bss17
Abstract: BFY 99 Transistor BFR 30 BFR 30 transistor BFR 450 BFY 93 bfx 63 bfw 96 Transistor BFR 96 BFX97
Text: PROFESSIONAL TRANSISTORS continued m u > (s (5) \ œ œ •Q -a o ex. Ll_ z r i o £3. > < e X CO < E o 'i LU U_ .£= BFR10 NPN NPN BFR 11 NPIM B F R 36 BFR 37 NPN BFR 38 PNP BFR 90* NPN NPN BFR 91* B F R 96* NPN BFR9 7 /2N 3866 NPN B F R 98/2N 4427 NPN
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OCR Scan
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BFR10
BFR36
BFR96*
97/2N
98/TO-39
BFX97A
15/2N
16/2N
17/2N
18/2N
bss17
BFY 99
Transistor BFR 30
BFR 30 transistor
BFR 450
BFY 93
bfx 63
bfw 96
Transistor BFR 96
BFX97
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PDF
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Transistor BFR 96
Abstract: BFR 30 transistor Transistor BFR 35 BFT95 bfx19 bsx30 BFR 80 BFW17A BFR10 BFR36
Text: PROFESSIONAL TRANSISTORS continued m u > (s (5) \ œ œ •Q -a o ex. Ll_ z r i o £3. > < e X < o LU U_ .£= BFR10 N PN N PN BFR 11 NPIM B F R 36 BFR 37 N PN BFR 38 PNP BFR 90* NPN N PN BFR 91* B F R 96* N PN BFR9 7 /2N 3866 NPN B F R 98/2N 4427 NPN PNP
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OCR Scan
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BFR10
BFR36
BFR96*
97/2N
Transistor BFR 96
BFR 30 transistor
Transistor BFR 35
BFT95
bfx19
bsx30
BFR 80
BFW17A
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PDF
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Transistor BFR 35
Abstract: Transistor BFR 38 Transistor BFR Transistor BFR 97 K 2056 transistor Transistor BFR 39 transistor npn d 2058 transistor K 2056 Transistor BFR 98 Transistor BFR 91
Text: 2SC D • fl23SbOS Q0QMb74 T H S I E G NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers and High-Speed Switching Applications BFR 35 A BFR 35 AR 0 '7 Z3 I - / S 2 N 6619 SIEMENS AKTIENGESELLSCHAF ’4 BFR 35 A is an epitaxial NPN silicon planar RF transistor in TO 2 3 6 plastic package
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OCR Scan
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fl23SbOS
Q0QMb74
2N6619,
023SbOS
00G4b77
BFR35A
2N6619
Transistor BFR 35
Transistor BFR 38
Transistor BFR
Transistor BFR 97
K 2056 transistor
Transistor BFR 39
transistor npn d 2058
transistor K 2056
Transistor BFR 98
Transistor BFR 91
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PDF
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BFR 450
Abstract: BFW64 tpl 550 BFW17A BFR38 BFW63 BFX19 BFT95H BFR36 BFR96
Text: PROFESSIONAL TRANSISTORS continued ex. (5) (s \ œ •Q o œ -a Ll_ z £3. > 'i < o LU U_ .£= BFR10 NPN NPN BFR 11 NPIM B F R 36 B FR 37 NPN B FR 38 PNP BFR 90* NPN NPN B FR 91* B F R 96* NPN BF R97/2N 3866 NPN B F R 98/2N 4427 NPN PNP BFR 99 PNP BFT95
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OCR Scan
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BFR10
BFR36
BFR96*
97/2N
98/BFX
BFX18
BFR 450
BFW64
tpl 550
BFW17A
BFR38
BFW63
BFX19
BFT95H
BFR96
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PDF
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BFR 450
Abstract: BFR36 BFY 93 bft95 BFw 94 BFR10 BFR96 BFT95H BFW16A BFW17A
Text: PROFESSIONAL TRANSISTORS continued ex. (5) (s \ œ •Q o œ -a Ll_ z £3. > 'i < o LU U_ .£= BFR10 NPN NPN BFR 11 NPIM B F R 36 B FR 37 NPN B FR 38 PNP BFR 90* NPN NPN B FR 91* B F R 96* NPN BF R97/2N 3866 NPN B F R 98/2N 4427 NPN PNP BFR 99 PNP BFT95
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OCR Scan
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BFR10
BFR36
BFR96*
97/2N
BFR16
BFX31
BFX37
BFW43
BFW44
BFX90
BFR 450
BFY 93
bft95
BFw 94
BFR96
BFT95H
BFW16A
BFW17A
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PDF
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Transistor BFR 96
Abstract: Transistor BFR 30 bfr 547 Transistor BFR 191 silicon npn planar rf transistor sot 143 SOT-23R BFR 970 ZO 103 Telefunken Electronic BFR92
Text: BFR 92 / BFR 92 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 1 2 1 3 3 94 9280 BFR92 Marking: P1
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Original
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BFR92
BFR92R
D-74025
Transistor BFR 96
Transistor BFR 30
bfr 547
Transistor BFR 191
silicon npn planar rf transistor sot 143
SOT-23R
BFR 970
ZO 103
Telefunken Electronic
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PDF
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BFR92A
