gal16v8d programming algorithm
Abstract: gal programming algorithm vantis jtag schematic 1 of 8 selector 96 L 2 GAL16V8D LATTICE 3000 SERIES cpld PALCE610H-XX ISPGDX160A GAL22V10D
Text: Lattice and Vantis Product Selector Guide February 2000 Universe of Programmable Solutions Introduction Lattice and Vantis 3.3V and 2.5V ISP CPLD Families Lattice and Vantis. The companies that gave the world ISP and took you Beyond Performance now bring you their combined
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ISPpPAC10
28-pin
ispPAC20-01JI
ispPAC20
44-pin
PAC-SYSTEM10
ispPAC10
PAC-SYSTEM20
gal16v8d programming algorithm
gal programming algorithm
vantis jtag schematic
1 of 8 selector
96 L 2
GAL16V8D
LATTICE 3000 SERIES cpld
PALCE610H-XX
ISPGDX160A
GAL22V10D
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varistor svc 561 14
Abstract: Z5U 103M 1KV samwha capacitor part numbers SVC 561 14 varistor 472m varistor svc 471 14 SVC 561 10 Varistor sck 055 varistor 332m varistor SVC 561
Text: Contents_ Company History 2 Multi Layer Ceramic Capacitors SMD Type 5 SMD Type-High Voltage 13 Automotive Application 26 Radial & Axial 38 Chip Beads & Inductors Chip Ferrite Beads 46 Chip Ferrite Beads Arrays 65 Chip Ferrite Inductors 68 Chip Power Inductors
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revoluti90
varistor svc 561 14
Z5U 103M 1KV
samwha capacitor part numbers
SVC 561 14
varistor 472m
varistor svc 471 14
SVC 561 10
Varistor sck 055
varistor 332m
varistor SVC 561
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LDR 03
Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Text: Halbleiter bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren
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bly 2 10
Abstract: BLW11 blx66 BFY90 uhf vhf amplifier bly62 transistor zg BLY53A BLY78 BFy 90 transistor
Text: BFY90 NPN EPITAXIAL PLANAR SILICON TRANSISTOR . . _ 769 FOR LOW NOISE U H F/VH F A M P L IFIE R AND O SC ILLA TO R APPLICA TIO N S • • • • Guaranteed Guaranteed Guaranteed Guaranteed Low Noise Figure —5 dB Maximum at 500 MHz Gain Bandwidth Product — 1*5 GHz
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BFY90
O-117
T0-60CE
S0-104
SO-104
bly 2 10
BLW11
blx66
BFY90
uhf vhf amplifier
bly62
transistor zg
BLY53A
BLY78
BFy 90 transistor
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MA3232
Abstract: BF123 CA3036 FT4017 2n1613 replacement A431 BF121 BVEBO-15V DIODE SJ 98 DM01B
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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BVCBO-100V
BVCE0-80V
BVEBO-15V
BVCBO-60V
BVCEO-40V
BVCB0-80V
BVCE0-60V
BVCB0-100V
MA3232
BF123
CA3036
FT4017
2n1613 replacement
A431
BF121
DIODE SJ 98
DM01B
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HBF4727A
Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
Text: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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transistor A431
Abstract: CA3036 a106 transistor A431 transistor d16P4 4JD12X009 A431 BFR14 MA3232 GI3793
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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BVCB0-80V
BVCE0-60V
BVEBO-15V
BVCBO-100V
BVCEO-80V
BVEB0-15V
BVCB0-60V
BVCE0-40V
MHM2101
transistor A431
CA3036
a106 transistor
A431 transistor
d16P4
4JD12X009
A431
BFR14
MA3232
GI3793
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SC1674
Abstract: bf 194B BF195D 195D 2N3866 2N917 2N918 SC1730 case to-106
Text: TELEVISION/VIDEO DEVICES / SEMICONDUCTORS a I.F./R.F. amplifiers and oscillators NPN PNP . Maximum Ratings TYPE Case: SOT-25 Case: To.92 Case:To.106 P d = 250 mW PD=200mW P d = 150 mW @Tac»25*C y /B F i j ^BF BF /B F @ Ta-26*C 194A 194B 195C 195D NPN PNP
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OT-25
Ta-26
O-105
O-106
O-220
100TP.
02U551
SC1674
bf 194B
BF195D
195D
2N3866
2N917
2N918
SC1730
case to-106
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ma7805
Abstract: BFR14 AT344 GI3793 GME3001 PET3001 T018 2N3082 BSV56 Ro-270
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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Voff-200uV.
NS8000
NS8003
OC740
Pt-500mW;
BVCBO-12V;
50-1500KC.
