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    BFQ TRANSISTORS Search Results

    BFQ TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BFQ TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    philips bfq

    Abstract: Video to VGA "Video Amplifiers" BFQ transistors Video Amplifiers AN95046 BFQ235A CR6927 BFV420 diode 226
    Text: Philips Semiconductors Video Transistors and Modules for Monitors Application notes The following application notes are available: 1. “Video Amplifiers for VGA/XGA Monitors, with BFQ235A”; reference number ETV93001; release date 08 February 1993. 2. “OSD Update Video Amplifiers for VGA/XGA Monitors, with BFQ235A”;


    Original     		PDF BFQ235A" ETV93001; ETV/AN93019; AN95046; BFQ221, AN97001; philips bfq Video to VGA "Video Amplifiers" BFQ transistors Video Amplifiers AN95046 BFQ235A CR6927 BFV420 diode 226

    Untitled

    Abstract: No abstract text available
    Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • • • 2SB1308 PNP Plastic-Encapsulate Transistors Power dissipation: PCM = 0.5W Tamb=25℃ Collector current: ICM = -3A Collector-base voltage: V(BR)CBO = -30V


    Original     		PDF 2SB1308 OT-89

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1308 TRANSISTOR PNP 1. BASE FEATURES z Power Transistor z Excellent DC current Gain z Low Collector-emitter Saturation Voltage 2. COLLECTOR 3. EMITTER


    Original     		PDF OT-89-3L OT-89-3L 2SB1308 -50mA, 30MHz

    MCC BFR

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • 2SB1308 PNP Plastic-Encapsulate Transistors Power dissipation: PCM = 0.5W Tamb=25℃


    Original     		PDF 2SB1308 -50Adc 30MHz) OT-89 MCC BFR

    2SB1308

    Abstract: No abstract text available
    Text: Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulated Transistors 2SB1308 FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V BR CBO: SOT-89 TRANSISTOR (PNP) 1. BASE 0.5 W (Tamb=25℃) -3 2. COLLECTOR1 A -30 3. EMITTER 2


    Original     		PDF OT-89 2SB1308 OT-89 -50mA 30MHz 2SB1308

    2SB1308

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB1308 FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V BR CBO: SOT-89 TRANSISTOR (PNP) 1. BASE 0.5 W (Tamb=25℃) -3 2. COLLECTOR1 A


    Original     		PDF OT-89 2SB1308 OT-89 -50ollector-base -50mA 30MHz 2SB1308

    2SB1308Q

    Abstract: 2sb1308r MCC BFR
    Text: MCC TM Micro Commercial Components Features x • • • • 2SB1308-P 2SB1308-Q 2SB1308-R   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# PNP Plastic-Encapsulate Transistors Case Material: Molded Plastic. UL Flammability


    Original     		PDF 2SB1308-P 2SB1308-Q 2SB1308-R 2SB1308Q 2sb1308r MCC BFR

    2sb1308p

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features x • • • • 2SB1308 2SB1308-P 2SB1308-Q 2SB1308-R PNP Plastic-Encapsulate Transistors Case Material: Molded Plastic. UL Flammability


    Original     		PDF 2SB1308 2SB1308-P 2SB1308-Q 2SB1308-R 2sb1308p

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components Features x • • • • 2SB1308-P 2SB1308-Q 2SB1308-R   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# PNP Plastic-Encapsulate Transistors Case Material: Molded Plastic. UL Flammability


    Original     		PDF 2SB1308-P 2SB1308-Q 2SB1308-R -20rrections,

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89 Plastic-Encapsulate Transistors 2SB1308 TRANSISTOR（PNP ） FEATURES Power dissipation PCM : 0.5 Collector current ICM : -3 Collector-base voltage V BR CBO : -30 ＳＯＴ－８９ １．ＢＡＳＥ


