BFY83
Abstract: bfy82
Text: BFY 83 SILICON PLANAR NPN DUAL, H IG H -VO LTA G E AM PLIFIER The BFY 82 is a six term inal device containing tw o isolated silicon planar epitaxial NPN transistors in Jedec T O -7 7 metal case. The good thermal tracking over a wide current and temperature range, offers the circ u it designer matched transistors w ith specified performance
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BFY83
100MA
BFY83
bfy82
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Untitled
Abstract: No abstract text available
Text: Amphenol Aerospace MIL-DTL-83723, Series III, Pyle Hermetic Jam Nut D-Hole Mount Receptacle, Threaded Coupling II M83723/89Y / M83723/89P BTY/BFY/BNY-19 I Fully Mated Band† G Dia. SJT 38999 III PART # .781/ .761 Max. 19.83/19.32 Max. N Contact Stickout
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MIL-DTL-83723,
M83723/89Y
M83723/89P
BTY/BFY/BNY-19
EN2997Y7
ESC10YE3
ESC11YE3
brea35
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DN65
Abstract: dbt3 LB830S GB3836 DN40 DN50 BFY 83
Text: P 普通型 电动浮筒液位变送器 BFY 01 Z 智能型 概述： 概述 BFY－01 系列电动浮筒液位（界面）变送器是国家八﹒五重点科技攻关项目产品，该表是 连续测量液体液位的本质安全型防爆仪表，防爆标志为 iaⅡСΤ（2－5）
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BFY01
LB830S
LB805
24VDC
420mADC
4PN10
0PN16
420mA
JB/T822
GB3836--83
DN65
dbt3
LB830S
GB3836
DN40
DN50
BFY 83
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Untitled
Abstract: No abstract text available
Text: Amphenol Aerospace MIL-DTL-83723, Series III, Pyle BTY/BFY/BNY-17 N Contact Stickout ESC11YE2 26482 Solderwell Contacts J Coupling Thread Optional Eyelet Contacts 5015 † When fully mated with plug this band will be covered. Band is red on military types; can be red or blue on
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MIL-DTL-83723,
BTY/BFY/BNY-17
ESC11YE2
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EN2997Y1
Abstract: ESC10YE1
Text: MIL-DTL-83723, Series III, Pyle I ESC10YE1 SJT EN2997Y1 / YE1 N Contact Stickout N Contact Stickout .281 7.13 38999 BTY/BFY/BNY-14 .109/.079 2.76/2.00 .062/.047 1.57/1.19 A M83723/90Y / M83723/90P II .904 Max. 22.96 Max. PART # III Hermetic Solder Mount/Weld Mount Receptacle,
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MIL-DTL-83723,
ESC10YE1
EN2997Y1
BTY/BFY/BNY-14
M83723/90Y
M83723/90P
ESC11YE1
ESC10YE1
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BFY 94 transistor
Abstract: No abstract text available
Text: SIEM ENS NPN Silicon RF Transistor BFY 90 • For broadband amplifiers up to 1 GHz and non-saturated switches at collector currents from 1 mA to 20 mA. € CECC-type available: GEGC 50002/253. ESD: Electrostatic discharge sensitive device, observe handling precautions!
