2SA1576UB 000E-15 82E-12 937E-12 613E-12 92E-12 28E-9 7915 datasheet 2SA1576UB	PDF
7915 DATASHEET Abstract: BJT BF 331 2SA1774EB Text: SPICE PARAMETER 2SA1774EB by ROHM TR Div. * Q2SA1774EB PNP BJT model * Date: 2006/11/30 .MODEL Q2SA1774EB PNP + IS=70.000E-15 + BF=266.38 + VAF=50.700 + IKF=.27914 + ISE=70.000E-15 + NE=1.7618 + BR=1.8730 + VAR=100 + IKR=2.0006 + ISC=270.82E-12 + NC=1.7915	Original	2SA1774EB Q2SA1774EB 000E-15 82E-12 937E-12 613E-12 92E-12 28E-9 7915 DATASHEET BJT BF 331 2SA1774EB	PDF
NPN/transistor C 331 Abstract: TRANSISTOR bf959 BF959 equivalent BF959 bf959 on BF 331 TRANSISTORS transistor bf 254 Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF959 TO-92 Plastic Package BF 959 IS A SILICON NPN TRANSISTOR INTENDED FOR USE AT VERY HIGH FREQUENCIES.	Original	BF959 C-120 BF959Rev100801 NPN/transistor C 331 TRANSISTOR bf959 BF959 equivalent BF959 bf959 on BF 331 TRANSISTORS transistor bf 254	PDF
Q2SA1037AK Abstract: 2SA1037AK bf 331 331 transistor Text: SPICE PARAMETER 2SA1037AK by ROHM TR Div. * Q2SA1037AK PNP BJT model * Date: 2006/11/30 .MODEL Q2SA1037AK PNP + IS=70.000E-15 + BF=266.38 + VAF=50.700 + IKF=.27914 + ISE=70.000E-15 + NE=1.7618 + BR=1.8730 + VAR=100 + IKR=2.0006 + ISC=270.82E-12 + NC=1.7915	Original	2SA1037AK Q2SA1037AK 000E-15 82E-12 937E-12 613E-12 92E-12 28E-9 2SA1037AK bf 331 331 transistor	PDF
0449 Abstract: No abstract text available Text: SPICE PARAMETER IMZ2A * QIMZ2A_NPN BJT model * Date: 2006/11/30 .MODEL QIMZ2A_NPN NPN + IS=70.000E-15 + BF=277.08 + VAF=114.03 + IKF=1 + ISE=70.000E-15 + NE=1.8934 + BR=11.565 + VAR=100 + IKR=.11266 + ISC=1.0228E-12 + NC=1.3260 + NK=.71869 + RE=.2 + RB=13.897	Original	000E-15 0228E-12 342E-12 0230E-12 92E-12 25E-9 82E-12 0449	PDF
bf 331 Abstract: 2SA1576A Q2SA1576A 331 transistor 7915 DATASHEET 7915 transistor 7915 8035 BJT BF 331 transistor 331 Text: SPICE PARAMETER 2SA1576A by ROHM TR Div. * Q2SA1576A PNP BJT model * Date: 2006/11/30 .MODEL Q2SA1576A PNP + IS=70.000E-15 + BF=266.38 + VAF=50.700 + IKF=.27914 + ISE=70.000E-15 + NE=1.7618 + BR=1.8730 + VAR=100 + IKR=2.0006 + ISC=270.82E-12 + NC=1.7915 + RE=.2	Original	2SA1576A Q2SA1576A 000E-15 82E-12 937E-12 613E-12 92E-12 28E-9 bf 331 2SA1576A 331 transistor 7915 DATASHEET 7915 transistor 7915 8035 BJT BF 331 transistor 331	PDF
UMZ1N Abstract: 7915 BJT BF 167 Text: SPICE PARAMETER UMZ1N * QUMZ1N_NPN BJT model * Date: 2006/11/30 .MODEL QUMZ1N_NPN NPN + IS=70.000E-15 + BF=277.08 + VAF=114.03 + IKF=1 + ISE=70.000E-15 + NE=1.8934 + BR=11.565 + VAR=100 + IKR=.11266 + ISC=1.0228E-12 + NC=1.3260 + NK=.71869 + RE=.2 + RB=13.897	Original	000E-15 0228E-12 342E-12 0230E-12 92E-12 25E-9 82E-12 UMZ1N 7915 BJT BF 167	PDF
