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    BF 494 PNP Search Results

    BF 494 PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73128RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency PNP Transistor Array Visit Renesas Electronics Corporation
    ISL73096RHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    BF 494 PNP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ic 494

    Abstract: ZTX1151A
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1151A ISSUE 1 - JANUARY 1997 FEATURES * VCEO= -40V * 3 Amp Continuous Current * 5 Amp Pulse Current * Low Saturation voltage * High Gain C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER


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    PDF ZTX1151A ic 494 ZTX1151A

    BF 235

    Abstract: plc em 235 ZTX1147 ZTX1147A DSA003763
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1147A ISSUE 1 - JANUARY 1997 FEATURES * VCEO= -12V * 4 Amp Continuous Current * 20 Amp pulse Current * Low Saturation Voltage * High Gain C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER


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    PDF ZTX1147A BF 235 plc em 235 ZTX1147 ZTX1147A DSA003763

    150e-3

    Abstract: bf 494 transistor ZTX1149A
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1149A ISSUE 1 - January 1997 FEATURES * VCEO = - 25V * 3 Amp Continuous Current * 10 Amp Pulse Current * Low Saturation Voltage * High Gain C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER


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    PDF ZTX1149A 150e-3 bf 494 transistor ZTX1149A

    BF520

    Abstract: ic TT 2222 100mA-1A ZTX114
    Text: ZTX1049A NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FEATURES • VCEV = 80V • Very low saturation voltages • High gain • 20 amps pulse current APPLICATIONS • LCD backlight converters E-Line • Emergency lighting • DC-DC converters PINOUT


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    PDF ZTX1049A BF520 ic TT 2222 100mA-1A ZTX114

    ZHB6790

    Abstract: 500mA H-bridge NPN/PNP transistor sot223 partmarking 6 C BR27 npn-pnp dual SM-8 BIPOLAR TRANSISTOR
    Text: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6790 PRELIMINARY DATA SHEET ISSUE B JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 40V supply * 2 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6790


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    PDF ZHB6790 OT223) ZHB6790 500mA H-bridge NPN/PNP transistor sot223 partmarking 6 C BR27 npn-pnp dual SM-8 BIPOLAR TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6790 PRELIMINARY DATA SHEET ISSUE B JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 40V supply * 2 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6790


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    PDF ZHB6790 OT223)

    ZHB6718

    Abstract: 12 mje t 5029 npn transistor footprint NPN/PNP transistor sot223 partmarking 6 C ZHB6718 TYPICAL APPLICATION transistor bf 44 NPN SINGLE transistors ssot-6 E4
    Text: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6718 PRELIMINARY DATA SHEET ISSUE B - JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 20V supply * 2.5 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6718


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    PDF ZHB6718 OT223) ZHB6718 12 mje t 5029 npn transistor footprint NPN/PNP transistor sot223 partmarking 6 C ZHB6718 TYPICAL APPLICATION transistor bf 44 NPN SINGLE transistors ssot-6 E4

    Untitled

    Abstract: No abstract text available
    Text: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6718 PRELIMINARY DATA SHEET ISSUE B - JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 20V supply * 2.5 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6718


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    PDF ZHB6718 OT223)

    h6718

    Abstract: bf 494 transistor ZHB6718 ZHB6718 TYPICAL APPLICATION 12 mje t 5029 DSA003727 SM-8 BIPOLAR TRANSISTOR
    Text: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6718 PRELIMINARY DATA SHEET ISSUE B - JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 20V supply * 2.5 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6718


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    PDF ZHB6718 OT223) h6718 bf 494 transistor ZHB6718 ZHB6718 TYPICAL APPLICATION 12 mje t 5029 DSA003727 SM-8 BIPOLAR TRANSISTOR

    ZHB6790

    Abstract: diagram of bf 494 transistor transistor bf 494 "dual TRANSISTORs" pnp npn transistor Ic 1A datasheet NPN TP4030 DSA003728 SM-8 BIPOLAR TRANSISTOR npn-pnp dual
    Text: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6790 PRELIMINARY DATA SHEET ISSUE B JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 40V supply * 2 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6790


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    PDF ZHB6790 OT223) ZHB6790 diagram of bf 494 transistor transistor bf 494 "dual TRANSISTORs" pnp npn transistor Ic 1A datasheet NPN TP4030 DSA003728 SM-8 BIPOLAR TRANSISTOR npn-pnp dual

    shockley diode application

    Abstract: shockley diode transistor bipolar driver schematic diode shockley shockley diode SPICE MODELS spice shockley diode SPICE MODELS AP 494 Application Note BF 494 C shockley diode datasheet
    Text: Application Note 23 Issue 2 March 1996 Zetex SPICE Models Understanding Model Parameters and Applications Limitations Neil Chadderton Introduction SPICE was originally developed as a simulation tool for Integrated Circuit design SPICE being an acronym for


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    PDF 1970s. F632-79. shockley diode application shockley diode transistor bipolar driver schematic diode shockley shockley diode SPICE MODELS spice shockley diode SPICE MODELS AP 494 Application Note BF 494 C shockley diode datasheet

    BF520

    Abstract: ZTX1049A NPN Transistor VCEO 80V 100V TS16949 ZTX1149A transistor bf 494 ZTX114
    Text: ZTX1049A NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FEATURES • VCEV = 80V • Very low saturation voltages • High gain • 20 amps pulse current APPLICATIONS • LCD backlight converters E-Line • Emergency lighting • DC-DC converters PINOUT


