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    BFT 66 Price and Stock

    Hirose Electric Co Ltd TM18RB-FT-66

    CONN MOD JACK
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    DigiKey TM18RB-FT-66 Cut Tape 1
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    TM18RB-FT-66 Reel 250
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    Mouser Electronics TM18RB-FT-66 200
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    United Chemi-Con Inc KTJ101B106M55BFT00

    Specialty Ceramic Capacitors 100VDC 10uF Tol 20% 6x5.3x5.5mm Double Stack AEC-Q200
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    Mouser Electronics KTJ101B106M55BFT00 3,840
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    KOA Speer Electronics Inc CZB2BFTTE600P

    Ferrite Beads 1206 60ohm 25%
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    Mouser Electronics CZB2BFTTE600P 2,982
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    United Chemi-Con Inc KTJ251B225M55BFT00

    Specialty Ceramic Capacitors 250VDC 2.2uF Tol 20% 6x5.3x6.5mm Double Stack AEC-Q200
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    Mouser Electronics KTJ251B225M55BFT00 2,740
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    KOA Speer Electronics Inc CZB2BFTTE301P

    Ferrite Beads 1206 300ohm 25%
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    Mouser Electronics CZB2BFTTE301P 2,558
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    BFT 66 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFT66 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFT66 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BFT66 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BFT66 Siemens EXTREMELY LOW NOISE NPN SILICON BROADBAND TRANSISTORS Scan PDF
    BFT66 Siemens Semiconductor Data Book (German) 1976/77 Scan PDF
    BFT66S Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFT66SE Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    BFT 66 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    zo 103 ma

    Abstract: BFT66 BFt 65 BFT 24 045912E Q62702-F456 RI-60 Q62702-F457 BFt 66 BFT67
    Text: BFT 66 BFT 67 Extrem rauscharm e N P N -S iliziu m -B re itb a n d tra n s is to re n BFT 66 und BFT 67 sind epitaktische NPN-Silizium-Planar-UHF-Transistoren im Gehäuse 18 A4 DIN 41 876 T O -7 2 für Vorstufenanwendungen in extrem rauscharmen Breitband­


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    Q62702-F456 Q62702-F457 103MHz 102mA zo 103 ma BFT66 BFt 65 BFT 24 045912E Q62702-F456 RI-60 Q62702-F457 BFt 66 BFT67 PDF

    ft66

    Abstract: BFT66
    Text: ZSC D • fl23SbüS ÜGGM7Qä 1 « S I E G Extremely Low Noise NPN Silicon Broadband Transistors , Kr n/. 8 D ~ T -it'/r BFT 66 BFT 67 SIEMENS AKTIENGESELLSCHAF BFT 66 and BFT 67 are epitaxial NPN silicon planar RF transistors in TO 7 2 case 18 A 4 DIN 4 1 8 7 6 , intended for input stage applications in extremely low-noise broadband


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    fl23Sb aa35b05 0QQH715 ft66 BFT66 PDF

    BFT65

    Abstract: transistor bft65 f451 61 SIEMENS 25813
    Text: SIEMENS BFT 65 NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 10 mA to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFT 65 Marking BFT 65 Pin Configuration


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    BFT65 BFT65 Q62702-F451 fl235bDS transistor bft65 f451 61 SIEMENS 25813 PDF

    TC51V16325B

    Abstract: MJ-13
    Text: TOSHIBA TC51V16325BJ/BFT-70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description The TC51V16325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC51V16325BJ/BFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to pro­


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    TC51V16325BJ/BFT-70 TC51V16325BJ/BFT TC51V16325BJ/ 400mil) I/024 I/025 I/032 TC51V16325B MJ-13 PDF

    TC5118325B

    Abstract: mx c511 tc5118325
    Text: TOSHIBA TC5118325BJ/BFT-70 PRELIMINARY 524,288 W ORD X 32 BIT EDO DYNAMIC RAM Description The TC5118325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC5118325BJ/ BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


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    TC5118325BJ/BFT-70 TC5118325BJ/BFT TC5118325BJ/ 400mil) J/BFT-70 DR16220995 TC5118325B mx c511 tc5118325 PDF

