5252 F ic
Abstract: BFQ 540 application IC 7560 transistor BFQ 263 5252 F 1009
Text: BFQ 65 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figures D High transition frequence 3 2 94 9308 1 Marking: BFQ 65
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D-74025
5252 F ic
BFQ 540 application
IC 7560
transistor BFQ 263
5252 F 1009
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temic 0675
Abstract: BFQ 540 application
Text: BFQ 67 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF, and microwave frequencies. Features D Small feedback capacitance
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D-74025
temic 0675
BFQ 540 application
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BFQ71
Abstract: Q62702-F775 bfq 96
Text: NPN Silicon RF Transistor BFQ 71 ● For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA. ● Hermetically sealed ceramic package. ● HiRel/Mil screening available. ● CECC-type available: CECC 50002/260.
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Q62702-F775
BFQ71
Q62702-F775
bfq 96
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temic 0675
Abstract: MARKING ra BFQ 540 application Telefunken 2360 telefunken ra 100 BFQ 244
Text: BFQ 81 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features D Small feedback capacitance D Low noise figure D Low cross modulation 1 2 3 94 9280 Marking: RA Plastic case SOT 23
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D-74025
temic 0675
MARKING ra
BFQ 540 application
Telefunken 2360
telefunken ra 100
BFQ 244
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k 1191
Abstract: Z0 607 MA GP 652 Q62702-F1189
Text: NPN Silicon RF Transistor BFQ 82 ● For low-noise, high-gain amplifiers up to 2 GHz. ● Linear broadband applications at collector currents up to 40 mA. ● Hermetically sealed ceramic package. ● fT = 8 GHz F = 1.1 dB at 800 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions!
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Q62702-F1189
k 1191
Z0 607 MA GP 652
Q62702-F1189
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BFQ72
Abstract: Q62702-F776 s parameters transistor ac 151
Text: NPN Silicon RF Transistor BFQ 72 ● For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA. ● Hermetically sealed ceramic package. ● HiRel/Mil screening available. ● CECC-type available: CECC 50002/263. ESD: Electrostatic discharge sensitive device, observe handling precautions!
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Q62702-F776
BFQ72
Q62702-F776
s parameters
transistor ac 151
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BFR 965
Abstract: mpsa 46 BAW 62 SOT23 4148 SOD-123 bc 544 BRF91A smd bf MPS 808 BC 241 BFS 505 SMD
Text: Cross Reference Conventional Devices to SMD Conventional Devices SMDPackages Conventional Devices SOD-123 SMDPackage Conventional Devices SOT-23 (cont’d) SMDPackage SOT-23 (cont’d) BA 282 BA 582 BB 304 BB 804 MPSA 05 SMBTA 05 BA 389 BA 585 BC 337 BC 817
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OD-123
OT-23
OT-143
OT-89
BFR 965
mpsa 46
BAW 62 SOT23
4148 SOD-123
bc 544
BRF91A
smd bf
MPS 808
BC 241
BFS 505 SMD
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philips bfq
Abstract: FQ236A 236A
Text: Philips Semiconductors Product specification NPN video transistors BFQ236; BFQ236A FEATURES DESCRIPTION • High breakdow n voltages NPN vid e o tra n sisto r in a SO T223 plastic package. PNP com plem ents: BFQ 256 and BFQ 256A. • Low output capacitance
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BFQ236;
BFQ236A
MSB002
OT223
philips bfq
FQ236A
236A
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Transistor C G 774 6-1
Abstract: C G 774 6-1 a/Transistor C G 774 6-1 RLF100-11/12/Transistor C G 774 6-1
Text: 5SE D • A23StiGS dG04hlt. 7 ■ S IE G .* 7-^ Low Noise NPN Silicon Microwave Transistor BFQ 28 up to 4 GHz SIEMENS AKTIEN GESELLSCH AF _ BFQ 28 is a bipolar silicon NPN microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. State-of-the-art manufacturing methods
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A23StiGS
dG04hlt.
Q62702-F527
235b05
000Mb22
BFQ28
Transistor C G 774 6-1
C G 774 6-1
a/Transistor C G 774 6-1
RLF100-11/12/Transistor C G 774 6-1
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Untitled
Abstract: No abstract text available
Text: 35E D • 823b32Q QGlb'ìbS T « S I P NPN Silicon RF Transistor BFQ 81 SIEMENS/ SPCLi SEMICONDS _ • For low-noise amplifiers up to 2 GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 to 20 mA.
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823b32Q
62702-F1049
OT-23
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dm 0765
Abstract: BFQ196 siemens DM 321 VCE0518I BFQ 244 cerec
Text: SIEMENS BFQ 196 NPN Silicon RF Transistor Prelim inary Data • For low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA. 3 J • f t = 7.5 GHz F = 1.3 dB at 900 MHz
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Q62702-F1348
fl235b05
00b7253
dm 0765
BFQ196
siemens DM 321
VCE0518I
BFQ 244
cerec
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ZS 633
Abstract: ZS 1052 AC cerec BFQ645 617 300 MARKING 7C
Text: SIEM EN S NPN Silicon RF Transistor BFQ 645 Preliminary Data • For low-noise, high-gain amplifiers and medium power oscillators at collector currents up to 20 mA. • fr = 9 GHz F = 1 .9 d B a t2 G H z ESD: Electrostatic discharge sensitive device, observe handling precautions!