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    PDF ZTX1049A BF520 ZTX1049A NPN Transistor VCEO 80V 100V TS16949 ZTX1149A transistor bf 494 ZTX114

    Untitled

    Abstract: No abstract text available
    Text: ZTX1049A NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FEATURES • VCEV = 80V • Very low saturation voltages • High gain • 20 amps pulse current APPLICATIONS • LCD backlight converters E-Line • Emergency lighting • DC-DC converters PINOUT


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    PDF ZTX1049A

    transistors BC 23

    Abstract: BF494A transistors BC 557b BF494B BHARAT elek 547B 548B 549B BC547A BF494
    Text: BHARAT ELEK/SENICOND DI 47E J> 14353^0 □□□□OOfl 3bT BELI SILICON SMALL SIGNAL DEVICE i r - 3 l- 0 f SILICON SMALL SIGNAL DEVICES QUICK REFERENCE CHART PLASTIC PACKAGES NPNIF/RF TRANSISTORS VCE Si Device No 1. 2. 3. 4. 5. 6. BF 494 BF494A BF494B BF 495


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    PDF r-31-0' BF494 BF494A BF494B BF495C BF495D transistors BC 23 transistors BC 557b BHARAT elek 547B 548B 549B BC547A

    TRANSISTOR BFW 11

    Abstract: BFW10 pins pin configuration of BFW10 BFW10 BF 494 C bf 494 transistor BF494 CIL 108 transistor bf 194b BF200 transistor
    Text: METAL-CAN & EPOXY TRANSISTORS CONTINENTAL DEVICE INDIA 3EE D • S3fl33T4 ODOQOlb T COMMERCIAL/ENTERTAINMENT APPLICATIONS VCEO VCBO VEBO hFE at bias Voíts Volts Volts min min/max min min Device Cob ts 1C VCE ICM PTA ICBO VCE sat fT mA Volts mA mW Volts MHz Pf nsec


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    PDF O-237 TRANSISTOR BFW 11 BFW10 pins pin configuration of BFW10 BFW10 BF 494 C bf 494 transistor BF494 CIL 108 transistor bf 194b BF200 transistor

    bfw10 transistor

    Abstract: pin configuration of BFW10 BFW10 pins bf 194 pin configuration CIL 108 transistor bf 194b transistor bf 179 transistor BF 245 PIN CONFIGURATION BF 494 BF 194 transistor
    Text: METAL-CAN & EPOXY TRANSISTORS CON TINENTAL DEVICE INDIA 3EE D • S3fl33T4 DDOOOlt T COMMERCIAL/ENTERTAINMENT APPLICATIONS VCEO VCBO VEBO hFE at bias Voíts Volts Volts min min/max min min Device Cob ts 1C VCE ICM PTA ICBO VCE sat fT mA Volts mA mW Volts MHz Pf nsec


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    PDF O-237 bfw10 transistor pin configuration of BFW10 BFW10 pins bf 194 pin configuration CIL 108 transistor bf 194b transistor bf 179 transistor BF 245 PIN CONFIGURATION BF 494 BF 194 transistor

    TRANSISTOR SE 135

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1149A ISSUE 1 - January 1997_ ~ FEATURES * V CEO = -2 5 V * 3 A m p C o n tin u o u s C u rre n t * 10 A m p Pulse C u rre n t * L o w S a tu ra tio n V o lta g e


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    PDF ZTX1149A TRANSISTOR SE 135

    Untitled

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 1 - JANUARY 1997 FEATURES * V C E O = -*0 V * 3 A m p C o n tin u o u s C u rre n t * 5 A m p P ulse C u rr e n t * * Low Saturation voltage High Gain ABSOLUTE M AXIM UM RATINGS. PARAM ETER SYM BOL


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    PDF ZTX1151A

    ULN2003NA

    Abstract: transistor af 178 ms4581p 8ch pnp DARLINGTON TRANSISTOR ARRAY DARLINGTON 3A 100V npn array pnp darlington array ULN ULN2004NA 54566P pnp transistor array uln TD62981P
    Text: [1] INDEX 1. IFD Family Tree [ 1 ] INDEX 1. IFD Family Tree [i]n t e r -@a c e g n v e r — Transistor-Array — Monolithic Bipolar Series Array Series |T r a n s i s t o r | [ A r r a y ] |DM O S| T r a n s i s t o r |A r r a y | — Multi-Chip — Module


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    PDF TD62M TD62C TD/TB62 N29B3a 54S63PA 54597p 54598PÜ 2786A UDN2580a ULN2003NA transistor af 178 ms4581p 8ch pnp DARLINGTON TRANSISTOR ARRAY DARLINGTON 3A 100V npn array pnp darlington array ULN ULN2004NA 54566P pnp transistor array uln TD62981P

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    Untitled

    Abstract: No abstract text available
    Text: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6790 PRELIM INARY DATA SH EET ISS U E B JU LY 1997 FEATURES * Compact package * * * * Low on state losses Low drive requirem ents Operates up to 40V supply 2 A m p continuous rating ^ L J SM-8 8 LEAD SOT223 PARTMARKING DETAIL - ZHB6790


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    PDF ZHB6790 OT223)

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    LDR 03

    Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
    Text: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren


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    RPY 86

    Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
    Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­


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