Voff-100uV;
0-50KC.
ma7805
BFR14
AT344
GI3793
GME3001
PET3001
T018
2N3082
BSV56
Ro-270
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MA7805
Abstract: ME214 OC740
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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Untitled
Abstract: No abstract text available
Text: Gì. SGS-THOMSON SM15T6V8,A/220,A SM15T6V8C,CA/220C,CA \u TRANSILTM FEATURES . PEAK PULSE POWER= 1500 W @ 1ms • BREAKDOWN VOLTAGE RANGE : From 6V8 to 220 V ■ UNI AND BIDIRECTIONAL TYPES ■ LOW CLAMPING FACTOR . FAST RESPONSE TIME ■ UL RECOGNIZED DESCRIPTION
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SM15T6V8
SM15T6V8C
CA/220C
7T2T237
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BFP29
Abstract: BFP35A BFQ77 BFP17 BFQ57 BFQ58 BFT65 BFQ 58 SOT-89 smd marking CF BFT99A
Text: SIEMENS AKTIENGESELLSCHAF 03E I Bi ê23SbO S QDlSb7M T M S IE G • : Silicon Bipolar Transistors M etal C eram ic Packages Max. r atings ^CEO Ic Pto. V mA mW Chara steristic:s at Ta = 25° C F fj f Ic VcE GHz dB mA V GHz N N N 16 16 20 35 30 35 450 450 700
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fi23SbQS
001Sb74
O-117
BFT98B
BFT99A
BFR15A,
BFS55A,
BFP29
BFP35A
BFQ77
BFP17
BFQ57
BFQ58
BFT65
BFQ 58
SOT-89 smd marking CF
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Ultra High Voltage Hexfets
Abstract: dioda rectifier EMBI IRF1010 IRF840LC dioda 12B dioda OA 50 TF 100 FEMA
Text: PD-9.1069 International S Rectifier IRF840LC HEXFET* Power MOSFET • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced Ciss> Coss. Crss Extremely High Frequency Operation Repetitive Avalanche Rated Vdss= 500V
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IRF840LC
71321S.
B172-OTM1
963C6
Ultra High Voltage Hexfets
dioda rectifier
EMBI
IRF1010
IRF840LC
dioda 12B
dioda OA 50
TF 100 FEMA
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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z0800206
Abstract: Z0800106 Z0800110 Z08002 Z0800 Z0800204CMB zilog z8001 1065D Z08002-06CMB TDA 2025
Text: ZIL06 INC 17E D • ^ 3 4 0 4 3 0013b77 T Z8001 / Z 80023 Military Z8000® CPU Central Processing Unit 17 '! - ^ Military Electrical Specification o -7 September 1988 FEATURES ■ Regular, easy-to-use architecture ■ Instruction set more powerful than many minicomputers
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ZIL06
0013b77
Z8001®
Z8000®
32-bit
Z8010TM
Z8002
40-pin
44-pln
z0800206
Z0800106
Z0800110
Z08002
Z0800
Z0800204CMB
zilog z8001
1065D
Z08002-06CMB
TDA 2025
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7002S
Abstract: IP2K P0603B 48S67 C25 02D
Text: 10 11 12 MTG1 1 0_N _R D 3 0X 12 M T C l10_N _BD 3 0X 12 MTG1 10_N_RD3 0 X 1 2 “ MTCl 1 0 _ 1 J _ P .D 1 0 X 1 ; M TCl 1 0_N_RD30X12 FDS02 F D _DOTO4 O FD503 FD_DO"IO 4 C F ttSO l F0_D O T040 FD504 FD _r>O T040 FD_DOTO 4 0 F D _ D O ' ‘0 4 D FD_DOT0 4 0
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RD30X12
FDS02
FD503
FD504
DOT040
0B05C
7002S
IP2K
P0603B
48S67
C25 02D
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3TE445
Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group
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FJJ141/A
2305D
FJJ181/A
2305E/848
FJJ191/A
FJL101/A
CD2306D
FJY101/A
2306E/832
CD2307/944
3TE445
2N3303
ECC88
TAA*310
B9D TRANSISTOR
BYY32
GEX36/7
Ferranti zs70
6ej7
3n159
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OT239
Abstract: BT100a 02 CQX82A TRIO TA 80W CV7351 ZP1481 CV2154 ZP1430 triac mw 151 500r PL5727
Text: Milliard quick reference guide 1978/79 — discrete semiconductors — passive components — valves and tubes This guide gives quick reference data on Mullard electronic components. The information is deliberately abbreviated to give a rapid appreciation of salient characteristics, and to
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Z8000
Abstract: No abstract text available
Text: P ro d u c t S p e c ific a tio n <£SL G E 1 Z8001 / Z8002® Z8000®CPU C entral Processing Unit October 1988 FEATURES Regular, easy-to-use architecture Instruction set m ore powerful than many m inicom puters R esource-shaping systems capabilities for
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Z8001Â
Z8002Â
Z8000Â
32-bit
Z8010
0D30fl3B
Z8000
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IAO5 Sharp
Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
Text: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The
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Q60103-
thS10
to3530
to4600
to4600
IAO5 Sharp
free transistor equivalent book 2sc
siemens transistor asy 27
Diode BAY 61
TRANSISTOR BJ 131-6
tesla typ 202 thyristor
Tesla
z1072
HALL EFFECT 21E
z1071
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cqx 87
Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157
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AA113
AA117
AA119
BAV17
BAV18
BAV19
BAV20
BAV21
cqx 87
germanium
AEG Thyristor T 558 F
TDA 2516
bu208
bf506
la 4430
BF963
TDA1086
transistor bf 175
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lc7866
Abstract: No abstract text available
Text: DVD Front End 1C LC78661W Specifications [Preliminary] Functional Description SANYO Electric Co., Ltd. Semiconductor Company System Business Division, Digital A udio Business Unit DVD Front End 1C Preliminary Specifications Contents page 1. Overview . 1
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LC78661W
106Dh)
l06Eh)
106Eh)
lc7866
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