    BE423

    Abstract: No abstract text available
    Text: TOSHIBA TC5118325BJ/BFT-70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description The TC5118325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC5118325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to pro­


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    TC5118325BJ/BFT-70 TC5118325BJ/BFT TC5118325BJ/ 400mil) I/024 I/025 I/032 BE423 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5118320B J/BFT-60/70 PRELIMINARY 524,288 WORD X 32 BIT DYNAMIC RAM Description The TC5118320BJ/BFT is the new generation dynamic RAM organized 524,288 words by 18 bits. The TC5118320BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both


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    TC5118320B J/BFT-60/70 TC5118320BJ/BFT 400mil) DR16210994 D027714 TC5118320BJ/BFT-60/70 PDF

    Untitled

    Abstract: No abstract text available
    Text: • ^0^7 246 002Ô431 *îOÔ ■ - TC51V18325BJ/BFT-60/70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM 16M DRAM Description TheTC51V18325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 w ords by 32 bits. The TC51V18325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to


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    TC51V18325BJ/BFT-60/70 TheTC51V18325BJ/BFT TC51V18325BJ/BFT 400mii) 400mil) tem01 PDF

    Untitled

    Abstract: No abstract text available
    Text: - 1 ! 2SC » • 023SbOS 0004701 I H S I E 6 u‘ NPN Silicon RF Broadband Transistor SIEMENS AKTIENfiESELLSCHAF . D T~3/~13 BFT 12 —1 BFT 12 is an epitaxial NPN silicon planar RF transistor in a plastic package similar to


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    023SbOS Q62702-F390 PDF

    TC51V18325BJ

    Abstract: No abstract text available
    Text: TOSHIBA TC51V18325BJ/BFIW70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description The TC51V18325BJ/BFT' is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC51V18325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to


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    TC51V18325BJ/BFIW70 TC51V18325BJ/BFT' TC51V18325BJ/BFT 400mil) DR16230995 I/024 I/025 I/032 TC51V18325BJ PDF

    2f5 transistor

    Abstract: Transistor BFT 99 TIC 122 Transistor 2SC 2090 Transistor BFT 44 U/25/20/TN26/15/850/BFT75
    Text: a s c ì> • a23SbOS 0004?13 S » S I E G T - ti- n BFT 75 NPN Silicon RF Broadband Transistor - SIEMENS AKTIEN6ESELLSCHAF - BFT 75 is an epitaxial NPN silicon planar transistor in TO 23 6 plastic package 23 A 3 DIN 41869 , intended fo r use in low-noise input and intermediate stages in RF


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    a23SbOS 2f5 transistor Transistor BFT 99 TIC 122 Transistor 2SC 2090 Transistor BFT 44 U/25/20/TN26/15/850/BFT75 PDF

    Untitled

    Abstract: No abstract text available
    Text: TC5332410BF/BFT TOSHIBA TOSHIBA MOS INTEGRATED CIRCUIT 32 MBIT 1 M WORD BY 32 BITS/2 SILICON GATE CMOS WORD BY 16 BITS CMOS MASK ROM DESCRIPTION The TC5332410BF/BFT is a 33,554,432-bit Read Only Memory organized as 1,048,576 words by 32 bits when DW/W is logical high, and as 2,097,152 words by 16 bits when DW/W is logical low.


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    TC5332410BF/BFT TC5332410BF/BFT 432-bit 70-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TC5332410BF/BFT TOSHIBA MOS INTEGRATED CIRCUIT SILICON GATE CMOS 32 MBIT 1 M W O RD BY 32 BITS/2 M W O RD BY 16 BITS CMOS MASK ROM DESCRIPTION The TC5332410BF/BFT is a 33,554,432-bit Read Only Memory organized as 1,048,576 words by 32 bits when DW/W is logical high, and as 2,097,152 words by 16 bits when DW/W is logical low.


