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    BF821 Price and Stock

    Nexperia BF821,235

    TRANS PNP 300V 0.05A TO236AB
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    DigiKey BF821,235 Cut Tape 6,446 1
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    BF821,235 Digi-Reel 6,446 1
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    BF821,235 Reel 10,000
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    Mouser Electronics BF821,235 4,816
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    Verical BF821,235 10,000 10,000
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    Nexperia BF821,215

    TRANS PNP 300V 0.05A TO236AB
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    DigiKey BF821,215 Digi-Reel 4,506 1
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    BF821,215 Cut Tape 4,506 1
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    BF821,215 Reel 3,000 3,000
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    Mouser Electronics BF821,215 78,894
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    Verical BF821,215 9,000 3,000
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    Arrow Electronics BF821,215 96,373 2,756
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    BF821,215 9,000 6 Weeks 3,000
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    BF821,215 737 6 Weeks 1
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    Newark BF821,215 Cut Tape 5,414 5
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    BF821,215 Reel 3,000
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    TTI BF821,215 Reel 15,000
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    TME BF821,215 5,772 1
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    Avnet Silica BF821,215 21,000 8 Weeks 3,000
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    EBV Elektronik BF821,215 8 Weeks 3,000
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    New Advantage Corporation BF821,215 39,000 1
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    Nexperia BF821-QR

    BF821-Q/SOT23/TO-236AB
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    DigiKey BF821-QR Reel 3,000
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    Avnet Americas BF821-QR Reel 6 Weeks 18,000
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    Mouser Electronics BF821-QR
    • 1 $0.34
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    • 1000 $0.072
    • 10000 $0.049
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    TTI BF821-QR Reel 15,000
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    TME BF821-QR 1
    • 1 $0.3158
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    Avnet Silica BF821-QR 195,000 8 Weeks 3,000
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    EBV Elektronik BF821-QR 18,000 8 Weeks 3,000
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    Nexperia BF821-QVL

    BF821-Q/SOT23/TO-236AB
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    DigiKey BF821-QVL Reel 10,000
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    Avnet Americas BF821-QVL Reel 6 Weeks 20,000
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    Mouser Electronics BF821-QVL
    • 1 $0.34
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    TTI BF821-QVL Reel 20,000
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    Avnet Silica BF821-QVL 30,000 8 Weeks 10,000
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    EBV Elektronik BF821-QVL 8 Weeks 10,000
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    Nexperia BF821235

    Trans GP BJT PNP 300V 0.05A 3-Pin TO-236AB T/R - Tape and Reel (Alt: BF821,235)
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    Avnet Americas BF821235 Reel 6 Weeks 20,000
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    Find more BF821 price and stock on Findchips.com

    BF821 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BF821 Continental Device India Silicon Epitaxial Transistors Original PDF
    BF821 Diotec Surface mount Si-Epitaxial PlanarTransistors Original PDF
    BF821 General Semiconductor Small Signal Transistors (PNP) Original PDF
    BF821 Kexin PNP High-Voltage Transistors Original PDF
    BF821 NXP Semiconductors BF821 - PNP high voltage transistors - Complement: BF820 ; fT min: 60 MHz; hFE max:>50 ; hFE min: 50 ; IC max: 50 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 300 V Original PDF
    BF821 Philips Semiconductors PNP High-Voltage Transistor Original PDF
    BF821 Rectron Semiconductor Original PDF
    BF821 Transys Electronics SILICON EPITAXIAL TRANSISTORS Original PDF
    BF821 TY Semiconductor PNP High-Voltage Transistors - SOT-23 Original PDF
    BF821 Continental Device India SOT-23 Transistors & Diodes Data Book 1995 Scan PDF
    BF821 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BF821 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BF821,215 NXP Semiconductors PNP high voltage transistors - Complement: BF820 ; fT min: 60 MHz; hFE max:>50 ; hFE min: 50 ; IC max: 50 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 300 V; Package: SOT23 (TO-236AB); Container: Tape reel smd Original PDF
    BF821,235 NXP Semiconductors PNP high voltage transistors - Complement: BF820 ; fT min: 60 MHz; hFE max:>50 ; hFE min: 50 ; IC max: 50 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 300 V; Package: SOT23 (TO-236AB); Container: Tape reel smd Original PDF
    BF821S Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BF821T/R NXP Semiconductors PNP high voltage transistors - Complement: BF820 ; fT min: 60 MHz; hFE max:>50 ; hFE min: 50 ; IC max: 50 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 300 V Original PDF
    BF821TR Philips Semiconductors PNP high-voltage transistor Original PDF
    BF821T/R Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    BF821 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistors 10 KW

    Abstract: BF821 BF823
    Text: Transys Electronics L I M I T E D SOT-23 Formed SMD Package BF821 BF823 SILICON EPITAXIAL TRANSISTORS P–N–P transistors Marking BF821 = 1W BF823 = 1Y PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1