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Q62702-F297
235bQ5
0Db74Bl
BFY 94 transistor
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SO-104
Abstract: BLW11 blw 30 or bfw 30 BLW21 BLY 67 BLY-38 BLY34 bly 55 bly 63 BLY87
Text: VHF-, UHF-ANWENDUNGEN VHF-, UHF APPLICATIONS 3 - 12 Typ type f MHz BFW 16 BFW 17 BFX 89 BFY 90 CATV CATV CATV CATV BLW11 BLW 12 BLW 13 BLW 14 CATV 470 470 470 13 13 13 0,1 0,75 2 0,66 3,75 7 BLW BLW BLW BLW 16 17 18 19 175 175 175 175 13 13 13 13 0,1 0,1 0,5
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BLW11
O-131
O-129
O-117
SO-104
blw 30 or bfw 30
BLW21
BLY 67
BLY-38
BLY34
bly 55
bly 63
BLY87
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EN2997Y1
Abstract: M83723/84S2025N-CO
Text: II I Military: Commercial: Matrix Pyle 26482 Options Others Contacts High Speed Fiber Optics EMI Filter Transient Printed Circuit Board 26500 Pyle 5015 Crimp Rear Release Matrix 83723 III Matrix 2 Military: 144 MIL-DTL-83723, Series III, Pyle Hermetic Receptacles - Quick Reference
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MIL-DTL-83723,
M83723/88Y
M83723/88P
BTY-17
M83723/90P
BTY-14
BFY-14
BNY-14
EN2997Y1
M83723/84S2025N-CO
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BSY84
Abstract: C 337-40 33740 npn 1W 40V to39 CA500 c 33740 BSY86 BC337 BC341 850mW
Text: General Purpo/e Tran/i/ter/ r T Y P E NO. PD NPN >C BVc b O l v Ceo b v E bo @ T A = 2 5 °C v C E s a t @ I c / l B h p E @ V C E @ *C Cob m ax. m ax. m in ./max. f T @ •c C A SE m in. <§> <§> 1 20 V 120V 120V 120V 90V 80V 80V 80V 80V 60V 6V 6V 6V
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850mW
150mA
120MHz
BSY84
C 337-40
33740
npn 1W 40V to39
CA500
c 33740
BSY86
BC337
BC341
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10 gb laser diode
Abstract: NX8566LE NX8560MC Series bfy 421
Text: DATA SHEET LASER DIODE NX8564/8565/8566LE Series EA MODULATOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 2.5 Gb/s DWDM ULTRALONG-REACH 360 km, 600 km, 240 km APPLICATIONS DESCRIPTION The NX8564/8565/8566LE Series is an Electro-Absorption EA modulator
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NX8564/8565/8566LE
NX8564LE-BC/CC)
10 gb laser diode
NX8566LE
NX8560MC Series
bfy 421
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Untitled
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX8564/8565/8566LE Series EA MODULATOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 2.5 Gb/s DWDM ULTRALONG-REACH 360 km, 600 km, 240 km APPLICATIONS DESCRIPTION The NX8564/8565/8566LE Series is an Electro-Absorption EA modulator
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NX8564/8565/8566LE
NX8564LE-BC/iconductor
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362d
Abstract: 315D 346D 377D NX8570SA b 803 a NX8570SD 933D 618D
Text: DATA SHEET LASER DIODE NX8570 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength
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NX8570
362d
315D
346D
377D
NX8570SA
b 803 a
NX8570SD
933D
618D
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NX8570SD
Abstract: NX8570*55 transistor NEC D 822 P NX8570SA NX8570SC303-BA NX8570SC307-BA NX8570SC311-BA NX8570SC315-BA NX8570SC318-BA 5291 8-pin
Text: PRELIMINARY DATA SHEET LASER DIODE NX8570 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength monitor function.
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NX8570
NX8570S×
NX8570SD
NX8570*55
transistor NEC D 822 P
NX8570SA
NX8570SC303-BA
NX8570SC307-BA
NX8570SC311-BA
NX8570SC315-BA
NX8570SC318-BA
5291 8-pin
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ba date sheet
Abstract: NX8571SA NX8571SC303-BA NX8571SC307-BA NX8571SC311-BA NX8571SC315-BA NX8571SC318-BA 10 gb laser diode
Text: PRELIMINARY DATA SHEET LASER DIODE NX8571 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8571 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength monitor function.
