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    BFP360W Datasheets (1)

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    BFP360W Infineon Technologies NPN Silicon RF Transistor Original PDF

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    BFP36

    Abstract: No abstract text available
    Text: BFP360W NPN Silicon RF Transistor 3 Preliminary data 4  Low voltage/ low current operation  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 2  Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    PDF BFP360W VPS05605 OT343 1E-14 Jan-28-2003 BFP36

    BFP36

    Abstract: No abstract text available
    Text: BFP360W NPN Silicon RF Transistor 3 Preliminary data 4  Low voltage/ low current operation  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 2  Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    PDF BFP360W VPS05605 OT343 BFP36

    BFP36

    Abstract: No abstract text available
    Text: BFP360W NPN Silicon RF Transistor 3 Preliminary data 4  Low voltage/ low current operation  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 2  Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    PDF BFP360W VPS05605 OT343 Aug-20-2002 BFP36

    BFP360W

    Abstract: BFP36
    Text: BFP360W NPN Silicon RF Transistor 3 Preliminary data 4  Low voltage/ low current operation  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 2  Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    PDF BFP360W VPS05605 OT343 Jun-16-2003 BFP360W BFP36