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    TC5332410BF/BFT TC5332410BF/BFT 432-bit 70-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: SN54LS671, SN54LS672, SN74LS671, SN74LS672 4-BIT UNIVERSAL SHIFT REGISTERSILATCHES WITH 3-STATE OUTPUTS D2638, JANUARY 1981 - REVISED MARCH 1988 4-Bft Universal Shift Registers/Latches SN54LS671, 8N64LS672 . . . J PACKAGE SN74LS671, SN74LS672 . . . DW OR N PACKAGE


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    SN54LS671, SN54LS672, SN74LS671, SN74LS672 D2638, TLS671) CLS672) LS671 LS672 LS194A) PDF

    cdi wiring diagram

    Abstract: BFT003 ELMOS E100 PHOTODIODE ALARM CIRCUIT ELMOS and logic gate DOTR
    Text: SPF BFT 003 03 Optical Bidirectional Transceiver for byteflight Data Sheet Short description of complete functional unit Features The device consists of a LED mounted on a large area photodiode for bidirectional optical transmission in half duplex mode. LED and photodiode are driven by the multifunction IC E100.34C2 from ELMOS.


    Original
    AV01-0740EN cdi wiring diagram BFT003 ELMOS E100 PHOTODIODE ALARM CIRCUIT ELMOS and logic gate DOTR PDF

    Untitled

    Abstract: No abstract text available
    Text: TC59LM814/06/02 BFT-22,-24,-30 TOSHIBA TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,1 9 4,3 0 4 -W O R D SX 4 BA N K SX 1 6-BITS DOUBLE DATA RATE FAST CYCLE R AM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM 16,777,216-WORDSX4BANKSX4-BITS DOUBLE DATA RATE FAST CYCLE RAM


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    TC59LM814/06/02 BFT-22 608-WORDSX4BANKSX8-BITS 216-WORDSX4BANKSX4-BITS TC59LM814/06/02BPT TC59LM814BFT 304-wordsX TC59LM806BFT TC59LM802BFT TC59LM814/06/02BFT PDF

    BFt 65

    Abstract: BFT65 UHF TRANSISTOR bft65 Q62702-F451 fll500
    Text: BFT 65 Rauscharm er N P N -U H F -T ra n s is to r B FT 6 5 ist ein ep itak tisc h er N P N -S iliz iu m -P la n a r-U H F -T ra n s is to r im K un ststoffgehäu se 5 0 B 3, D IN 41 8 6 7 T 0 - 5 0 ä h n l. zur V e rw e n d u n g in H F -V e rstärkern bis in den G H z -B e re ic h ,


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    BFT65 T0-50 Q62702-F-451 200MHz BFt 65 UHF TRANSISTOR bft65 Q62702-F451 fll500 PDF

    RCA 431 transistor

    Abstract: 2N3442 RCA RCA 2N3055 transistor 2N3055 RCA 2n3773 rca RCA 40852 rca 2n3055 transistor RCA 41013 transistor BF 257 2N5416 RCA
    Text: APPLICATION INFORMATION. . . Power Types [N-P-N & P-N-P] for Inverter/Switching Regulator Service Frequency Range 60 Hz to 50 kHz Peak Voltage Required Up to 0.2 A 0.2 to 1 A 10 to 60V 2N3053 2N4037 2N5321 2N5323 2N6179 2N6181 60 to 150V 2N1486 2N2102 2N4036


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    2N3053 2N4037 2N5321 2N5323 2N6179 2N6181 2N3054 2N5497A 2N3055 2N3772 RCA 431 transistor 2N3442 RCA RCA 2N3055 transistor 2N3055 RCA 2n3773 rca RCA 40852 rca 2n3055 transistor RCA 41013 transistor BF 257 2N5416 RCA PDF

    BFP29

    Abstract: BFP35A BFQ77 BFP17 BFQ57 BFQ58 BFT65 BFQ 58 SOT-89 smd marking CF BFT99A
    Text: SIEMENS AKTIENGESELLSCHAF 03E I Bi ê23SbO S QDlSb7M T M S IE G • : Silicon Bipolar Transistors M etal C eram ic Packages Max. r atings ^CEO Ic Pto. V mA mW Chara steristic:s at Ta = 25° C F fj f Ic VcE GHz dB mA V GHz N N N 16 16 20 35 30 35 450 450 700