BJT BF 331 Abstract: No abstract text available Text: SPICE PARAMETER UML1N * QUML1N PNP BJT model * Date: 2006/11/30 .MODEL QUML1N PNP + IS=70.000E-15 + BF=266.38 + VAF=50.700 + IKF=.27914 + ISE=70.000E-15 + NE=1.7618 + BR=1.8730 + VAR=100 + IKR=2.0006 + ISC=270.82E-12 + NC=1.7915 + RE=.2 + RB=7.8035 + RC=1.0862	Original	000E-15 82E-12 937E-12 613E-12 92E-12 28E-9 0517E-9 3682E-12 9668E-9 BJT BF 331	PDF
EMZ2 Abstract: No abstract text available Text: SPICE PARAMETER EMZ2 * QEMZ2_NPN BJT model * Date: 2006/11/30 .MODEL QEMZ2_NPN NPN + IS=70.000E-15 + BF=277.08 + VAF=114.03 + IKF=1 + ISE=70.000E-15 + NE=1.8934 + BR=11.565 + VAR=100 + IKR=.11266 + ISC=1.0228E-12 + NC=1.3260 + NK=.71869 + RE=.2 + RB=13.897	Original	000E-15 0228E-12 342E-12 0230E-12 92E-12 25E-9 82E-12 EMZ2	PDF
BJT BF 167 Abstract: No abstract text available Text: SPICE PARAMETER IMZ1A * QIMZ1A_NPN BJT model * Date: 2006/11/30 .MODEL QIMZ1A_NPN NPN + IS=70.000E-15 + BF=277.08 + VAF=114.03 + IKF=1 + ISE=70.000E-15 + NE=1.8934 + BR=11.565 + VAR=100 + IKR=.11266 + ISC=1.0228E-12 + NC=1.3260 + NK=.71869 + RE=.2 + RB=13.897	Original	000E-15 0228E-12 342E-12 0230E-12 92E-12 25E-9 82E-12 BJT BF 167	PDF
7915 Abstract: 2SA933 331 transistor 2SA933AS transistor bjt 331 Q2SA933AS ISE70 Text: SPICE PARAMETER 2SA933AS by ROHM TR Div. * Q2SA933AS PNP BJT model * Date: 2006/11/30 .MODEL Q2SA933AS PNP + IS=70.000E-15 + BF=266.38 + VAF=50.700 + IKF=.27914 + ISE=70.000E-15 + NE=1.7618 + BR=1.8730 + VAR=100 + IKR=2.0006 + ISC=270.82E-12 + NC=1.7915 + RE=.2	Original	2SA933AS Q2SA933AS 000E-15 82E-12 937E-12 613E-12 92E-12 28E-9 7915 2SA933 331 transistor 2SA933AS transistor bjt 331 ISE70	PDF
BJT BF 167 Abstract: EMZ1 Text: SPICE PARAMETER EMZ1 * QEMZ1_NPN BJT model * Date: 2006/11/30 .MODEL QEMZ1_NPN NPN + IS=70.000E-15 + BF=277.08 + VAF=114.03 + IKF=1 + ISE=70.000E-15 + NE=1.8934 + BR=11.565 + VAR=100 + IKR=.11266 + ISC=1.0228E-12 + NC=1.3260 + NK=.71869 + RE=.2 + RB=13.897	Original	000E-15 0228E-12 342E-12 0230E-12 92E-12 25E-9 82E-12 BJT BF 167 EMZ1	PDF
7915 Abstract: BJT BF 167 Text: SPICE PARAMETER FMY1A * QFMY1A_NPN BJT model * Date: 2006/11/30 .MODEL QFMY1A_NPN NPN + IS=70.000E-15 + BF=277.08 + VAF=114.03 + IKF=1 + ISE=70.000E-15 + NE=1.8934 + BR=11.565 + VAR=100 + IKR=.11266 + ISC=1.0228E-12 + NC=1.3260 + NK=.71869 + RE=.2 + RB=13.897	Original	000E-15 0228E-12 342E-12 0230E-12 92E-12 25E-9 82E-12 7915 BJT BF 167	PDF
BJT BF 167 Abstract: No abstract text available Text: SPICE PARAMETER EMY1 * QEMY1_NPN BJT model * Date: 2006/11/30 .MODEL QEMY1_NPN NPN + IS=70.000E-15 + BF=277.08 + VAF=114.03 + IKF=1 + ISE=70.000E-15 + NE=1.8934 + BR=11.565 + VAR=100 + IKR=.11266 + ISC=1.0228E-12 + NC=1.3260 + NK=.71869 + RE=.2 + RB=13.897	Original	000E-15 0228E-12 342E-12 0230E-12 92E-12 25E-9 82E-12 BJT BF 167	PDF

