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    BFW 61 Search Results

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    BFW 61 Price and Stock

    Carling Technologies ROCKER VV-A OR BFW00

    Rocker Switches ROCKER VV-A OR BFW00
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    Mouser Electronics ROCKER VV-A OR BFW00
    • 1 $4.3
    • 10 $3.65
    • 100 $3.25
    • 1000 $2.73
    • 10000 $2.69
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    Vishay Intertechnologies CDR32BP161BFWRAJ

    Multilayer Ceramic Capacitors MLCC - SMD/SMT
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    Vishay Intertechnologies CDR32BP361BFWRAJ

    Multilayer Ceramic Capacitors MLCC - SMD/SMT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CDR32BP361BFWRAJ
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    Vishay Intertechnologies CDR32BP561BFWRAJ

    Multilayer Ceramic Capacitors MLCC - SMD/SMT
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    Mouser Electronics CDR32BP561BFWRAJ
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    BFW 61 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFW61 Philips Semiconductors N-channel Silicon FET Original PDF
    BFW61 Mullard Quick Reference Guide 1977/78 Scan PDF
    BFW61 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BFW61 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFW61 Unknown Shortform Electronic Component Datasheets Short Form PDF
    BFW61 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BFW61 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BFW61 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BFW61 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BFW61 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    BFW61 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BFW61 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BFW61 National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF
    BFW61 Texas Instruments Discrete Devices 1978 Scan PDF

    BFW 61 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    din 3141

    Abstract: BFW92A transistor bfw 88 bfw 92 bfw 96
    Text: BFW 92 A TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Wide band RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 1 BFW92A Marking Plastic case XTO 50 1= Collector; 2= Base; 3= Emitter Absolute Maximum Ratings


    Original     		PDF BFW92A D-74025 din 3141 transistor bfw 88 bfw 92 bfw 96

    BFR 965

    Abstract: mpsa 46 BAW 62 SOT23 4148 SOD-123 bc 544 BRF91A smd bf MPS 808 BC 241 BFS 505 SMD
    Text: Cross Reference Conventional Devices to SMD Conventional Devices SMDPackages Conventional Devices SOD-123 SMDPackage Conventional Devices SOT-23 (cont’d) SMDPackage SOT-23 (cont’d) BA 282 BA 582 BB 304 BB 804 MPSA 05 SMBTA 05 BA 389 BA 585 BC 337 BC 817


    Original     		PDF OD-123 OT-23 OT-143 OT-89 BFR 965 mpsa 46 BAW 62 SOT23 4148 SOD-123 bc 544 BRF91A smd bf MPS 808 BC 241 BFS 505 SMD

    Untitled

    Abstract: No abstract text available
    Text: B, T www.vishay.com Vishay Dale Carbon Film Resistors, General Purpose, High Voltage FEATURES • Ratings to 10 W, 40 kV • Available with either radial lugs or axial leads • Epoxy/enamel coated, with additional Mylar Available heat shrink sleeve 0.002" 0.051 mm thick


    Original     		PDF 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    bfw 106 c

    Abstract: BFW16 Q62702-F319 transistor BFW 10 bfw16a
    Text: E5C D fi235bQ5 Q0047ES 1 H S I E G • NPN Silicon RF Broadband Transistor BFW 16 A SIEMENS AKTIENGESELLSCHAF ^^-'31-2.3 BFW 16 A is an epitaxial NPN silicon planar RF transistor in TO 39 metal case 5 C 3 DIN 41 87 3 intended for general applications up to the GHz range, e.g. for


    OCR Scan     		PDF fi235bQ5 Q0047ES Q62702-F319 23SbOS 00Q4727 BFW16 bfw 106 c Q62702-F319 transistor BFW 10 bfw16a

    TRANSISTOR b 772 p

    Abstract: bfw 16 transistor BFW 72 TRANSISTOR BFW 16
    Text: E5C D • fi235bQS 0004725 1 H S I E 6 NPN Silicon RF Broadband Transistor BFW 16 A SIEMENS AKTIENGESELLSCHAF BFW 16 A is an epitaxial NPN silicon planar RF transistor In TO 39 metal case 5 C 3 DIN 41873 intended for general applications up to the GHz range, e.g. for


    OCR Scan     		PDF fi235bQS Q62702-F319 C--12 23SbQS Q0QM727 BFW16A TRANSISTOR b 772 p bfw 16 transistor BFW 72 TRANSISTOR BFW 16

