MGS731
Abstract: BFG480W MGS732 0805CS BP317
Text: APPLICATION INFORMATION 900 MHz low noise amplifier with the BFG480W Philips Semiconductors 900 MHz low noise amplifier with the BFG480W ABSTRACT • Description of the product The BFG480W, one of the Philips double polysilicon wideband transistors of the BFG400W series.
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BFG480W
BFG480W,
BFG400W
125006/01/pp8
MGS731
BFG480W
MGS732
0805CS
BP317
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BFG480W
Abstract: 0805CS BP317
Text: APPLICATION INFORMATION 2 GHz low noise amplifier with the BFG480W Philips Semiconductors 2 GHz low noise amplifier with the BFG480W ABSTRACT • Description of the product The BFG480W, one of the Philips double polysilicon wideband transistors of the BFG400W series.
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BFG480W
BFG480W,
BFG400W
125006/01/pp8
BFG480W
0805CS
BP317
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micro amplifier 471
Abstract: philips 23 BFG425W BP317 hewlett packard application note 972 stripline pcb
Text: APPLICATION INFORMATION 900 MHz driver amplifier with the BFG425W Philips Semiconductors Application information 900 MHz driver amplifier with the BFG425W ABSTRACT • Description of the product The BFG425W is one of the Philips double polysilicon wideband transistors of the BFG400W series.
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BFG425W
BFG425W
BFG400W
125006/01/pp8
micro amplifier 471
philips 23
BP317
hewlett packard application note 972
stripline pcb
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BFG425
Abstract: BFG425W BFG410W TRANSISTOR noise figure measurements 2 GHz LNA RNR-T45-96-B-773
Text: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-96-B-773 : T. Buss : 14-Nov-1996 : P.G. Transistors & Diodes, Development 2GHz LOW NOISE AMPLIFIER WITH THE BFG425W Abstract: This application note contains an example of a Low Noise Amplifier with the new BFG425W Double Poly
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RNR-T45-96-B-773
14-Nov-1996
BFG425W
BFG425W
BFG400W
100KHz
BFG425
BFG410W
TRANSISTOR noise figure measurements
2 GHz LNA
RNR-T45-96-B-773
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BFG403W
Abstract: 0805CS Series amplifier 900mhz 0805CS 900MHz LOW NOISE AMPLIFIER WITH THE BFG403W
Text: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-006 : T.F. Buss : Jan. 6 1997 : P.G. Transistors & Diodes, Development 900MHz LOW NOISE AMPLIFIER WITH THE BFG403W Abstract: This application note contains an example of a Low Noise Amplifier with the new BFG403W Double Poly
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RNR-T45-97-B-006
900MHz
BFG403W
BFG403W
900MHz,
900MHz:
0805CS
0805CS Series
amplifier 900mhz
900MHz LOW NOISE AMPLIFIER WITH THE BFG403W
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Untitled
Abstract: No abstract text available
Text: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-375 : T. Buss : 20 May 1997 : P.G. Transistors & Diodes, Development 2GHz BUFFER-AMPLIFIER WITH THE BFG410W Abstract: This application note contains an example of a Buffer-Amplifier with the new BFG410W Double Poly RFtransistor. The buffer is designed for a frequency f=2GHz. Performance at f=2GHz: Isolation S12~-31dB,
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RNR-T45-97-B-375
BFG410W
BFG410W
-31dB,
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BB142
Abstract: 43p transistor BFG425W 1K 1608 2K 0402 BFG410W TRANSISTOR noise figure measurements tdk VCO BFG425W APPLICATION 0402_PHILIPS
Text: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-45-98-B-0827 : Haris Duric & Robert Cloudt : 16 December 1998 : DSC-N, Development CDMA CELLULAR VCO WITH THE BFG425W, BFG410W AND VARACTOR BB142
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RNR-45-98-B-0827
BFG425W,
BFG410W
BB142
BFG425W
BFG410W
BB142
IS-95
15KHz)
30KHz)
43p transistor
1K 1608
2K 0402
TRANSISTOR noise figure measurements
tdk VCO
BFG425W APPLICATION
0402_PHILIPS
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L05 SMD
Abstract: CMP266 RNR-T45-96-B-1025 L6 PHILIPS transistor smd Sb1 BFG425W CMP401 BFG400W CMP409 CMP231
Text: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-96-B-1025 : T.F. Buss : 10 Dec. 1996 : P.G. Transistors & Diodes, Development IMPROVED IP3 BEHAVIOUR OF THE 900MHz LOW NOISE AMPLIFIER WITH THE BFG425W
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RNR-T45-96-B-1025
900MHz
BFG425W
RNR-T45-96-B-771
BFG425W
900MHz,
900MHz:
CMP257
CMP383
L05 SMD
CMP266
RNR-T45-96-B-1025
L6 PHILIPS
transistor smd Sb1
CMP401
BFG400W
CMP409
CMP231
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BFG425W
Abstract: 900mhz driver amplifier 900mhz DRIVER DESIGN philips c3 RF 900MHz
Text: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0688 : T. Buss : 26 Aug 1997 : P.G. Transistors & Diodes, Development 900MHz DRIVER-AMPLIFIER WITH ENABLE-SWITCH USING THE BFG425W Abstract:
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RNR-T45-97-B-0688
900MHz
BFG425W
BFG425W
900MHz.
900MHz,
900mhz driver
amplifier 900mhz
DRIVER DESIGN
philips c3
RF 900MHz
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BFG480W
Abstract: philips c3 PPAP 0805CS TRANSISTOR noise figure measurements BFG400W C327
Text: H Philips Semiconductors B.V. Report nr. Author Date Department : RNR-45-98-B-0703 : T.F. Buss / J.Bouwman : 28-10-1998 : Development DSC-N 900 MHz Driver with the BFG480W Abstract: This application note contains an example of a driver, designed for a frequency f=900MHz.