    Original     		PDF OT-23 BF821 BF823 transistors 10 KW BF821 BF823

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BF821; BF823 PNP high-voltage transistors Product data sheet Supersedes data of 1999 Apr 15 2004 Jan 16 NXP Semiconductors Product data sheet PNP high-voltage transistors BF821; BF823 PINNING FEATURES • Low current max. 50 mA


    Original     		PDF BF821; BF823 BF820, BF822. BF821 MAM256 R75/04/pp6

    301 marking code PNP transistor

    Abstract: BF820 BF821 BF822 BF823 BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BF821; BF823 PNP high-voltage transistors Product specification Supersedes data of 1997 Apr 23 1999 Apr 15 Philips Semiconductors Product specification PNP high-voltage transistors BF821; BF823 FEATURES


    Original     		PDF M3D088 BF821; BF823 BF820, BF822. BF821 MAM256 301 marking code PNP transistor BF820 BF821 BF822 BF823 BP317

    BF821

    Abstract: BF823 transistors 10 KW
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BF821 BF823 SILICON EPITAXIAL TRANSISTORS P–N–P transistors Marking BF821 = 1W BF823 = 1Y PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


    Original     		PDF OT-23 BF821 BF823 C-120 BF821 BF823 transistors 10 KW

    BF821

    Abstract: BF823
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BF821 BF823 SILICON EPITAXIAL TRANSISTORS P–N–P transistors Marking BF821 = 1W


    Original     		PDF OT-23 BF821 BF823 C-120 BF821 BF823

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification BF821,BF823 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 High voltage max. 300 V . 1 0.55 Low current (max. 50 mA) +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1


    Original     		PDF BF821 BF823 OT-23 BF821

    smd transistor 1y

    Abstract: BF821 BF823
    Text: Transistors SMD Type PNP High-Voltage Transistors BF821,BF823 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 High voltage max. 300 V . 1 0.55 Low current (max. 50 mA) +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1


    Original     		PDF BF821 BF823 OT-23 BF821 smd transistor 1y BF823

    BF820

    Abstract: BF821 BF822 BF823 BF823 NXP
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF821; BF823 PNP high-voltage transistors Product data sheet Supersedes data of 1999 Apr 15 2004 Jan 16 NXP Semiconductors Product data sheet PNP high-voltage transistors BF821; BF823 FEATURES PINNING • Low current max. 50 mA


    Original     		PDF BF821; BF823 BF820, BF822. BF821 MAM256 R75/04/pp6 BF820 BF821 BF822 BF823 BF823 NXP

    BF823

    Abstract: PNP Epitaxial Silicon Transistor sot-23 BF820 BF821 BF822
    Text: BF821, BF823 Small Signal Transistors PNP FEATURES ♦ PNP Silicon Epitaxial Planar Transistors SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) .056 (1.43) .052 (1.33) 3 ♦ As complementary types, the NPN transistors BF820 and BF822 are recommended. .016 (0.4)


    Original     		PDF BF821, BF823 OT-23 BF820 BF822 OT-23 BF821 BF823 PNP Epitaxial Silicon Transistor sot-23 BF821

    BF820

    Abstract: BF821 BF822 BF823
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF821; BF823 PNP high-voltage transistors Product specification Supersedes data of 1999 Apr 15 2004 Jan 16 Philips Semiconductors Product specification PNP high-voltage transistors BF821; BF823 FEATURES PINNING • Low current max. 50 mA


    Original     		PDF BF821; BF823 BF820, BF822. BF821 MAM256 SCA76 BF820 BF821 BF822 BF823

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BF821 BF823 SILICON EPITAXIAL TRANSISTORS P–N–P transisto rs Marking BF821 = 1W BF823 = 1Y PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


    Original     		PDF OT-23 BF821 BF823 C-120

    BF820

    Abstract: BF821 BF822 BF823
    Text: BF820, BF822 Small Signal Transistors NPN FEATURES SOT-23 ♦ NPN Silicon Epitaxial Planar Transistors .122 (3.1) .118 (3.0) .016 (0.4) .056 (1.43) .052 (1.33) 3 ♦ As complementary types, the PNP transistors BF821 and BF823 are recommended. .016 (0.4)


    Original     		PDF BF820, BF822 OT-23 BF821 BF823 OT-23 BF820 BF820 BF822

    1Y SOT-23

    Abstract: No abstract text available
    Text: BF821, BF823 PNP Silicon Epitaxial Planar Transistors especially suited for application in class-B video output stages of TV receivers and monitors. A s complementary types, the NPN transistors BF820 and BF822 are recommended. Pin Configuration 1 = Collector, 2 = Base, 3 = Emitter.


