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    BFX29 TRANSISTOR Search Results

    BFX29 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BFX29 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BFX29 MECHANICAL DATA Dimensions in mm inches PNP SILICON EPITAXIAL TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) APPLICATIONS 6.10 (0.240) 6.60 (0.260) • General Purpose Industrial Applications 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016)


    Original     		PDF BFX29

    bfx29 transistor

    Abstract: BFX29
    Text: BFX29 MECHANICAL DATA Dimensions in mm inches PNP SILICON EPITAXIAL TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) APPLICATIONS 6.10 (0.240) 6.60 (0.260) • General Purpose Industrial Applications 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016)


    Original     		PDF BFX29 600mA bfx29 transistor BFX29

    bfx29 transistor

    Abstract: BFX29
    Text: BFX29 MECHANICAL DATA Dimensions in mm inches PNP SILICON EPITAXIAL TRANSISTOR 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) APPLICATIONS 6.10 (0.240) 6.60 (0.260) • General Purpose Industrial Applications 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016)


    Original     		PDF BFX29 600mA bfx29 transistor BFX29

    bfx29

    Abstract: bfx29 transistor
    Text: SILICON PNP TRANSISTOR BFX29 • Hermetic TO-39 Metal package. • Ideally suited for Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO IC ICM PD TJ Tstg


    Original     		PDF BFX29 600mA 600mW O-205AD) bfx29 bfx29 transistor

    Untitled

    Abstract: No abstract text available
    Text: <££ml-Condu.eioi ZPioduati, fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BFX29 MECHANICAL DATA Dimensions in mm (inches) PNP SILICON EPITAXIAL TRANSISTOR APPLICATIONS • General Purpose Industrial Applications


    Original     		PDF BFX29 600mA 150mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP TRANSISTOR BFX29 • Hermetic TO-39 Metal package. • Ideally suited for Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO IC ICM PD TJ Tstg


    Original     		PDF BFX29 600mA 600mW 34mW/Â O-205AD)

    BFX29

    Abstract: No abstract text available
    Text: BFX29 MECHANICAL DATA Dimensions in mm inches PNP SILICON EPITAXIAL TRANSISTOR 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) 0.41 (0.016)


    Original     		PDF BFX29 150mA BFX29

    BFX29

    Abstract: bfx29 transistor
    Text: BFX29 MECHANICAL DATA Dimensions in mm inches PNP SILICON EPITAXIAL TRANSISTOR 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 )


    Original     		PDF BFX29 150mA 100MHz BFX29 bfx29 transistor

    BFX29

    Abstract: bfx29 transistor 1N916 IEC134 ScansUX894
    Text: BFX29 J V_ SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a TO-39 metal envelope for general industrial applications. QUICK REFERENCE DATA Collector-base voltage open emitter - v CBO max. 60 V Collector-emitter voltage (open base) -V c E O


    OCR Scan     		PDF BFX29 BFX29 bfx29 transistor 1N916 IEC134 ScansUX894

    transistor 2TH

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE t^E D • 1^53=131 0027726 706 BFX29 SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a TO-39 metal envelope for general industrial applications. Q U IC K R E F E R E N C E D A T A Collector-base voltage open emitter Collector-em itter voltage (open base)


    OCR Scan     		PDF BFX29 bb53T31 02773A 7Z22S09 bb53131 7ZZ2917 7Z22916 transistor 2TH

    BFX29

    Abstract: DF 331 TRANSISTOR bfx29 transistor Silicon Epitaxial Planar Transistor philips Transistor 5331 BFX2
    Text: N AMER PHILIPS/DISCRETE m bbSB^l 0G2772Ô 70Û b^E D BFX29 A SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a TO-39 metal envelope for general industrial applications. Q U IC K R E F E R E N C E D A T A - v CB0 max. Collector-emitter voltage open base


    OCR Scan     		PDF 0G2772Ã BFX29 BFX29 DF 331 TRANSISTOR bfx29 transistor Silicon Epitaxial Planar Transistor philips Transistor 5331 BFX2

    T2721

    Abstract: BFX29 CTC 880 transistor d0422 bfx29 transistor IEC134 Silicon Epitaxial Planar Transistor philips 5BE1
    Text: BFX29 T - Z.7 - Z J PHILIPS INTERNATIONAL SbE D • 711005b 0GM2EGb 5Ô7 ■ P H I N SILICON PLANAR EPITAXIAL TRANSISTOR £ PNP transistor in a TO-39 metal envelope for general industrial applications. Q U IC K R E F E R E N C E D A T A Collector-base voltage open emitter