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RNR-45-98-B-0703
BFG480W
900MHz.
Pout11dBm,
OIP325dBm.
BFG400W
BFG480W
philips c3
PPAP
0805CS
TRANSISTOR noise figure measurements
C327
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2F1 SMD Transistor
Abstract: 2F2 SMD Transistor w2 smd transistor TRANSISTOR SMD w2 schematic diagram induction heating BFG425W smd transistor w2 2 GHz LNA BFG425W APPLICATION BFG410W
Text: Philips Semiconductors Application Note Ultra Low Noise Amplifiers for 900 and 2000 MHz with High IP3 by Korné Vennema Philips Semiconductors Slatersville, RI December 1996 #KV96-157 This application note describes four Low Noise Amplifier designs with the
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KV96-157
BFG410W
BFG425W,
BFG410W
BFG425W
BFG425W.
BFG400W
2F1 SMD Transistor
2F2 SMD Transistor
w2 smd transistor
TRANSISTOR SMD w2
schematic diagram induction heating
BFG425W
smd transistor w2
2 GHz LNA
BFG425W APPLICATION
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BGF425W
Abstract: BFG425W BFG400W BFC425W RT4000 BLV2046 HP 2531 AN98024 BGY1816 BGY1916
Text: APPLICATION NOTE 50 W base station power amplifier for DCS1800 and PCS1900 AN98024 Philips Semiconductors 50 W base station power amplifier for DCS1800 and PCS1900 CONTENTS 1 ABSTRACT 2 INTRODUCTION 3 PRE-DRIVER BFG425W 4 DRIVER (BGY1816/BGY1916) 5 FINAL STAGE (BLV2046)
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DCS1800
PCS1900
AN98024
BFG425W)
BGY1816/BGY1916)
BLV2046)
BGF425W
BFG425W
BFG400W
BFC425W
RT4000
BLV2046
HP 2531
AN98024
BGY1816
BGY1916
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BFG425W
Abstract: No abstract text available
Text: AN11449 Low Noise Flat Gain 40M~1GHz DVB-C LNA with BFG425W Rev.1 — 22 October 2013 Application note Document information Info Content Keywords BFG425W, 40M~1GHz LNA, DVB-C, Abstract This document provides circuit simulation, schematic, layout, BOM and typical EVB performance for a 40M ~ 1GHz DVB-C LNA
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AN11449
BFG425W
BFG425W,
BFG425W
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transistor bipolar driver schematic
Abstract: BFG425W RNR-T45-97-B-0787 2Ghz amplifier BFG425 BFG425W APPLICATION b0787
Text: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0787 : T. Buss : 29 Sept 1997 : P.G. Transistors & Diodes, Development 2GHz DRIVER-AMPLIFIER WITH THE BFG425W Abstract: This application note contains an example of a Driver-Amplifier with the new BFG425W Double Poly RFtransistor. The driver is designed for a frequency f=2GHz.
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RNR-T45-97-B-0787
BFG425W
BFG425W
15dBm
BFG400W
-30dBm,
BFG425W,
transistor bipolar driver schematic
RNR-T45-97-B-0787
2Ghz amplifier
BFG425
BFG425W APPLICATION
b0787
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BFG425W
Abstract: BFG425W APPLICATION RNR-T45-97-B-0686 transistor bipolar driver schematic Z048
Text: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0686 : T. Buss : 22 Aug1997 : P.G. Transistors & Diodes, Development 900MHz DRIVER-AMPLIFIER WITH THE BFG425W Abstract: This application note contains an example of a Driver-Amplifier with the new BFG425W Double Poly RFtransistor. The driver is designed for a frequency f=900MHz.
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RNR-T45-97-B-0686
Aug1997
900MHz
BFG425W
BFG425W
900MHz.
900MHz,
do30dBm,
-30dBm,
BFG425W APPLICATION
RNR-T45-97-B-0686
transistor bipolar driver schematic
Z048
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L05 SMD
Abstract: w05 smd transistor SMD W05 W05 transistor W05 SMD L6 PHILIPS CMP401 CMP281 CMP263 CMP286
Text: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-96-B-770 : T. Buss : 20-Jan-00 : P.G. Transistors & Diodes, Development 900MHz LOW NOISE AMPLIFIER WITH THE BFG410W Abstract: This application note contains an example of a Low Noise Amplifier with the new BFG410W Double Poly
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RNR-T45-96-B-770
20-Jan-00
900MHz
BFG410W
BFG410W
900MHz.
900MHz
CMP180
CMP210
L05 SMD
w05 smd transistor
SMD W05
W05 transistor
W05 SMD
L6 PHILIPS
CMP401
CMP281
CMP263
CMP286
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Philips npo 0805
Abstract: 5Ghz lna transistor datasheet BFG425W 0805CS Series BFG425W APPLICATION philips satellite systems w2 smd transistor 0805CS CMP230 CMP231
Text: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0584 : T.F. Buss : 16-07-97 : P.G. Transistors & Diodes, Development 1.5GHz LOW NOISE AMPLIFIER WITH THE BFG425W Abstract: This application note contains an example of a Low Noise Amplifier with the new BFG425W Double Poly
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RNR-T45-97-B-0584
BFG425W
BFG425W
CMP266
s10mi
CMP403
CMP351
CMP250
CMP270
Philips npo 0805
5Ghz lna transistor datasheet
0805CS Series
BFG425W APPLICATION
philips satellite systems
w2 smd transistor
0805CS
CMP230
CMP231
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