QUMZ2N_NPN model Abstract: BJT BF 167 Text: SPICE PARAMETER UMZ2N * QUMZ2N_NPN BJT model * Date: 2006/11/30 .MODEL QUMZ2N_NPN NPN + IS=70.000E-15 + BF=277.08 + VAF=114.03 + IKF=1 + ISE=70.000E-15 + NE=1.8934 + BR=11.565 + VAR=100 + IKR=.11266 + ISC=1.0228E-12 + NC=1.3260 + NK=.71869 + RE=.2 + RB=13.897	Original	000E-15 0228E-12 342E-12 0230E-12 92E-12 25E-9 82E-12 QUMZ2N_NPN model BJT BF 167	PDF
BJT BF 167 Abstract: No abstract text available Text: SPICE PARAMETER UMY1N * QUMY1N_NPN BJT model * Date: 2006/11/30 .MODEL QUMY1N_NPN NPN + IS=70.000E-15 + BF=277.08 + VAF=114.03 + IKF=1 + ISE=70.000E-15 + NE=1.8934 + BR=11.565 + VAR=100 + IKR=.11266 + ISC=1.0228E-12 + NC=1.3260 + NK=.71869 + RE=.2 + RB=13.897	Original	000E-15 0228E-12 342E-12 0230E-12 92E-12 25E-9 82E-12 BJT BF 167	PDF
7915 Abstract: 7915 DATASHEET 331 transistor bf 331 transistor bjt 331 7915 transistor BJT BF 331 2SA2029 8035 bf 328 Text: SPICE PARAMETER 2SA2029 by ROHM TR Div. * Q2SA2029 PNP BJT model * Date: 2006/11/30 .MODEL Q2SA2029 PNP + IS=70.000E-15 + BF=266.38 + VAF=50.700 + IKF=.27914 + ISE=70.000E-15 + NE=1.7618 + BR=1.8730 + VAR=100 + IKR=2.0006 + ISC=270.82E-12 + NC=1.7915 + RE=.2	Original	2SA2029 Q2SA2029 000E-15 82E-12 937E-12 613E-12 92E-12 28E-9 7915 7915 DATASHEET 331 transistor bf 331 transistor bjt 331 7915 transistor BJT BF 331 2SA2029 8035 bf 328	PDF
UMF28N Abstract: No abstract text available Text: SPICE PARAMETER UMF28N * QUMF28N PNP BJT model * Date: 2006/11/30 .MODEL QUMF28N PNP + IS=70.000E-15 + BF=266.38 + VAF=50.700 + IKF=.27914 + ISE=70.000E-15 + NE=1.7618 + BR=1.8730 + VAR=100 + IKR=2.0006 + ISC=270.82E-12 + NC=1.7915 + RE=.2 + RB=7.8035 + RC=1.0862	Original	UMF28N QUMF28N 000E-15 82E-12 937E-12 613E-12 92E-12 28E-9 UMF28N	PDF
Q2SA1774 Abstract: 7915 2SA1774 331 transistor BJT BF 331 Text: SPICE PARAMETER 2SA1774 by ROHM TR Div. * Q2SA1774 PNP BJT model * Date: 2006/11/30 .MODEL Q2SA1774 PNP + IS=70.000E-15 + BF=266.38 + VAF=50.700 + IKF=.27914 + ISE=70.000E-15 + NE=1.7618 + BR=1.8730 + VAR=100 + IKR=2.0006 + ISC=270.82E-12 + NC=1.7915 + RE=.2	Original	2SA1774 Q2SA1774 000E-15 82E-12 937E-12 613E-12 92E-12 28E-9 7915 2SA1774 331 transistor BJT BF 331	PDF
331 transistor Abstract: No abstract text available Text: SPICE PARAMETER EMT2 by ROHM TR Div. * QEMT2 PNP BJT model * Date: 2006/11/30 .MODEL QEMT2 PNP + IS=70.000E-15 + BF=266.38 + VAF=50.700 + IKF=.27914 + ISE=70.000E-15 + NE=1.7618 + BR=1.8730 + VAR=100 + IKR=2.0006 + ISC=270.82E-12 + NC=1.7915 + RE=.2 + RB=7.8035	Original	000E-15 82E-12 937E-12 613E-12 92E-12 28E-9 331 transistor	PDF