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vce05181
Q62702-F1283
235bQS
00b72b0
ZS 633
ZS 1052 AC
cerec
BFQ645
617 300
MARKING 7C
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BFQ28
Abstract: Q62702-F527 CJCO D 843 Transistor
Text: 5SE D fl23Sfc.GS aüG4hlt, 7 SIEG T- ?t^/ST BFQ28 Low Noise NPN Silicon Microwave Transistor up to 4 GHz SIEMENS AKTIENGESELLSCHAF BFQ 2 8 is a bipolar silicon NPN microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. State-of-the-art manufacturing methods
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fl23Sfc
Q62702-F527
BFQ28
Q62702-F527
CJCO
D 843 Transistor
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st ae gp 446
Abstract: AE GP 532 AE GP 531 ae gp 447 592/diode gp 421
Text: NPN Silicon RF Transistor BFQ 81 • For low -noise am plifiers up to 2 GHz and broadband analog and digital applications in telecom m unications system s at co lle cto r currents from 0.5 to 20 mA. £ C EC C -type available: CECC 50002/257. ESD: E lectrostatic discharge sensitive device, observe handling precautions!
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OT-23
st ae gp 446
AE GP 532
AE GP 531
ae gp 447
592/diode gp 421
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ph 4148
Abstract: f494 ph+4148+zener+diode PXTA14 BC546 SMD SMD BC547 BC327/BC517 BC327-40 SMD BST74 BFG 71
Text: Philips Semiconductors Surface Mounted Semiconductors Conversion List CONVERSION LIST FROM LEADED TO SMD TYPE LEADED SMD LEADED SMD B A 2 43 BA T18 BA W 62 BAW 56 B A 3 14 B A S 17 BA W 62 BAW 56W B A 4 80 BA T17 B A X 12 BAS29 BA481 BA T17 B A X 12 BA S31
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BAS29
BA481
BBY31
BAT81
BAS81
BBY40
BC847
BAT54
BC847A
BT2907
ph 4148
f494
ph+4148+zener+diode
PXTA14
BC546 SMD
SMD BC547
BC327/BC517
BC327-40 SMD
BST74
BFG 71
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5N521
Abstract: BFQ71 VCE05181 bfq 85 Q62702-F775 siemens Pm 90 87 transistor zo 103 MA 7S 714
Text: SIEMENS BFQ71 NPN Silicon RF Transistor • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available. B CECC-type available: CECC 50002/260.
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BFQ71
Q62702-F775
0235bG5
DGb713S
5N521
VCE05181
bfq 85
siemens Pm 90 87
transistor zo 103 MA 7S 714
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TRANSISTOR 131-6 BJ 946
Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise
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B3-B3715
B3715-X-X-7600
TRANSISTOR 131-6 BJ 946
transistor bc 564
transistor Bc 949 datenblatt
TRANSISTOR BC 545
MARKING CODE AGS bsp 2000
siemens datenbuch
bft99
mmic SMD amplifier marking code 19s
TRANSISTOR SMD MARKING CODE bc ru
DIODE smd marking 22-16
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BFT65
Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
Text: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions
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RPY 86
Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ
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LDR 03
Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Text: Halbleiter bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren
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pin configuration BFW 11
Abstract: BF063 BFP96 2N3570 BFP90A bfq 85 BFP91 BFT50 BFX89 2N5109
Text: 1. 1000 MHz C LA S S A LOW NOISE FOR SM ALL SIG N AL APPLICATIO NS Typ« I Pockog* ptot V B R C EO m ax. m in. (m W ) (V ) fr @ (M Hz) |m A ) C 22b* (pf) (V ) UM* (^B) (m A) > 15 6 g N TO-72 200 15 > 600 4 < 1,7* 10 2N 3570 2N 357) 2N 3572 N N N TO-72
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BFX89
BFT50
CB-233
BFP91*
CB-233
pin configuration BFW 11
BF063
BFP96
2N3570
BFP90A
bfq 85
BFP91
2N5109
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CJW SOT-23
Abstract: bfq 85 LS 1316 BFP91 BFT50 BFX89 pin configuration BFW 11
Text: 40. 900 MHz Packagi» V B R C E O min. ff @ *C (V) (M H z) (m A) 15 15 > 1300 25 c 12* NF ft lc / f Veut 'M O CMD (M H z) (m V) (dB) (dB) c 22b* (pF) (dB) (m A) S S 1 I Typ*» Polarity j C L A S S A LIN EA R FOR C A T V /M A T V A P P L IC A T IO N S BFX 89
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CB-71
O-11/'
O-117
CB-233
BFP91*
CB-233
CJW SOT-23
bfq 85
LS 1316
BFP91
BFT50
BFX89
pin configuration BFW 11
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S0642
Abstract: pin configuration BFW 11 BF520 BF519 BF654 BFP91 BFR92A BFS17 BFT50 BFX89
Text: 40. 900 MHz Packagi» V B R C E O min. ff @ *C (V) (M H z) (m A) 15 15 > 1300 25 c 12* NF ft lc / f Veut 'M O CMD (M H z) (m V) (dB) (dB) c 22b* (pF) (dB) (m A) S S 1 I Typ*» Polarity j C L A S S A LIN EA R FOR C A T V /M A T V A P P L IC A T IO N S BFX 89
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CB-71
O-11/'
O-117
BFR92A
BFH93A
BFS18
BFS19
BF654
BFS20
S0642
pin configuration BFW 11
BF520
BF519
BF654
BFP91
BFR92A
BFS17
BFT50
BFX89
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3570 1301
Abstract: BFP92 BFQ22 BFQ63 1521e 2N918 BFT50 cl2o 2N3570 2N 1309
Text: 1 . 1000 MHz class A low noise for small signal applications classe A faible bruit petit signal TYPE È oc o Q. fT p t o t V B R C E O m in . PAC KAG E m ax. Im W ) (V ) (M H z ) THOMSON-CSF @ lc C l2« @ V c b Gp C22b* I m A ) (p F ) (V ) Gu m * «dB)
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2N918
BFP92
cb-233
3570 1301
BFQ22
BFQ63
1521e
BFT50
cl2o
2N3570
2N 1309
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