Abstract: Transistor BFR 450 BFR 67 BFR 94 Transistor BFR 35 Transistor BFR 91 Transistor BFR 67 BFR92AR BFR 450 Transistor BFR 30
Text: TELEFUNKEN Semiconductors BFR 92 A / BFR 92 A R Silicon NPN Planar RF Transistor Applications Wide band amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency 1 2 1 3 3 94 9280 BFR92A Marking Plastic case SOT 23
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Original
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BFR92A
BFR92AR
D-74025
Transistor BFR 450
BFR 67
BFR 94
Transistor BFR 35
Transistor BFR 91
Transistor BFR 67
BFR 450
Transistor BFR 30
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PDF
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Transistor BFR 90 application
Abstract: BFR93A bfr 93 a Transistor BFR 93 BFR 93 BFR93AR Transistor BFR marking R2 BFR 30 transistor bfr93
Text: TELEFUNKEN Semiconductors BFR 93 A / BFR 93 A R Silicon NPN Planar RF Transistor Applications Wide band amplifier up to GHz range. Features D High power gain D High transition frequency D Low noise figure 1 2 1 3 3 2 94 9280 BFR93A Marking: R2 Plastic case SOT 23
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Original
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BFR93A
BFR93AR
D-74025
Transistor BFR 90 application
bfr 93 a
Transistor BFR 93
BFR 93
Transistor BFR
marking R2
BFR 30 transistor
bfr93
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PDF
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Transistor BFR 30
Abstract: silicon npn planar rf transistor sot 143 zo 103 ma BFR 67 BFR93 bfr 705 BFR 30 transistor Transistor BFR 14 Transistor BFR 35 ZO 103
Text: BFR 93 / BFR 93 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 1 2 1 3 3 94 9280 BFR93 Marking: R1
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Original
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BFR93
BFR93R
D-74025
Transistor BFR 30
silicon npn planar rf transistor sot 143
zo 103 ma
BFR 67
bfr 705
BFR 30 transistor
Transistor BFR 14
Transistor BFR 35
ZO 103
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • /f = 8 GHz F = 1.2 dB at 900 MHz RHs Q62702-F1316 1= B li O BFR 183 CO ESP: Electrostatic discharge sensitive device, observe handling precaution!
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OCR Scan
|
Q62702-F1316
OT-23
BFR183
900MHz
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PDF
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PT8740
Abstract: PT8811 replace for 2N918 PT9780 mrf245 THOMSON-CSF PRODUCTS transistor pt4544 PT9788 PT8710 PT8828
Text: 4 0. 900 MHz class A linear for CATV/MATV applications f\ TYPE POLARITY classe A linéaire pour amplificateurs d'antenne PACKAGE @ V BR CEO min. (V) (M Hz) le Im A) C l2e C22b* (pF) l\IF @ (dB) BFX 89 BFY90 BFR 99 BFR 38 N N P P TO-72 TO-72 TO-72 TO-72
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OCR Scan
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T8710
SD1238
2N5126
2N918
2N5642
BM100-28
MM1603
MRF633
SD1145
PT8717
PT8740
PT8811
replace for 2N918
PT9780
mrf245
THOMSON-CSF PRODUCTS
transistor pt4544
PT9788
PT8710
PT8828
|
PDF
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Untitled
Abstract: No abstract text available
Text: 4 0. 900 MHz class A linear for CATV/MATV applications f\ TYPE POLARITY classe A linéaire pour amplificateurs d'antenne PACKAGE @ V BR CEO min. (V) (MHz) le Cl2e l\IF ImA) C22b* (pF) @ (dB) BFX 89 BFY90 BFR 99 BFR 38 N N P P TO-72 TO-72 TO-72 TO-72 15
|
OCR Scan
|
|
PDF
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BF272
Abstract: ampli lineaire AMPLI LINEAIRE FM Transistor BFR 96 if amplifier BF167 cb amplifier BF509 L 146 CB BF199
Text: 4 0. 900 MHz class A linear for CATV/MATV applications f\ TYPE POLARITY classe A linéaire pour amplificateurs d'antenne PACKAGE @ V BR CEO min. (V) (M Hz) le Im A) C l2e C22b* (pF) l\IF @ (dB) BFX 89 BFY90 BFR 99 BFR 38 N N P P TO-72 TO-72 TO-72 TO-72
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OCR Scan
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BF272
BF1300
CB-146
ampli lineaire
AMPLI LINEAIRE FM
Transistor BFR 96
if amplifier
BF167
cb amplifier
BF509
L 146 CB
BF199
|
PDF
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bfr 91
Abstract: THOMSON-CSF CANAL
Text: 4 0. 900 MHz class A linear for CATV/MATV applications f\ TYPE POLARITY classe A linéaire pour amplificateurs d'antenne PACKAGE @ V BR CEO min. (V) (MHz) le l\IF Cl2e @ C22b* ImA) (pF) (dB) BFX 89 BFY90 BFR 99 BFR 38 N N P P TO-72 TO-72 TO-72 TO-72 15
|
OCR Scan
