Untitled
Abstract: No abstract text available
Text: Part Search Part Number BFG . Page 1 of 2 . . Size/Series BFG.0B.100.PCSG MECHANICAL DETAILS Shell Style/Model Keying Housing Material Cable Fixing Variant Request a quote 0B / B PERFORMANCE DETAILS OTHER CHARACTERISTICS BFG*: Cap for plug G key 1 key (alpha=0, plug: male contacts,
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CIAADRASR13c2Zsc213eENhIgA
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Untitled
Abstract: No abstract text available
Text: ACCESSOIRES Plug cap L øA B Bouchon pour fiche This plug cap can only be used with plugs fitted with a key G . Ce bouchon n'est utilisable qu'avec les fiches ayant le positionnement (G). Part Number Référence N BFG.0B.100.PCSG BFG.1B.100.PCSG BFG.2B.100.PCSG
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1N24B
Abstract: d-sub 9pin BFG 38 11898 12-step BFG 1G.24C8192-E2-5
Text: Absolute single-turn hollow shaft encoders BFF/BFG CANopen features • CANopen interface integrated • 13 bit resolution • programmable operating modes • programmable preset values BFG BFF general data mechanical data voltage supply 10 - 30 VDC with reverse polarity protection
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mc 3487
Abstract: BFG 1G.24C8192-E2-5
Text: Absolute hollow shaft encoders BFF/BFG SSI features • synchronized serial interface SSI • 12 Bit resolution BFG BFF general data mechanical data voltage supply 10 - 30 VDC 24C max. revolutions 12,000 /min max. supply current no load typ. 50 mA (at 24 VDC) (24C)
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12-pin
mc 3487
BFG 1G.24C8192-E2-5
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BFG194
Abstract: Q62702-F1321 BFG 38
Text: BFG 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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OT-223
BFG194
Q62702-F1321
Aug-22-1996
Q62702-F1321
BFG 38
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TD62064BFG
Abstract: HSOP16 TD62064 TD62064BP1G relay 8 pin
Text: TD62064BP1G/BFG TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic TD62064BP1G,TD62064BFG 4ch High-Current Darlington Sink Driver The TD62064BP1G and TD62064BFG are high-voltage, high-current darlington drivers comprised of four NPN darlington pairs. All units feature integral clamp diodes for
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TD62064BP1G/BFG
TD62064BP1G
TD62064BFG
TD62064BFG
TD62064BP1G
HSOP16
TD62064
relay 8 pin
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Untitled
Abstract: No abstract text available
Text: TD62064BP1G/BFG TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic TD62064BP1G,TD62064BFG 4ch High-Current Darlington Sink Driver The TD62064BP1G and TD62064BFG are high-voltage, high-current darlington drivers comprised of four NPN darlington pairs. All units feature integral clamp diodes for
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TD62064BP1G/BFG
TD62064BP1G
TD62064BFG
TD62064BFG
TD62064BP1G
DIP16
HSOP16
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ignition coil npn power darlington
Abstract: HSOP16 TD62064 TD62064BFG TD62064BP1G
Text: TD62064BP1G/BFG TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic TD62064BP1G,TD62064BFG 4ch High-Current Darlington Sink Driver The TD62064BP1G and TD62064BFG are high-voltage, high-current darlington drivers comprised of four NPN darlington pairs. All units feature integral clamp diodes for
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TD62064BP1G/BFG
TD62064BP1G
TD62064BFG
TD62064BFG
TD62064BP1G
ignition coil npn power darlington
HSOP16
TD62064
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Untitled
Abstract: No abstract text available
Text: TD62064BP1G/BFG TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic TD62064BP1G,TD62064BFG 4ch High-Current Darlington Sink Driver The TD62064BP1G and TD62064BFG are high-voltage, high-current darlington drivers comprised of four NPN darlington pairs. All units feature integral clamp diodes for
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TD62064BP1G/BFG
TD62064BP1G
TD62064BFG
TD62064BFG
TD62064BP1G
DIP16
HSOP16
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F1322
Abstract: BFG135A Q62702-F1322 GMA marking BFG135a amplifier
Text: BFG 135A NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 70mA to 130mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor
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130mA
OT-223
BFG135A
Q62702-F1322
900MHz
100mA
Dec-16-1996
F1322
Q62702-F1322
GMA marking
BFG135a amplifier
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TB62706BFG
Abstract: TB62706BNG
Text: TB62706BNG/BFG TOSHIBA Bi- CMOS INTEGRATED CIRCUIT SILICON MONOLITHIC TB62706BNG, TB62706BFG 16BIT SHIFT REGISTER, LATCHES & CONSTANT CURRENT DRIVERS The TB62706BNG, TB62706BFG are specifically designed for LED and LED DISPLAY constant current drivers. This constant current output circuits are able to set up external
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TB62706BNG/BFG
TB62706BNG,
TB62706BFG
16BIT
TB62706BFG
TB62706BNG
TB62706BNG
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TB62207
Abstract: No abstract text available
Text: TOSHIBA TB62207BF･TB62207BFG TOSHIBA BiCD Process Integrated Circuit - Silicon Monolithic TB62207BF･TB62207BFG Stepping Motor Driver/DC Motor Driver Select, DC-DC Converter and Reset Driven by Chopper Microstep Pseudo Sine Wave The TB62207BF/BFG is a dual stepping motor driver./DC motor driver
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TB62207BFï
TB62207BFG
TB62207BF/BFG
16-bit
TB62207
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TB62706BFG
Abstract: No abstract text available
