Transistor BFP540
Abstract: No abstract text available
Text: BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 • Outstanding Gms = 21.5 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 45 - Line • Pb-free RoHS compliant package 1)
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BFP540
OT343
Transistor BFP540
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bfp540
Abstract: INFINEON ATS BGA420
Text: BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 • Outstanding Gms = 21.5 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 45 - Line • Pb-free RoHS compliant package 1)
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BFP540
OT343
bfp540
INFINEON ATS
BGA420
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BFP540
Abstract: No abstract text available
Text: BFP540 NPN Silicon RF Transistor 3 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding G ms = 21 dB Noise Figure F = 0.9 dB 2 • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFP540
VPS05605
OT343
50Ohm
-j100
Jan-28-2004
BFP540
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BFP540
Abstract: INFINEON ATS BGA420 Transistor BFP540
Text: BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 • Outstanding G ms = 21.5 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 45 - Line ESD Electrostatic discharge sensitive device, observe handling precaution!
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BFP540
OT343
BFP540
INFINEON ATS
BGA420
Transistor BFP540
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BFP540
Abstract: INFINEON application note
Text: SIEGET 45 BFP540 NPN Silicon RF Transistor Preliminary data 3 For highest gain low noise amplifier 4 at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB Gold metallization for high reliability 2 SIEGET 45 - Line 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFP540
VPS05605
OT343
50Ohm
-j100
Aug-09-2001
BFP540
INFINEON application note
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Untitled
Abstract: No abstract text available
Text: BFP540 Low Noise Silicon Bipolar RF Transistor • For highest gain and low noise amplifier 3 • Outstanding Gms = 21.5 dB at 1.8 GHz Minimum noise figure NFmin = 0.9 dB at 1.8 GHz 2 4 1 • Pb-free RoHS compliant and halogen-free package with visible leads
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BFP540
AEC-Q101
OT343
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BFP540
Abstract: 030232
Text: BFP540 NPN Silicon Germanium RF Transistor 3 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding G ms = 21 dB 2 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFP540
VPS05605
OT343
50Ohm
-j100
Aug-29-2003
BFP540
030232
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INFINEON ATS
Abstract: BFP540 BGA420
Text: BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 • Outstanding Gms = 21.5 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 45 - Line • Pb-free RoHS compliant package 1)
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Original
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PDF
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BFP540
OT343
INFINEON ATS
BFP540
BGA420
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Untitled
Abstract: No abstract text available
Text: BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 • Outstanding Gms = 21.5 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 45 - Line • Pb-free RoHS compliant package 1)
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Original
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PDF
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BFP540
OT343
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Untitled
Abstract: No abstract text available
Text: BFP540 NPN Silicon RF Transistor 3 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding Gms = 21.5 dB 2 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Original
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BFP540
VPS05605
OT343
50Ohm
Jul-22-2004
-j100
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Untitled
Abstract: No abstract text available
Text: BFP540 NPN Silicon RF Transistor 3 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding Gms = 21.5 dB 2 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Original
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PDF
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BFP540
VPS05605
OT343
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BFP540
Abstract: No abstract text available
Text: BFP540 NPN Silicon RF Transistor 3 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding Gms = 21.5 dB 2 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Original
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PDF
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BFP540
VPS05605
OT343
BFP540
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Untitled
Abstract: No abstract text available
Text: BFP540 NPN Silicon Germanium RF Transistor 3 4 For highest gain low noise amplifier at 1.8 GHz Outstanding Gms = 21 dB 2 Noise Figure F = 0.9 dB Gold metallization for high reliability 1 SIEGET 45 - Line VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Original
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BFP540
VPS05605
OT343
50Ohm
-j100
Jul-14-2003
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BFP540
Abstract: ma 8920 BGB540 GPS05605 T513 INFINEON transistor marking s-parameter RF POWER TRANSISTOR NPN S11 INFINEON T0559 69c3
Text: Data sheet, BGB540, Sept. 2002 BGB540 Active Biased RF Transistor MMIC Wireless Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2002-09-11 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München Infineon Technologies AG 2002.
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BGB540,
BGB540
D-81541
BGB540
BFP540.
GPS05605
BFP540
ma 8920
GPS05605
T513
INFINEON transistor marking
s-parameter RF POWER TRANSISTOR NPN
S11 INFINEON
T0559
69c3
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BF547A
Abstract: transistor bf 175 BFG65 equivalent BF547B BFG25AXD
Text: Philips Sem iconductors RF Wideband Transistors The New Generation Contents page PREFACE 3 SELECTION GUIDE 6 S-PARAMETERS 22 SPICE AND PACKAGE PARAMETERS 44 THERMAL CHARACTERISTICS 48 DEVICE DATA in alpha-num eric sequence 54 OUTLINES 442 INDEX 448 DEFINITIONS
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OCR Scan
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PDF
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LCD01
BF547A
transistor bf 175
BFG65 equivalent
BF547B
BFG25AXD
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