    OCR Scan     		PDF BF821, BF823 BF820 BF822 BF821 OT-23 BF821 BF823 1Y SOT-23

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PNP high-voltage transistors BF821 ; BF823 FEATURES PINNING • Low current max. 50 mA PIN • High voltage (max. 300 V). 1 base 2 emitter 3 collector APPLICATIONS DESCRIPTION • Telephony and professional communication equipment.


    OCR Scan     		PDF BF821 BF823 BF820, BF822. BF821 BF823

    L7E transistor

    Abstract: BF820 BF821 BF822 BF823
    Text: • bb53^31 N AMER □□2M7DM 5T2 B A P X PHILIPS/DISCRETE L7E BF821 BF823 ]> SILICON EPITAXIAL TRANSISTORS P-N-P transistors in a microminiature plastic envelope intended for application in thick and thin-film circuits. Primarily intended fo r use in telephony and professional communication equipment. N-P-N


    OCR Scan     		PDF BF821 BF823 BF820, BF822 BF821 L7E transistor BF820 BF823

    Untitled

    Abstract: No abstract text available
    Text: BF821 BF823 SILICON EPITAXIAL TRANSISTORS P-N-P transistors Marking BF821 = IW BF823 = ÎY PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _J.0_ 2.8 0.14 Ö.09 0.48 0.38 0.70 0.50 3 Pin configuration 1.4 2.6 1 = BASE 2 = EMITTER 3 = COLLECTOR 1.2 2.4 R0.1 .004 '


    OCR Scan     		PDF BF821 BF823 6F821 G0G07flS

    Untitled

    Abstract: No abstract text available
    Text: BF821 BF823 HL SILICON EPITAXIAL TRANSISTORS P -N -P transistors M arking BF821 = 1W BF823 = 1Y PACKAGE OUTLINE DETAILS ALL DIM ENSIONS IN m m _3.0 2.8 0.48 0.14 038 '• ^ 0.09 0.70 0.50 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 1.4 2.4 1.2


    OCR Scan     		PDF BF821 BF823 BF821 35ACTERISTICS BF823

    BF821

    Abstract: BF823
    Text: BF821 BF823 SILICON EPITAXIAL TRANSISTORS P-N -P transistors Marking BF821 = 1W BF823 = 1Y PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm J5.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _l-°2_ 0.89 0.60 0.40 _2 .° 0_


    OCR Scan     		PDF BF821 BF823 BF821 BF823

    Untitled

    Abstract: No abstract text available
    Text: • bb53^31 D0S4704 STS B A P X N AMER PHILIPS/DISCRETE BF821 BF823 b?E D J V SILICON EPITAXIAL TRANSISTORS P-N-P transistors in a microminiature plastic envelope intended for application in thick and thin-film circuits. Primarily intended fo r use in telephony and professional communication equipment. N-P-N


    OCR Scan     		PDF D0S4704 BF821 BF823 BF820, BF822

    8F820

    Abstract: No abstract text available
    Text: BF820, BF822 NPN Silicon Epitaxial Planar Transistors especially suited for application in class-B video output stages of TV receivers and monitors. As complementary types, the PNP transistors BF821 and BF823 are recommended. Top View Pin configuration 1 = Collector, 2 = Base, 3 = Emitter.


    OCR Scan     		PDF BF820, BF822 BF821 BF823 BF820= OT-23 BF820 BF822 8F820

    AXm marking

    Abstract: No abstract text available
    Text: BF821 BF823 SILICON EPITAXIAL TRANSISTORS P-N-P transistors in a microminiature plastic package intended for application in thick and thin-film circuits. Primarily intended for use in telephony and professional communication equipment. N P-N complements are BF820, B F822 respectively.


    OCR Scan     		PDF BF821 BF823 BF820, BF823 AXm marking

    BF821

    Abstract: BF823
    Text: BF821 BF823 SILICON EPITAXIAL TRANSISTORS P-N -P transistors Marking BF821 = 1W BF823 = 1Y PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.48 0.38 0.14 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 J.02_ 0.60 0.40 0.89 _2 .00_ 1.80


    OCR Scan     		PDF BF821 BF823 BF821 BF823

    Untitled

    Abstract: No abstract text available
    Text: 'IL BF821 BF823 SILICON EPITAXIAL TRANSISTORS P-N -P transistors Marking BF821 = 1W BF823 = 1Y PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0. 2.8 0.48 TT3B Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 1.02 "” 5. 89^ 2.00_ 0.60 0.40 1.80


    OCR Scan     		PDF BF821 BF823

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PNP high-voltage transistors BF821 ; BF823 FEATURES PINNING • Low current max. 50 mA PIN • High voltage (max. 300 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • Telephony and professional communication equipment.


    OCR Scan     		PDF BF821 BF823 BF820, BF822. MAM256