    OCR Scan     		PDF BFX29 T2721 CTC 880 transistor d0422 bfx29 transistor IEC134 Silicon Epitaxial Planar Transistor philips 5BE1

    BFX29

    Abstract: No abstract text available
    Text: BFX29 J \ _ SILICON PLANAR EPITAXIAL TRANSISTOR PNP tran sisto r in a TO -39 m etal package fo r general in d u stria l applications. Q U IC K R E F E R E N C E D A T A Collector-base voltage open e m itte r - v CB0 max. C o lle c to r-e m itte r voltage (open base)


    OCR Scan     		PDF BFX29 200ns BFX29

    BC140 equivalent

    Abstract: 2n3019 equivalent BC107 equivalent transistors bcy59 equivalent equivalent to BC177 BC141 equivalent 2n930 equivalent BC107 pnp equivalent bc109 equivalent BC160 equivalent
    Text: Discrete Devices Transistors Cont. European “Pro Electron” Types Type Near Equivalent Polarity Pkg. Type Near Equivalent Polarity Pkg. BC107 BC107A BC107B BC108 BC108A 2 N 2484 2N930 2N930 2 N 2484 2N930 NPN NPN NPN NPN NPN T O -18 T O -18 T O -18 T O -18


    OCR Scan     		PDF BC107 2N2484 BC107A 2N930 BC107B BC108 BC108A BC140 equivalent 2n3019 equivalent BC107 equivalent transistors bcy59 equivalent equivalent to BC177 BC141 equivalent 2n930 equivalent BC107 pnp equivalent bc109 equivalent BC160 equivalent

    Untitled

    Abstract: No abstract text available
    Text: TO-39 Meta4-Can Package Transistors PNP Electrical C ha ra cte ristics (Ta=25"C, U n le ss O therw ise Specified) Maximum Ratings Type No. CBO (V) Min CEO (V) Min EBO (V) Min Pd (W) (A) (A) *ceo ^CB b s ^C£ (MA) @ (V) (HA) Max 8 (V ) Max Tc=25”c hFE


    OCR Scan     		PDF BC303-6 BC304 BC304-4 BC304-5 BC304-6 BFX29 BFX38 BFX40 BFX41 BFX87

    2n2906

    Abstract: bfx29 transistor 2N2102 2N2218A 2N2219A 2N2904A 2N2905A 2N2906A 2N4036 BFX29
    Text: PNP SWITCHING TABLE 4 - SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector


    OCR Scan     		PDF T0-18 2N4036 2N2102 BFX30 2N2904 2N2218 BSV15 2N2905 2N2219 2N2906 bfx29 transistor 2N2102 2N2218A 2N2219A 2N2904A 2N2905A 2N2906A BFX29

    Untitled

    Abstract: No abstract text available
    Text: SbE D ^ 7 0 5 7 0 Q Q O b ' m Tfifl • Z E T B T -JT I-Q l ■ PNP SWITCHING ZETEX SEMICONDUCTORS TABLE 4 - SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices show n in this table are characterised for medium and high speed switching applications


    OCR Scan     		PDF BSV17 ZT189 2N4036 BFX30 2N2222 2N2218 2N2907 ZT181 ZT182 BCY78

    bc327 smd

    Abstract: bd139 smd 2n2907 smd bc109 smd bc107 smd BC640 smd BC547 smd 2n4401 smd bc558 SMD Bd135 smd
    Text: Philips Sem iconductors Small-signal Transistors Conversion list CONVERSION LIST FROM LEADED TO SMD TYPES LEADED SMD LEADED SMD LEADED SMD BC107 BC847 BC546 BC846 BC107A BC847A BC546A BC846A BC107B BC847B BC546B BC846B BC108 BC848 BC547 BC847 BC108A BC848A


    OCR Scan     		PDF BC107 BC107A BC107B BC108 BC108A BC108B BC108C BC109 BC109B BC109C bc327 smd bd139 smd 2n2907 smd bc109 smd bc107 smd BC640 smd BC547 smd 2n4401 smd bc558 SMD Bd135 smd

