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    Infineon Technologies AG BFS-380L6-E6327

    RF TRANS 2 NPN 9V 14GHZ TSLP-6-1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BFS-380L6-E6327 Reel 15,000
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    Infineon Technologies AG BFS-386L6-E6327

    RF TRANS 2 NPN 6V 14GHZ TSLP-6-1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BFS-386L6-E6327 Reel 15,000
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    The Ohio Nut And Bolt Co BFS38167

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DB Roberts BFS38167 930
    • 1 $0.4646
    • 10 $0.4646
    • 100 $0.3265
    • 1000 $0.257
    • 10000 $0.257
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    BFS38 Datasheets (26)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFS38 Ferranti Semiconductors Shortform Data Book 1971 Short Form PDF
    BFS38 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    BFS38 Ferranti Semiconductors Micro-Miniature Semiconductors and Silicon Networks 1977 Scan PDF
    BFS38 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFS38 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BFS38 Unknown Shortform Electronic Component Datasheets Short Form PDF
    BFS38 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BFS38 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BFS38 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BFS380L6 Infineon Technologies NPN Silicon RF Transistor Original PDF
    BFS380L6E6327 Infineon Technologies TRANS GP BJT NPN 6V 0.08A 6T Original PDF
    BFS380L6E6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR GP BJT NPN 6V TSLP-6 Original PDF
    BFS 380L6 E6327 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR GP BJT NPN 6V TSLP-6 Original PDF
    BFS386L6 Infineon Technologies NPN Silicon RF Transistor Original PDF
    BFS386L6E6327 Infineon Technologies TRANS GP BJT NPN 6V 0.08A 6T Original PDF
    BFS386L6E6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR ARRAY DUAL NPN TSLP-6 Original PDF
    BFS 386L6 E6327 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR ARRAY DUAL NPN TSLP-6 Original PDF
    BFS38A Ferranti Semiconductors Shortform Data Book 1971 Short Form PDF
    BFS38A Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    BFS38A Ferranti Semiconductors Micro-Miniature Semiconductors and Silicon Networks 1977 Scan PDF

    BFS38 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BFS386L6

    Abstract: tr1150
    Text: BFS386L6 NPN Silicon RF Transistor 4 Preliminary data 3 5 2 6  Low voltage/ low current operation 1  For low noise amplifiers  For oscillators up to 3.5 GHz and Pout > 10 dBm  Low noise figure: TR1: 1.0dB at 1.8 GHz P-TSLP-6-1 TR2: 1.1 dB at 1.8 GHz 6


    Original     		PDF BFS386L6 Feb-28-2002 BFS386L6 tr1150

    BFR360L3

    Abstract: BFR380L3 BFS386L6 tr1150
    Text: BFS386L6 NPN Silicon RF Transistor 4 Preliminary data  Low voltage/ low current operation 3 5  For low noise amplifiers 2 6  For oscillators up to 3.5 GHz and Pout > 10 dBm 1  Low noise figure: TR1: 1.0dB at 1.8 GHz TR2: 1.1 dB at 1.8 GHz  Built in 2 Transistors TR1: die as BFR360L3,


    Original     		PDF BFS386L6 BFR360L3, BFR380L3) Jun-11-2003 BFR360L3 BFR380L3 BFS386L6 tr1150

    Untitled

    Abstract: No abstract text available
    Text: BFS380L6 NPN Silicon RF Transistor* • High current capability and low figure for 4 3 5 wide dynamic range application 2 6 • Low voltage operation 1 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz • Built in 2 transistors TR1, TR2: die as BFR380L3


    Original     		PDF BFS380L6 BFR380L3)

    Untitled

    Abstract: No abstract text available
    Text: BFS386L6 NPN Silicon RF Transistor* • Low voltage/ low current operation 4 • For low noise amplifiers 3 5 • For oscillators up to 3.5 GHz and Pout > 10 dBm 2 6 1 • Low noise figure: TR1: 1.0dB at 1.8 GHz TR2: 1.1 dB at 1.8 GHz • Built in 2 Transistors TR1: die as BFR360L3,


    Original     		PDF BFS386L6 BFR360L3, BFR380L3) BFS38ay

    BFR380L3

    Abstract: BFS380L6
    Text: BFS380L6 NPN Silicon RF Transistor 4 Preliminary data  High current capability and low figure for 3 5 wide dynamic range application 2 6  Low voltage operation 1  Ideal for low phase noise oscillators up to 3.5 GHz  Low noise figure: 1.1 dB at 1.8 GHz


    Original     		PDF BFS380L6 BFR380L3) Jun-11-2003 BFR380L3 BFS380L6

    Untitled

    Abstract: No abstract text available
    Text: BFS380L6 NPN Silicon RF Transistor 4 Preliminary data 3 5 2 6  High current capability and low figure for 1 wide dynamic range application  Low voltage operation  Ideal for low phase noise oscillators up to 3.5 GHz P-TSLP-6-1  Low noise figure: 1.1 dB at 1.8 GHz


    Original     		PDF BFS380L6 Feb-28-2002

    cdma Booster schematic

    Abstract: uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A DVB-T Schematic set top box BF776 DVB-t receiver schematic diagram microstrip Antenna 5.8ghz
    Text: May 2007 Product & Application Guide 2007 Small Signal Discretes www.infineon.com/smallsignaldiscretes Table of Contents Applications Mobile Communication ……………. Consumer …………………………………. Automotive & Industrial.………….