    SO-104

    Abstract: BLW11 blw 30 or bfw 30 BLW21 BLY 67 BLY-38 BLY34 bly 55 bly 63 BLY87
    Text: VHF-, UHF-ANWENDUNGEN VHF-, UHF APPLICATIONS 3 - 12 Typ type f MHz BFW 16 BFW 17 BFX 89 BFY 90 CATV CATV CATV CATV BLW11 BLW 12 BLW 13 BLW 14 CATV 470 470 470 13 13 13 0,1 0,75 2 0,66 3,75 7 BLW BLW BLW BLW 16 17 18 19 175 175 175 175 13 13 13 13 0,1 0,1 0,5


    OCR Scan     		PDF BLW11 O-131 O-129 O-117 SO-104 blw 30 or bfw 30 BLW21 BLY 67 BLY-38 BLY34 bly 55 bly 63 BLY87

    transistor bfw 88

    Abstract: TRANSISTOR BFW 11 f320 2X06 BFW30 Q62702-F320 siemens 230 97 o Transistor C G 774 6-1 BFW 61
    Text: ESC D • ûS35bOS Q0Q47SÔ 7 * S I E G ^ NPN Silicon RF Broadband Transistor BFW 30 Not for new design SIEMENS AK TIE NGE SEL LS CH AF BFW 30 is an epitaxial NPN silicon planar RF transistor in a TO 7 2 case 18 A 4 DIN 41876 , designed for universal application up to the GHz range, e. g. for vertical amplifiers


    OCR Scan     		PDF 53SbOS Q0Q47SÃ Q62702-F320 transistor bfw 88 TRANSISTOR BFW 11 f320 2X06 BFW30 Q62702-F320 siemens 230 97 o Transistor C G 774 6-1 BFW 61

    Untitled

    Abstract: No abstract text available
    Text: ESC D • ûS35bOS Q0Q47SÔ 7 * S I E G ^ NPN Silicon RF Broadband Transistor BFW 30 Not for new design SIEMENS AK TIEN GE SE LL SC HA F BFW 30 is an epitaxial NPN silicon planar RF transistor in a TO 72 case 18 A 4 DIN 41876 , designed for universal application up to the GHz range, e. g. for vertical amplifiers


    OCR Scan     		PDF S35bOS Q0Q47SÔ Q62702-F320

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors H bb53T31 0D32142 T34 M A P X _Product specification NPN 3 GHz w ideband transistor ^ BFW 92A N AllER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING NPN transistor in a plastic SOT37 envelope. It is primarily intended for use in amplifiers in the 40 to 860 MHz


    OCR Scan     		PDF bb53T31 0D32142 BFW92A/02 BFW92A BFW92

    SV1AC material

    Abstract: imi 6050 SN05N BFS3565 T314 P4V1 SN20 SN-20
    Text: IMI Seal file rs FatefMerf Features • Simple to handle and inexpensive in price. • Available in various configurations to conform to the wiring materials in use and the characteristics as required. • Absorbs noise effectively because of the impedance over 30 Q in high frequency band


    OCR Scan     		PDF 1000MHz) SV1AC material imi 6050 SN05N BFS3565 T314 P4V1 SN20 SN-20

    59VIII

    Abstract: 79VIII BCY 62 59IX BCY 68 79-IX BCY57 BCY58VII BCY58VIII T018
    Text: BHARAT ELEK/SEfllCOND DI 47E D • 14353^0 □□□□013 72? ■ B E L l T '"Zf'OÍ VCE Si Device No VCEO VCBO Volts mm Volts mm V ebo Vofts mm hFE at bias min /max Ic mA VCE Volts 1CM mA max Ptol mW max ICBO <A typ (Sat Volts typ fT MHz typ Cob pF typ


    OCR Scan     		PDF BCY57 BCY58VII BCY58VIII 59VIII 100min. 78VII 78VIII 79VII 79VIII BFW10 59VIII 79VIII BCY 62 59IX BCY 68 79-IX BCY58VIII T018

    ph 4148

    Abstract: f494 ph+4148+zener+diode PXTA14 BC546 SMD SMD BC547 BC327/BC517 BC327-40 SMD BST74 BFG 71
    Text: Philips Semiconductors Surface Mounted Semiconductors Conversion List CONVERSION LIST FROM LEADED TO SMD TYPE LEADED SMD LEADED SMD B A 2 43 BA T18 BA W 62 BAW 56 B A 3 14 B A S 17 BA W 62 BAW 56W B A 4 80 BA T17 B A X 12 BAS29 BA481 BA T17 B A X 12 BA S31