Text: TB62706BNG/BFG TOSHIBA Bi−CMOS INTEGRATED CIRCUIT SILICON MONOLITHIC TB62706BNG,TB62706BFG 16BIT SHIFT REGISTER, LATCHES & CONSTANT CURRENT DRIVERS The TB62706BNG, TB62706BFG is specifically designed for LED and LED DISPLAY constant current drivers. This constant current output circuits is able to set up external
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TB62706BNG/BFG
TB62706BNG
TB62706BFG
16BIT
TB62706BNG,
TB62706BFG
TB62706BNG
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BFG235
Abstract: Q62702-F1432 TS1600
Text: BFG 235 NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 120mA to 250mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor
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120mA
250mA
OT-223
BFG235
Q62702-F1432
900MHz
200mA
Dec-13-1996
Q62702-F1432
TS1600
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BFG196
Abstract: Q62702-F1292
Text: BFG 196 NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fT = 7.5GHz F = 1.5 dB at 900MHz
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900MHz
OT-223
BFG196
Q62702-F1292
Dec-13-1996
Q62702-F1292
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BFG135A
Abstract: VPS05163 marking BFG
Text: BFG 135A NPN Silicon RF Transistor For low-distortion broadband amplifier 4 stages in antenna and telecommunication systems up to 2 GHz at collector currents from 70 mA to 130 mA 3 Power amplifiers for DECT and PCN systems 2 Integrated emitter ballast resistor
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VPS05163
BFG135A
OT-223
900MHz
100mA
Oct-26-1999
BFG135A
VPS05163
marking BFG
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TA2132BPG
Abstract: toko fM coil ift BFG 38
Text: TA2132BPG/BFG TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA2132BPG,TA2132BFG AM/FM Radio IC TA2132BPG, TA2132BFG are AM/FM Radio IC FM F/E + AM/FM IF which are designed for AM/FM Radios. FM Local Oscillation Voltage is set up low relativity, for NEW
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TA2132BPG/BFG
TA2132BPG
TA2132BFG
TA2132BPG,
TA2132BFG
TA2132BPG
Sn-37Pb
toko fM coil ift
BFG 38
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TA2132BPG
Abstract: TA2132BFG soshin bpf 2SK161 SFE10 SFU455B detector 10.7 mhz SFE10.7MA5 BFG 38
Text: TA2132BPG/BFG TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA2132BPG,TA2132BFG AM/FM Radio IC TA2132BPG, TA2132BFG are AM/FM Radio IC FM F/E + AM/FM IF which are designed for AM/FM Radios. FM Local Oscillation Voltage is set up low relativity, for NEW
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TA2132BPG/BFG
TA2132BPG
TA2132BFG
TA2132BPG,
TA2132BFG
TA2132BPG
soshin bpf
2SK161
SFE10
SFU455B
detector 10.7 mhz
SFE10.7MA5
BFG 38
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MLC850
Abstract: equivalent for transistor tt 2222 RF Power Transistor spice 2222 031 capacitor philips TT 2222 npn "RF Power Transistor" transistor tt 2222 NPN planar RF transistor NPN RF Amplifier RF POWER TRANSISTOR
Text: Product specification Philips Semiconductors NPN 2 G H z R F pow er transisto r BFG11 ; BFG 11/X FEATURES DESCRIPTION • High power gain NPN silicon planar epitaxial transistors encapsulated in a plastic, 4-pin dual-emitter SOT143 package. • High efficiency
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BFG11
BFG11/X
OT143
BFG11
BFG11/X
OT143.
711DflSb
MLC850
equivalent for transistor tt 2222
RF Power Transistor spice
2222 031 capacitor philips
TT 2222 npn
"RF Power Transistor"
transistor tt 2222
NPN planar RF transistor
NPN RF Amplifier
RF POWER TRANSISTOR
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GMA marking
Abstract: No abstract text available
Text: SIEMENS BFG 135A NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 G H z at collector currents from 70mA to 130mA • Power amplifiers for D ECT and PCN systems • Integrated emitter ballast resistor
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130mA
BFG135A
Q62702-F1322
OT-223
900MHz
IS211
GMA marking
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Untitled
Abstract: No abstract text available
Text: TO SHIBA THLY644031 BFG-80,-80L,-10,-10L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY644031BFG is a 4,194,304-word by 64-bit synchronous dynamic RAM module consisting of four TC59S6416BFT/BFTL DRAMs on a printed circuit board.
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THLY644031
BFG-80
304-WORD
64-BIT
THLY644031BFG
TC59S6416BFT/BFTL
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THLY648021 BFG-80,-80L,-10,-10L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY648021BFG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6416BFT/BFTL DRAMs on a printed circuit board.
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THLY648021
BFG-80
64-BIT
THLY648021BFG
608-word
TC59S6416BFT/BFTL
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Untitled
Abstract: No abstract text available
Text: THLY724031 BFG-80,-80L,-10,-10L TOSHIBA TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY724031BFG is a 4,194,304-word by 72-bit synchronous dynamic RAM module consisting of five TC59S6416BFT/BFTL DRAMs on a printed circuit board.
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THLY724031
BFG-80
304-WORD
72-BIT
THLY724031BFG
TC59S6416BFT/BFTL
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Untitled
Abstract: No abstract text available
Text: TO SH IB A THLY648031 BFG-80,-80L,-10,-10L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY648031BFG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6408BFT/BFTL DRAMs on a printed circuit board.
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THLY648031
608-WORD
64-BIT
THLY648031BFG
TC59S6408BFT/BFTL
144-pin
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