    Original     		PDF B132-H9014-X-X-7600 NB07-1094 cdma Booster schematic uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A DVB-T Schematic set top box BF776 DVB-t receiver schematic diagram microstrip Antenna 5.8ghz

    bcy79 equivalent

    Abstract: 2N3053 equivalent 2N929 bcy78 equivalent 2N2905a equivalent f025 2N930 BAW63 BAW63A BFS36A
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A bcy79 equivalent 2N3053 equivalent bcy78 equivalent 2N2905a equivalent f025

    2N4427 equivalent

    Abstract: ZT Ferranti 2N2369 equivalent 2N2708 BZX88-C4V3 diode BAW67 f025 ic marking z7 J 2N2369 marking G5
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A 2N4427 equivalent ZT Ferranti 2N2369 equivalent 2N2708 BZX88-C4V3 diode BAW67 f025 ic marking z7 J 2N2369 marking G5

    BC239C equivalent

    Abstract: BC550C equivalent bc237a equivalent bc238b equivalent BC548C equivalent bc238a equivalent bc108b equivalent bc549c equivalent bc183 equivalent BC237B equivalent
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A BC239C equivalent BC550C equivalent bc237a equivalent bc238b equivalent BC548C equivalent bc238a equivalent bc108b equivalent bc549c equivalent bc183 equivalent BC237B equivalent

    BFS36

    Abstract: BS9365 marking W4 NPN 2N2475 BFS37 f025 MARKING BS 2N929 2N930 BAW63
    Text: MICRO-E MICRO-E PRODUCT LIST W here approval for military use has been obtained the appropriate British Standards number is indicated under B .S . number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A marking W4 NPN 2N2475 BFS37 f025 MARKING BS

    BSS56

    Abstract: f025 ic marking z7 2N929 2N930 BAW63 BAW63A BFS36 BFS36A BS9302
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A BSS56 f025 ic marking z7

    BC107 equivalent transistors

    Abstract: 2N2475 2N929 2N930 BAW63 BAW63A BFS36 BFS36A BS9302 BS9365
    Text: MICRO-E MICRO-E PRODUCT LIST W here approval for military use has been obtained the appropriate British Standards number is indicated under B .S . number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A BC107 equivalent transistors 2N2475

    bc109 Transistor Equivalent list

    Abstract: npn transistor w6 2N2484 equivalent transistors transistor equivalent table bc109 transistor BC109 ZTX341 f021 2N930 BAW63 BFS36
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A bc109 Transistor Equivalent list npn transistor w6 2N2484 equivalent transistors transistor equivalent table bc109 transistor BC109 ZTX341 f021

    BS9365

    Abstract: BS9302 f025 BAW68 marking Z9 F008 BZX88-C5V1 2N2475 BFS46A BZX88-C5V6
    Text: MICRO-E MICRO-E PRODUCT LIST W h ere approval for military use has been obtained the appropriate British Standards number is indicated under B .S . number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A f025 BAW68 marking Z9 F008 BZX88-C5V1 2N2475 BFS46A BZX88-C5V6

    2N2475

    Abstract: BFS36 BFS38 BFS46 BFS41 2N2605 2N930 BFS36A BFS42 BFS38A
    Text: M ICRO-E CHARACTERISTICS AT 25°C p-n - -P n -p - n l\/l C I'M1U 1IPIV V/1I CURRENT GENERAL PURPOSE IVI tU TRANSISTORS Parameter BFS38A M in. Test Conditions M in. 25 - - 35 v CBO Rated Max. - VCEO sus l c = 5mA, Iß —0 25 v EBCi Rated Max. - 5 >CBO V c b = V c b O f*atec* ^ ax' ^E= 0


    OCR Scan     		PDF BFS38A BFS38 BFS39 BFS40A BFS40 BFS41 BFS36 2N930 BFS37 2N2605 2N2475 BFS38 BFS46 BFS41 2N2605 BFS36A BFS42 BFS38A

    2N2369 SOT-23

    Abstract: BAW66 diode marking w8 BZX88-C7V5 BAW* diode W6 marking sot-23 baw 92 Z6 DIODE BZX88C8V2 BAW63A
    Text: SWITCHING DIODES TABLE 2 - SILICON PLANAR EPITAXIAL HIGH SPEED SWITCHING DIODES The BAV and BAW series of micro-miniature plastic encapsulated single diode and double diode pairs are primarily intended for use in thick and thin film hybrid circuits. Application areas include fast