    OCR Scan     		PDF BAS29 BA481 BBY31 BAT81 BAS81 BBY40 BC847 BAT54 BC847A BT2907 ph 4148 f494 ph+4148+zener+diode PXTA14 BC546 SMD SMD BC547 BC327/BC517 BC327-40 SMD BST74 BFG 71

    BLY78

    Abstract: BLY87 bly91 BLY93A TRANSISTOR BFW 11 Transistor BFX 90 BLY34 BLW12 BLY91A BLY53
    Text: BLW12 SILICO N NPN VH F POWER TRANSISTOR HIGH G AIN DRIVER FOR 13 V FM APPLICATIONS • • • • 750 mW at 470 MHz Min, Gain 10 dB Studless Stripline Package Distributed Construction mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 36 V


    OCR Scan     		PDF BLW12 O-117 T0-60CE S0-104 SO-104 BLY78 BLY87 bly91 BLY93A TRANSISTOR BFW 11 Transistor BFX 90 BLY34 BLW12 BLY91A BLY53

    BLW25

    Abstract: bly91 BLY93 BLY78 BLY-38 BLY-53 BLW11 BLw vhf BLY79 BLY88
    Text: BLW25 SIL IC O N NPN VH F POWER T R A N SIST O R High Gain Output for 13 V A M Applications 40 W a t 175 M H z M inim um Gain 7 dB. mechanical specifications absolute maximum ratings Tease = 25 °C Collector-Base V o lt a g e .60 V


    OCR Scan     		PDF BLW25 O-145 toxi175 O-117 T0-60CE S0-104 SO-104 BLW25 bly91 BLY93 BLY78 BLY-38 BLY-53 BLW11 BLw vhf BLY79 BLY88

    BLW24

    Abstract: BLY38 BLY88 bly91 BLY-38 BLX66 bly power transistor TRANSISTOR BFW 16 BLY36 Transistor BFw 92
    Text: BLW24 SILICON NPN VHF POWER TRANSISTOR HIGH POWER OUTPUT STAGE FOR FM/AM APPLICATIONS • • • • 17 W@ 175 MHz 8 dB Gain Distributed Construction I nerdigital Construction mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 60 V


    OCR Scan     		PDF BLW24 O-1175 O-117 T0-60CE S0-104 SO-104 BLW24 BLY38 BLY88 bly91 BLY-38 BLX66 bly power transistor TRANSISTOR BFW 16 BLY36 Transistor BFw 92

    BLW20

    Abstract: TRANSISTOR BFW 16 BLW24 BLW19 BLW11 BLX67 BLY93A bly91 61 TRANSISTOR BLY53A
    Text: BLW20 SIL IC O N NPN V H F POWER T R A N SIST O R 873 HUGH GAIN OUTPUT FOR 13 V FM APPLICATIONS « » » 25 W at 175 MHz Designed to withstand all VSWR at Rated Output Distributed Construction mechanical data absolute maximum ratings Tease93 25 °C Collector-Base V o lta g e . 36 V


    OCR Scan     		PDF BLW20 32-UNC-2A-Thread O-117 T0-60CE S0-104 SO-104 BLW20 TRANSISTOR BFW 16 BLW24 BLW19 BLW11 BLX67 BLY93A bly91 61 TRANSISTOR BLY53A

    BLY93A

    Abstract: BLY78 BLY34 BLY97A BLY-38 BLW11 BLY91 BLW25 BLW19 bly 63
    Text: BLW23 SILICON NPN VH F POWER TRANSISTOR • • • 5 W at 175 MHz, 28 V Minimum Gain 13 dB Designed to Withstand Infinite VSWR at Rated Output mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 55 V


    OCR Scan     		PDF BLW23 8/32-UNC-2A-Thread O-117 O-117 T0-60CE S0-104 SO-104 BLY93A BLY78 BLY34 BLY97A BLY-38 BLW11 BLY91 BLW25 BLW19 bly 63

    2N918

    Abstract: SD1076 PT8811 MRF245 RF Transistor S10-12 PT8828 PT8710 sd-1076 PT9780 transistor pt4544
    Text: 130. 175 MHz class C for FM mobile applications p\ communications mobiles FM, classe C TYPE PACKAGE CONFIG. V cc V .280 4LSL (B) XO-72 SL TO-117 SL .280 4LSL (B) .280 4LSL (B) CE CE CE CE CE 7,5 7,5 7,5 7,5 7,5 2N 4427 SD 1484-10 SD 1127 2N 6080 SD 1574