    Original     		PDF OT-89 2SB1308 OT-89-3L 500TYP 060TYP

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1308 TRANSISTOR PNP 1. BASE FEATURES z Power Transistor z Excellent DC current Gain z Low Collector-emitter Saturation Voltage 2. COLLECTOR 3. EMITTER


    Original     		PDF OT-89-3L OT-89-3L 2SB1308

    philips bfq

    Abstract: FQ236A 236A
    Text: Philips Semiconductors Product specification NPN video transistors BFQ236; BFQ236A FEATURES DESCRIPTION • High breakdow n voltages NPN vid e o tra n sisto r in a SO T223 plastic package. PNP com plem ents: BFQ 256 and BFQ 256A. • Low output capacitance


    OCR Scan     		PDF BFQ236; BFQ236A MSB002 OT223 philips bfq FQ236A 236A

    BFQ transistors

    Abstract: BFQ transistors 98 BFQ 58 BFQ57 BFQ196 bfq58 b20200 bfq59 siemens 350 98 5925B
    Text: T-3 I"Oí SIE M EN S A K T I E N G E S E L L S C H A F 47E D • ñ 2 3 S bQ S G Ü 5 b 57 ô 2 « S I E G HF-Bipolar-Transistoren / RF Bipolar Transistors Metal Ceramic Package NPN ID (II B B □ B □ 'c P,o. h V mA mW GHz dB BFQ 57 BFQ 58 16 16 35 30


    OCR Scan     		PDF fi23SbQS GD5b57fl O-117 BFQ transistors BFQ transistors 98 BFQ 58 BFQ57 BFQ196 bfq58 b20200 bfq59 siemens 350 98 5925B

    BFQ31

    Abstract: MI350 BFQ31AR "UHF Transistors" bfq31r BFQ31A
    Text: SOT23 NPN SILICON PLANAR VHF/UHF TRANSISTORS ISSU E 3 - JANUARY 1996 P A R T M A R K IN G D E T A IL S BFQ31 B F Q 3 1A - S2 - S4 B FQ 31A R - S5 BFQ 31R - S3 ABSOLUTE M A X IM U M RATINGS. PARAM ETER SYM BO L Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF BFQ31 BFQ31A BFQ31AR BFQ31R BFQ31 BFQ31A 10ftA, 100MHz 60MHz MI350 "UHF Transistors"

    philips bfq

    Abstract: bfq256 BFQ236 BFQ236A BFQ256A d0251
    Text: Philips Semiconductors bbS3131 GD5S112 HAPX P ro d u c t s p e c ific a tio n N AMER P H I L I P S / D I S C R E T E b7E PNP 1 GHz video transistors FEATURES BFQ256; BFQ256A P IN N IN G • High breakdown voltages • Low output capacitance 1 PIN D E S C R IP T IO N


    OCR Scan     		PDF DD5S112 BFQ256; BFQ256A BFQ236 BFQ236A OT223 OT223. MBB449 philips bfq bfq256 BFQ236A BFQ256A d0251

    fr91a

    Abstract: philips bfq FQ235a t122 25 3 FQ262a fr90a 122e BFR134 t122 25 10 t122 25 72
    Text: 22 Small Signal Leaded Devices Wideband Transistors cont. h FE R a tin g s Type P ackage v CEO V S O T -103 S O T -103 S O T -103 S O T -103 S O T -173 S O T -173 S O T -173 S O T -173 S O T -173 S O T -173 TO -72 S O T -173 S O T -122 S O T-37 TO -72 TO -72


    OCR Scan     		PDF BFG96 BFP96 BFP505 BFP520 BFP540 BFQ33C BFQ63 BFQ65 BFQ66 BFQ161 fr91a philips bfq FQ235a t122 25 3 FQ262a fr90a 122e BFR134 t122 25 10 t122 25 72

