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    BFY 40 Search Results

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    BFY 40 Price and Stock

    Amphenol Corporation BFY-1408-03P1D

    Standard Circular Connector Hermetic Standard Circular Connector, Shell Size 8, 3 Positions
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BFY-1408-03P1D 25
    • 1 $47.43
    • 10 $46.77
    • 100 $35.81
    • 1000 $35.81
    • 10000 $35.81
    Buy Now

    Infineon Technologies AG BFY405PZZZA1

    Trans GP BJT NPN 4.5V 0.012A 4-Pin Micro-X (Alt: SP000011413)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    EBV Elektronik BFY405PZZZA1 26 Weeks 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    BFY 40 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFY40 Micro Electronics Semiconductor Device Data Book Scan PDF
    BFY40 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BFY40 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BFY40 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BFY40 Unknown Cross Reference Datasheet Scan PDF
    BFY40 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BFY40 Unknown Transistor Replacements Scan PDF
    BFY40 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BFY40 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BFY40 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BFY40 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFY40 Semico Medium Power Transistors Scan PDF
    BFY405 Infineon Technologies HiRel NPN Silicon RF Transistor Original PDF
    BFY405 (ES) Infineon Technologies HiRel Silicon Bipolar Transistors; Package: CG-uX-4; Package: Micro-X; VCEO (max): 4.5 V; IC(max): 12.0 mA; Ptot (max): 55.0 mW; fT (typ): 22.0 GHz; Original PDF
    BFY405ES Infineon Technologies HiRel NPN Silicon RF Transistor Original PDF
    BFY405H Infineon Technologies HiRel NPN Silicon RF Transistor Original PDF
    BFY405 (P) Infineon Technologies HiRel Silicon Bipolar Transistors; Package: CG-uX-4; Package: Micro-X; VCEO (max): 4.5 V; IC(max): 12.0 mA; Ptot (max): 55.0 mW; fT (typ): 22.0 GHz; Original PDF
    BFY405P Infineon Technologies HiRel NPN Silicon RF Transistor Original PDF
    BFY405S Infineon Technologies HiRel NPN Silicon RF Transistor Original PDF

    BFY 40 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor bfy 68 pin socket

    Abstract: BFY 68 A
    Text: Hirschmann Automation and Control GmbH SunCon BFY Industrial Connectors:SunCon:Sockets and plugs Delivery informations Availability Document created at Product description Description Type Order No. Housing Color Number of contacts Technical data Pin dimensions


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    PDF

    DN65

    Abstract: dbt3 LB830S GB3836 DN40 DN50 BFY 83
    Text: P 普通型 电动浮筒液位变送器 BFY 01 Z 智能型 概述: 概述 BFY-01 系列电动浮筒液位(界面)变送器是国家八﹒五重点科技攻关项目产品,该表是 连续测量液体液位的本质安全型防爆仪表,防爆标志为 iaⅡСΤ(2-5)


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    BFY01 LB830S LB805 24VDC 420mADC 4PN10 0PN16 420mA JB/T822 GB3836--83 DN65 dbt3 LB830S GB3836 DN40 DN50 BFY 83 PDF

    A03 transistor

    Abstract: Q62702F-1610 BFY193 a03 dbm microwave transistor bfy193 24 marking code transistor K 193 transistor
    Text: HiRel NPN Silicon RF Transistor BFY 193 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers up to 2 GHz. ¥ For linear broadband amplifiers ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.3 dB at 2 GHz


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    Q62702F1610 Q62702F1701 BFY193 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552 A03 transistor Q62702F-1610 a03 dbm microwave transistor bfy193 24 marking code transistor K 193 transistor PDF

    EN2997Y1

    Abstract: ESC10YE1
    Text: MIL-DTL-83723, Series III, Pyle I ESC10YE1 SJT EN2997Y1 / YE1 N Contact Stickout N Contact Stickout .281 7.13 38999 BTY/BFY/BNY-14 .109/.079 2.76/2.00 .062/.047 1.57/1.19 A M83723/90Y / M83723/90P II .904 Max. 22.96 Max. PART # III Hermetic Solder Mount/Weld Mount Receptacle,


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    MIL-DTL-83723, ESC10YE1 EN2997Y1 BTY/BFY/BNY-14 M83723/90Y M83723/90P ESC11YE1 ESC10YE1 PDF