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    fi23SbQS 001Sb74 O-117 BFT98B BFT99A BFR15A, BFS55A, BFP29 BFP35A BFQ77 BFP17 BFQ57 BFQ58 BFT65 BFQ 58 SOT-89 smd marking CF PDF

    cf8h

    Abstract: pci0646u
    Text: MAN-00646U-000 Rev. 0.9 April 21, 1997 PCI0646U Bus Master Ultra DMA PCI-IDE Chip Specification CMD Technology, Inc. 1 Vanderbilt Irvine, California 92618 714 454-0800 Revision History Revision Date Comments 0.8 0.9 3/3/97 4/22/97 First internal release


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    MAN-00646U-000 PCI0646U PCI0646U MAN-00646U-000 33MHz cf8h PDF

    RCA TO-5

    Abstract: 2N2016 2N3055 2n3772 2N6474 JAN 2N5781 2N5415 2N6107 2N6248 2N6372
    Text: EPITAXIAL-BASE N-P-N & P-N-P POWER TYPES 1C t o 15 A . . . P f t o 2 0 0 W . . . V C E t o 125 V 1« “ -3.5 max. Py«10W m ax . ITO-3SI I{ > 8 A max. P y * 40 W max. TO-66 * lc * - 6 A max. P y - 40 W max. 1TO-66)* le « 7 A max. P y - 40 W max. V E R S A W ATT


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    IT039I O-2201 lc-15 ITO-31 O-2201 90x90 RCA TO-5 2N2016 2N3055 2n3772 2N6474 JAN 2N5781 2N5415 2N6107 2N6248 2N6372 PDF

    2N3440 2N5416 REPLACEMENT

    Abstract: 2N5294 replacement 2N5296 RCA 2N6108 RCA 2N5954 2N5416 REPLACEMENT 2N3772 RCA RCA 40250 2N5781 2N6107
    Text: EPITAXIAL-BASE N-P-N & P-N-P POWER TYPES 1C to 15 A . . . P f to 2 0 0 W . . . V C E to 1 2 5 V 1« “ - 3 .5 max. Py«10W m ax. ITO-3SI I{ > 8 A max. P y * 40 W max. TO-66 * lc * - 6 A max. P y - 40 W max. 1TO-66)* le « 7 A max. Py - 40 W max. V E R S A W ATT


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    IT039I O-2201 lc-15 ITO-31 O-2201 90x90 2N3440 2N5416 REPLACEMENT 2N5294 replacement 2N5296 RCA 2N6108 RCA 2N5954 2N5416 REPLACEMENT 2N3772 RCA RCA 40250 2N5781 2N6107 PDF

    rca 40410

    Abstract: rca 40362 transistor 40410 RCA transistor 40410 RCA transistor 40406 40410 RCA 40319 40362 RCA 2N5295 2N5296 RCA
    Text: HIGH-VOLTAGE N-P-N & P-N-P POWER T Y PE S 1C to 30 A . . •c pm k - 12 A lc = 10A Py =7 5 •100W Switching Linear 130 x 130 130 x 130 1 3 0 x 130 BU106 2N5840 [N-P-N] 2N 52 40 [N-P-N] BU106 2N5838 Va o sus =l40V VCER(sus) =275 V hFE = 20min. hFE.:8 ;" 0) /


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    lc-30A 130x130 180x180 210x210 bu106 2n5840 2n5240 2N6510 2N6308 2n5805 rca 40410 rca 40362 transistor 40410 RCA transistor 40410 RCA transistor 40406 40410 RCA 40319 40362 RCA 2N5295 2N5296 RCA PDF

    RCA 40250 transistor

    Abstract: audio amplifier with rca 410 Transistor rca 40250 RCA 40622 transistor RCA H 410 2n3772 complement RCA 40250 2n3441 complement RCA 2N3055 transistor 40629 Transistor
    Text: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . f r to 20 M Hz . . . Py to 175 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N] 2N5415


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    TQ-66Ã 42x42 130x130 2N6177 2N3439 2N5415 2N358S 2N6213 2N6079 RCA 40250 transistor audio amplifier with rca 410 Transistor rca 40250 RCA 40622 transistor RCA H 410 2n3772 complement RCA 40250 2n3441 complement RCA 2N3055 transistor 40629 Transistor PDF