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NX8571
NX8571S×
ba date sheet
NX8571SA
NX8571SC303-BA
NX8571SC307-BA
NX8571SC311-BA
NX8571SC315-BA
NX8571SC318-BA
10 gb laser diode
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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362d
Abstract: 315D 346D 377D NX8571SA
Text: DATA SHEET LASER DIODE NX8571 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8571 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength
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NX8571
362d
315D
346D
377D
NX8571SA
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NX8300BE-CC
Abstract: NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8562LB NX8562LF 10 gb laser diode NEC 6109 SERIES continuous wave light source for dwdm system
Text: DATA SHEET LASER DIODE NX8562 Series 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE CW LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8562 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with Polarization
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NX8562
NX8300BE-CC
NX8300CE-CC
NX8303BG-CC
NX8303CG-CC
NX8304BE-CC
NX8562LB
NX8562LF
10 gb laser diode
NEC 6109 SERIES
continuous wave light source for dwdm system
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Transistoren DDR
Abstract: vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 vergleichsliste DDR "vergleichsliste" bauelemente DDR sf 369
Text: VT FUNKAMATEUR-Bauelementeinformation Vergleichsliste für Transistoren DDR/international DDR-Typ Vergleichstyp Beschreibung Hinweise SC 237/238/239 SC 307/308/309 SCE 237 SD 335/337/339 BC 237/238/239 BC 307/308/309 BC 847 BCW 71/72 BCX 70 BC 848 BCW 31/32/33/60
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SCE237
SCE238
SCE239
SCE308
Transistoren DDR
vergleichsliste
TELEFUNKEN bux 127
aktive elektronische bauelemente ddr
BUX 127
SF 127
vergleichsliste DDR
"vergleichsliste"
bauelemente DDR
sf 369
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HBF4727A
Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
Text: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product
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KT 819 transistor
Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e
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continuous wave light source for dwdm system
Abstract: NX8300BE-CC NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8563 NX8563LB NX8563LF 10 gb laser diode
Text: DATA SHEET LASER DIODE NX8563 Series 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE CW LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8563 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with Polarization Maintain
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NX8563
continuous wave light source for dwdm system
NX8300BE-CC
NX8300CE-CC
NX8303BG-CC
NX8303CG-CC
NX8304BE-CC
NX8563LB
NX8563LF
10 gb laser diode
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Untitled
Abstract: No abstract text available
Text: Amphenol Aerospace 2. II MIL-DTL-83723, Series III Connector Type Connector Style and Contact Type Crimp MILITARY HERMETIC M83723 /88 III 1. I How to Order – Hermetic, Military or Pyle Commercial Matrix Pyle Matrix 2 26482 83723 III 5015 Crimp Rear Release Matrix
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MIL-DTL-83723,
M83723
MIL-DTL-83723
M50TF3564,
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BFY90
Abstract: bfy90 motorola BFY 83 2N6305 BFY 88 bfx89
Text: MOTOROLA SEMICONDUCTOR BFX89 BFY90 TECHNICAL DATA The RF Line f r ' 2 . 0 G H z ffi 1 0 m A H IG H F R E Q U E N C Y T R A N S IS T O R S N P N S IL IC O N H IG H -F R E Q U E N C Y T R A N S IS T O R S N P N S IL IC O N d e s ig n e d fo r VH F and UHF a p p lic a tio n s w h e re h ig h -g a in , lo w n o is e a n d g o o d in t e r m o d u l a t i o n c h a r a c t e r is t ic s a re r e q u ir e d .
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BFX89
BFY90
BFY90
bfy90 motorola
BFY 83
2N6305
BFY 88
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TO-206A
Abstract: BFY 83 BFY90T BFY 99 BFY90 MOTOROLA
Text: • MOTOROLA SC CXSTRS/R F MbE D b3fci72S4 G O T m a a MOTOROLA 4 ■MOTb T ■ SEMICONDUCTOR BFX89 BFY90 TECHNICAL DATA T h e R F L ine fT = 2 .0 G H z @ 1 0 m A HIG H FREQUENCY T R A N SISTO R S NPN SILICON HIGH-FREQUENCY TRANSISTORS N P N S IL IC O N . . . d e s ig n e d for V H F a n d U H F a p p lic a t io n s w h e r e h ig h -g a in , lo w *
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b3fci72S4
BFX89
BFY90
TO-206A
BFY 83
BFY90T
BFY 99
BFY90 MOTOROLA
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