    40250

    Abstract: LB801R LB801 iact
    Text: BFY-02 系列电动浮球液位变送器 概述: 概述 BFYBFY-02 系列电动浮球液位变送器是 DDZ-Ⅲ型电动单元组 合仪表中的 一个变送单元。它采用 4~20mADC 标准二线制传输 方式,它具有结构简单调试方便、可靠性好、精度高、体积小


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    BFY-02 BFYBFY-02 420mADC 24VDC JB/T82 2-94DN250 55g/cm3 1Cr18Ni9Ti ZL102 40250 LB801R LB801 iact PDF

    2520P

    Abstract: schottky diode 43t BFY193 5613 CFY 19 CFY 18 micro-x 420
    Text: GaAs Components HiRel Discretes and Microwave Semiconductors 11.4.1 Table 2 HiRel Silicon Diodes General Purpose Silicon Schottky Diodes Tj,max = 150 °C Max. Ratings Component type variant BAS 40-T1 VR IF Characteristics VBR VF Package RF CD Detail Spec. Type Variant


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    40-T1 70-T1 70B-HP HPAC140 2520P schottky diode 43t BFY193 5613 CFY 19 CFY 18 micro-x 420 PDF

    BFY33

    Abstract: BFY34 BFY46 BFY 39 transistor BFY 34 transistor transistor BFY46 BFY 33 transistor N1613
    Text: BFY33, BFY34 2N 1613 ; BFY46 (2N 1711) Not for new developm ent NPN-Transistors for universal RF application BFY 33, BFY 34 and BFY 46 are d o u b le -d iffu se d planar NPN silicon RF-transistors in a case 5 C 3 DIN 41873 (T O -3 9 ). The co lle cto r is electrically connected to the case.


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    BFY33, BFY34 BFY46 Q60206-Y33 Q60206-Y34 Q60206-Y46 BFY34, BFY33 BFY34 BFY46 BFY 39 transistor BFY 34 transistor transistor BFY46 BFY 33 transistor N1613 PDF

    Untitled

    Abstract: No abstract text available
    Text: BFY 50 • BFY 51 • BFY 52 NPN MEDIUM POWER M - SILICON PLANAR EPITAXIAL TRANSISTOR I\/IIC=:F?<= E L _ E C 3T R C 3 I M I C : S M ECHANICAL OUTLINE FEA TU RES APPLICATIONS • Low S a tu ra tio n V o lta g e V c E . a i ) • • • 0 . 5 V t yp @ I A


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    BFY50 BOX69477 924ZS, 309022fâ PDF

    bfy50

    Abstract: FY51
    Text: M O TO R OL A SC X S T R S /R F 12E D I b3b72S4 aGöbMäS B | BFYSO thru BFY52 M A X IM U M RATINGS R atin g S ym b o l BFY BFY BFY . 50 81 52 U n it C ollector-E m itter Voltage VcEO 35 30 20 Vdc C ollector-Base Voltage VCBO 80 60 40 Vdc E m itter-Base Voltage


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    b3b72S4 BFY52 b3b75S4 BFY50 37-rt FY51-52 FY51 PDF

    BFY50

    Abstract: BFY51 BFY50-BFY51 BFY 52 transistor
    Text: BFY 50 BFY 51 BFY 52 SILICON PLANAR NPN M E D IU M -P O W E R A M P L IF IE R S The BFY50, BFY51 and E1FY52 are silicon planar epitaxial NPN transistors in Jedec T O -39 metal case. They are intended fo r general purpose linear and switching applications.


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    BFY50, BFY51 EIFY52 70x1CT6 130x1er6 150mA BFY50 BFY50-BFY51 BFY 52 transistor PDF

    BFY 52 transistor

    Abstract: BFY50 BOX69477 022deg BFY 39 transistor
    Text: BFY 50 • BFY 51 • BFY 52 NPN MEDIUM POWER M - SILICON PLANAR EPITAXIAL TRANSISTOR MICRO EL.ECTRDNIC5 MECHANICAL OUTLINE APPLICATIONS FEA TU R ES • Low Satu ratio n V o lta g e VcE *afc * • •0 .5 V typ @ IA • Audio A m p lifier O u tp u t Stag e


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    IN/11 80Vmin BFY50 i50mA BOX69477 BFY 52 transistor 022deg BFY 39 transistor PDF

    BFY50

    Abstract: BFY 50 55x1 BFY51 BFY52 BFY 39
    Text: BFY 50 BFY 51 SILICON PLANAR NPN BFY 52 MEDIUM-POWER AMPLIFIERS The B F Y 5 0 , B F Y 51 and B F Y 5 2 are silico n planar e p ita x ia l NPN tran sisto rs in Jedec T O -3 9 m etal case. T he y are inte nd e d fo r general purpose linear and sw itc h in g a p p lica tio n s.