    BFX36

    Abstract: 110H BFX81 BFY64 BFY84 BFT53 BFT54 BFT57 BFT58 BFT59
    Text: Ô133107 4ÔE D G0G0451 SEMELABI 33S ISMLB SEMELAB LTD BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rei Code BFTW REQ REQ REQ HE HE HE HR HE HR HR HE HE HR HE HE EEQ REQ REQ HR HR REQ EEQ KEQ CECC HR KEQ EEQ EEQ EEQ EEQ REQ HE HR HK HE


    OCR Scan     		PDF G0G0451 25min 10/30m BFT53 10min BFT54 30min BFT57 BFX36 110H BFX81 BFY64 BFY84 BFT58 BFT59

    ME0412

    Abstract: ME0413 V405A BC153 me0411 BC126 2sc 1091 BC154 bc143 ME0404-2
    Text: M icro - Electronics Sem iconductors PN P Transistors P N P General Purpose Transistors REFERENCE TA B LE o o >> V EBO V min. max. BC153 BC154 40 40 5 5 50 160 _ BCY70 BCY71 BCY72 40 45 25 5 5 5 50 100 50 BFX48 30 5 Code ME0411 ME0412 ME0413 6 6 5 45 45


    OCR Scan     		PDF BC153 19495X BC154 19496H BCY70 19505E BCY71 195MC BCY72 1950SX ME0412 ME0413 V405A me0411 BC126 2sc 1091 bc143 ME0404-2

    BC140 equivalent

    Abstract: 2N2484 equivalent transistors BC141 equivalent bcy59 equivalent bc160 equivalent 2n930 equivalent BC107 equivalent transistors 2n3019 equivalent BC177 equivalent BC107 pnp equivalent
    Text: Discrete Devices Transistors Cont. Low Level Amplifiers Maximum Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts HpE *C Min/Max mA V c E (S a t) @ Ic/lß Volts mA/mA ft MHz Min NF@f Cob pF Max dB


    OCR Scan     		PDF 2N327A 2N327B 2N328A 2N328B 2N329A 2N329B 2N760 2N760A 502N329A BCY56 BC140 equivalent 2N2484 equivalent transistors BC141 equivalent bcy59 equivalent bc160 equivalent 2n930 equivalent BC107 equivalent transistors 2n3019 equivalent BC177 equivalent BC107 pnp equivalent

    2N2219 transistor

    Abstract: BSV16 2N2102 2N2218A 2N2219A 2N2904A 2N2905A 2N2906A 2N4036 BFX29
    Text: PNP SWITCHING TABLE 4 - SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector


    OCR Scan     		PDF T0-18 2N4036 2N2102 BFX30 ZTX310 2N2907A 2N2907 BCY70 BCY71 BCY72 2N2219 transistor BSV16 2N2102 2N2218A 2N2219A 2N2904A 2N2905A 2N2906A BFX29

    bcy59 equivalent

    Abstract: BC140 equivalent 2N3913 BCY95 bc140-10 2n3019 equivalent 2N2708 2N328A BC109C NPN BCY22
    Text: Discrete Devices Transistors Cont. Choppers Maximum Ratings Polarity PD Ambient h f e @>c VCE V e B Volts Volts Min/Max mA II Type Electrical Characteristics @ 25° C V c E (S a t) @ Ic/lß mA/mA — Vq @Ib mV rd@l B Cob Package pF mA Ohms mA - 14 Max 2N943


    OCR Scan     		PDF 2N943 T0-18 2N2004 2N2333 2N2944 2N2945 2N2945A 2N2946 2N2946A 52N329A bcy59 equivalent BC140 equivalent 2N3913 BCY95 bc140-10 2n3019 equivalent 2N2708 2N328A BC109C NPN BCY22

    bc140

    Abstract: 2N2102 2N4036 BC141 BC161 BCY65E BCY77 BSV16 ZT211 ZT89
    Text: PNP LOW LEVEL TABLE 2 - PNP SILICON PLANAR LOW LEVEL TRANSISTORS The devices sh ow n in this table are low level transistors designed for small and medium signal, low and medium power amplification from D C to radio frequencies in Commercial, Industrial and Military


    OCR Scan     		PDF 2N2904 2N2218 BSV15 2N2905 2N2219 2N2906 2N2221 2N2907 2N2222 ZT181 bc140 2N2102 2N4036 BC141 BC161 BCY65E BCY77 BSV16 ZT211 ZT89