    OCR Scan     		PDF BAW63 BZX88-C10 BZX88-C11 BZX88-C12 BZX88-C13 BZX88-C15 BZX88-C16 BZX88-C18 BZX88-C20 BZX88-C22 2N2369 SOT-23 BAW66 diode marking w8 BZX88-C7V5 BAW* diode W6 marking sot-23 baw 92 Z6 DIODE BZX88C8V2 BAW63A

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


    OCR Scan     		PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    BFS98

    Abstract: BSV33 2N2475 2N4127 BFS96 BFS97 ZT180 ZT181 ZT182 ZT183
    Text: SILICON TRANSISTORS Planar Medium Power and Switching p-n-p Maximum Ratings Type No. v CBO v CEO(sus) Ve b o Characteristics ^tot at 2 5°C amb. mW VCE(sat) ^FE Ic BO at max. volts h min. at >0 mA Outline Draw­ ing •c mA ■ b mA min. max. -1 5 0 -1 5 0


    OCR Scan     		PDF BFS96 BFS97 BFS98 -150t BFS59-61 ZTX510 BSV33 BFS36 2N930 BFS37 2N2475 2N4127 ZT180 ZT181 ZT182 ZT183

    ZT1483

    Abstract: ZT1701 BCW23 2N929 ZT2120 2N2475 BCW21 2N3707 BC107 BC108
    Text: E-Line Transistors Applications C h a rt SILICON TRANSISTORS 10uA 100mA 1mA 10mA 100mA 1A The wide diversity of applications for which E-Une plastic encapsulated transistors are suitable is shown on the diagram. Additional types designed for more specialized purposes are listed


    OCR Scan     		PDF ZTX330, ZTX331, BCW20 BCW22 2N3707 2N929 ZTX107 ZTX108 ZTX1I09 BC107 ZT1483 ZT1701 BCW23 ZT2120 2N2475 BCW21 BC108

    WIMA TFM

    Abstract: Beckman 785-1 mkb3 wima TFM-.1UF-160V bf197 diode zener ph c9v1 2N4286 2N3642 bf197p transistor 2N2359A
    Text: TENTH EDITION ELECTRONIC COMPONENTS CATALOGUE FAIRCHILD FERRANTI WAYCOM comway BECKMAN SPRAGUE ASTRALUX REDPOINT GREENPAR electronics limited MOLEX MARKET STREET BRACKNELL BERKS RG121JU RADIATRON TEL: SALES, BRACKNELL 0344 24765 TELEX:847201 ERG HELLERMANN


    OCR Scan     		PDF RG121JU WIMA TFM Beckman 785-1 mkb3 wima TFM-.1UF-160V bf197 diode zener ph c9v1 2N4286 2N3642 bf197p transistor 2N2359A

    transistor t2a

    Abstract: NPN transistor 2n2222A st 2n 2907a ZTX310 ZDT- 5V BSV27 J 2N2369 ZTX312 DATA ZTX313 DATA BSV23
    Text: SILICON TRANSISTORS Planar Epitaxial High Speed Switching n-p-n Characteristics Maximum Ratings Type No. v CBO VCER Vebo Ptot 25°C smb. fT min. Storajje Time ts (i nax.) at lc mA MHz nS 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 20 150 150 10 200 200


    OCR Scan     		PDF BSY95A ZTX310, BSV23 ZTX311 BSV24 ZTX312, BSV25 ZTX313, BSV26 ZTX314, transistor t2a NPN transistor 2n2222A st 2n 2907a ZTX310 ZDT- 5V BSV27 J 2N2369 ZTX312 DATA ZTX313 DATA

    2N3707 DIODE

    Abstract: 2n4058 BC107 2N2475 2N929 BC107 equivalent Competitive 2N3707 BC108 BCW20
    Text: E-Line Transistors Applications C h a rt SILICON TRANSISTORS 10uA 100mA 1mA 10mA 100mA 1A The wide diversity of applications for which E-Une plastic encapsulated transistors are suitable is shown on the diagram. Additional types designed for more specialized purposes are listed


    OCR Scan     		PDF ZTX330, ZTX331, BCW20 BCW22 2N3707 2N929 ZTX107 ZTX108 ZTX1I09 BC107 2N3707 DIODE 2n4058 2N2475 BC107 equivalent Competitive BC108

    BFY52 equivalent

    Abstract: ic marking z7 marking C1s 2N2222 2N2475 2N2938 f025 2N929 2N2369 equivalent BAW63
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B.S. num ber* Page Type Device


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A BFY52 equivalent ic marking z7 marking C1s 2N2222 2N2475 2N2938 f025 2N2369 equivalent