    Q2T2905

    Abstract: SN3351 3N208 q2t2222 TIS25 2N3808 2N3680 2N3809 2N381 T05 n3806
    Text: Multi Transistors Dual Bipolar M ATCHIN G SELECT!roR HFE 20% HFE VBE VBE 5 mV RATINGS 10% 3 mV U N M ATCH ED 2N2641 2N2644 2N2913 2N2914 2N2223* 2N2640* 2N2643* 2N2917 2N2918 2N2972 2N2973 2N2976 2N2977 2N3349* 2N3352* 2N3806 2N3807 2N4854 2N4855 2N3348*


    OCR Scan     		PDF 2N2060t 2N2223* 2N2223At 100/xA 2n2641 2n2640* 2N2639t 2n2644 2n2643* 2N2642I Q2T2905 SN3351 3N208 q2t2222 TIS25 2N3808 2N3680 2N3809 2N381 T05 n3806

    Video Amplifiers

    Abstract: BFV420 AN95046 CR6927 BFQ transistors
    Text: Philips Semiconductors Video Transistors and Modules for Monitors Application notes The following application notes are available: 1. “Video Amplifiers for V G A /XG A Monitors, with BFQ235A”; reference number ETV93001; release date 08 February 1993. 2.


    OCR Scan     		PDF BFQ235A" ETV93001; ETV/AN93019; AN95046; AN97001; release08 Video Amplifiers BFV420 AN95046 CR6927 BFQ transistors

    T343

    Abstract: No abstract text available
    Text: Concise Catalogue 1996 Philips Semiconductors RF & MICROWAVE SEMICONDUCTORS & MODULES DISCRETE SEMICONDUCTORS Wideband transistors THIR D-G ENER ATIO N NPN W IDEBAND TRANSISTO RS fT up to 8 GHz f-p/lg curve s ee chart package ceram ic SOT172 SOT143 SOT173


    OCR Scan     		PDF OT172 OT173 BFQ66 OT143 BFG67 BFG197 OT223 OT323 OT343 BFG67W T343

    bcw 918

    Abstract: SO3572R transistor NB B4 marking BSR16R BCW General Purpose Transistor 2907A BF BFr pnp transistor 2907A ses 554 Switching transistor 50115
    Text: micropackaged devices microboitiers ^ général purpose and switching transistor selector guide guide de sélection-transistors de commutation et usage général THOMSON-CSF Case TO'236 •c 0,5 . 0,8A 0,1 . 0,2A Type NPN PNP NPN PNP BCX 20 BCX 18 SO 2221


    OCR Scan     		PDF O-236 bcw 918 SO3572R transistor NB B4 marking BSR16R BCW General Purpose Transistor 2907A BF BFr pnp transistor 2907A ses 554 Switching transistor 50115

    BFQ43

    Abstract: BFQ43S lyp 809 BLW31 TRANSISTOR A1t
    Text: b^E » N AMER PHILIPS/DISCRETE • ^53^31 0DHÔ714 ODD ‘' BFQ43 BFQ43S V.H.F. POWER TRANSISTORS N-P-N silicon planar e pitaxial transistors intended fo r use in class-A, B o r C operated m ob ile tran sm itte rs w ith a nom inal supply voltage o f 13,5 V . T he transistors are resistance stabilized and guaranteed to w ith ­


    OCR Scan     		PDF BFQ43 BFQ43S BFQ43S BLW31 lyp 809 TRANSISTOR A1t

    TRANSISTOR 131-6 BJ 946

    Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
    Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise


    OCR Scan     		PDF B3-B3715 B3715-X-X-7600 TRANSISTOR 131-6 BJ 946 transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16

    BFT65

    Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
    Text: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions


    OCR Scan     		PDF

    s08b

    Abstract: No abstract text available
    Text: Temic S e m i c o n d u c t o r s Tape and Reel Standards Taping of SMT Devices T E M IC 's Transistors in SM D packages are available in an antistatic 8 m m blister tape in accordance w ith DIN IEC 2 6 8 -3 lo r autom atic com ponent insertion. The blister tape is a plastic strip w ith im pressed com ponent


    OCR Scan     		PDF 13-Mar-97 s08b