    OCR Scan     		PDF BAM20 22N6082 BM80-12 SD1416 MM1601 MRF631 SD1144 PT8549 SD1214 N5054 2N918 SD1076 PT8811 MRF245 RF Transistor S10-12 PT8828 PT8710 sd-1076 PT9780 transistor pt4544

    mrf245

    Abstract: SD1416 PT9788 PT8710 2N5642 BLY94 PT8811 BLX66 PT8740 2N4072
    Text: 88. 108 MHz class C for FM tansmitters émetteurs/réémetteurs FM, classe C TYPE SD 1457 SD 1460 PACKAGE CONFIG. Vcc CE CE 28 28 . 500 4LFL . 500 4LFL Pout W (V) > THOMSON-CSF fo (MHz) Pin (W) Gp (dB) (% ) 108 108 7,5 20 > 10 9 75 75 75 160 r!c .380 4L FL


    OCR Scan     		PDF SD2N6082 BM80-12 SD1416 MM1601 MRF631 SD1144 PT8549 SD1214 N5054 2N3553 mrf245 PT9788 PT8710 2N5642 BLY94 PT8811 BLX66 PT8740 2N4072

    blw 30 or bfw 30

    Abstract: TRANSISTOR BFW 11 BLY83 BLY78 bly91 BLY-38 BLW11 blw 93 BLY76 BLY53
    Text: BLW 22 SILICON NPN VHF POWER TRANSISTOR 873 FOR HIGH LEV EL C ATV APPLICATIONS • • • Typical f T 1000 MHz Cross M odulation Typically — 80 dB Inter Modulation Typically — 52 dB mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e .40 V


    OCR Scan     		PDF O-117 O-117 T0-60CE S0-104 SO-104 blw 30 or bfw 30 TRANSISTOR BFW 11 BLY83 BLY78 bly91 BLY-38 BLW11 blw 93 BLY76 BLY53

    2sd 5023

    Abstract: transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945
    Text: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE •c (A) VCEO IV) min 40 35 40 40 40 VCE(SAT) max ■c (A) (VÏ COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1


    OCR Scan     		PDF -26UNF-2A O-48D 2sd 5023 transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945

    2sd 5023

    Abstract: bc 9013 bc 9013 g 2SC 9012 2218A cs9012 BC526 transistor BC 945 BC287 Transistor BC345
    Text: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE ic (A) VCEO IV) min max 40 35 40 40 40 120 VCE(SAT) max (A) (Vï COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1


    OCR Scan     		PDF 13LLSD to-39 2sd 5023 bc 9013 bc 9013 g 2SC 9012 2218A cs9012 BC526 transistor BC 945 BC287 Transistor BC345

    bly 2 10

    Abstract: BLW11 blx66 BFY90 uhf vhf amplifier bly62 transistor zg BLY53A BLY78 BFy 90 transistor
    Text: BFY90 NPN EPITAXIAL PLANAR SILICON TRANSISTOR . . _ 769 FOR LOW NOISE U H F/VH F A M P L IFIE R AND O SC ILLA TO R APPLICA TIO N S • • • • Guaranteed Guaranteed Guaranteed Guaranteed Low Noise Figure —5 dB Maximum at 500 MHz Gain Bandwidth Product — 1*5 GHz


    OCR Scan     		PDF BFY90 O-117 T0-60CE S0-104 SO-104 bly 2 10 BLW11 blx66 BFY90 uhf vhf amplifier bly62 transistor zg BLY53A BLY78 BFy 90 transistor

    BFW 11 oa

    Abstract: bly78 BLW18 BLW11 bly92a bly93a BLY38 bly34 BLY60 BLY53
    Text: BLW18 SILIC O N NPN VH F POWER T R A N S IST O R electrical characteristics at 25 °C case temperature unless otherwise noted PAR AM ETE R V IBR)CER lc = 50 m A , R b e = 1 0 Í2 L V CEO C o lle ctor-E m itte r Breakdown Voltage I q = 50 m A , Iß = o See N ote 1


    OCR Scan     		PDF BLW18 VCB-13V, O-117 T0-60CE S0-104 SO-104 BFW 11 oa bly78 BLW18 BLW11 bly92a bly93a BLY38 bly34 BLY60 BLY53