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    BFY50, BFY51 BFY52 i30xicr6 BFY50 BFY 50 55x1 BFY 39 PDF

    BFY34

    Abstract: BFY33 BFY46 transistor BFY46 BFY 34 transistor BFY 39 transistor BFY 33 transistor N1613
    Text: BFY33, B FY 3 4 2N 1613 ; B FY46 (2N 1711) Not for new developm ent NPN-Transistors for universal RF application B FY 33, BFY 34 and BFY 46 are double-diffused planar N PN silicon R F-transistors in a case 5 C 3 D IN 41873 (TO-39). The collector is electrically connected to thecase.


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    BFY33, BFY34 BFY46 Q60206-Y33 Q60206-Y34 Q60206-Y46 BFY34, BFY34 BFY33 BFY46 transistor BFY46 BFY 34 transistor BFY 39 transistor BFY 33 transistor N1613 PDF

    BFY56

    Abstract: BFY56A BFY 56A ft bfy BFY 20
    Text: BFY56 BFY56A SILICON PLANAR NPN A M P L IF IE R S A N D SW ITCHES The BFY 56 and BFY 56A are silicon planar epitaxial NPN transistors in Jedec T O -39 metal case. They are designed fo r am plifier and switching applications over a wide range o f voltage and current.


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    BFY56 BFY56 BFY56A 1x10-" BFY56A BFY 56A ft bfy BFY 20 PDF

    BFY88

    Abstract: Telefunken u 237 transistor marking code 2C BFY 88 telefunken C80 ui77 silicon npn planar rf transistor sot 143 IMB 06 C BFY 52 transistor 95288
    Text: TELEFUNKEN ELECTRONIC m ilp y M IM electronic Ö1C D • fi^SOQRb 0005332 b 'T- BFY 88 Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: VHF amplifier stages, pre-stages In common emitter configuration Oscillating mixer stages in common base configuration


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    i200Rb D0DS332 ft-11 569-GS 000s154 hal66 if-11 BFY88 Telefunken u 237 transistor marking code 2C BFY 88 telefunken C80 ui77 silicon npn planar rf transistor sot 143 IMB 06 C BFY 52 transistor 95288 PDF

    BFY 94 transistor

    Abstract: No abstract text available
    Text: SIEM ENS NPN Silicon RF Transistor BFY 90 • For broadband amplifiers up to 1 GHz and non-saturated switches at collector currents from 1 mA to 20 mA. € CECC-type available: GEGC 50002/253. ESD: Electrostatic discharge sensitive device, observe handling precautions!


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    Q62702-F297 235bQ5 0Db74Bl BFY 94 transistor PDF

    TFK 351

    Abstract: BFY88 BFY 88 tfk 352 tfk 349 BFY 20 Mischstufen BFY 36 transistor Scans-0010448 BFy 90 transistor
    Text: /A \ BFY 880 'W Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: UHF-Verstärker-, Vorstufen in Em itterschaltung S elbstschw ingende M ischstufen in Basisschaltung Applications: UHF a m plifier stages, pre stages in com m on e m itter configuration


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    200MHz TFK 351 BFY88 BFY 88 tfk 352 tfk 349 BFY 20 Mischstufen BFY 36 transistor Scans-0010448 BFy 90 transistor PDF

    BFY45

    Abstract: BFY 39 transistor Q60206-Y45 1250-kW transistor BFY45 BFy 90 transistor BFY4
    Text: BFY45 Not for new d e v e lo p m e n t NPN Transistor for lower-pow er switching applications The B F Y 45 is a silicon double-diffused NPN planar transistor in a case 5 C 3 DIN 41873 TO-39 . The collector is electrically connected to the case. The BFY 45 is designed for low power, high voltage switching applications, e.g. for