7915 Abstract: No abstract text available Text: SPICE PARAMETER EMT1 by ROHM TR Div. * QEMT1 PNP BJT model * Date: 2006/11/30 .MODEL QEMT1 PNP + IS=70.000E-15 + BF=266.38 + VAF=50.700 + IKF=.27914 + ISE=70.000E-15 + NE=1.7618 + BR=1.8730 + VAR=100 + IKR=2.0006 + ISC=270.82E-12 + NC=1.7915 + RE=.2 + RB=7.8035	Original	000E-15 82E-12 937E-12 613E-12 92E-12 28E-9 7915	PDF
bf 333 transistor Abstract: bf 331 transistor Bf 331 Text: PNP Silicon High Voltage Transistor • • • • • BF 623 Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage Low capacitance Complementary type: BF 622 NPN Type Marking Ordering code for versions in bulk	OCR Scan	Q62702-F567 Q62702-F1053 bf 333 transistor bf 331 transistor Bf 331	PDF
b0349 Abstract: BF871S BF872S BF872S TELEFUNKEN BF869S BF 872 TRANSISTOR Bf 264 transistor BC 236 41 BF transistor TRANSISTOR C 2570 Text: TELEFUNKEN ELECTRONIC 17E ì> • fi^EOQ^b 0 Q C m 3 1 BF 870 S • BF 872 S TTHLIlIFÜÎWilîStlGsOelectronic Silicon PNP Epitaxial Planar RF Transistors r- 33-17 Applications: Video-B-class power stages in TV-receivers Features: • High reverse voltage	OCR Scan	00QTM31 BF870SBF872S T0126 15A3DIN b0349 BF871S BF872S BF872S TELEFUNKEN BF869S BF 872 TRANSISTOR Bf 264 transistor BC 236 41 BF transistor TRANSISTOR C 2570	PDF
mosfet J 3305 Abstract: 221A-06 72SM AN569 MTP7P06 TMOS Power FET Text: MOTOROLA SC XSTRS/R F bf i E D • b3t.72SM QDTflbTT 331 ■ HOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA MTP7P06 Designer's Data Sheet Pow er Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 7 AMPERES This TMOS Power FET is designed for medium voltage,	OCR Scan	MTP7P06 b3b7254 0CHfl703 mosfet J 3305 221A-06 72SM AN569 MTP7P06 TMOS Power FET	PDF

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BF 331 Price and Stock

Abracon Corporation AX7PBF3-312.5000C

Abracon Corporation AX5DBF3-311.0400C

Abracon Corporation AX7MBF3-312.5000C

Abracon Corporation AX5MBF3-312.5000C

Abracon Corporation AX5PBF3-311.0400C

BF 331 Datasheets Context Search

7915 datasheet

7915 DATASHEET

NPN/transistor C 331

Q2SA1037AK

0449

bf 331

UMZ1N

BJT BF 331

EMZ2

BJT BF 167

7915

BJT BF 167

7915

BJT BF 167

QUMZ2N_NPN model

BJT BF 167

7915

UMF28N

Q2SA1774

331 transistor

7915

bf 333 transistor

b0349

mosfet J 3305