|
|
PDF
|
|
MMBT5089LT1G
Abstract: MMBT5088 MMBT5088LT1 MMBT5088LT1G MMBT5089 MMBT5089LT1
Text: MMBT5088LT1G, MMBT5089LT1G Low Noise Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant 1 BASE MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage
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Original
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MMBT5088LT1G,
MMBT5089LT1G
MMBT5088
MMBT5089
MMBT5088LT1/D
MMBT5089LT1G
MMBT5088
MMBT5088LT1
MMBT5088LT1G
MMBT5089
MMBT5089LT1
|
PDF
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sot 23 marking code 2t
Abstract: MMBT4403LT1 MMBT4403LT1G MMBT4403LT3G
Text: MMBT4403LT1G Switching Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage
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Original
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MMBT4403LT1G
OT-23
O-236)
MMBT4403LT1/D
sot 23 marking code 2t
MMBT4403LT1
MMBT4403LT1G
MMBT4403LT3G
|
PDF
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MMBT4403LT1
Abstract: MMBT4403LT1G MMBT4403LT3G
Text: MMBT4403LT1G Switching Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage
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Original
|
MMBT4403LT1G
MMBT4403LT1/D
MMBT4403LT1
MMBT4403LT1G
MMBT4403LT3G
|
PDF
|
to236
Abstract: MMBD2838LT1G TO236 footprint MMBD2837LT1 MMBD2837LT1G MMBD2838LT1 MA6 diode
Text: MMBD2837LT1G, MMBD2838LT1G Monolithic Dual Switching Diodes Features http://onsemi.com • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ANODE 1 3 CATHODE 2 ANODE MAXIMUM RATINGS EACH DIODE Rating Peak Reverse Voltage Symbol Value
|
Original
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MMBD2837LT1G,
MMBD2838LT1G
MMBD2837LT1G
OT-23
O-236AB)
MMBD2837LT1/D
to236
MMBD2838LT1G
TO236 footprint
MMBD2837LT1
MMBD2837LT1G
MMBD2838LT1
MA6 diode
|
PDF
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sc-70 a6
Abstract: SBAS16WT1G sbas16wt 0095E-13
Text: BAS16WT1G, SBAS16WT1G Silicon Switching Diode Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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Original
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BAS16WT1G,
SBAS16WT1G
AEC-Q101
SC-70
BAS16WT1/D
sc-70 a6
sbas16wt
0095E-13
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PDF
|
Untitled
Abstract: No abstract text available
Text: MMBT4401L, SMMBT4401L Switching Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique
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Original
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MMBT4401L,
SMMBT4401L
MMBT4401LT1/D
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PDF
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PZTA96ST1G
Abstract: No abstract text available
Text: PZTA96ST1G High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 2,4 MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO −450 Vdc Collector−Base Voltage
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Original
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PZTA96ST1G
OT-223
O-261)
ZTA96G
PZTA96ST1/D
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PDF
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Untitled
Abstract: No abstract text available
Text: NDF60N360U1, NDD60N360U1 N-Channel Power MOSFET 600 V, 360 mW Features http://onsemi.com • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS TJ = 25°C unless otherwise noted Parameter
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Original
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NDF60N360U1,
NDD60N360U1
NDF60N360U1/D
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PDF
|
Untitled
Abstract: No abstract text available
Text: BAS16TT1G Silicon Switching Diode Features • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com MAXIMUM RATINGS TA = 25C Symbol Max Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IF 200
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Original
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BAS16TT1G
BAS16TT1/D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PZTA96ST1G High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 2,4 BASE 1 MAXIMUM RATINGS Symbol Value Unit Collector−Emitter Voltage VCEO −450 Vdc Collector−Base Voltage
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Original
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PZTA96ST1G
PZTA96ST1/D
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PDF
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