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    BFY45 BFY45 60206-Y45 BFY 39 transistor Q60206-Y45 1250-kW transistor BFY45 BFy 90 transistor BFY4 PDF

    BFY90

    Abstract: Scans-0010548 BFy 90 transistor
    Text: IMPIM-Transistor fü r A n ten n en verstärker B F Y 90 BFY 90 ist ein epitaktischer NPN-Silizium-HF-Transistor im Gehäuse 18 A 4 DIN 41 876 TO-72 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert. Der Transistor ist für allgemeine Anwendungen bis in den GHz-Bereich geeignet z.B. für Antennen- und Hochfrequenz­


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    BFY90 Q62702-F297 Scans-0010548 BFy 90 transistor PDF

    SO-104

    Abstract: BLW11 blw 30 or bfw 30 BLW21 BLY 67 BLY-38 BLY34 bly 55 bly 63 BLY87
    Text: VHF-, UHF-ANWENDUNGEN VHF-, UHF APPLICATIONS 3 - 12 Typ type f MHz BFW 16 BFW 17 BFX 89 BFY 90 CATV CATV CATV CATV BLW11 BLW 12 BLW 13 BLW 14 CATV 470 470 470 13 13 13 0,1 0,75 2 0,66 3,75 7 BLW BLW BLW BLW 16 17 18 19 175 175 175 175 13 13 13 13 0,1 0,1 0,5


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    BLW11 O-131 O-129 O-117 SO-104 blw 30 or bfw 30 BLW21 BLY 67 BLY-38 BLY34 bly 55 bly 63 BLY87 PDF

    BFY56

    Abstract: BFY 39 transistor 300S6 BFY56A H21E
    Text: BFY 56 A NPN S IL IC O N T R A N S IS T O R , E P IT A X IA L P LA N A R TRANSISTOR NPN S ILIC IU M , PLA N A R E P IT A X IA L - General purpose Usage général Dissipation Case TO -39 ~ See outline drawing C8-7 on last pages Variation de dissipation B o îtie r


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    BFY56A BFY56 BFY 39 transistor 300S6 BFY56A H21E PDF

    transistor bf 184

    Abstract: pnp vhf transistor TO50 transistor transistor BF 509 BF 914 transistor BF 184 transistor transistor BF 451
    Text: m ils Uli S.A. TYPE NPN PNP BF BF BF BF BF BF BF BF BF BF BF BF BF BF BF BF BF 115 167 173 173S 180 181 184 185 198 199 200 214 215 240 241 254 255 BF BF BF BF BF 6 BF BF BF BF 272A 272B 316A 450 451 479 506 509 914 BFX 89 BFY 90 $ BFW 94 2N 918 2N 4957 2N 4958


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    5109B O-92a transistor bf 184 pnp vhf transistor TO50 transistor transistor BF 509 BF 914 transistor BF 184 transistor transistor BF 451 PDF

    BFY64

    Abstract: transistor BFY64 A 2039 g
    Text: BFY64 SILICON PLANAR PNP H IG H -C U R R E N T G E N E R A L P UR PO SE T R A N S IS T O R The BFY 64 is a silicon planar epitaxial PNP transistor in .Jedec T Q -3 9 metal case. I t is designed fo r digital and analog applications at current levels up to 500 m A , line driver,


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    BFY64 BFY64 transistor BFY64 A 2039 g PDF

    bs33

    Abstract: 35-130 BSS 130 BSS 97 BFR20 BFR21 BFX39 BFX95A BFX97A BFY56
    Text: PROFESSIONAL TRANSISTORS > _1 ro E UJ lL JZ. W U mA < £ _u > PACKAGE >» ~c > ia lc RANGE TYPE an d Q. uoJ UJ o (SU ) 'H i E > (SU) P O L A R IT Y General purpose switches BFR20 BFR21 NPN 35 _ 130 450 90/250 0.13 150 0.1-1000 T O -39 NPN 70 - 130 450 40/70


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    BS33A BFR20 BFR21 BFX39 100TO-39 BFX97A 15/2N 16/2N 17/2N 18/2N bs33 35-130 BSS 130 BSS 97 BFX95A BFY56 PDF